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Applied Physics Letters / Volume 70 / Issue 26

Appl. Phys. Lett. 70, 3543 (1997); http://dx.doi.org/10.1063/1.119227 (3 pages)

Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

J. Černe1, J. Kono2, T. Inoshita2, M. Sherwin1, M. Sundaram3, and A. C. Gossard3

1Department of Physics and Center for Terahertz Science and Technology, University of California, Santa Barbara, California 93106
2Quantum Transition Project, Japan Science and Technology Corporation, Tokyo 153, Japan
3Materials Department, University of California, Santa Barbara, California 93106

(Received 18 September 1996; accepted 21 April 1997)

GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency ωnir and intense far-infrared (FIR) radiation from a free-electron laser at ωfir. Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at ωsideband = ωnir±2ωfir. The intensity of the sidebands is enhanced when either ωsideband or ωnir is near the onset of NIR absorption in the quantum well, or when ωfir is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, multiwave mixing, infrared spectra, semiconductor quantum wells, laser beam effects

PACS

  • 78.66.Fd

    III-V semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 42.65.Jx

    Beam trapping, self-focusing and defocusing; self-phase modulation

  • 78.20.Ls

    Magneto-optical effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.119227

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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