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31 Mar 1997

Volume 70, Issue 13, pp. 1639-1771

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A novel approach to electrochromism in WO3 thin film using piezoelectric ceramics for power supply

C. N. Xu, M. Akiyama, P. Sun, and T. Watanabe

Appl. Phys. Lett. 70, 1639 (1997); http://dx.doi.org/10.1063/1.118654 (2 pages) | Cited 15 times

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Electrochromism was newly realized in a WO3–Pb(Zr0.52Ti0.48)O3 (PZT) system which utilized the piezoelectric property of PZT ceramics for power supply. The electric power produced by Mn-doped PZT ceramics enabled the WO3 film to color blue. High piezoelectricity with a peak voltage of 35 V and peak current of 1.2 mA on a 30 kΩ circuit was observed at a pressure of 30 MPa for the present system. This study shows the possibility to actuate the electrochromic WO3 film with PZT ceramics. © 1997 American Institute of Physics.
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78.66.Nk Insulators
78.20.Jq Electro-optical effects
77.65.Ly Strain-induced piezoelectric fields
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
62.50.-p High-pressure effects in solids and liquids

Fast mutually pumped phase conjugation using transient photorefractive coupling

Erik Raita, Alexei A. Kamshilin, Victor V. Prokofiev, and Timo Jaaskelainen

Appl. Phys. Lett. 70, 1641 (1997); http://dx.doi.org/10.1063/1.118656 (3 pages) | Cited 10 times

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Unusually fast mutually pumped phase-conjugation (MPPC) is achieved in a Bi12TiO20 crystal by using transient photorefractive beam coupling under a dc electric field. Pulses of phase-conjugate waves with a buildup time of 4.5 ms and a width of 50 ms at an input intensity of 2×0.8 W/cm2 are obtained after applying a rising front of external electric field to the crystal. A phase-conjugation efficiency as high as 25% of the incident light power is measured. © 1997 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
78.20.Jq Electro-optical effects

Exciplex emission in bilayer polymer light-emitting devices

D. D. Gebler, Y. Z. Wang, J. W. Blatchford, S. W. Jessen, D.-K. Fu, T. M. Swager, A. G. MacDiarmid, and A. J. Epstein

Appl. Phys. Lett. 70, 1644 (1997); http://dx.doi.org/10.1063/1.118657 (3 pages) | Cited 73 times

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Photoluminescent and electroluminescent studies of bilayer heterojunctions formed from a poly(pyridyl vinylene phenylene vinylene) (PPyVPV) derivative and poly(vinyl carbazole) (PVK) show an emission peak which cannot be ascribed to either the PPyVPV derivative or PVK layer. Through studies of absorption and photoluminescence excitation (PLE) spectra we demonstrate that the additional feature results from an exciplex at the bilayer interface. The photoluminescence efficiency of the exciplex is greater than 20%. The electroluminescence spectrum from the bilayer devices is entirely due to exciplex emission, with internal efficiencies initially achieved exceeding 0.1%. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds

Violet/blue emission from epitaxial cerium oxide films on silicon substrates

A. H. Morshed, M. E. Moussa, S. M. Bedair, R. Leonard, S. X. Liu, and N. El-Masry

Appl. Phys. Lett. 70, 1647 (1997); http://dx.doi.org/10.1063/1.118658 (3 pages) | Cited 60 times

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Violet/blue photoluminescence was observed from epitaxial cerium oxide films on silicon substrates. The films were deposited on silicon (111) substrates under ultrahigh vacuum conditions using pulsed laser ablation of a cerium oxide target and treated by rapid thermal annealing in argon. High resolution transmission electron microscopy and x-ray diffraction measurements indicated the formation of a single crystal cerium oxide phase Ce6O11 different from CeO2 in the annealed films. The emission might be due to charge transfer transitions from the 4f band to the valence band of the oxide. © 1997 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
81.15.Fg Pulsed laser ablation deposition
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.70.-d Level splitting and interactions

Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure

Daniel Hofstetter, David P. Bour, Robert L. Thornton, and N. M. Johnson

Appl. Phys. Lett. 70, 1650 (1997); http://dx.doi.org/10.1063/1.118659 (3 pages) | Cited 32 times

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We report a comparison between measured and calculated far field data for an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure with AlGaN cladding layers. Optical pumping of the semiconductor device was performed with a pulsed 337 nm N2 laser, whose beam was focused to a narrow stripe. A thin upper cladding layer allowed efficient pumping of the In0.15Ga0.85N/In0.05Ga0.95N laser structure. Despite high distributed cavity losses of at least 30 cm−1, and although gain occurred in the small active region only, the seventh order transverse mode was supported in a waveguide formed by the entire 5-μm-thick epitaxial layer structure. Excellent agreement is demonstrated between measured and calculated far field patterns of the lasing mode. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

X-ray generation enhancement from a laser-produced plasma with a porous silicon target

Tadashi Nishikawa, Hidetoshi Nakano, Hyeyoung Ahn, Naoshi Uesugi, and Tadashi Serikawa

Appl. Phys. Lett. 70, 1653 (1997); http://dx.doi.org/10.1063/1.118660 (3 pages) | Cited 22 times

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X-ray generation enhancement from a laser-produced plasma with a porous Si target is reported. For a porous surface formed on a Si wafer, the self-reflectivity of a femtosecond pulse becomes considerably small. The observed energy penetration depth is 25–30 μm, which is much larger than the skin depth of solid density matter. Using a porous Si target, the threshold of the pre-pulse intensity required for soft x-ray emission enhancement can be reduced. It also contributes to enhance the pre-pulse effect, and soft x-ray generation enhancement ranging from 1.6 to 6.5 times is observed depending on the pre-pulse intensity. © 1997 American Institute of Physics.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
78.70.En X-ray emission spectra and fluorescence
79.20.Ds Laser-beam impact phenomena

Optical imaging of carrier dynamics in silicon with subwavelength resolution

A. H. La Rosa, B. I. Yakobson, and H. D. Hallen

Appl. Phys. Lett. 70, 1656 (1997); http://dx.doi.org/10.1063/1.118661 (3 pages) | Cited 5 times

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Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active. © 1997 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.79.Fc Near-field scanning optical microscopes
61.72.Dd Experimental determination of defects by diffraction and scattering
72.40.+w Photoconduction and photovoltaic effects

Stimulated far-infrared emission from copper-doped germanium crystals

G. Sirmain, L. A. Reichertz, O. D. Dubon, E. E. Haller, W. L. Hansen, E. Bründermann, A. M. Linhart, and H. P. Röser

Appl. Phys. Lett. 70, 1659 (1997); http://dx.doi.org/10.1063/1.118662 (3 pages) | Cited 9 times

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We have detected stimulated far-infrared emission from copper-doped germanium single crystals. By varying the magnetic field between 1 and 2.3 T, we have achieved emission in the range of 70–120 cm−1. Laser action was observed for crystals with a copper acceptor concentration as high as 1.5×1015 cm−3, a doping level that is considerably higher than that of any single or double acceptor doped Ge laser. Stimulated emission from Ge crystals with such a high Cu concentration is possible because only a small fraction of the copper acceptors is ionized during operation. © 1997 American Institute of Physics.
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78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes
71.55.Cn Elemental semiconductors

Reduction of InGaAs/GaAs laser facet temperatures by band gap shifted extended cavities

P. G. Piva, S. Fafard, M. Dion, M. Buchanan, S. Charbonneau, R. D. Goldberg, and I. V. Mitchell

Appl. Phys. Lett. 70, 1662 (1997); http://dx.doi.org/10.1063/1.118663 (3 pages) | Cited 11 times

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Reflectance modulation measurements have been used to determine facet temperatures of InGaAs/GaAs double quantum well (QW) graded-index separate-confinement heterostructure ridge-waveguide lasers possessing band gap tuned passive cavity sections. We find that the incorporation of transparent extended cavities, produced by ion-implantation enhanced QW intermixing, significantly decreases the laser facet temperatures. The reduced photoabsorption occurring at the facets, achieved by the QW intermixing process, should lead to increases in both the maximum optical power levels and device longevity prior to the onset of catastrophic failure. © 1997 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
61.72.uj III-V and II-VI semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Doped organic electroluminescent devices with improved stability

Jianmin Shi and C. W. Tang

Appl. Phys. Lett. 70, 1665 (1997); http://dx.doi.org/10.1063/1.118664 (3 pages) | Cited 247 times

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Remarkable improvement in stability has been demonstrated in an organic electroluminescent (EL) device using a doped emitter consisting of 8-hydroxyquinoline aluminum (Alq) as the host and N,N-dimethylquinacridone (DMQA) as the emissive dopant. A luminance half-life on the order of about 7500 h has been achieved in the DMQA/Alq EL device, operating under a constant current of 20 mA/cm2 and starting at a high luminance of 1400 cd/m2. The improved stability was attributed to the elimination of intermolecular hydrogen bonding between the dopant molecules. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices

Infrared ellipsometry on hexagonal and cubic boron nitride thin films

E. Franke, H. Neumann, M. Schubert, T. E. Tiwald, J. A. Woollam, and J. Hahn

Appl. Phys. Lett. 70, 1668 (1997); http://dx.doi.org/10.1063/1.118655 (3 pages) | Cited 7 times

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Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm−1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Fs III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Subwavelength Raman spectroscopy

J. Grausem, B. Humbert, A. Burneau, and J. Oswalt

Appl. Phys. Lett. 70, 1671 (1997); http://dx.doi.org/10.1063/1.118665 (3 pages) | Cited 9 times

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Near-field Raman spectroscopy has been performed on liquid CCl4. The spectrum, obtained through an aperture significantly smaller (λ/10) than the exciting wavelength (514.5 nm) with a good signal-to-noise ratio, presents polarization effects that are different from the far-field spectrum. The tip is shown to be polarized at 99.9% by the Raman near field. If the probe is modeled as a single dielectric sphere, the estimated Raman near-field amplitude amounts to about 103 V m−1. The frustration of the Raman near field by the probe allows to record the Raman spectrum of only 0.4 attomol, or 240 000 mol. © 1997 American Institute of Physics.
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78.30.C- Liquids

Outdoor evaluation of the thermoluminescent properties of α-Al2O3 crystals

J. A. Muñoz, F. Cussó, I. Aguirre de Cárcer, F. Jaque, J. L. Muñiz, A. Delgado, B. Castañeda, M. Barboza-Flores, R. Pérez-Salas, R. Aceves, and L. P. Pashchenko

Appl. Phys. Lett. 70, 1674 (1997); http://dx.doi.org/10.1063/1.118200 (2 pages) | Cited 1 time

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In this work, the thermoluminescence response of α-Al2O3 under solar irradiation has been studied. This material exhibits selective excitation with a narrow response, with a maximum at 313 nm, in the ultraviolet-B range. © 1997 American Institute of Physics.
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78.60.Kn Thermoluminescence
85.60.Gz Photodetectors (including infrared and CCD detectors)

Features of shock wave formation in a wire induced surface flashover

Igor V. Lisitsyn, Taishi Muraki, and Hidenori Akiyama

Appl. Phys. Lett. 70, 1676 (1997); http://dx.doi.org/10.1063/1.118666 (3 pages) | Cited 6 times

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Explosive wire induced surface flashover has been studied as a promising method for destruction of solid materials. This method exhibits very high efficiency of electric energy transformation into the discharge and effective shock wave generation. The framing photography method is applied in order to clarify the discharge dynamics and the mechanism of the shock wave formation and propagation. The experiments performed allow to suggest the model of the pressure wave generation in the wire explosion process. © 1997 American Institute of Physics.    
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52.80.Qj Explosions; exploding wires
62.50.-p High-pressure effects in solids and liquids
83.60.Uv Wave propagation, fracture, and crack healing
52.75.-d Plasma devices

Cyclic crystalline–amorphous transformations of mechanically alloyed Co75Ti25

M. Sherif El-Eskandarany, K. Akoi, K. Sumiyama, and K. Suzuki

Appl. Phys. Lett. 70, 1679 (1997); http://dx.doi.org/10.1063/1.118667 (3 pages) | Cited 42 times

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We have found that a cyclic crystalline–amorphous phase transformation can occur in Co75Ti25 alloy powder when subjected to ball milling. The results have shown that a single amorphous phase of Co75Ti25 is obtained after 11 ks of mechanical alloying (MA) time. This amorphous phase transforms into a new metastable phase of bcc-Co3Ti upon milling for 86 ks. The bcc-Co3Ti is thermally stable and does not transform to any other phase(s) upon heating up to 1300 K. It however returns to the same amorphous phase of Co75Ti25 upon milling for 360 ks. Further milling leads to the formation of crystalline and/or amorphous phases depending on the MA time. © 1997 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.K- Solid-solid transitions
64.60.My Metastable phases

Growth of diamond films on boron nitride thin films by bias-assisted hot filament chemical vapor deposition

M. C. Polo, G. Sańchez, W. L. Wang, J. Esteve, and J. L. Andújar

Appl. Phys. Lett. 70, 1682 (1997); http://dx.doi.org/10.1063/1.118668 (3 pages) | Cited 6 times

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We report the growth of continuous diamond thin films by bias-assisted hot filament chemical vapor deposition onto hexagonal boron nitride films prepared by plasma chemical vapor deposition on silicon substrates. Negative substrate biasing during the early stages of diamond growth greatly increased the nucleation density. Values of 1010 cm−2 were achieved at −250 V for bias times as short as 25 min. After the nucleation stage, high quality polycrystalline continuous diamond films, as revealed by scanning electron microscopy and Raman analysis, were grown under standard hot filament deposition conditions. © 1997 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Db Elemental semiconductors and insulators
68.55.-a Thin film structure and morphology
78.30.Am Elemental semiconductors and insulators

Lattice engineered compliant substrate for defect-free heteroepitaxial growth

F. E. Ejeckam, Y. H. Lo, S. Subramanian, H. Q. Hou, and B. E. Hammons

Appl. Phys. Lett. 70, 1685 (1997); http://dx.doi.org/10.1063/1.118669 (3 pages) | Cited 73 times

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Presented here is proof-of-principle that a thin single crystal semiconductor film—when twist-wafer bonded to a bulk single crystal substrate (of the same material)—will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Å film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their 〈110〉 directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(∼1% strain) were grown with thicknesses of 3000 Å, thirty times the Matthews–Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. © 1997 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Copper, hydrogen, and titanium incorporation in potassium lithium tantalate niobate single crystals

Xiaolin Tong, Min Zhang, Amnon Yariv, and Aharon J. Agranat

Appl. Phys. Lett. 70, 1688 (1997); http://dx.doi.org/10.1063/1.118670 (3 pages) | Cited 1 time

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In this study we propose a model that describes the diffusion of copper, hydrogen, and titanium through the liquid/solid interface in potassium lithium tantalate niobate crystals. Copper and hydrogen ions may occupy potassium/lithium vacant sites. Hydrogen ions are also able to stay at tantalate/niobate vacant sites in the presence of titanium. This model shows that the hydrogen concentration can be dramatically reduced in KLTN:Cu,X,Ycrystals (where X, Yare any first row transition metals but not Ti or Cu), and is in agreement with experimental results. © 1997 American Institute of Physics.
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81.10.Dn Growth from solutions
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters

Surface roughening and columnar growth of thin amorphous CuTi films

U. Geyer, U. von Hülsen, and P. Thiyagarajan

Appl. Phys. Lett. 70, 1691 (1997); http://dx.doi.org/10.1063/1.118671 (3 pages) | Cited 8 times

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Different growth stages and the microstructure of amorphous CuTi films are investigated by scanning tunneling microscopy and small angle neutron scattering. During film growth at room temperature, the initially smooth films show increasing surface roughening and finally a change to a columnar growth mode with column diameters of about 20 nm. The interfacial energies associated with the column boundaries are higher than those of grain boundaries in crystalline systems. The column boundaries might be the origin of high intrinsic tensile stresses measured before in the amorphous CuTi films. © 1997 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Dq Amorphous semiconductors, metals, and alloys
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Synthesis of nanosized silver particles in ion-exchanged glass by electron beam irradiation

H. Hofmeister, S. Thiel, M. Dubiel, and E. Schurig

Appl. Phys. Lett. 70, 1694 (1997); http://dx.doi.org/10.1063/1.118672 (3 pages) | Cited 37 times

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Ag particles of 4.2 nm mean diameter have been formed inside a glass matrix, doped with silver by ion exchange, by electron beam irradiation of the glass cut into thin slices by ultramicrotomy. By this treatment, a high concentration of particles which are homogeneously arranged throughout the glass and exhibit a narrow size distribution is achieved (volume fraction of particulate silver: 3.5×10−2). The interface stress reflecting the particle/matrix interaction is comparable to that of isolated Ag particles. This new route of synthesis will allow to generate materials with strong third order nonlinear susceptibility. © 1997 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
61.80.Fe Electron and positron radiation effects
42.70.Ce Glasses, quartz
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.05.Pj Glass-based composites, vitroceramics

Nearest-neighbor distance distribution of diamond nuclei on substrate surfaces

P. Ascarelli, E. Cappelli, and F. Pinzari

Appl. Phys. Lett. 70, 1697 (1997); http://dx.doi.org/10.1063/1.118673 (3 pages) | Cited 5 times

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The origin of a nucleation density depletion around each diamond nucleus on a Si substrate surface is here related to a deformation zone induced by the diamond-substrate lattice misfit. This phenomenon determines a limitation on the maximum nucleation density obtainable. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

R. Singh, K. C. Cherukuri, L. Vedula, A. Rohatgi, and S. Narayanan

Appl. Phys. Lett. 70, 1700 (1997); http://dx.doi.org/10.1063/1.118674 (3 pages) | Cited 12 times

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In this letter, we have demonstrated phosphorus diffusion into silicon at a temperature of 700 °C using dual spectral source rapid thermal processing (RTP). The optical energy of vacuum ultraviolet irradiation in conjunction with tungsten halogen lamps (light source used in conventional RTP) is responsible for diffusion at low temperatures. Shallow junctions with high surface concentration were formed and no significant degradation in the bulk minority carrier lifetimes was observed. A qualitative explanation for the observed results is offered based on the role of photoeffects in RTP. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
66.30.J- Diffusion of impurities
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology

Morphology of epitaxial TiN(001) grown by magnetron sputtering

Brian W. Karr, I. Petrov, David G. Cahill, and J. E. Greene

Appl. Phys. Lett. 70, 1703 (1997); http://dx.doi.org/10.1063/1.118675 (3 pages) | Cited 31 times

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The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. © 1997 American Institute of Physics.
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81.15.Cd Deposition by sputtering
81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
68.55.-a Thin film structure and morphology
81.05.Bx Metals, semimetals, and alloys

A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system

D. D. Edwards, T. O. Mason, F. Goutenoire, and K. R. Poeppelmeier

Appl. Phys. Lett. 70, 1706 (1997); http://dx.doi.org/10.1063/1.118676 (3 pages) | Cited 62 times

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A new transparent conducting oxide (TCO), which can be expressed as Ga3−xIn5+xSn2O16; 0.2 ⩽ x ⩽ 1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3–In2O3–SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm−1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3. © 1997 American Institute of Physics.
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72.80.Jc Other crystalline inorganic semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.66.Bi Elemental solids
61.66.Dk Alloys

Relaxation process of Fe(CuNb)SiB amorphous alloys investigated by dynamical calorimetry

J. Zhu, M. T. Clavaguera-Mora, and N. Clavaguera

Appl. Phys. Lett. 70, 1709 (1997); http://dx.doi.org/10.1063/1.118677 (3 pages) | Cited 14 times

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Differential scanning calorimetry and dynamic differential scanning calorimetry were used to analyze the relaxation process of Fe(CuNb)SiB amorphous alloys. The Curie temperature (TC) evolution of the amorphous phase during relaxation as a function of heating rate, time and pre-annealing temperature were measured. Two distinct relaxation processes are observed, consequent with topological and chemical short range order changes. © 1997 American Institute of Physics.
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61.43.Fs Glasses
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Bb Fe and its alloys
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
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