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31 Mar 1997

Volume 70, Issue 13, pp. 1639-1771

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Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si

A. Terrasi, G. Franzò, S. Coffa, F. Priolo, F. D’Acapito, and S. Mobilio

Appl. Phys. Lett. 70, 1712 (1997); http://dx.doi.org/10.1063/1.118678 (3 pages) | Cited 52 times

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We present extended x-ray absorption fine structure (EXAFS) analyses of the Er LIII edge in Er-doped (100) Si samples. The samples were prepared by multiple implants of Er and O resulting in the incorporation of 1×1019 Er/cm3 and 1×1020 O/cm3 in a 2.3-μm-thick amorphous layer. It has been found that the local environment around the Er sites, which consists of six Si first neighbors in the amorphous layer, evolves towards a mixed coordination with O and Si atoms after epitaxial regrowth of the layer at 620 °C for 3 h. A further thermal treatment at 900 °C removes the residual Er–Si coordination and produces a full oxygen coordinated first shell with an average of 5 O neighbors. The effects of the different thermal processes on the high resolution spectra of the 1.54 μm Er photoluminescence were also measured and related to the EXAFS results. © 1997 American Institute of Physics.
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61.72.uf Ge and Si
78.70.Dm X-ray absorption spectra
61.72.Cc Kinetics of defect formation and annealing
78.55.Ap Elemental semiconductors
81.15.Np Solid phase epitaxy; growth from solid phases

Nucleation barrier of voids and dislocation loops in silicon

T. Y. Tan, P. Plekhanov, and U. M. Gösele

Appl. Phys. Lett. 70, 1715 (1997); http://dx.doi.org/10.1063/1.118652 (3 pages) | Cited 12 times

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We have calculated the nucleation energy barrier of voids and vacancy (V) type dislocation loops in Si under V-supersaturation conditions. The barrier of V-type dislocation loops is higher than that of voids by more than one order of magnitude, with the former exceeding 35 eV at attainable V-supersaturation levels. Thus, voids can be nucleated, but not dislocation loops. This provides an explanation for the observations that, in Si crystals grown under V-supersaturation conditions, voids exist but V-type dislocation loops do not. Voids seriously degrade the Si device gate oxide integrity. It is highly probable that the D-type swirl defects in Si are nanoscopic voids. Our calculated results have also provided information for limiting the formation temperature range of the D-swirl defects to be lower than ∼1050 °C, and the Si V formation enthalpy to be above ∼3.0 eV. © 1997 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.Bb Theories and models of crystal defects
61.72.Lk Linear defects: dislocations, disclinations
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Structure control of Pb(Zr,Ti)O3 films using PbTiO3 buffer layers produced by magnetron sputtering

E. Cattan, G. Velu, B. Jaber, D. Remiens, and B. Thierry

Appl. Phys. Lett. 70, 1718 (1997); http://dx.doi.org/10.1063/1.118679 (3 pages) | Cited 22 times

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The orientation of Pb(Zr,Ti)O3 (PZT) thin films grown by sputtering on a Si/SiO2/Ti/Pt substrate using a PbTiO3 (PT) buffer layer was controlled by changing the thickness of the buffer layer. The x-ray diffraction of PT as a function of the thickness, in the range of 20–400 Å, showed modification of the PT orientation. That suggests a gradual evolution of the lattice parameters in the nucleation stage of PT films. The main growth mechanism was certainly due to the passing from an island growth to a continuous layer. The (111) oriented and (100) oriented PZT films were grown on 50 and 200 Å PT buffer layers, respectively. © 1997 American Institute of Physics.  
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Excitation and deexcitation of Er3+ in crystalline silicon

P. G. Kik, M. J. A. de Dood, K. Kikoin, and A. Polman

Appl. Phys. Lett. 70, 1721 (1997); http://dx.doi.org/10.1063/1.118680 (3 pages) | Cited 62 times

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Temperature dependent measurements of the 1.54 μm photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 μs. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell. © 1997 American Institute of Physics.
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78.55.Ap Elemental semiconductors
71.55.Cn Elemental semiconductors
79.20.Fv Electron impact: Auger emission
71.35.-y Excitons and related phenomena
84.60.Jt Photoelectric conversion

Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study

M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. Giles

Appl. Phys. Lett. 70, 1724 (1997); http://dx.doi.org/10.1063/1.118681 (3 pages) | Cited 5 times

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Photoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad emission is composed of three distinct recombination processes, two are dominant at low power and a third can be detected at higher excitation power. These three bands are labeled NI, NII, and NIII with corresponding peak energies at 2.54, ∼2.58, and 2.65 eV. The NI band is accompanied by phonon replicas of energy 69±3 meV. The behaviors of the NI, NII, and NIII bands are consistent with intracenter recombination, donor–acceptor pair recombination, and electron–acceptor recombination, respectively. © 1997 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
71.55.Gs II-VI semiconductors

Size quantization effects in InAs self-assembled quantum dots

K. H. Schmidt, G. Medeiros-Ribeiro, J. Garcia, and P. M. Petroff

Appl. Phys. Lett. 70, 1727 (1997); http://dx.doi.org/10.1063/1.118682 (3 pages) | Cited 50 times

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We study size quantization effects in InAs self-assembled quantum dots (QDs) that are embedded in GaAs. Using capacitance, photoluminescence and photovoltage spectroscopy, we correlate the measured quantized level energies with the quantum dot sizes and densities obtained from transmission electron microscopy. With increasing dot size, we observe a strong redshift of the QD features in all our data. In the capacitance spectra, a band gap renormalization of the two-dimensional wetting layer system appears when the first excited QD state crosses the wetting layer ground state. The relative size dependence and absolute energetic position of the QD transitions determined with photoluminescence provide some information about the influence of lateral confinement and height of the QD. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.35.Ct Interface structure and roughness
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy

N. K. Dhar, M. Zandian, J. G. Pasko, J. M. Arias, and J. H. Dinan

Appl. Phys. Lett. 70, 1730 (1997); http://dx.doi.org/10.1063/1.118683 (3 pages) | Cited 27 times

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We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm. © 1997 American Institute of Physics.
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81.05.Dz II-VI semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Charge-separated state in strain-induced quantum dots

Y. Gu, M. D. Sturge, K. Kash, N. Watkins, B. P. Van der Gaag, A. S. Gozdz, L. T. Florez, and J. P. Harbison

Appl. Phys. Lett. 70, 1733 (1997); http://dx.doi.org/10.1063/1.118684 (3 pages) | Cited 9 times

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We have measured the time-resolved photoluminescence of strain-induced quantum dots. We show that a long-lived intermediate state is involved in the excitation transfer from the interstitial quantum well to the dot. This intermediate state has the properties expected of the charge separated state predicted by theory. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.70.-d Level splitting and interactions

Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs

B. Rheinländer, Heidemarie Schmidt, and V. Gottschalch

Appl. Phys. Lett. 70, 1736 (1997); http://dx.doi.org/10.1063/1.118685 (3 pages) | Cited 9 times

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Ellipsometric measurements of metalorganic vapor phase epitaxially grown InAs monolayers (0.5–2.0 ML) in GaAs were made at room temperature in the spectral range of the GaAs fundamental energy gap (hν = 1.3–1.5 eV). Due to the introduction of InAs single-, double-, and multilayers, the optical properties of the GaAs host material are strongly modified, depending on the number and thickness of the InAs layers. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Calibration of strain vs nuclear quadrupole splitting in III–V quantum wells

D. J. Guerrier and R. T. Harley

Appl. Phys. Lett. 70, 1739 (1997); http://dx.doi.org/10.1063/1.118686 (3 pages) | Cited 12 times

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A method is presented for direct measurement of the quadrupole splitting of nuclear magnetic resonances produced by uniaxial strain in III–V semiconductors. Strain is applied to nuclei in a lattice-matched GaAs/AlGaAs quantum well by bending the structure to a measured radius and the resulting splittings of resonances of nuclei within the well are obtained using optically detected nuclear magnetic resonance (ODNMR). Such calibration of the quadrupole splitting versus applied strain will provide the basis for a measurement of built-in strain in strained-layer heterostructures by means of ODNMR. © 1997 American Institute of Physics.
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76.70.Hb Optically detected magnetic resonance (ODMR)
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
76.60.Gv Quadrupole resonance

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Anri Nakajima, Toshiro Futatsugi, Kinjiro Kosemura, Tetsu Fukano, and Naoki Yokoyama

Appl. Phys. Lett. 70, 1742 (1997); http://dx.doi.org/10.1063/1.118653 (3 pages) | Cited 81 times

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We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to precisely control the size and position of the floating dot gate and the channel indicates the feasibility of practical single-electron memory. © 1997 American Institute of Physics.
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85.35.Gv Single electron devices
85.35.Ds Quantum interference devices
85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Excess carrier lifetime of 3C–SiC measured by the microwave photoconductivity decay method

M. Ichimura, H. Tajiri, Y. Morita, N. Yamada, and A. Usami

Appl. Phys. Lett. 70, 1745 (1997); http://dx.doi.org/10.1063/1.118643 (3 pages) | Cited 11 times

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Excess carrier lifetime of 3C–SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact microwave photoconductivity decay method. A N2 laser is used to excite carriers in the SiC layer. The measured decay curves of the excess carrier concentration have fast (τ ≈3 μs) and slow (τ >200 μs) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and the presence of traps with a very small electron capture cross section (<1×10−21 cm2) is predicted. © 1997 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.50.Mx High-frequency effects; plasma effects

Separation of plasma implantation of oxygen to form silicon on insulator

Xiang Lu, S. Sundar Kumar Iyer, Jingbao Liu, Chenming Hu, Nathan W. Cheung, Jing Min, and Paul K. Chu

Appl. Phys. Lett. 70, 1748 (1997); http://dx.doi.org/10.1063/1.118645 (3 pages) | Cited 21 times

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Separation by plasma implantation of oxygen (SPIMOX) is an economical method for silicon-on-insulator (SOI) wafer fabrication. This process employs the plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simpler implanter set-up is lower in cost and easier to maintain. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. The operational phase space on implantation condition, oxygen dose, and annealing requirement are identified. Secondary ion mass spectrometry analysis and cross-sectional transmission electron microscopy micrographs of the SPIMOX sample showed continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. © 1997 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.uf Ge and Si
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing

Enhancement of the Hall mobility in undoped GaAs with low carrier concentration by light excitation

V. Kažukauskas, G. Kühnel, and W. Siegel

Appl. Phys. Lett. 70, 1751 (1997); http://dx.doi.org/10.1063/1.118646 (3 pages) | Cited 7 times

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We report the investigation of the steady-state Hall mobility behavior upon extrinsic light excitation in n-type liquid-encapsulated Czochralski GaAs crystals. The carrier concentration of the samples measured in the dark ranged from 108 to 3×1011 cm−3. The Hall mobility demonstrated a pronounced minimum in the concentration region 109–1011 cm−3. In samples of this region a significant increase of the Hall mobility from ⩾1460 to 6300–7800 cm2 V s could be induced by light, in some cases without an increase of the measured carrier concentration. Such behavior was explained by reduction of the mesoscopic nonuniformities related to the cellular structure of dislocations by the carriers generated from defect levels in the band gap. © 1997 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

Carrie Carter-Coman, Robert Bicknell-Tassius, April S. Brown, and Nan Marie Jokerst

Appl. Phys. Lett. 70, 1754 (1997); http://dx.doi.org/10.1063/1.118647 (3 pages) | Cited 22 times

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Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs–GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrates. The In0.07Ga0.93As layers were grown to thicknesses below and above the conventional critical thickness. It was found that InGaAs films grown on the compliant substrates have a larger critical thickness and slower strain relief than InGaAs grown on conventional GaAs substrates. © 1997 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.cp X-ray diffraction

Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition

H. W. Shim, K. C. Kim, Y. H. Seo, K. S. Nahm, E.-K. Suh, H. J. Lee, and Y. G. Hwang

Appl. Phys. Lett. 70, 1757 (1997); http://dx.doi.org/10.1063/1.118648 (3 pages) | Cited 36 times

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Single crystal 3C-SiC epitaxial films are grown on Si(111) surfaces using tetramethylsilane by rapid thermal chemical vapor deposition. Strong blue/green photoluminescence (PL) was observed at room temperature from the free films of SiC prepared by etching the Si substrate. The main PL peak energy varies from 2.1 to 2.4 eV with full widths at half-maximum between 450 and 500 meV, depending on the growth condition, excitation wavelength and excitation light intensity. A weak peak at 3.0 eV also appeared. The infrared (IR) spectra of free films of SiC exhibit modes associated with CH and OH groups. We also compared PL characteristics of free films of SiC with those from porous SiC produced by anodization of SiC/Si to determine the origin of the PL. Porous SiC shows a PL peak centered at 1.9 eV, different from those in SiC. From the analysis of the IR spectra and scanning electron microscopic images, we tentatively suggest that the origin of the PL from free films of SiC might be associated with an OH group adsorbed on defects or some localized states as is the case for an amorphous SixC1−x alloy. © 1997 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
78.30.Hv Other nonmetallic inorganics

In situ controlled fabrication of stacks of high-Tc intrinsic Josephson junctions

A. Yurgens, D. Winkler, T. Claeson, and N. V. Zavaritsky

Appl. Phys. Lett. 70, 1760 (1997); http://dx.doi.org/10.1063/1.119079 (3 pages) | Cited 34 times

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Stacked series arrays of intrinsic Josephson (IJ) tunnel junctions have been fabricated on the surfaces of Bi2Sr2CaCu2O8+δ  single crystals using photolithography and Ar-ion milling together with in situ monitoring of the resulting current–voltage (I–V) characteristics. The number of unit-cell-sized junctions in the stack (along the c-axis) may be varied from 1–5 to ∼ 200 in a controlled way. The c-axis resistivity ρc, estimated from the resistance of an individual tunnel junction is ≈30 Ω cm at 90 K. The temperature dependence ρc(T)∝ exp(Λ/T) with Λ ≈ 43 meV, suggesting thermally activated hopping mechanism of transport in the c-axis direction. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.Fk Multilayers, superlattices, heterostructures
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.25.Sv Critical currents
81.65.Cf Surface cleaning, etching, patterning

Growth and properties of c-axis textured La0.7Sr0.3MnO3−δ films on SiO2/Si substrates with a Bi4Ti3O12 template layer

J. Y. Gu, C. Kwon, M. C. Robson, Z. Trajanovic, K. Ghosh, R. P. Sharma, R. Shreekala, M. Rajeswari, T. Venkatesan, R. Ramesh, and T. W. Noh

Appl. Phys. Lett. 70, 1763 (1997); http://dx.doi.org/10.1063/1.118649 (3 pages) | Cited 31 times

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c-axis textured La0.7Sr0.3MnO3−δ (LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, TC, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than TC. The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. © 1997 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.15.Fg Pulsed laser ablation deposition
73.61.-r Electrical properties of specific thin films
75.40.-s Critical-point effects, specific heats, short-range order
75.70.Ak Magnetic properties of monolayers and thin films

High exchange anisotropy and high blocking temperature in strongly textured NiFe(111)/FeMn(111) films

G. Choe and S. Gupta

Appl. Phys. Lett. 70, 1766 (1997); http://dx.doi.org/10.1063/1.118650 (3 pages) | Cited 32 times

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Strongly textured NiFe(111) underlayers, deposited by dc magnetron sputtering with applied substrate bias, are utilized to grow large, epitaxial grains of FeMn(111). These perfectly oriented (111) NiFe/FeMn bilayers exhibit the highest interfacial exchange anisotropy energy (0.17 erg/cm2), lowest coercivity (∼2 Oe) of the pinned layer, and highest blocking temperature (205 °C) ever reported, to the best of our knowledge. The relationship between the blocking temperature and the x-ray diffraction intensity of FeMn(111) indicates that the exchange interaction across the NiFe and FeMn interface is enhanced by the well-oriented, large, defect-free FeMn(111) crystals. © 1997 American Institute of Physics.
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75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.30.Gw Magnetic anisotropy
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
68.35.Ct Interface structure and roughness
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions

J. Z. Sun, L. Krusin-Elbaum, P. R. Duncombe, A. Gupta, and R. B. Laibowitz

Appl. Phys. Lett. 70, 1769 (1997); http://dx.doi.org/10.1063/1.118651 (3 pages) | Cited 86 times

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We report spin-dependent perpendicular transport in the magnetic trilayer junction structure La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. Large (factor of 5) changes of magnetoresistance induced by a field of ∼ 200 Oe are observed at 4.2 K. Junction I–V characteristics at low temperatures are consistent with a metal–insulator–metal tunneling process with a large spin-polarization factor of 0.81 for the conduction electrons. Above 100 K, a variable range-hopping conduction shunts out the magnetoresistance contribution. This second conduction channel comes from the impurity states within SrTiO3 barrier and therefore is not an intrinsic limit to the magnetoresistance performance of the device at high temperatures. © 1997 American Institute of Physics.
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75.47.De Giant magnetoresistance
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
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