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Appl. Phys. Lett. 70, 2975 (1997); http://dx.doi.org/10.1063/1.118761 (3 pages)

Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies

J. Yang, A. Banerjee, and S. Guha

United Solar Systems Corporation, Troy, Michigan 48084

(Received 28 January 1997; accepted 2 April 1997)

We have achieved 14.6% initial and 13.0% stable conversion efficiencies using an amorphous silicon-based alloy in a spectrum-splitting, triple-junction structure. These efficiencies have been confirmed independently by the National Renewable Energy Laboratory. Key factors leading to this major advance include improvements made in the low band-gap amorphous silicon–germanium alloy cell, the pn tunnel junction between the component cells, and the top conducting oxide. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 84.60.Jt

    Photoelectric conversion

  • 73.61.Jc

    Amorphous semiconductors; glasses

  • 73.50.Pz

    Photoconduction and photovoltaic effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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    References

    W. Luft, H. M. Branz, V. L. Dalal, S. S. Hegedus, and E. A. Schiff, AIP Conf. Proc. 306, 31 (1993).

    S. Guha, J. Yang, A. Pawlikiewicz, T. Glatfelter, R. Ross, and S. R. Ovshinsky, Appl. Phys. Lett. 54, 2330 (1989)APPLAB000054000023002330000001.

    S. Guha, J. Yang, P. Nath, and M. Hack, Appl. Phys. Lett. 49, 218 (1986)APPLAB000049000004000218000001.

    X. Xu, J. Yang, A. Banerjee, S. Guha, K. Vasanth, and S. Wagner, Appl. Phys. Lett. 67, 2323 (1995)APPLAB000067000016002323000001.


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