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26 May 1997

Volume 70, Issue 21, pp. 2781-2917

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Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

T. Schwander, M. Anhegger, N. Bürger, T. Feifel, K. Hirche, M. Korn, K. Panzlaff, S. Schröter, M. Warth, P. König, and A. Hangleiter

Appl. Phys. Lett. 70, 2855 (1997); http://dx.doi.org/10.1063/1.119023 (3 pages) | Cited 3 times

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Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior seems to be specific for the AlGaInAs material system, where the Stark shift is dominated by heavy holes rather than by electrons. The effect, predicted theoretically by band structure calculations, is verified by differential electrotransmission experiments at 300 and 77 K. © 1997 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
78.66.Fd III-V semiconductors
71.70.Fk Strain-induced splitting
71.20.Nr Semiconductor compounds

Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

J. P. Debray, E. Lugagne-Delpon, G. Le Roux, J. L. Oudar, and M. Quillec

Appl. Phys. Lett. 70, 2858 (1997); http://dx.doi.org/10.1063/1.119024 (3 pages) | Cited 6 times

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A monolithic vertical cavity bistable device based on the InGaAlAs system has been grown by low pressure metalorganic vapor phase epitaxy in a single run. First observation of all-optical bistability is reported in this new monolithic structure, with a contrast of 15:1 and a threshold power of less than 300 μW. X-ray diffraction and reflectivity measurements confirmed the high crystallographic and optical qualities of the material. This result shows that the InGaAlAs system is well suited to the fabrication of vertical cavity devices in the optical communication wavelength range. © 1997 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

A. Ougazzaden, Y. Le Bellego, E. V. K. Rao, M. Juhel, L. Leprince, and G. Patriarche

Appl. Phys. Lett. 70, 2861 (1997); http://dx.doi.org/10.1063/1.119025 (3 pages) | Cited 44 times

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GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors namely, dimethylhydrazine for nitrogen and tertiarybutylarsine instead of conventional arsine for arsenic, greatly facilitated growths at temperatures as low as 500 °C. Layers with N content as high as 3% and corresponding to room temperature photoluminescence (PL) peak wavelength of 1.17 μm (1.064 eV) have been obtained. © 1997 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Real space transfer in a velocity modulated transistor structure

E. B. Cohen, K. J. Webb, D. B. Janes, and M. R. Melloch

Appl. Phys. Lett. 70, 2864 (1997); http://dx.doi.org/10.1063/1.119026 (3 pages) | Cited 2 times

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We report experimental, room temperature data showing real space transfer in a heterostructure which can support the movement of electrons over a barrier in both directions between two channels. Real space transfer occurs between two channels connected in parallel in a three-gate transistor, which has been developed to interrogate the channel populations. Results are presented that demonstrate real space transfer in a heterostructure which features a 2.5:1 mobility ratio between channels. This heterostructure is designed for use in a velocity modulation transistor, which requires reciprocal, gate-assisted transfer between two channels of differing mobilities. © 1997 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition

Ali R. Mirabedini, Luke J. Mawst, Dan Botez, and Robert A. Marsland

Appl. Phys. Lett. 70, 2867 (1997); http://dx.doi.org/10.1063/1.119027 (3 pages) | Cited 6 times

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Peak current densities two times higher than the best values reported for GaAs-based resonant tunneling diode (RTD) structures have been obtained from metal-organic chemical-vapor deposition (MOCVD)-grown deep-quantum-well strained-layer In0.3Ga0.7As/Al0.8Ga0.2As RTDs. By growing on nominally exact (100) +/−0.1° GaAs substrates, we have been able to obtain smooth interfaces between the strained-layer In0.3Ga0.7As quantum well and Al0.8Ga0.2As barriers, which, in turn, enabled us to benefit from resonant tunneling through the second resonant energy level of In0.3Ga0.7As/Al0.8Ga0.2As structures. Peak current densities in excess of 300 kA/cm2, and peak-to-valley current ratios as high as 3:1, at 300 K, have been obtained from structures with 14-Å-thick barriers and a 57-Å-thick well. © 1997 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements

O. Blum, C. I. H. Ashby, and H. Q. Hou

Appl. Phys. Lett. 70, 2870 (1997); http://dx.doi.org/10.1063/1.119028 (3 pages) | Cited 15 times

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Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Ea III-V semiconductors
42.79.-e Optical elements, devices, and systems

Dislocation blocking in InxGa1−xAs (x<0.20) layers grown on GaAs substrates revealed by strain sensitive etching with aqueous CrO3–HF solutions

G. MacPherson and P. J. Goodhew

Appl. Phys. Lett. 70, 2873 (1997); http://dx.doi.org/10.1063/1.119054 (3 pages) | Cited 5 times

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Results from transmission electron microscopy (TEM), Nomarski interference microscopy and strain sensitive defect etching of epilayers with CrO3 are presented on single InxGa1−xAs (x<0.20) layers grown on GaAs substrates. The epilayer thickness in all the samples grown was significantly greater than the critical thickness (hc) defined by Matthews and Blakeslee [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)]. For these layers there should be a significant amount of relaxation with a high level of dislocation interaction observed at or near to the heteroepitaxial interface. It is shown that orthogonal dislocations, and in particular long 60° and edge dislocation segments lying in the epilayer above the interface play an important role in determining the mean free path of glissile 60° dislocations due to the action of large scale dislocation blocking. The level of dislocation blocking is significantly greater than that found by TEM observations. It is shown that etching with CrO3 is an effective method for revealing dislocation blocking over large areas of a wafer (in principle an entire wafer) and these interactions can be easily viewed using Nomarski interference microscopy. © 1997 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations
68.60.Bs Mechanical and acoustical properties

Franz–Keldysh effect in lateral GaAs/AlGaAs based npn structures

P. Baumgartner, C. Engel, G. Böhm, and G. Abstreiter

Appl. Phys. Lett. 70, 2876 (1997); http://dx.doi.org/10.1063/1.119204 (3 pages) | Cited 3 times

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Lateral npn structures, fabricated by focused laser beam-induced doping, combine large potential modulations with a small width of the p-doped regions. This results in strong lateral electric fields, which can be tuned by applying a bias voltage. Photon absorption for energies below the band gap is allowed due to the Franz–Keldysh effect. We estimate the value of the electric fields by analyzing wavelength-dependent photocurrent measurements. The fields are comparable to attainable fields in existing vertical modulator structures. The spatially resolved photocurrent measurements reveal the location of the highest lateral electric field, which is at the edges of the p-doped region. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
85.60.Bt Optoelectronic device characterization, design, and modeling

Dual Hall effects in inhomogeneous doubly connected GaAs/AlGaAs heterostructure devices

R. G. Mani

Appl. Phys. Lett. 70, 2879 (1997); http://dx.doi.org/10.1063/1.119029 (3 pages) | Cited 5 times

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Transport measurements of partially gated doubly connected 2D GaAs/AlGaAs heterostructure devices which include striplike bimodal electron density distribution are used to demonstrate that the Hall resistance determined from a fixed set of voltage contacts can be quite sensitive to connectivity between source and drain. Some experimental results investigating the effect of exchanging current and voltage leads are also presented. © 1997 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Botchkarev, W. Kim, and H. Morkoc

Appl. Phys. Lett. 70, 2882 (1997); http://dx.doi.org/10.1063/1.119030 (3 pages) | Cited 33 times

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The exciton-phonon coupling has been studied in InxGa1−xN/GaN and GaN/AlxGa1−xN multiple quantum wells (MQWs) and compared with that in InxGa1−xN and GaN epilayers. Phonon replicas with up to four phonons can be well resolved only in the alloy regions of the MQWs (InxGa1−xN or AlxGa1−xN) and was independent of the structure (well or barrier), while no phonon replicas of the exciton transitions were observed for the free-exciton transitions in the GaN and the localized exciton transitions in the InxGa1−xN epilayers. It thus suggests that the symmetry properties of MQWs, which modifies the phonon dispersion relation, together with alloy disorder are responsible for the enhanced exciton-phonon interaction in III-nitride MQW. The coupling constant S of the exciton-phonon interaction is extracted for an InxGa1−xN/GaN and GaN/AlxGa1−xN MQW, and is found to be S = 0.802 and 0.556, respectively. The implications of the modified exciton-phonon coupling in MQWs in terms of understanding the fundamental physics of this system as well as practical device applications are discussed. © 1997 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.35.Gg Exciton-mediated interactions
78.66.Fd III-V semiconductors

Many-body effects on modulation-doped InAs/GaAs quantum dots

Joo In Lee, Hyung Gyoo Lee, Eun-joo Shin, Sungkyu Yu, Dongho Kim, and Gukhyung Ihm

Appl. Phys. Lett. 70, 2885 (1997); http://dx.doi.org/10.1063/1.119031 (3 pages) | Cited 14 times

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The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

N. N. Ledentsov, D. Bimberg, Yu. M. Shernyakov, V. Kochnev, M. V. Maximov, A. V. Sakharov, I. L. Krestnikov, A. Yu. Egorov, A. E. Zhukov, A. F. Tsatsul’nikov, B. V. Volovik, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, A. O. Kosogov, et al.

Appl. Phys. Lett. 70, 2888 (1997); http://dx.doi.org/10.1063/1.119032 (3 pages) | Cited 10 times

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Transmission electron microscopy studies of low indium composition InxGa1−xAs insertions (x<0.4) in a GaAs matrix deposited by molecular beam epitaxy or by metal-organic chemical vapor deposition reveal nanoscale quasiperiodic compositional and morphological modulations. The luminescence peak wavelength is found to be a strong function of deposition parameters and can be tuned from 1.1 to 1.3 μm for the same x and average thickness of the deposit. Strained (In, Ga, Al)As lasers with such a laterally modulated InxGa1−xAs active region demonstrate significant depolarization of the electroluminescence. For short cavity length, lasing occurs at energies corresponding to transitions between InxGa1−xAs conduction band and light holelike valence band states. Devices lase at low threshold current densities and demonstrate continuous wave operation up to 3 W at room temperature. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
72.80.Ey III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

Kun Liu, Bo Zhang, Mingfang Wan, J. H. Chu, C. Johnston, and S. Roth

Appl. Phys. Lett. 70, 2891 (1997); http://dx.doi.org/10.1063/1.119044 (3 pages) | Cited 9 times

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Boron-doped diamond film sample has been grown on (100) silicon substrate using the microwave enhanced chemical vapor deposition method. It is found that the sample has very good material qualities and an excellent (100) surface morphology. Au/diamond Schottky was fabricated on the (100) surface to study electron affinity of the diamond sample. By measuring frequency dependence capacitance–voltage spectroscopy of the Schottky sample in high vacuum and at room temperature, a very small electron affinity of about 0.025 eV and a work function of about 5.165 eV have been obtained for the (100) surface of the diamond sample supposing the diamond band gap energy is 5.5 eV. © 1997 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
81.05.ub Fullerenes and related materials

Flux pinning by collective stacking faults in Y0.6Ho0.4Ba2Cu3Oy prepared by powder melting process

Yong Feng, J. G. Wen, N. Koshizuka, and Lian Zhou

Appl. Phys. Lett. 70, 2894 (1997); http://dx.doi.org/10.1063/1.119045 (3 pages) | Cited 7 times

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The correlation between microstructure and flux pinning of Y0.6Ho0.4Ba2Cu3Oy (123) sample prepared by the powder melting process method has been investigated. Transmission electron microscopy observations show that there exists a large number of novel stacking faults (double CuO chains) in this sample. The shape of the stacking faults looks like collective stairs. The stacking faults are different from those observed in the conventional melt textured 123 materials and not related to 123/Y2BaCuO5 interface. The sample is resintered at 900 °C purposefully in order to reduce the density of stacking faults. The magnetization measurements indicate that the critical current density and irreversibility lines in both field orientations (H∥c and H⊥c) are significantly reduced by the decrease in the density of stacking faults. This means that the collective stacking faults work as effective pinning centers in the 123 superconductors prepared by the powder melting process method in a wide range of temperatures and fields. © 1997 American Institute of Physics.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.72.-h Cuprate superconductors
61.72.Nn Stacking faults and other planar or extended defects

Stress release at Y2BaCuO5 inclusions in fast melt processed YBa2Cu3O7−x observed by micro-Raman spectroscopy

R. Provoost, K. Rosseel, V. V. Moshchalkov, R. E. Silverans, Y. Bruynseraede, D. Dierickx, and O. Van der Biest

Appl. Phys. Lett. 70, 2897 (1997); http://dx.doi.org/10.1063/1.119046 (3 pages) | Cited 5 times

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We have studied the interface region between the superconducting YBa2Cu3O7−x (123) matrix and the embedded nonsuperconducting Y2BaCuO5 (211) inclusions in fast melt processed samples, by recording micro-Raman spectra along lines crossing these inclusions. The observed relative shifts of the 123 Raman modes indicate the accumulation of compressive stress in the bulk of the 123 material and a release of this stress around the 211 inclusions. These results show that for practical applications of the fast melt processed materials, beside strong pinning, proper mechanical properties around the pinning centers are important. © 1997 American Institute of Physics.
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74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
74.72.-h Cuprate superconductors
74.25.Ld Mechanical and acoustical properties, elasticity, and ultrasonic attenuation

Dielectric-base transistors with doped channel

Tsunehiro Hato, Akira Yoshida, Chikako Yoshida, Hideo Suzuki, and Naoki Yokoyama

Appl. Phys. Lett. 70, 2900 (1997); http://dx.doi.org/10.1063/1.119047 (3 pages) | Cited 4 times

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The dielectric-base transistor (DBT) is expected to be coupled with various functional oxides such as high-temperature superconductors and ferroelectrics. We experimented with lowering the conduction band of the channel to reduce the operating voltage. LaTiO3 deposited on SrTiO3 supplies carriers in the SrTiO3 substrate by displacing Sr2+ and La3+. With this technique, we fabricated a YBa2Cu3O7−x/In2O3/SrTiO3/LaTiO3/SrTiO3 transistor with a partially doped channel. The transistor operates at under 1 V while maintaining a voltage amplification factor of 2, which is one order smaller than the 15 V operating voltage of a transistor with an undoped channel. The base potential relative to the emitter conduction band has been reduced to 0.3 eV. © 1997 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits

Grain boundary evolution of YBa2Cu3O7−δ in the vicinity of steps on patterned (001) LaAlO3 substrates

M. Gustafsson, E. Olsson, H. R. Yi, D. Winkler, and T. Claeson

Appl. Phys. Lett. 70, 2903 (1997); http://dx.doi.org/10.1063/1.119048 (3 pages) | Cited 3 times

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The microstructure of YBa2Cu3O7−δ(YBCO) grain boundaries obtained at step edges on (001) LaAlO3 substrates have been studied by scanning and transmission electron microscopy. A typical morphology of the YBCO grain boundaries is distinguished by two parts where the parts are expected to have different junction properties. One part of the boundary is caused by the difference in nucleation probability between the (001) surface and the inclined step facet. The second morphology is developing as a result of minimization of the YBCO surface energy. © 1997 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.35.Md Surface thermodynamics, surface energies
68.55.-a Thin film structure and morphology

A mechanism of the exchange anisotropy in Co1−xMnx/Mn bilayers: Interfacial influences

H. W. Zhao, M. Lu, Y. X. Sui, H. R. Zhai, Duan Feng, Y. Chen, G. S. Dong, and X. F. Jin

Appl. Phys. Lett. 70, 2906 (1997); http://dx.doi.org/10.1063/1.119049 (3 pages) | Cited 2 times

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The magnetic exchange anisotropy of a series of single crystal Co1−xMnx/Mn bilayers (0⩽x⩽ 0.37) is studied as a function of the Mn content. By means of ferromagnetic resonance, it is found that the exchange anisotropy shows up when 0.30⩽x⩽0.37 and disappears when x ⩽ 0.20 at room temperature. The phenomenon of Mn enrichment is observed at the Co–Mn surface by the technique of varying angle x-ray photoelectron spectroscopy, which may lead to the formation of antiferromagnetic Mn-rich interface regions and, hence, results in the exchange interaction between the ferromagnetic Co1−xMnx film and the antiferromagnetic Mn-rich interface region. © 1997 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Cc Other ferromagnetic metals and alloys
75.30.Et Exchange and superexchange interactions

Colossal magnetoresistance in epitaxial La(1−x−y)NayMnO3 thin film

M. Sahana, R. N. Singh, C. Shivakumara, N. Y. Vasanthacharya, M. S. Hegde, S. Subramanian, V. Prasad, and S. V. Subramanyam

Appl. Phys. Lett. 70, 2909 (1997); http://dx.doi.org/10.1063/1.119050 (3 pages) | Cited 33 times

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We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0 = (RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field. © 1997 American Institute of Physics.
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75.47.De Giant magnetoresistance
81.15.Fg Pulsed laser ablation deposition
71.30.+h Metal-insulator transitions and other electronic transitions

Anisotropic magnetic coupling of permalloy micron dots forming a square lattice

C. Mathieu, C. Hartmann, M. Bauer, O. Buettner, S. Riedling, B. Roos, S. O. Demokritov, B. Hillebrands, B. Bartenlian, C. Chappert, D. Decanini, F. Rousseaux, E. Cambril, A. Müller, B. Hoffmann, et al.

Appl. Phys. Lett. 70, 2912 (1997); http://dx.doi.org/10.1063/1.119051 (3 pages) | Cited 69 times

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Static magnetic and spin wave properties of square lattices of permalloy micron dots with thicknesses of 500 and 1000 Å and with varying dot separations have been investigated. A magnetic fourfold anisotropy was found for the lattice with dot diameters of 1 μm and a dot separation of 0.1 μm. The anisotropy is attributed to an anisotropic dipole–dipole interaction between magnetically unsaturated parts of the dots. The anisotropy strength (order of 105 erg/cm3) decreases with increasing in-plane applied magnetic field. © 1997 American Institute of Physics.
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75.30.Gw Magnetic anisotropy
75.30.Ds Spin waves
75.50.Tt Fine-particle systems; nanocrystalline materials

Exchange induced unidirectional anisotropy observed using Cr–Al antiferromagnetic films

T. J. Klemmer, V. R. Inturi, M. K. Minor, and J. A. Barnard

Appl. Phys. Lett. 70, 2915 (1997); http://dx.doi.org/10.1063/1.119052 (3 pages) | Cited 6 times

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Exchange induced unidirectional anisotropy has been observed in a new bilayer system consisting of a ferromagnetic FeTaN or Ni80Fe20 film coupled to an antiferromagnetic Cr–Al alloy film. Estimates of the exchange coupling energy and magnetic anisotropy constant of the antiferromagnet are made and compared to other exchange coupled systems. © 1997 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Gw Magnetic anisotropy
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