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10 Mar 1997

Volume 70, Issue 10, pp. 1189-1325

Page 2 of 2 Pages Previous Page | Jump to Page

Thermal stability of Si3N4/Si/GaAs interfaces

D.-G. Park, Z. Chen, D. M. Diatezua, Z. Wang, A. Rockett, H. Morkoç, and S. A. Alterovitz

Appl. Phys. Lett. 70, 1263 (1997); http://dx.doi.org/10.1063/1.118547 (3 pages) | Cited 13 times

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An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal– insulator–semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance–voltage and conductance loss measurements was about 8×1010 eV−1 cm−2 near GaAs midgap after rapid thermal annealing at 550 °C in N2. However, this density increased to 5×1011 eV−1 cm−2 after annealing at 750 °C in N2. The underlying mechanisms responsible for this degradation are described. © 1997 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.60.Dv Thermal stability; thermal effects
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Jv Interfaces; heterostructures; nanostructures
84.32.Tt Capacitors

Co silicide formation on SiGeC/Si and SiGe/Si layers

R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, and J. C. Sturm

Appl. Phys. Lett. 70, 1266 (1997); http://dx.doi.org/10.1063/1.118548 (3 pages) | Cited 35 times

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The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate interface during the reaction, which blocks the Co diffusion paths. The CoSi2 layers thus formed exhibit a preferential (h00) orientation. The slow supply of Co atoms to the silicide/Si interface, due to the blocking of Co diffusion paths by Ge and C, is believed to be the reason for this epitaxial alignment. © 1997 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Ns Metal-nonmetal contacts

Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

Shu Yuan, Yong Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen

Appl. Phys. Lett. 70, 1269 (1997); http://dx.doi.org/10.1063/1.118549 (3 pages) | Cited 24 times

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A novel impurity-free interdiffusion technique utilizing pulsed anodization and subsequent rapid thermal annealing at temperatures near 900 °C was reported. Enhanced interdiffusion was observed in the presence of an anodized GaAs capping layer in GaAs/AlGaAs quantum well structures. Transmission electron microscopy studies show evidence of interdiffusion. Photoluminescence spectra from interdiffused samples show large blue shift and no significant linewidth broadening. Possible mechanism of interdiffusion was discussed. © 1997 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.65.-b Surface treatments
61.72.Cc Kinetics of defect formation and annealing
82.45.-h Electrochemistry and electrophoresis
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Paramagnetic susceptibility of semiconducting CdF2:In crystals: Direct evidence of the negative-U nature of the DX-like center

S. A. Kazanskii, A. I. Ryskin, and V. V. Romanov

Appl. Phys. Lett. 70, 1272 (1997); http://dx.doi.org/10.1063/1.118550 (3 pages) | Cited 26 times

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Paramagnetic susceptibility κpara of CdF2 crystals with bistable In centers is measured in the temperature range T=4–300 K. For crystals cooled in the dark down to liquid helium temperature, κpara is determined by the trace Mn2+ impurity. Illumination of the sample by the ultraviolet-visible light results in the appearance of the photoinduced δκpara signal due to formation of centers with the magnetic moment J = 1/2. This gives a clear evidence of an absence of paramagnetism in the deep state of the bistable In center and its presence in the shallow state, i.e., proves the negative-U nature of the deep state. © 1997 American Institute of Physics.
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71.55.Ht Other nonmetals
72.80.Jc Other crystalline inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
75.20.Ck Nonmetals

Thermally stable PtSi Schottky contact on n-GaN

Q. Z. Liu, L. S. Yu, S. S. Lau, J. M. Redwing, N. R. Perkins, and T. F. Kuech

Appl. Phys. Lett. 70, 1275 (1997); http://dx.doi.org/10.1063/1.118551 (3 pages) | Cited 48 times

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Platinum silicide (PtSi) and Pt Schottky contacts on n-GaN have been investigated and compared. The PtSi contacts were formed on n-GaN by annealing a multilayer structure of Pt/Si with the appropriate thickness ratio at 400 °C for 1 h in forming gas. The barrier height of the as-formed PtSi contacts was found to be 0.87 eV capacitance–voltage (C–V), and remained unchanged after further annealing at 400 and 500 °C. Upon annealing at 600 °C for 1 h, the barrier height decreased to 0.74 eV (C–V), but the diodes remained well-behaved. The as-deposited Pt yielded a barrier height of 1.0 eV (C–V). Upon annealing at 400 °C for 1 h, the Pt diodes degraded and most of the diodes did not survive additional annealing at 400 °C for longer times. The electrical measurements and the Rutherford backscattering spectrometry results indicated that PtSi contacts are thermally much more stable than Pt contacts on GaN. © 1997 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties

T. J. Thornton, J. M. Fernández, S. Kaya, P. W. Green, and K. Fobelets

Appl. Phys. Lett. 70, 1278 (1997); http://dx.doi.org/10.1063/1.118526 (3 pages) | Cited 7 times

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We have grown strained Si quantum wells on relaxed Si0.7Ge0.3 buffer layers using vicinal (118) silicon substrates. Compared to conventional (001) substrates the surface is tilted by 10° towards the [110] direction resulting in terraces with step edges which run parallel to [110]. The surface morphology of the layers shows “cross-hatching” characteristic of relaxed SiGe films grown on Si substrates. However, the cross-hatching is not orthogonal but aligns along directions in which (111) planes intersect the (118) surface. We have measured the low temperature transport properties of the two-dimensional electron gas confined within the strained Si channel. When measured with current flowing parallel to the step edges the electron mobility is approximately four times larger than that measured in a perpendicular direction showing the strong elastic scattering associated with the step edges. In contrast the single particle relaxation time is almost identical for the two different orientations. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Cw Elemental semiconductors
73.61.Le Other inorganic semiconductors

Optimization of p-contacts on ZnSe diodes

J. Nürnberger, W. Faschinger, R. Schmitt, M. Korn, M. Ehinger, and G. Landwehr

Appl. Phys. Lett. 70, 1281 (1997); http://dx.doi.org/10.1063/1.119075 (3 pages) | Cited 2 times

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We show that a drastic improvement of the current voltage characteristics of a ZnSe diode can be achieved by lowering the growth temperature of a ZnSe/ZnTe multi-quantum well p contact. A similar trend is observed when the thickness of the ZnTe cap layer on top of the multi-quantum well is reduced. Both observations show that the suppression of interdiffusion plays a dominant role in the formation of Ohmic contacts to p-ZnSe. A comparison between a conventional diode and a diode where the p-ZnSe has been replaced by p-ZnSTe shows that the interdiffusion process affects the ZnSe underneath the contact, and not the multi-quantum well contact itself. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.Ny Chemical interdiffusion; diffusion barriers
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
68.35.Fx Diffusion; interface formation

Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation

Gu-Bo Li, Liang-Sheng Liao, Xiao-Bing Liu, Xiao-Yuan Hou, and Xun Wang

Appl. Phys. Lett. 70, 1284 (1997); http://dx.doi.org/10.1063/1.118552 (3 pages) | Cited 9 times

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Porous silicon treated by amine immersion and then rapid thermal oxidation results in a photoluminescence peak shift from ∼650 nm (red light) to a stable and intense ∼520 nm blue-green light. The amine immersion may catalyze a process during rapid thermal oxidation that both reduces the sizes of Si cores and more effectively saturates the dangling bonds on the inner surfaces of the porous silicon. © 1997 American Institute of Physics.
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78.55.Ap Elemental semiconductors
81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Unusual strain relaxation in SiGe/Si heterostructures

M. Lyakas, D. Parnis, W. D. Kaplan, E. Zolotoyabko, M. Eizenberg, V. Demuth, and H. P. Strunk

Appl. Phys. Lett. 70, 1287 (1997); http://dx.doi.org/10.1063/1.118553 (3 pages) | Cited 2 times

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Si1−xGex films (x = 0.22) epitaxially grown by ion beam-sputter deposition on (001) Si substrates were subjected to rapid and conventional thermal annealings at different temperatures. Strain measurements carried out by means of high-resolution x-ray diffraction exhibited strongly nonmonotonous strain dependencies on the annealing time. We observed short-time and long-time relaxation modes with activation energies of 4.6 and 1.3 eV, respectively, and unexpectedly, an additional mode of strain recovery at intermediate time durations with an activation energy of 1.6 eV. This behavior was attributed to processes that involve {113} two-dimensional defects, i.e., agglomerates of interstitials, which were identified by means of transmission electron microscopy. © 1997 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.05.Hd Other semiconductors
81.15.Cd Deposition by sputtering
68.35.Gy Mechanical properties; surface strains
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Transmission electron microscopy observation of lateral order/disorder structures in (Al)GaInP

M. Burkard, C. Geng, A. Mühe, F. Scholz, H. Schweizer, and F. Phillipp

Appl. Phys. Lett. 70, 1290 (1997); http://dx.doi.org/10.1063/1.118554 (3 pages) | Cited 2 times

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Ion implantation damaging of ordered (Al)GaInP reduces the temperature threshold for thermal disordering from about 850 °C to temperatures below 800 °C, therefore, annealing at 800 °C leads to selective disordering of implanted regions. Dark-field transmission electron microscopy has been used to study the spatial resolution of implantation-induced disordering of CuPtB-ordered GaInP/AlGaInP heterostructures. Lateral order/disorder structures smaller than 200 nm have been realized using implantation masks defined by electron beam lithography. The lateral extension of disordering observed by transmission electron microscopy is in agreement with photoluminescence data and calculations of the lateral implantation straggling. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
85.40.Hp Lithography, masks and pattern transfer

Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface

Song S. Shi, Evelyn L. Hu, Jing-Ping Zhang, Ying-lan Chang, Primit Parikh, and Umesh Mishra

Appl. Phys. Lett. 70, 1293 (1997); http://dx.doi.org/10.1063/1.118555 (3 pages) | Cited 10 times

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We present a study of oxide–semiconductor interfaces formed by wet thermal oxidation of a thin epitaxial AlAs layer. Photoluminescence (PL) from a quantum well in close proximity to the interface is monitored before and after oxidation. The normalized PL intensity was found to decrease roughly in proportion to the degree of completeness of the oxidation. The diminishing luminescence is attributed to the presence of trap states formed at the oxide–semiconductor interface formed during the oxidation process; hydrogen ion treatment is effective in the partial restoration of the luminescence. In addition to the traps, the oxidation process also “disorders” the material within ∼15 nm from the semiconductor–oxide interface, as revealed by transmission electron micrographs. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.65.Mq Oxidation
81.05.Ea III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ey III-V semiconductors

Transmission electron holography of silicon nanospheres with surface oxide layers

Y. C. Wang, T. M. Chou, M. Libera, and T. F. Kelly

Appl. Phys. Lett. 70, 1296 (1997); http://dx.doi.org/10.1063/1.118556 (3 pages) | Cited 18 times

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Phase images of 20–30-nm-diam silicon spheres were collected by holographic methods in a field-emission transmission electron microscope. The spherical geometry enables the effect of specimen thickness on the electron-wave phase to be separated from the intrinsic Si electron-optical refractive effects allowing a determination of the mean inner potential Φ0. This work finds Φ0 = 11.9±0.9 V characterizing amorphous Si and 12.1±1.3 V characterizing crystalline Si. The phase images can resolve a 2-nm-thick native oxide layer and give Φ0 for SiO2=10.1±0.6 V. The phase data can quickly recognize a surface layer, and the effect of a surface layer on the determination of the bulk mean potential can be minimized. © 1997 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
42.40.My Applications
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals

A. Klein, T. Löher, Y. Tomm, C. Pettenkofer, and W. Jaegermann

Appl. Phys. Lett. 70, 1299 (1997); http://dx.doi.org/10.1063/1.118517 (3 pages) | Cited 18 times

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The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV = 0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. © 1997 American Institute of Physics.  
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73.20.At Surface states, band structure, electron density of states
72.80.Ey III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors
81.05.Hd Other semiconductors
72.80.Jc Other crystalline inorganic semiconductors
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gates

Jan-Olof J. Wesström, Katharina Hieke, Björn Stålnacke, Thomas Palm, and Björn Stoltz

Appl. Phys. Lett. 70, 1302 (1997); http://dx.doi.org/10.1063/1.118518 (3 pages) | Cited 9 times

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Clear conductance quantization at T = 4.2 K has been demonstrated in a 140 nm wide and 200 nm long trench-isolated In0.53Ga0.47As/InP electron waveguide with in-plane gates, using the surrounding two-dimensional electron gas as the gate. It was fabricated using metalorganic vapor phase epitaxy, electron beam lithography, and CH4/H2 reactive ion etching. In a T = 20 K measurement on a 60 nm wide and 100 nm long device, only the first conductance plateau of 2e2/h was reached. © 1997 American Institute of Physics.
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85.35.Ds Quantum interference devices
73.23.-b Electronic transport in mesoscopic systems
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer

Surface topology of GaAs(100) after focused ion beam implantation of Si++

P. Schmuki, L. E. Erickson, G. Champion, B. F. Mason, J. Fraser, and C. Moessner

Appl. Phys. Lett. 70, 1305 (1997); http://dx.doi.org/10.1063/1.118519 (3 pages) | Cited 9 times

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GaAs(100) was implanted with Si++ doses ranging from 3×1013 to 3×1016 cm−2 using a focused ion beam. The surface topology and roughness of implanted lines and squares was studied by atomic force microscopy. Above a threshold dose, protrusions of the ion beam treated areas in the range of 1–15 nm in heights and an increase in surface roughness were found. The height of the protrusions and surface roughness increase with increasing implantation dose up to a saturation level. Both the onset of substrate bulging and saturation of the effect are both dependent on the linewidth of the implant. Different causes for the protrusions are discussed. From Monte Carlo simulations, it is deduced that the volume expansion is most likely due to the creation of vacancies during implantation. © 1997 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.uj III-V and II-VI semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.72.J- Point defects and defect clusters
02.70.Rr General statistical methods

Domain boundaries in epitaxial wurtzite GaN

Y. Xin, P. D. Brown, C. J. Humphreys, T. S. Cheng, and C. T. Foxon

Appl. Phys. Lett. 70, 1308 (1997); http://dx.doi.org/10.1063/1.118520 (3 pages) | Cited 37 times

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Double positioning boundaries on {1210} and {1100} planes in wurtzite GaN epilayer grown by molecular beam epitaxy on {111}B GaP are described. Transmission electron microscopy observations demonstrate that the {1210} boundary extending a short distance along the c axis is characterized by a displacement of 1/2〈1011〉 and is associated with single growth faults in the basal plane. This boundary forms as a consequence of island coalescence. Conversely, the {1100} boundary originates at the epilayer/substrate interface and runs through the whole epilayer, while g.R analysis combined with high resolution electron microscopy suggests a displacement of 1/3n〈1120〉 (n>3) in the basal plane with an additional shift along 〈0001〉 of 1/n〈0001〉(n>3). © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

The near band edge photoluminescence of cubic GaN epilayers

D. J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, and K. Lischka

Appl. Phys. Lett. 70, 1311 (1997); http://dx.doi.org/10.1063/1.118521 (3 pages) | Cited 67 times

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The near band edge photoluminescence (PL) of cubic GaN epilayers grown by radio frequency (rf) plasma-assisted molecular beam epitaxy on (100) GaAs is measured. Since the PL is excited with an unfocused laser beam it resembles the layer properties rather than the properties of micron-size inclusions or micro crystals. The low temperature PL spectra show well separated lines at 3.26 and 3.15 eV which are due to excitonic and donor-acceptor pair transitions (donor binding energy 25 meV, acceptor binding energy 130 meV). No emission above the band gap of the cubic phase is detected. PL results are confirmed by x-ray diffraction and atomic force microscopy which reveal only negligible contributions from hexagonal inclusions and micron size single crystals. The room temperature PL consists of an emission band at about 3.21 eV with a full width at half maximum of 117 meV. © 1997 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.Qq Microscopic defects (voids, inclusions, etc.)
71.35.-y Excitons and related phenomena
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy

N. V. Sochinskii, V. Muñoz, V. Bellani, L. Viña, E. Diéguez, E. Alves, M. F. da Silva, J. C. Soares, and S. Bernardi

Appl. Phys. Lett. 70, 1314 (1997); http://dx.doi.org/10.1063/1.118522 (3 pages) | Cited 15 times

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CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C and time in the range of 2–4 h using dimethyl-cadmium and diisopropil-tellurium as precursors. The layers were studied by scanning electron microscopy, Rutherford backscattering spectroscopy, and high resolution low-temperature photoluminescence spectroscopy. The surface morphology and RBS and PL spectra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. © 1997 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
78.55.Et II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Hf II-VI semiconductors

Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices

Lisa Sugiura

Appl. Phys. Lett. 70, 1317 (1997); http://dx.doi.org/10.1063/1.118523 (3 pages) | Cited 16 times

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Dislocation glide velocities in GaAlAs/GaAs, InGaAsP/InP, and GaN-based light-emitting devices are estimated. These results are consistent with device degradation rates related to dislocation motion. It is clarified that the long lifetime of GaN-based devices with high dislocation density is principally due to extremely small dislocation mobility, partly due to small shear stress for dislocation motion, and due little to the radiation enhancement effect. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
66.30.Lw Diffusion of other defects

Annular Josephson junctions as superconductive nuclear particle detectors

C. Nappi and R. Cristiano

Appl. Phys. Lett. 70, 1320 (1997); http://dx.doi.org/10.1063/1.119322 (3 pages) | Cited 11 times

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A new geometrical configuration for superconductive tunnel junctions as high energy resolution particle detectors is presented. The proposed configuration is based on annular junctions, in which fluxons are trapped in the central hole during the superconducting transition. Such a configuration overcomes some important drawbacks of the traditional geometries. The suppression of the Josephson critical current by a magnetic field that does not need to be sustained during the whole detection time and the absence of Fiske steps, which compromise the stability of the bias point, are automatically reached with the new configuration. © 1997 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
29.40.Wk Solid-state detectors
74.25.Sv Critical currents
74.10.+v Occurrence, potential candidates
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Observation of magnetic domains using a reflection-mode scanning near-field optical microscope

C. Durkan, I. V. Shvets, and J. C. Lodder

Appl. Phys. Lett. 70, 1323 (1997); http://dx.doi.org/10.1063/1.118524 (3 pages) | Cited 25 times

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It is demonstrated that it is possible to image magnetic domains with a resolution of better than 60 nm with the Kerr effect in a reflection-mode scanning near-field optical microscope. Images taken of tracks of thermomagnetically prewritten bits in a Co/Pt multilayer structure magnetized out-of plane showed optical features in a track pattern whose appearance was determined by the position of an analyzer in front of the photomultiplier tube. These features were not apparent in the topography, showing this to be a purely magneto-optic effect. © 1997 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.20.Ls Magneto-optical effects
75.50.Ss Magnetic recording materials
07.79.Fc Near-field scanning optical microscopes
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