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13 Jan 1997

Volume 70, Issue 2, pp. 143-274

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Optical properties of the epitaxial Pb1−xLaxTiO3 thin films grown by metalorganic chemical vapor deposition

Y. Kim and A. Erbil

Appl. Phys. Lett. 70, 143 (1997); http://dx.doi.org/10.1063/1.118340 (3 pages) | Cited 4 times

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The dispersion of the refractive indices for the epitaxial Pb1−xLaxTiO3 thin films with x=0.28 and 0.23 grown on the MgO (100) and Al2O3 (0001) substrates, respectively, has been investigated. The refractive indices in the wavelength range of 435–1523 nm were measured by a prism coupling method. At a wavelength range of 632.8 nm, the refractive index of a PLT film grown with (100) orientation was determined to be 2.609. The transmission spectrum was used as an additional measurement for the dispersion of the refractive index and showed a good agreement with the prism coupling measurements. The dispersion of refractive index fits well to a single-term Sellmeier relation. © 1997 American Institute of Physics.
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78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers

A model for optically quenched lasers

M. A. Parker and D. B. Shire

Appl. Phys. Lett. 70, 146 (1997); http://dx.doi.org/10.1063/1.118342 (3 pages) | Cited 4 times

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A model is presented for optically controlling the gain of a semiconductor laser by introducing photons from a second coherent source into the side of the laser. We find that the threshold current of the laser increases in direct proportion to the overlap between the two modes and the photon density from the coherent source. An easy-to-use, closed-form expression relates the optical power emitted from the laser to the bias and threshold currents. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

J. K. Wade, L. J. Mawst, D. Botez, M. Jansen, F. Fang, and R. F. Nabiev

Appl. Phys. Lett. 70, 149 (1997); http://dx.doi.org/10.1063/1.118343 (3 pages) | Cited 11 times

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Efficient, high-power, Al-free active-region diode lasers emitting at λ=0.83 μm have been grown by low-pressure metalorganic chemical vapor deposition. Threshold-current densities as low as 220 A/cm2, maximum continuous wave (cw) power of 4.6 W, and a maximum cw wallplug efficiency of 45% are achieved from 1 mm long, uncoated devices with In0.5(Ga0.5Al0.5)0.5P cladding layers. Further improvement is obtained by replacing the p-In0.5(Ga0.5Al0.5)0.5P cladding layer with thin (0.1 μm) electron-blocking layers of Al0.85Ga0.15As and In0.5(Ga0.5Al0.5)0.5P, and a p-In0.5(Ga0.9Al0.1)0.5P cladding layer. Such devices provide a record-high T0 of 160 K and reach catastrophic optical mirror damage (COMD) at a record-high cw power of 4.7 W (both facets). The corresponding COMD power-density level (8.7 MW/cm2)is ∼2 times the COMD power-density level for uncoated, 0.81-μm-emitting AlGaAs-active devices. Therefore, 0.81-μm-emitting, Al-free active-region devices are expected to operate reliably at roughly twice the power of AlGaAs-active region devices. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Pk Continuous operation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode

L. S. Hung, C. W. Tang, and M. G. Mason

Appl. Phys. Lett. 70, 152 (1997); http://dx.doi.org/10.1063/1.118344 (3 pages) | Cited 718 times

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A bilayer is used as an electrode for organic electroluminescent devices. The bilayer consists of an ultrathin LiF layer adjacent to an electron-transporting layer and an aluminum outerlayer. Devices with the bilayer electrode showed enhanced electron injection and high electroluminescence efficiency as compared with a Mg0.9Ag0.1 cathode. Similar effects were observed when replacing MgO for LiF. The improvements are attributed to band bending of the organic layer in contact with the dielectrics. © 1997 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Sq Composite materials
42.79.Kr Display devices, liquid-crystal devices

Frequency doubling in gallium-lanthanum-sulphide optical glass with microcrystals

V. Pruneri, P. G. Kazansky, D. Hewak, J. Wang, H. Takebe, and D. N. Payne

Appl. Phys. Lett. 70, 155 (1997); http://dx.doi.org/10.1063/1.118345 (3 pages) | Cited 6 times

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Second harmonic generation in gallium-lanthanum-sulphide (Ga:La:S) and germanium sulphide + Ga:La:S glasses is investigated. It is shown that microcrystals of Ga:La:S and α phase of gallium-sulphide (α-Ga2S3), whose presence in the glass matrix is revealed by energy dispersive spectroscopy and x-ray diffraction analysis, are responsible for the frequency doubling process. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells

S. Ten, J. G. Williams, P. T. Guerreiro, G. Khitrova, and N. Peyghambarian

Appl. Phys. Lett. 70, 158 (1997); http://dx.doi.org/10.1063/1.118346 (3 pages) | Cited 3 times

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Sharp room temperature exciton features and complete recovery of the excitonic absorption with 21 ps time constant are demonstrated in neutron irradiated (Ga,Al)As/GaAs multiple quantum wells. Carrier lifetime reduction is consistent with the EL2 midgap defect which is efficiently generated by fast neutrons. Influence of gamma rays accompanying neutron irradiation is discussed. Neutron irradiation provides a straightforward way to control carrier lifetime in semiconductor heterostructures with minor deterioration of their excitonic properties. © 1997 American Institute of Physics.
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71.35.Cc Intrinsic properties of excitons; optical absorption spectra
61.80.Hg Neutron radiation effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors

High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product

Hui Nie, K. A. Anselm, C. Hu, S. S. Murtaza, B. G. Streetman, and J. C. Campbell

Appl. Phys. Lett. 70, 161 (1997); http://dx.doi.org/10.1063/1.118341 (3 pages) | Cited 23 times

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Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2<k<0.3). We describe the frequency response of resonant-cavity AlGaAs/GaAs/InGaAs SAM APDs. A unity-gain bandwidth of 23 GHz and a high gain-bandwidth product of 130 GHz have been achieved. © 1997 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Fd III-V semiconductors

Amorphous KNbO3 thin films with ferroelectriclike properties

R. F. Xiao, H. D. Sun, H. S. Siu, Y. Y. Zhu, P. Yu, and G. K. L. Wong

Appl. Phys. Lett. 70, 164 (1997); http://dx.doi.org/10.1063/1.118347 (3 pages) | Cited 1 time

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Amorphous KNbO3 films are prepared by a low-cost sol–gel method. These films show a smooth surface morphology and have good waveguiding properties. Ferroelecticlike hysteresis loops are observed in these amorphous KNbO3 films with a remanant polarization of about 6μC/cm2. After corona poling, a stable effective second harmonic generation coefficient of 0.523 pm/V is achieved. © 1997 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Observation of a new class of crystal sonoluminescence at piezoelectric crystal surface

I. V. Ostrovskii and P. Das

Appl. Phys. Lett. 70, 167 (1997); http://dx.doi.org/10.1063/1.119252 (3 pages) | Cited 3 times

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Ultrasonic vibrations of a single-piezoelectric crystal of LiNbO3 and CdS can excite luminescence of gas near the crystal surface. Light excitation starts at ultrasonic intensity above a certain threshold. This threshold lies in the range 3–10 W/cm2 and corresponds to the unpinning of dislocations and beginning of their reversible motion in the piezoelectric crystal. The effects constitute a new class of acousto-optic and dislocation phenomena having the main feature of energy transformation from ultrasound in solid to luminescence of gas at normal atmospheric pressure. The unpinning of dislocations is shown to be critical for sonoluminescence excitation. © 1997 American Institute of Physics.
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78.60.Mq Sonoluminescence, triboluminescence
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Fast commutation of high current in double wire array Z-pinch loads

J. Davis, N. A. Gondarenko, and A. L. Velikovich

Appl. Phys. Lett. 70, 170 (1997); http://dx.doi.org/10.1063/1.118339 (3 pages) | Cited 54 times

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A dynamic model of multi-MA current commutation in a double wire array Z-pinch load is proposed and studied theoretically. Initially, the load is configured as nested concentric wire arrays, with the current driven through the outer array and imploding it. Once the outer array or the annular plasma shell formed from it approaches the inner array, the imploded plasma might penetrate through the gaps between the wires, but the azimuthal magnetic field is trapped due to both the high conductivity of the inner wires and the inductive coupling between the two parts of the array, causing a rapid switching of the total current to the inner part of the array. © 1997 American Institute of Physics.
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52.55.Ez Theta pinch
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)

Activation energy for diamond growth from the carbon–hydrogen gas system at low substrate temperatures

J. Stiegler, T. Lang, Y. von Kaenel, J. Michler, and E. Blank

Appl. Phys. Lett. 70, 173 (1997); http://dx.doi.org/10.1063/1.118348 (3 pages) | Cited 11 times

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The growth kinetics of diamond films deposited at low substrate temperatures (600–400 °C) from the carbon–hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen. © 1997 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Damage evolution and surface defect segregation in low-energy ion-implanted silicon

P. J. Bedrossian, M.-J. Caturla, and T. Diaz de la Rubia

Appl. Phys. Lett. 70, 176 (1997); http://dx.doi.org/10.1063/1.118349 (3 pages) | Cited 22 times

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We have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(111)-7×7. Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials, and we demonstrate that the distinct kinetics of each type of bulk point defect govern their surface segregation kinetics. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect migration. © 1997 American Institute of Physics.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
68.35.Dv Composition, segregation; defects and impurities
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Low pressure synthesis of bulk, polycrystalline gallium nitride

Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, and Kathleen Kash

Appl. Phys. Lett. 70, 179 (1997); http://dx.doi.org/10.1063/1.118350 (3 pages) | Cited 17 times

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Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN. © 1997 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors

Effect of energetic particles on island formation in sputter deposition of Pt on Pt(111)

Matthias Kalff, Marinus Breeman, Markus Morgenstern, Thomas Michely, and George Comsa

Appl. Phys. Lett. 70, 182 (1997); http://dx.doi.org/10.1063/1.118351 (3 pages) | Cited 23 times

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During ion beam sputter deposition besides the deposited atoms, which reach the substrate with kinetic energies in the 10 eV range, a certain amount of energetic particles also hit the substrate. These particles which have been reflected or sputtered at the target represent only a small fraction of the atoms reaching the substrate, but have energies of the order of the sputtering beam. The influence of these particles on the island formation of Pt films on a Pt(111) surface has been examined by variation of the deposition geometry, the primary ion energy, and the substrate temperature. It is demonstrated that the main effect is a dramatic increase in island density. The experimental results are in quantitative agreement with the results of a newly developed computer code. © 1997 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Direct identification of diamond growth precursor using almost pure CH4 or C2H2 near growth surface

Jih-Jen Wu and Franklin Chau-Nan Hong

Appl. Phys. Lett. 70, 185 (1997); http://dx.doi.org/10.1063/1.118352 (3 pages) | Cited 15 times

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Diamond growth was studied by injecting thermally decomposed Cl atoms into CH4/H2 or C2H2/H2. Owing to the extremely short residence time (25 μs) and low gas temperature (<1000 °C) in the decomposition system, the gas reaction is insignificant. Therefore, the carbon species near the substrate surface can be nearly identical to the input carbon source. With 0.3% CH4 being the input carbon source, CH4 remained the dominant carbon species near the surface (only 2.5% C2H2 was formed), and an almost continuous diamond film was deposited after 2 h growth. Raman spectra confirmed the formation of diamond. With 0.15% C2H2 being the input carbon source, C2H2 remained the dominant carbon species near the surface (10% CH4 was formed), but only a few very small particles were deposited. Therefore, we conclude that CH3 radicals seem the only diamond growth precursor under the Cl-rich conditions, whereas C2H2 is not efficient to grow diamond. © 1997 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.ub Fullerenes and related materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

29Si nuclear magnetic resonance of luminescent silicon

M. S. Brandt, S. E. Ready, and J. B. Boyce

Appl. Phys. Lett. 70, 188 (1997); http://dx.doi.org/10.1063/1.118199 (3 pages) | Cited 5 times

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Nuclear magnetic resonance of 29Si is used to study structural properties of porous silicon and siloxene. Evidence for changes in the chemical shift of porous silicon due to quantum confinement could not be observed. A hydride phase exhibiting a chemical shift of −75 ppm versus tetramethyl silane (TMS) is found in both porous silicon and siloxene. In as-prepared Wöhler siloxene, a chemical shift of −83 ppm versus TMS is assigned to threefold coordinated Si atoms forming a planar polysilane. © 1997 American Institute of Physics.
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76.60.Cq Chemical and Knight shifts
61.43.Gt Powders, porous materials
81.05.Cy Elemental semiconductors

Porous silicon structure studied by nuclear magnetic resonance

D. Petit, J.-N. Chazalviel, F. Ozanam, and F. Devreux

Appl. Phys. Lett. 70, 191 (1997); http://dx.doi.org/10.1063/1.118382 (3 pages) | Cited 5 times

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We present a nuclear-magnetic-resonance (NMR) study of the structure of porous silicon. Cross-polarization–magic-angle-spinning 29Si NMR shows that the silicon crystalline structure is preserved in porous silicon and that there are three protonated silicon species at the surface, which are tentatively identified as belonging to different faces. The occurrence of different environments for the surface protons is supported by the heterogeneous 1H NMR line. HF and SiF62− species were detected by 19F NMR in the electrolyte left in the pores. © 1997 American Institute of Physics.
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76.60.Cq Chemical and Knight shifts
61.43.Gt Powders, porous materials
81.05.Cy Elemental semiconductors

Spreading of a void along a singular surface during electromigration: A failure mode

X. Chu, C. L. Bauer, and W. W. Mullins

Appl. Phys. Lett. 70, 194 (1997); http://dx.doi.org/10.1063/1.118353 (3 pages) | Cited 4 times

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Previous treatments of void shape evolution during electromigration have been restricted to nonsingular void surfaces. We consider the lateral spreading of a void when its leading surface is a singular facet. The facet may nucleate at the leading surface of a void migrating within one grain or may develop when a singular surface is exposed by impingement of the void at a (transverse) grain boundary. Advance of the facet requires a source of steps that we assume to be absent; void spreading results. A stationary void shape is possible when a dimensionless parameter is less than a critical value (estimated), whereas above this value the void spreads indefinitely. © 1997 American Institute of Physics.
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66.30.Qa Electromigration
61.72.Mm Grain and twin boundaries
68.35.Fx Diffusion; interface formation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Theory of composite BxCyNz nanotube heterojunctions

X. Blase, J.-C. Charlier, A. De Vita, and R. Car

Appl. Phys. Lett. 70, 197 (1997); http://dx.doi.org/10.1063/1.118354 (3 pages) | Cited 95 times

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The stability and electronic properties of composite BxCyNznanotube heterojunctions were studied using both ab initio and semi-empirical approaches. C/BN and BC2N/BN superlattices or isolated junctions were investigated as specific examples of the wide variety of electronic devices that can be realized using such nanotubes. The characteristics of these junctions are predicted to be largely independent of the radius, helicity, multiplicity, or degree of perfection of the constituting nanotubes. © 1997 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
71.20.Tx Fullerenes and related materials; intercalation compounds
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Zx New materials: theory, design, and fabrication

Synthesis of diamondlike films by an electrochemical method at atmospheric pressure and low temperature

V. P. Novikov and V. P. Dymont

Appl. Phys. Lett. 70, 200 (1997); http://dx.doi.org/10.1063/1.118355 (3 pages) | Cited 35 times

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A technique of carbon film synthesis based on an electrochemical process was developed. A solution of acetylene in liquid ammonia was employed as the electrolyte. Films were deposited at the metallic anode. Two types of films were produced. Films of type I are transparent and fragile, whereas those of type II are black and plastic. The films were investigated by the electron diffraction method and Raman spectroscopy. The electron diffraction data for type I films demonstrate the films’ high degree of crystallinity. Values of lattice plane spacings agree with data on cubic diamond modifications. The Raman spectrum of type I films shows a line at 1334 cm−1 (full width at half-maximum equal to 15 cm−1), inherent in that of diamond and an essentially amorphous carbon component. Spectra of the type II films do not feature the Raman peak of diamond. © 1997 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology

SiH bond-bending modes of the HSi-(OSi)3 group in amorphous hydrogenated silicon dioxide

Shu-Ya Lin

Appl. Phys. Lett. 70, 203 (1997); http://dx.doi.org/10.1063/1.118367 (3 pages) | Cited 3 times

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The cluster-Bethe-lattice method is used to investigate SiH bond-bending modes of the HSi-(OSi)3 group in a-SiO2:H alloys. When the HSi-(OSi)3 group has C3 symmetry, the SiH bond-bending mode has a double degenerate frequency at 876 cm−1 as found by experiments. But when the HSi-(OSi)3 group does not have C3 symmetry, the nonsymmetrical coupling between SiH and its local bonding environment may cause the SiH bond-bending mode to split off and have an additional feature in the spectrum that is not revealed by experiments. © 1997 American Institute of Physics.
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61.43.Er Other amorphous solids
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Ferroelectric field effect in ultrathin SrRuO3 films

C. H. Ahn, R. H. Hammond, T. H. Geballe, M. R. Beasley, J.-M. Triscone, M. Decroux, Ø. Fischer, L. Antognazza, and K. Char

Appl. Phys. Lett. 70, 206 (1997); http://dx.doi.org/10.1063/1.118203 (3 pages) | Cited 45 times

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We report the observation of a ferroelectric field effect in the conducting oxide SrRuO3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O3 layer, we measured a 9% change in the resistance of a nominally 30 Å SrRuO3 film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent with n-type conduction throughout this temperature range. Hall effect measurements also yield n-type conduction, with n ≈ 2×1022 electrons/cm3, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change. © 1997 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.-e Ferroelectricity and antiferroelectricity
73.50.Dn Low-field transport and mobility; piezoresistance

Achievement of zero temperature coefficient of resistance with RuOx thin film resistors

Yong Tae Kim

Appl. Phys. Lett. 70, 209 (1997); http://dx.doi.org/10.1063/1.118368 (3 pages) | Cited 14 times

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The temperature coefficient of resistance (TCR) for an as-deposited RuO2.2 thin film resistor changes from −131.6 to 1007.95 ppm/°C after the annealing at 600 °C for 30 min. Typically, a near zero TCR about 0±0.12 ppm/°C can be obtained after annealing at 300 °C for 30 min in an Ar ambient. The changes of TCR from negative to positive is attributed to the grain growth of RuOx films from fine grain (30–40 Å) to a larger one (500–800 Å) during the annealing process. Rutherford backscattering spectroscopy and in situ x-ray photoemission spectroscopy show that the ratio of O/Ru in the RuOx film decreases from 2.2 to 2.0, due to the out diffusion of oxygen during the annealing process, which is independent of the changes in TCR. © 1997 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
73.50.Dn Low-field transport and mobility; piezoresistance
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
68.55.Nq Composition and phase identification

Electronic structure of delta-doped quantum well as a function of temperature

L. M. Gaggero-Sager and R. Pérez-Alvarez

Appl. Phys. Lett. 70, 212 (1997); http://dx.doi.org/10.1063/1.118369 (2 pages) | Cited 7 times

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We report on the electronic structure of a delta-doped quantum well of B in Si as a function of temperature from 0 K to room temperature. The calculation is carried out self-consistently in the framework of a Hartree approximation. The energy levels and the occupation number of the discrete states is reported. We conclude that the temperature is not an important factor below 60 K. If temperature is greater than 80 K the level positions are shifted but the changes in carrier concentration are not significant. We give a possible qualitative explanation of the widths of the intersubband absorption peaks. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Measuring electron transfer in real space in biased asymmetric double quantum wells using far-infrared cyclotron resonance

X.-F. He, S. R. Ryu, W. J. Li, J. Haetty, A. Petrou, B. D. McCombe, and W. Schaff

Appl. Phys. Lett. 70, 214 (1997); http://dx.doi.org/10.1063/1.118361 (3 pages) | Cited 3 times

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We report measurements of electron transfer in real space in GaAs/AlxGa1−xAs asymmetric double quantum wells under an electric field by far-infrared cyclotron resonance (CR). Due to nonparabolicity, the asymmetric quantum structure results in well-resolved CR lines, which allow contactless measurements of the electron density in each well. Our results show that electrons tunnel through the barrier from one well to the other at the level anticrossing of their ground states. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
78.30.Fs III-V and II-VI semiconductors
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