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2 Jun 1997

Volume 70, Issue 22, pp. 2931-3055

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4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. DiMarco, M. G. Harvey, R. J. Matarese, S. Y. Narayan, and J. C. Connolly

Appl. Phys. Lett. 70, 2931 (1997); http://dx.doi.org/10.1063/1.118747 (3 pages) | Cited 38 times

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AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 μm were fabricated and tested. At 10–15 °C, the uncoated SQW lasers with 2–3 mm cavity lengths exhibit a threshold current density of 115 A/cm2, a continuous-wave output power of 1.9 W, a differential efficiency of 53%, and a quasi-continuous-wave output power of 4 W. Their performance deteriorates rapidly as output losses increase beyond 10 cm−1. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Pk Continuous operation

Room-temperature holographic grating recording in CdF2:Ga

A. Suchocki, B. Koziarska, T. Langer, and J. M. Langer

Appl. Phys. Lett. 70, 2934 (1997); http://dx.doi.org/10.1063/1.118748 (3 pages) | Cited 13 times

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We demonstrate that semiconducting CdF2 crystals doped with gallium provide an efficient medium for optical storage of information in static and dynamic regimes in a temperature range close to 300 K. Ga is a bistable center in CdF2 crystals. Illumination by visible and UV light below 500 nm causes phototransformation of these centers from a deep-localized to a shallow-hydrogenic state. They are separated by a vibronic barrier that causes metastability below 250 K. The phototransformation changes the local polarizability, and thus, the local refractive coefficient. This, in turn, allows writing a phase hologram with a diffraction efficiency and decay time being temperature dependent with the activation energy Eact = 0.65±0.1 eV. A spontaneous decay of the grating is caused by a thermal recovery of the Ga impurity from the metastable hydrogenic state to the localized ground state. The writing is a local process. © 1997 American Institute of Physics.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
42.70.Ln Holographic recording materials; optical storage media
78.40.Ha Other nonmetallic inorganics

Three-dimensional metallodielectric photonic crystals exhibiting resonant infrared stop bands

K. A. McIntosh, L. J. Mahoney, K. M. Molvar, O. B. McMahon, S. Verghese, M. Rothschild, and E. R. Brown

Appl. Phys. Lett. 70, 2937 (1997); http://dx.doi.org/10.1063/1.118749 (3 pages) | Cited 40 times

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Using standard microelectronic techniques, we have fabricated arrays of infrared metallodielectric photonic crystals (IR MDPCs) on silicon substrates. The metallic “atoms” are located on a three-dimensional (100)-oriented face-centered-cubic lattice. Resonant stop-band characteristics have been measured with rejection levels of up to 20 dB and widths of up to 83% of the center frequency. We demonstrate structures with stop bands across the midinfrared wavelength range from 2 to 12 μm. Angular studies of the photonic stop bands show an insensitivity to incident angle for some of the structures. The IR MDPC results are compared with measurements made on microwave-scale MDPC structures to help in understanding the infrared results. © 1997 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers
78.30.Jw Organic compounds, polymers

Large photoinduced refractive index changes of a polymer containing photochromic norbornadiene groups

Koichi Kinoshita, Kazuyuki Horie, Sin’ya Morino, and Tadatomi Nishikubo

Appl. Phys. Lett. 70, 2940 (1997); http://dx.doi.org/10.1063/1.118750 (3 pages) | Cited 29 times

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We prepared a polymer containing pendant norbornadiene (NBD) moieties, P(MMA0.43-co-GMA0.57-PNCA), and measured absorbance and refractive index spectra before and after photoisomerization of norbornadiene moieties. Large photoinduced refractive index changes of ∼ 0.01 were obtained at 632.8 nm, the region far from the absorption band. A quantum yield of 0.50 was obtained for the photoisomerization of NBD moieties in this polymer. These values are sufficient to make efficient channel waveguides by photoisomerization. © 1997 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
84.60.Jt Photoelectric conversion

Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices

R. Cingolani, P. Prete, M. Lomascolo, G. Coli’, L. Calcagnile, N. Lovergine, G. Salviati, and L. Lazzarini

Appl. Phys. Lett. 70, 2943 (1997); http://dx.doi.org/10.1063/1.118751 (3 pages) | Cited 3 times

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We report a detailed spectroscopic study of the electronic states in ultranarrow ZnS/ZnSe superlattices. The conduction to valence band offset ratio is found to be around 8:92 in nearly pseudomorphic structures. The impact of the weak electron confinement on the optical and electronic properties is discussed, with special attention to laser applications. © 1997 American Institute of Physics.
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42.70.Hj Laser materials
78.66.Hf II-VI semiconductors
78.45.+h Stimulated emission

Error-free 2.5 Gbit/s operation of a semi-insulating buried heterostructure side-injection light-controlled bistable laser diode

T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, and T. Kurokawa

Appl. Phys. Lett. 70, 2946 (1997); http://dx.doi.org/10.1063/1.118752 (3 pages) | Cited 3 times

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We demonstrate optical response from a side-injection light-controlled bistable laser diode buried with semi-insulating InP using hydride vapor phase epitaxy. The buried surface around both the 〈110〉 and 〈−110〉 oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. After optimization of the device parameters, we obtained error-free operation at a bit rate as high as 2.5 Gbit/s. © 1997 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.Bt Optoelectronic device characterization, design, and modeling

Monolithic carbazole oligomer exhibiting efficient photorefractivity

Yadong Zhang, Liming Wang, Tatsuo Wada, and Hiroyuki Sasabe

Appl. Phys. Lett. 70, 2949 (1997); http://dx.doi.org/10.1063/1.118753 (3 pages) | Cited 16 times

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A multifunctional conjugated carbazole trimer has been designed as a monolithic photorefractive material. The photorefractive properties of this carbazole trimer were demonstrated by a two-beam coupling experiment at a wavelength of 532 nm. An asymmetric energy transfer between the two beams has been observed. A relatively large two-beam coupling net gain coefficient and a four-wave mixing diffraction efficiency have been obtained. © 1997 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics

Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers

K. Kamath, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya

Appl. Phys. Lett. 70, 2952 (1997); http://dx.doi.org/10.1063/1.118754 (2 pages) | Cited 44 times

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We report small-signal modulation bandwidth and differential gain measurements of a single-layer self-organized In0.4Ga0.6As/GaAs quantum dot laser grown by molecular beam epitaxy. The 3 dB bandwidth of single-mode ridge waveguide lasers was measured to be 7.5 GHz at 100 mA under pulsed measurements, demonstrating the possibility of high speed operation of these devices. The differential gain was measured to be 1.7×10−14 cm2. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors

A surface-emitting vacuum-deposited organic light emitting device

V. Bulović, P. Tian, P. E. Burrows, M. R. Gokhale, S. R. Forrest, and M. E. Thompson

Appl. Phys. Lett. 70, 2954 (1997); http://dx.doi.org/10.1063/1.119260 (1 page) | Cited 96 times

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We demonstrate a vacuum-deposited organic light emitting device which emits from its top surface through a transparent indium-tin-oxide anode. This device employs a novel protective cap layer which prevents damage to the organic layers during sputter deposition of the anode, while also improving hole injection. Mechanisms of current transport and carrier injection from the contacts are investigated. This device configuration allows for integration of organic light emitting devices with n-channel field effect transistors used in display active matrix backplanes. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Thermal conductivity of Si–Ge superlattices

S.-M. Lee, David G. Cahill, and Rama Venkatasubramanian

Appl. Phys. Lett. 70, 2957 (1997); http://dx.doi.org/10.1063/1.118755 (3 pages) | Cited 215 times

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The thermal conductivity of Si–Ge superlattices with superlattice periods 30<L<300 Å, and a Si0.85Ge0.15 thin film alloy is measured using the 3ω method. The alloy film shows a conductivity comparable to bulk SiGe alloys while the superlattice samples have a thermal conductivity that is smaller than the alloy. For 30<L<70 Å, the thermal conductivity decreases with decreasing L; these data provide a lower limit to the interface thermal conductance G of epitaxial Si–Ge interfaces: G> 2 × 109 W m−2 K−1 at 200 K. Superlattices with relatively longer periods, L>130 Å, have smaller thermal conductivities than the short-period samples. This unexpected result is attributed to a strong disruption of the lattice vibrations by extended defects produced during lattice-mismatched growth. © 1997 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
44.30.+v Heat flow in porous media

Control of diamond heteroepitaxy on nickel by optical reflectance

P. C. Yang, R. Schlesser, C. A. Wolden, W. Liu, R. F. Davis, Z. Sitar, and J. T. Prater

Appl. Phys. Lett. 70, 2960 (1997); http://dx.doi.org/10.1063/1.118756 (3 pages) | Cited 11 times

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Real time in situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Using this process, oriented nucleation and growth of diamond on Ni can be repeatedly achieved. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Db Elemental semiconductors and insulators
78.40.Fy Semiconductors

Giant interdiffusion induced by nitrogen doping in CdZnMgTe/CdZnTe superlattices

T. Baron, F. Kany, K. Saminadayar, N. Magnea, and R. T. Cox

Appl. Phys. Lett. 70, 2963 (1997); http://dx.doi.org/10.1063/1.118757 (3 pages) | Cited 2 times

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CdZnMgTe/CdZnTe superlattices were doped with nitrogen from a dc plasma source during their growth by molecular beam epitaxy. The samples were investigated by photoluminescence, double crystal x-ray diffraction, and secondary ion mass spectroscopy. A very strong intermixing across the quantum well interfaces was observed, producing a homogeneous alloy. The mixing is attributed to cation diffusion assisted by lattice defects generated by the simultaneous presence of Mg and N atoms. © 1997 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

A simple-cubic photonic lattice in silicon

Mitsuo Wada, Yoshiyuki Doi, Kuon Inoue, Joseph W. Haus, and Zhenyu Yuan

Appl. Phys. Lett. 70, 2966 (1997); http://dx.doi.org/10.1063/1.118758 (3 pages) | Cited 16 times

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A three-dimensional, quasi-simple-cubic, air-hole photonic crystal was fabricated in silicon. The lattice constant is 530 μm and the air-filling factor is 0.84, which corresponds to the simplest structure proposed showing a direct photonic band gap. The observed transmittance in the Γ−Z direction with five periods along each direction agrees very well with the calculated transmittance. Theoretical calculations indicate that a similar lattice with 8×8×8 periods, which can be fabricated by state-of-the-art techniques, should suffice to observe band gap effects. © 1997 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
61.66.Bi Elemental solids
81.05.Cy Elemental semiconductors

Rigid-cage effects on the optical properties of the dye 3,3′-diethyloxadicarbocyanine incorporated in silica-gel glasses

M. Casalboni, R. Senesi, P. Prosposito, F. De Matteis, and R. Pizzoferrato

Appl. Phys. Lett. 70, 2969 (1997); http://dx.doi.org/10.1063/1.118759 (3 pages) | Cited 31 times

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We investigated the optical properties of the saturable absorber 3,3′-diethyloxadicarbocyanine iodide incorporated in a matrix of silica-gel glass by the sol-gel technique. Absorption, emission, and fluorescence lifetime were studied as functions of the densification procedures. With respect to the liquid solutions, we observed a strong quenching of the P-isomer luminescence and an increase of the N-isomer fluorescence lifetime. These effects are ascribed to a restriction on the molecular photoisomerization rearrangement caused by the rigidity of the silica cage. Moreover, entrapping reduces intermolecular concentration effects. Finally, different from other glass-embedded dyes, both the absorption and the emission are blue-shifted by about 20 nm. © 1997 American Institute of Physics.
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42.70.Hj Laser materials
42.55.Mv Dye lasers
33.50.Dq Fluorescence and phosphorescence spectra
78.40.Me Organic compounds and polymers

High bond energy and thermomechanical stress in silicon on sapphire wafer bonding

P. Kopperschmidt, G. Kästner, D. Hesse, N. D. Zakharov, and U. Gösele

Appl. Phys. Lett. 70, 2972 (1997); http://dx.doi.org/10.1063/1.118760 (3 pages) | Cited 8 times

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Silicon on sapphire wafer pairs are formed by direct wafer bonding of 3-in. silicon and sapphire wafers. Subsequent annealing commonly used to increase the bond energy imposes serious thermomechanical strain. The corresponding bending, recorded in situ as a function of temperature, reveals relaxations by de- and rebonding until the silicon wafer cracks into small fragments that mostly remain bonded. After further annealing up to 800 °C and cooling to room temperature, a strong curvature of the fragments indicates a frozen-in high temperature bond state with elastic energies around 100 J/m2. Cross-sectional transmission electron microscopy of the interface reveals an amorphous intermediate layer the thickness of which considerably increases with increasing the oxygen partial pressure during annealing. © 1997 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
68.35.Ct Interface structure and roughness
81.05.Cy Elemental semiconductors

Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies

J. Yang, A. Banerjee, and S. Guha

Appl. Phys. Lett. 70, 2975 (1997); http://dx.doi.org/10.1063/1.118761 (3 pages) | Cited 117 times

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We have achieved 14.6% initial and 13.0% stable conversion efficiencies using an amorphous silicon-based alloy in a spectrum-splitting, triple-junction structure. These efficiencies have been confirmed independently by the National Renewable Energy Laboratory. Key factors leading to this major advance include improvements made in the low band-gap amorphous silicon–germanium alloy cell, the pn tunnel junction between the component cells, and the top conducting oxide. © 1997 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.61.Jc Amorphous semiconductors; glasses
73.50.Pz Photoconduction and photovoltaic effects

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

C. J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 70, 2978 (1997); http://dx.doi.org/10.1063/1.118762 (3 pages) | Cited 45 times

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See Also: Publisher's Note

Show Abstract
We report on the band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN–In0.13Ga0.87N heterointerface to be approximately 130–155 and 245–220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
78.45.+h Stimulated emission

Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga, and T. Hattori

Appl. Phys. Lett. 70, 2981 (1997); http://dx.doi.org/10.1063/1.118763 (3 pages) | Cited 6 times

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We propose an approach to control the position and the size of semiconductor islands formed by the Stranski–Krastanov growth mode. The method is to perform overgrowth on a cleaved edge of strained multiple quantum wells (SMQW), which give periodically modulated strain to the epitaxial layer. Proper choice of the growth conditions results in the formation of islands selectively on one of the constituents of the SMQW. The usefulness of this method was demonstrated by overgrowing Ge islands on the cleaved edges of Si0.8Ge0.2/Si SMQW. The Ge islands were selectively formed on the Si layer at 500 °C and on the Si0.8Ge0.2 layer at 600 °C. The former reflects the smaller critical thickness of Ge on Si, and the latter is driven by the minimization of strain energy owing to the smaller lattice mismatch between Ge and Si0.8Ge0.2. © 1997 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

Toshiki Makimoto, Hisao Saito, Toshio Nishida, and Naoki Kobayashi

Appl. Phys. Lett. 70, 2984 (1997); http://dx.doi.org/10.1063/1.118764 (3 pages) | Cited 66 times

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Dilute GaAs1−xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 1018 cm−3, and its bowing parameter is −22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy. © 1997 American Institute of Physics.
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78.55.Cr III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations

C. R. Moon, Byung-Doo Choe, S. D. Kwon, and H. Lim

Appl. Phys. Lett. 70, 2987 (1997); http://dx.doi.org/10.1063/1.118765 (3 pages) | Cited 8 times

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Carrier profiles of multiple quantum wells are studied using self-consistent simulations. The free carrier density of the well is found to be distributed nonuniformly and symmetrically, although the doping level in barriers is uniform. The calculated apparent carrier density obtainable from the capacitance-voltage profile is found to be distributed asymmetrically. Simulation results show that, even if electrons are confined in quantum wells, the apparent electron distribution can be flattened if barrier thickness or doping level in barriers are reduced to such an extent that the Debye length is comparable to the barrier thickness. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Theoretical evidence for efficient p-type doping of GaN using beryllium

Fabio Bernardini, Vincenzo Fiorentini, and Andrea Bosin

Appl. Phys. Lett. 70, 2990 (1997); http://dx.doi.org/10.1063/1.118766 (3 pages) | Cited 45 times

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Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase. Be incorporation is severely limited by the formation of Be3N2. It is shown, however, that co-incorporation with reactive species can enhance the solubility. H-assisted incorporation should lead to high doping levels in metal-organic-chemical-vapor deposition growth after post-growth annealing at about 850 K. Be-O co-incorporation produces high Be and O concentrations at molecular beam epitaxy growth temperatures. © 1997 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

Piotr Perlin, Valentin Iota, Bernard A. Weinstein, Przemek Wiśniewski, Tadeusz Suski, Petr. G. Eliseev, and Marek Osiński

Appl. Phys. Lett. 70, 2993 (1997); http://dx.doi.org/10.1063/1.118767 (3 pages) | Cited 37 times

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We have measured photoluminescence and electroluminescence in two different types of high-brightness single-quantum-well light emitting diodes manufactured by Nichia Chemical Industries with InxGa1−xN active layers (x = 0.45 and x = 0.15), under hydrostatic pressures up to 8 GPa. We discovered that the pressure shift of the primary luminescence peak in each diode is very small: 12 and 16 meV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( ≈ 40 meV/GPa) or the energy gap in InN ( ≈ 33 meV/GPa). This kind of behavior is usually associated with recombination processes involving localized states. These localized states may be associated either with band tails (arising from In fluctuations in the active layer or from high density of defects), and/or with localized excitons of various types. © 1997 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
81.40.Vw Pressure treatment

Thermally stimulated currents in polycrystalline diamond films: Application to radiation dosimetry

P. Gonon, S. Prawer, and D. Jamieson

Appl. Phys. Lett. 70, 2996 (1997); http://dx.doi.org/10.1063/1.118768 (3 pages) | Cited 17 times

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Thermally stimulated currents (TSC) were studied in polycrystalline diamond films to gain information about the trap levels in this material. The TSC glow curve is composed of a dominant peak at 555 K with smaller overlapping peaks in the 400–500 K range. The analysis of the TSC isothermal decay at high temperatures shows that the peak at 555 K is related to a trap level at 1.86 eV. The dose response and the room temperature fading rate of TSC were measured in order to evaluate the potential of these films for UV radiation dosimetry. The TSC are found to increase sublinearly with the dose over three decades and to decay with the logarithm of the storage time at room temperature. © 1997 American Institute of Physics.
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73.61.Cw Elemental semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.55.Cn Elemental semiconductors

Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

R. A. B. Devine, J.-L. Autran, W. L. Warren, K. L. Vanheusdan, and J.-C. Rostaing

Appl. Phys. Lett. 70, 2999 (1997); http://dx.doi.org/10.1063/1.118769 (3 pages) | Cited 39 times

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Interfacial degradation induced by hot-electron injection has been studied in n-channel metal oxide semiconductor transistors with channel lengths down to 0.2 μm. The devices were annealed in either H2 or D2 containing atmospheres. The channel transconductance and threshold voltage variations induced by hot-electron injection into the gate are consistent with interface state generation. Charge pumping experiments confirm this conclusion. The lifetime for a 10% reduction in the transconductance is enhanced by ∼ 10 times for devices annealed in D2 containing atmospheres as compared to those annealed in H2. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Rv Passivation
68.35.Gy Mechanical properties; surface strains

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, J. M. Poate, S. Coffa, P. G. Fuochi, and M. Lavalle

Appl. Phys. Lett. 70, 3002 (1997); http://dx.doi.org/10.1063/1.118770 (3 pages) | Cited 13 times

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We compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same total energy in nuclear collisions. Deep level transient spectroscopy was used to monitor both vacancy-type (e.g., divacancies) and interstitial-type (e.g., carbon–oxygen complexes) defects produced on p-type Si samples. We show that identical defect structures and annealing behavior, T ⩽ 300 °C, are produced by both Si implantation and electron irradiation. After annealing at higher temperatures, we observe a higher residual damage in ion implanted samples, which is a direct consequence of the extra incorporated ions. We demonstrate that the substrate impurity content rather than the ion cascade dominates defect formation and evolution. In high purity Si, B-related instead of C-related (e.g., the carbon–oxygen complex) defects preferentially store the interstitials which escape direct recombination with vacancies, and the thermal stability of the CiOi complexes is decreased in Si containing low concentration of impurities. © 1997 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
71.55.Cn Elemental semiconductors
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