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23 Jun 1997

Volume 70, Issue 25, pp. 3329-3472

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Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

Lionel Aigouy, Todd Holden, Fred H. Pollak, N. N. Ledentsov, W. M. Ustinov, P. S. Kop’ev, and D. Bimberg

Appl. Phys. Lett. 70, 3329 (1997); http://dx.doi.org/10.1063/1.119160 (3 pages) | Cited 42 times

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Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs laser structure. Signals have been observed from all the relevant portions of the sample including the QDs and wetting layer. The energies of the QD transitions provide evidence for both lateral as well as vertical coupling. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects

Interstitial defects in silicon from 1–5 keV Si+ ion implantation

Aditya Agarwal, Tony E. Haynes, David J. Eaglesham, Hans-J. Gossmann, Dale C. Jacobson, John M. Poate, and Yu. E. Erokhin

Appl. Phys. Lett. 70, 3332 (1997); http://dx.doi.org/10.1063/1.119161 (3 pages) | Cited 41 times

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Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3×1014 cm−2 and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface, {311}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding ∼1% of the atomic density also contain some {311} defects which are corrugated across their width. These so-called zig-zag {311} defects are more stable than the ordinary {311} defects, having a dissolution rate at 750 °C which is ten times smaller. Due to their enhanced stability, the zig-zag {311} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {311} defects form during the early stages of annealing by coalescence the high volume density of {311} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. © 1997 American Institute of Physics.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Demonstration of 110 GHz electro-optic polymer modulators

Datong Chen, Harold R. Fetterman, Antao Chen, William H. Steier, Larry R. Dalton, Wenshen Wang, and Yongqiang Shi

Appl. Phys. Lett. 70, 3335 (1997); http://dx.doi.org/10.1063/1.119162 (3 pages) | Cited 167 times

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Electro-optic modulation up to 113 GHz has been demonstrated using traveling wave polymer modulators. The modulation signal was directly detected at 1.3 μm using a laser heterodyne system with an external-cavity tunable semiconductor laser. The device optical response variation, as a function of frequency over the whole W band, was within 3 dB. A well-matched coplanar probe was used to launch W band millimeter wave driving power into the microstrip line electrode on the device. Based upon these measurements, high speed electrodes with integrated millimeter wave transitions had been fabricated and tested. © 1997 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Jk Polymers and organics
42.82.Bq Design and performance testing of integrated-optical systems

Cobalt doping in BaTiO3 thin films by two-target pulsed KrF laser ablation with in situ laser annealing

Atsushi Ito, Akihiko Machida, and Minoru Obara

Appl. Phys. Lett. 70, 3338 (1997); http://dx.doi.org/10.1063/1.119163 (3 pages) | Cited 7 times

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Cobalt doped BaTiO3 thin films have been fabricated using two-target pulsed laser ablation with in situ laser annealing. KrF laser ablated simultaneously both BaTiO3 and Co3O4 sintered targets and the cobalt concentration could simply be controlled at the concentration range of 0.08%–5% by adjusting laser fluences, off-axis deposition angles, and laser-irradiated area for Co ablation. All Co:BaTiO3 films were epitaxially grown on MgO(100) substrate. Optical absorption coefficients were measured at visible region of the spectrum with increasing Co dopant concentrations. © 1997 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High-repetition-rate femtosecond optical parametric oscillator based on periodically poled lithium niobate

Kent C. Burr, C. L. Tang, Mark A. Arbore, and Martin M. Fejer

Appl. Phys. Lett. 70, 3341 (1997); http://dx.doi.org/10.1063/1.119164 (3 pages) | Cited 24 times

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A high-repetition-rate, femtosecond optical parametric oscillator based on bulk periodically poled lithium niobate is described. This optical parametric oscillator is continuously tunable from 1.12 to 1.50 μm in the signal branch, and signal pulses as short as 60 fs have been observed. The corresponding turning range for the idler branch is from 1.68 to 2.72 μm. Modifications which should result in a femtosecond optical parametric oscillator with a pumping threshold of less than 50 mW are discussed. © 1997 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Multi-wavelength lasing oscillation of a Vernier-type unidirectional Er3+-doped fiber compound ring

Y. Zhao and C. Shu

Appl. Phys. Lett. 70, 3344 (1997); http://dx.doi.org/10.1063/1.119165 (3 pages)

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A Vernier-type unidirectional Er3+-doped fiber compound ring is constructed. Simultaneous lasing oscillations at multiple wavelengths are obtained by adopting a number of fiber gratings as the wavelength selective elements. The output exhibits reduced linewidths and nearly identical powers at the emission wavelengths, and the spectrum is free from parasitic oscillations. © 1997 American Institute of Physics.
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42.55.Wd Fiber lasers
42.81.Bm Fabrication, cladding, and splicing

Polymer waveguides with optimized overlap integral for modal dispersion phase-matching

W. Wirges, S. Yilmaz, W. Brinker, S. Bauer-Gogonea, S. Bauer, M. Jäger, G. I. Stegeman, M. Ahlheim, M. Stähelin, B. Zysset, F. Lehr, M. Diemeer, and M. C. Flipse

Appl. Phys. Lett. 70, 3347 (1997); http://dx.doi.org/10.1063/1.119166 (3 pages) | Cited 11 times

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Modal dispersion phase-matched second harmonic generation is demonstrated in new poled polymer waveguide geometries with a nonlinear optical core consisting of two side-chain polymers with different glass transition temperatures. After poling above and between the respective glass transitions, the sign of the nonlinear optical coefficient is reversed in the two polymers, thereby improving the overlap integral. Conversion efficiencies up to 7%/W cm2 were achieved in the first experiments. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays

Polarization switching in vertical-cavity surface emitting lasers observed at constant active region temperature

J. Martín-Regalado, J. L. A. Chilla, J. J. Rocca, and P. Brusenbach

Appl. Phys. Lett. 70, 3350 (1997); http://dx.doi.org/10.1063/1.119167 (3 pages) | Cited 48 times

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Polarization switching in gain-guided, vertical-cavity, surface-emitting lasers was studied as a function of the active region temperature. We show that polarization switching occurs even when the active region temperature is kept constant during fast pulse low duty cycle operation. This temperature independent polarization switching phenomenon is explained in terms of a recently developed model. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Identification and optimization of advanced phosphors using combinatorial libraries

Xiao-Dong Sun, Chen Gao, Jingsong Wang, and X.-D. Xiang

Appl. Phys. Lett. 70, 3353 (1997); http://dx.doi.org/10.1063/1.119168 (3 pages) | Cited 36 times

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A combination of thin-film deposition and physical masking steps were used to generate libraries of the rare earth activated refractory metal oxides, Gd(La,Sr)AlOx. Systematic variation of composition and processing conditions afforded tricolor phosphors with the following nominal compositions, (Gd0.46Sr0.31)Al1.23OxF1.38:Eu0.062+ (green), La0.5Al1.5Ox:Eu0.042+ (blue), and Gd0.77Al1.23Ox:Eu0.063+ (red), which had quantum efficiencies of ⩾94%, ≃60%, and ⩾93%, respectively at λmaxex. The high quenching temperatures (250–350 °C), good chromaticities and refractory nature of these phosphors are desirable features for display applications. © 1997 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Sq Composite materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Optical switches based on magnesium lanthanide alloy hydrides

P. van der Sluis, M. Ouwerkerk, and P. A. Duine

Appl. Phys. Lett. 70, 3356 (1997); http://dx.doi.org/10.1063/1.119169 (3 pages) | Cited 92 times

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It is shown that thin layers of palladium coated magnesium lanthanide alloys reversibly go through an optical transition by variation of the hydrogen concentration, just as has recently been shown for pure lanthanides. With these layers optical switches can be constructed that exhibit three different optical states: a color-neutral transparent state at high hydrogen concentration, a nontransparent dark absorbing state at intermediate hydrogen pressures, and a highly reflective metallic state at low hydrogen pressures. The ratio in transmission between the transparent state and the reflecting state is more than 1000. © 1997 American Institute of Physics.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Bz Metals and metallic alloys

Azimuthal surface gliding of a nematic liquid crystal

V. P. Vorflusev, H.-S. Kitzerow, and V. G. Chigrinov

Appl. Phys. Lett. 70, 3359 (1997); http://dx.doi.org/10.1063/1.119170 (3 pages) | Cited 35 times

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In-plane surface gliding of a thermotropic nematic liquid crystal is investigated at substrates with weak azimuthal anchoring energy under different external electric fields parallel to the substrates. The anchoring is a result of photoinduced anisotropy in a poly-(vinyl)-alcohol alignment layer with embedded azodye molecules. The experimentally measured time constant, which describes the gliding, is inversely proportional to the electric field strength. The surface viscosity value of the liquid crystal director at the substrates extracted from the presented model is estimated as γs ≥ 0.33 Js/m2. © 1997 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
66.20.-d Viscosity of liquids; diffusive momentum transport

Studies of Mn valence conversion and oxygen vacancies in La1−xCaxMnO3−y using electron energy-loss spectroscopy

Z. L. Wang, J. S. Yin, Y. D. Jiang, and Jiming Zhang

Appl. Phys. Lett. 70, 3362 (1997); http://dx.doi.org/10.1063/1.119171 (3 pages) | Cited 23 times

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Using the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1−xCaxMnO3−y. For a nominal doping composition x = 0.33, the ratio of Mn4+ to Mn3+ is determined to be more than 0.25 but less than 0.5, and the content of oxygen vacancy y is no more than 0.065 (equivalent to 2.2 at. % of the oxygen content). At ymax = 0.065, 60% of the residual charge introduced by Ca doping is balanced by the conversion of Mn3+to Mn4+ and 40% by oxygen vacancy. © 1997 American Institute of Physics.
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61.72.J- Point defects and defect clusters
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
75.50.Dd Nonmetallic ferromagnetic materials

Shock-induced chemical reactions in a Ni/Al powder mixture

Y. Yang, R. D. Gould, Y. Horie, and K. R. Iyer

Appl. Phys. Lett. 70, 3365 (1997); http://dx.doi.org/10.1063/1.119172 (3 pages) | Cited 7 times

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A new 50 mm powder gun was used to reproduce and to extend the real-time observations of ultra-fast exothermic reactions in a Ni/Al powder mixture at the shock front. Shock profiles measured by a manganin gauge show that (1) the threshold pressure for reaction is about 14 GPa; (2) the initiation criteria based either on shock energy or melting are in contradiction with experimental evidence. © 1997 American Institute of Physics.
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82.40.Fp Shock wave initiated reactions, high-pressure chemistry
62.50.-p High-pressure effects in solids and liquids
81.05.Bx Metals, semimetals, and alloys

Microstructual study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Tae-Yeon Seong, Do-Geun Kim, Kwang-Ki Choi, and Young-Joon Baik

Appl. Phys. Lett. 70, 3368 (1997); http://dx.doi.org/10.1063/1.119173 (3 pages) | Cited 7 times

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The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2–10 nm in size and the diamond crystallites 5–30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼ 2.7×1011 to ∼ 1.6×1012 cm−2, while that of the diamond crystallites varies from ∼ 2.0×109 to ∼ 4.1×1010 cm−2. Discrepancy between the densities obtained using TEM and AFM is discussed. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.ub Fullerenes and related materials

Selective Cu-atom transportation from a tip of scanning tunneling microscope onto an Ag(110) surface by chemical reaction

Y. Okawa and K. Tanaka

Appl. Phys. Lett. 70, 3371 (1997); http://dx.doi.org/10.1063/1.119174 (3 pages) | Cited 2 times

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Cu-atom transportation from a tip of scanning tunneling microscope onto an Ag(110) surface was performed using chemical reactions. A copper coated tungsten tip was obtained by scanning a Cu surface. By scanning an Ag(110) surface with the copper coated tip in the presence of O2, the growth of Cu–O rows was observed on the surface, that is, a chemical transportation of Cu atoms occurs by reacting with oxygen. When an Ag(110) surface was covered with an Ag–O domain and a carbonate domain, a selective chemical transportation of Cu atoms from the tip onto the carbonate domain was attained. Contrary to this, when the Cu atoms were vaporized over the surface, the Cu atoms preferentially reacted with the Ag–O domain. © 1997 American Institute of Physics.
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07.79.Cz Scanning tunneling microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Carrier trapping due to Fe3+/ Fe2+ in epitaxial InP

D. Söderström, S. Marcinkevićius, S. Karlsson, and S. Lourdudoss

Appl. Phys. Lett. 70, 3374 (1997); http://dx.doi.org/10.1063/1.119175 (3 pages) | Cited 12 times

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Time-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or with iron and sulphur to gain information on the carrier trapping characteristics of Fe3+/Fe2+. The carrier trapping time was found to be dependent on both the iron and sulphur concentrations, from which the electron and hole capture cross sections of the Fe deep centers are determined as σe = 1×10−15 cm2 and σh = 6×10−15 cm2, respectively. © 1997 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
81.05.Ea III-V semiconductors

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. C. Look and R. J. Molnar

Appl. Phys. Lett. 70, 3377 (1997); http://dx.doi.org/10.1063/1.119176 (3 pages) | Cited 169 times

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Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by assuming a thin, degenerate n-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties below 30 K, but also significantly affects those properties even at 400 K, and can cause a second, deeper donor to falsely appear in the analysis. However, by using a two-layer Hall model, the bulk mobility and carrier concentration can be accurately ascertained. © 1997 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance

Measurement of single interface trap capture cross sections with charge pumping

N. S. Saks

Appl. Phys. Lett. 70, 3380 (1997); http://dx.doi.org/10.1063/1.119177 (3 pages) | Cited 5 times

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A technique has been developed using charge pumping to determine electron and hole capture cross sections of individual interface traps in small silicon metal–oxide–semiconductor transistors. Values for both cross sections are ≈ 10−16 cm2 for the particular trap measured. © 1997 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

W.-X. Ni, K. B. Joelsson, C.-X. Du, I. A. Buyanova, G. Pozina, W. M. Chen,, G. V. Hansson, B. Monemar, J. Cardenas, and B. G. Svensson

Appl. Phys. Lett. 70, 3383 (1997); http://dx.doi.org/10.1063/1.119178 (3 pages) | Cited 23 times

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Er, together with oxygen or fluorine as co-dopants, has been incorporated into Si during molecular beam epitaxial growth using co-evaporation of Si and Er containing compounds. The Er doping concentration using both Er2O3 and ErF3 can reach a level of ∼ 5×1019 cm−3 without precipitation, which is at least one order of magnitude higher than a previously reported solid solubility limit for Er in Si. Growth, structural, and luminescence characterization of these Er/O and Er/F doped Si samples are reported. In particular, 1.54 μm electroluminescence has been observed from Er/O doped Si layers at room temperature through hot electron impact excitation. © 1997 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy Elemental semiconductors
78.60.Fi Electroluminescence

The impact of using AlGaAs as a carrier supplying layer in an InAlAs/InGaAs high electron mobility transistor structure on thermal stability

Mitsuru Tanabe, Noboru Kashiwagi, Toshinobu Matsuno, and Akiyoshi Tamura

Appl. Phys. Lett. 70, 3386 (1997); http://dx.doi.org/10.1063/1.119179 (3 pages) | Cited 1 time

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The impact of using a thin AlGaAs layer as a carrier supplying layer in an InAlAs/InGaAs high electron mobility transistor structure (HEMT) on thermal stability has been investigated. The new structure exhibited no deterioration in its sheet carrier concentration after annealing for 15 min at 450 °C in nitrogen atmosphere, while in the conventional HEMT structure 20% deterioration was observed. The secondary ion mass spectroscopy analysis indicated that this excellent thermal stability originated from the absence of reaction between dopant and fluorine. By exposing the new and conventional HEMT structure in a fluorine atmosphere, it was obvious that the new structure had at least a five times higher tolerance to fluorine. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
68.60.Dv Thermal stability; thermal effects
81.05.Ea III-V semiconductors

Effect of surface acoustic waves on low-temperature photoluminescence of GaAs

K. S. Zhuravlev, D. V. Petrov, Yu. B. Bolkhovityanov, and N. S. Rudaja

Appl. Phys. Lett. 70, 3389 (1997); http://dx.doi.org/10.1063/1.119180 (3 pages) | Cited 22 times

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The near-band-gap low-temperature photoluminescence (PL) in a pure film of GaAs in the presence of surface acoustic waves (SAW) has been studied experimentally. The complex behavior of the PL peak intensities with SAW power in the excitonic and acceptor spectral regions results from a charge bunching due to the piezoelectric field of SAW. © 1997 American Institute of Physics.
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78.55.Cr III-V semiconductors
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.35.Pt Surface waves in solids and liquids

Indium diffusion in n-type gallium arsenide

W. M. Li, R. M. Cohen, D. S. Simons, and P. H. Chi

Appl. Phys. Lett. 70, 3392 (1997); http://dx.doi.org/10.1063/1.119181 (3 pages) | Cited 8 times

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Diffusion of indium markers at T = 900 °C have been measured in undoped and Te-doped GaAs epilayers grown by organometallic vapor phase epitaxy. The diffusivity was found to be a linear function of electron concentration over the range n = 2×1017–1.5×1019 cm−3. The results are consistent with the interdiffusion of AlAs–GaAs superlattices, and the diffusivities of In and Al in GaAs at 900 °C are found to be essentially identical within experimental noise. The results strongly suggest that group III interdiffusion in GaAs is controlled by a Ga vacancy with a charge of −1. © 1997 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition

K. Tateno, Y. Ohiso, C. Amano, A. Wakatsuki, and T. Kurokawa

Appl. Phys. Lett. 70, 3395 (1997); http://dx.doi.org/10.1063/1.119182 (3 pages) | Cited 18 times

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Vertical-cavity surface-emitting laser (VCSEL) structures have been grown on GaAs (311)B substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with smooth surface morphology and a hole concentration of 1018 cm−3 were obtained by optimizing the growth conditions; these conditions contributed to high-quality p-type distributed Bragg reflectors (DBRs). The devices on the (311)B substrates exhibited a threshold current of 9.6 mA, voltage of 2.1 V, and maximum power of 4.1 mW at a 20 μm ϕ size; these characteristics are similar to those obtained on (100) substrates. The polarization was aligned to [233]. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Self-assembled-monolayer film islands as a self-patterned-mask for SiO2 thickness measurement with atomic force microscopy

T. Komeda, K. Namba, and Y. Nishioka

Appl. Phys. Lett. 70, 3398 (1997); http://dx.doi.org/10.1063/1.119183 (3 pages) | Cited 7 times

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A novel method for measuring ultrathin (2–12 nm) SiO2 film thickness is discussed. The process consists of: (1) formation of octadecyltrichlorosilane (OTS) self-assembled-monolayer (SAM) islands on SiO2 of which thickness to be measured, (2) removal of the SiO2 layers not covered by the OTS-SAM islands, and (3) measurement of the height difference between the etched and nonetched areas by atomic-force-microscopy. The OTS film is good resist against HF and its islands can be regarded as self-patterned-mask. Practical usefulness is demonstrated not only by the compatibility of the measured values but also by the short measurement period resulting from the directness of the method. © 1997 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.65.Cf Surface cleaning, etching, patterning

Depletion of charge around mesoscopic voids in semiconductors

D. D. Nolte

Appl. Phys. Lett. 70, 3401 (1997); http://dx.doi.org/10.1063/1.119184 (3 pages) | Cited 4 times

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Self-consistent Hartree–Fock energy levels of mesoscopic voids in tetrahedrally bonded semiconductors are calculated within the Haldane–Anderson model revealing a high-multiplicity Coulomb ladder of discrete charge-state energies distributed across the semiconductor band gap. These discrete states can compensate shallow dopants. In GaAs, voids with radii of only 5 nm can compensate as many as 25 charges of either sign, producing depletion spheres around the voids in doped n-type or p-type material. The compensation and depletion behavior of the voids is similar to the behavior of metallic precipitates in nonstoichiometric GaAs. © 1997 American Institute of Physics.
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61.72.Bb Theories and models of crystal defects
61.72.Qq Microscopic defects (voids, inclusions, etc.)
73.23.Hk Coulomb blockade; single-electron tunneling
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