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30 Jun 1997

Volume 70, Issue 26, pp. 3489-3619

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Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

V. Bousquet, E. Tournié, M. Laügt, P. Vennéguès, and J. P. Faurie

Appl. Phys. Lett. 70, 3564 (1997); http://dx.doi.org/10.1063/1.119234 (3 pages) | Cited 23 times

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We report on the molecular-beam epitaxy of ZnBeSe ternary alloys lattice matched onto GaAs substrates. We demonstrate that these alloys can be grown with a high structural perfection. X-ray linewidths down to 27 arcsec are obtained even though the growth is carried out on bare substrates. Transmission electron microscopy reveals the high quality of the interface. Photoluminescence spectra of undoped layers are dominated by free-exciton recombinations. The excitonic gap is determined to be 2.863 eV at 9 K. Finally, high carrier concentrations are obtained for both n-type and p-type doping. These results are promising in view of fabricating laser diodes with this material system. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Impact ionization coefficients in GaInP p–i–n diodes

R. Ghin, J. P. R. David, M. Hopkinson, M. A. Pate, G. J. Rees, and P. N. Robson

Appl. Phys. Lett. 70, 3567 (1997); http://dx.doi.org/10.1063/1.119235 (3 pages) | Cited 9 times

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Impact ionization coefficients have been deduced from photomultiplication measurements performed on Ga0.52In0.48P p–i–n diodes with nominal intrinsic region thicknesses of 1 .0, 0.7, and 0.2 μm. The results indicate that β, the hole ionization coefficient, is slightly greater than α, the electron ionization coefficient at low fields, and they both become effectively equal at high fields. α and β are also found to be significantly lower than GaAs across the range of electric fields studied, with correspondingly higher breakdown voltages. © 1997 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
72.80.Ey III-V and II-VI semiconductors

Laser crystallization and structuring of amorphous germanium

M. Mulato, D. Toet, G. Aichmayr, P. V. Santos, and I. Chambouleyron

Appl. Phys. Lett. 70, 3570 (1997); http://dx.doi.org/10.1063/1.119236 (3 pages) | Cited 15 times

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The short-pulse laser crystallization and interference structuring of amorphous germanium films were investigated by time resolved reflection measurements and Raman spectroscopy. We demonstrate that submicrometer crystalline structures with very sharp lateral interfaces can be produced by laser interference crystallization of nonhydrogenated samples. In hydrogenated films, on the other hand, the film surface disrupts upon laser exposure leading to the formation of a free-standing crystalline membrane. The Raman spectra of laser crystallized germanium display effects of finite crystallite size and stress. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
61.43.Dq Amorphous semiconductors, metals, and alloys

Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

D. K. Sengupta, T. Horton, W. Fang, A. Curtis, J. Li, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, A. Kar, J. Mazumder, L. Li, and H. C. Liu

Appl. Phys. Lett. 70, 3573 (1997); http://dx.doi.org/10.1063/1.119237 (3 pages) | Cited 4 times

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The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8–12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP’s response. © 1997 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.66.Fd III-V semiconductors

Transient ion drift detection of low level copper contamination in silicon

T. Heiser, S. McHugo, H. Hieslmair, and E. R. Weber

Appl. Phys. Lett. 70, 3576 (1997); http://dx.doi.org/10.1063/1.119238 (3 pages) | Cited 21 times

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The transient ion drift (TID) method was used to measure quenched interstitial copper concentrations in both copper plated and copper implanted silicon. Comparison with existing literature data allows one to conclude that, contrary to the general expectation, it is possible to quench in most of the Cu dissolved at temperatures of 600 °C and below. This result suggests that the TID technique could be an excellent means to detect copper contamination in p-type silicon. The expected detection limit, on the order of 1011 cm−3, makes the method a potentially interesting tool to use in gettering or in-diffusion barrier studies. © 1997 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.uj III-V and II-VI semiconductors
66.30.H- Self-diffusion and ionic conduction in nonmetals

Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

Kenichi Nishi, Takayoshi Anan, Akiko Gomyo, Shigeru Kohmoto, and Shigeo Sugou

Appl. Phys. Lett. 70, 3579 (1997); http://dx.doi.org/10.1063/1.119239 (3 pages) | Cited 21 times

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Spontaneous lateral alignment was observed in InGaAs quantum dots formed by self-assembly on (311)B GaAs by gas source molecular beam epitaxy. The alignment occurred in a direction inclined about 60° from the [011] direction on a (3-11) [(311)B] surface. A typical base diameter of the dots was about 120±10 nm. The heights varied from 3 to 13 nm as the nominal thickness of the InGaAs layer increased from 4 to 8 nm. The formation mechanism for the alignment is studied based on the growth thickness dependence of the dot structures. A photoluminescence linewidth of 24 meV was obtained from 9 nm high dots at 77 K, indicating the formation of a uniform dot structure. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Subband electron densities of Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures

G. Li, A. Babinski, and C. Jagadish

Appl. Phys. Lett. 70, 3582 (1997); http://dx.doi.org/10.1063/1.119240 (3 pages) | Cited 8 times

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Magnetotransport properties of Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures grown by metalorganic vapor phase epitaxy have been investigated in magnetic fields up to 12 T in the dark at 1.7 K. Different δ-doping configurations, in which the same Si δ-doped layer was placed at different positions with respect to the In0.2Ga0.8As well, have been studied to clarify their effect on subband electron densities in the well. Very high electron densities of >4×1012 cm−2 were obtained when placing a Si δ-doped layer at the well center or the well–barrier interface. We found that one subband was occupied in the well-center-doped structure, but when the Si δ-doped layer was at the well–barrier interface, the second subband in the well became occupied. The electron density of Si δ-modulation-doped In0.2Ga0.8As/GaAs heterostructures, in which the cap barrier or the buffer barrier was Si δ doped, was in the order of <1.2×1012 cm−2. The Si δ doping in both of the barriers led to an increase of the electron density by almost a factor of 2. Owing to an incomplete transfer of the electrons from the Si δ-doped layers to the well, parallel conduction was observed in the Si δ-modulation-doped structures. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Evaluation of the CdS/CdTe interface using free-electron laser internal photoemission technique

Kazuhisa Nishi, Hideaki Ohyama, Toshiji Suzuki, Tsuneo Mitsuyu, and Takio Tomimasu

Appl. Phys. Lett. 70, 3585 (1997); http://dx.doi.org/10.1063/1.119241 (3 pages) | Cited 6 times

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The CdS/CdTe interface was investigated by the free-electron laser (FEL) internal photoemission technique. This technique is based on photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. We found two thresholds in the photocurrent spectrum, which can be identified as steplike band discontinuities. It is demonstrated that there is a mixed crystal layer of CdS1−xTex at the CdS/CdTe interface. © 1997 American Institute of Physics.
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71.55.Gs II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

J. Walachová, J. Zelinka, J. Vaniš, D. H. Chow, J. N. Schulman, S. Karamazov, M. Cukr, P. Zich, J. Král, and T. C. McGill

Appl. Phys. Lett. 70, 3588 (1997); http://dx.doi.org/10.1063/1.119274 (3 pages) | Cited 4 times

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InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spectroscopy. Current thresholds attributed to quasibound states in the quantum well and emission over the AlSb barriers are observed. The observed shape of thresholds is consistent with inelastic processes in the InAs layers of the structures, where a high number of electron–hole pairs are generated. A threshold consistent with the generation of electron–hole pairs in quantum well states is observed. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

C. De Matos, A. Le Corre, H. L’Haridon, S. Gosselin, and B. Lambert

Appl. Phys. Lett. 70, 3591 (1997); http://dx.doi.org/10.1063/1.119242 (3 pages) | Cited 10 times

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Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device structure consists of a MQW doped with Fe (1017 cm−3) isolated from the doped contact by intrinsic standoff layers. The photocarriers generated by the pump pulse are trapped in the MQW and screen the applied electric field in the MQW. Output diffraction efficiency of 0.2% is measured in a nondegenerate four-wave-mixing configuration and the rise time of the diffraction signal reaches 200 ns. © 1997 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
42.79.Hp Optical processors, correlators, and modulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Thermally stimulated luminescence from x-irradiated porous silicon

D. W. Cooke, B. L. Bennett, E. H. Farnum, W. L. Hults, R. E. Muenchausen, and J. L. Smith

Appl. Phys. Lett. 70, 3594 (1997); http://dx.doi.org/10.1063/1.119243 (3 pages) | Cited 30 times

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We have measured thermally stimulated luminescence from light-emitting porous silicon that has been x irradiated at room temperature and heated to 400 °C. The glow curve exhibits peaks at 103, 155, 219, and 271 °C, with additional maxima occurring above 400 °C. Each of the peaks emits similar emission spectra characterized by a band with a maximum near 720 nm and 0.39 eV full width at half-maximum. Following x irradiation at room temperature, the sample exhibits well-known photoluminescence, but after heating to 400 °C, the loss of hydrogen renders the sample nonphotoluminescent. However, thermally stimulated luminescence can be repeatedly induced. Observation of thermally stimulated luminescence is unambiguous evidence for the existence of an insulating surface layer on porous silicon. © 1997 American Institute of Physics.
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78.60.Kn Thermoluminescence
78.66.Db Elemental semiconductors and insulators
78.55.Mb Porous materials
61.80.Cb X-ray effects

Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs

M. Kotani, M. Zafar Iqbal, Y. Makita, R. Morton, and S. S. Lau

Appl. Phys. Lett. 70, 3597 (1997); http://dx.doi.org/10.1063/1.119244 (3 pages) | Cited 1 time

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Photoluminescence spectroscopy is used to investigate some of the recently reported effects of implantation dose and dose rate on the electrical activation of Si dopant in GaAs. Two new luminescence bands are observed to emerge in our spectra with the increasing Si dose at doses ( ∼ 2×1013 cm−2) where the carrier concentration is known to saturate. The higher energy band at the ∼ 840–880 nm wavelength shows a more pronounced rise in strength with increase in dose rate from 3 nA/cm2 beam current density to 60 nA/cm2. The deep-level luminescence band extending from ∼ 1000 to ∼ 1600 nm wavelength dominates the spectra for both the low-dose-rate and high-dose-rate samples above a dose of ∼ 2×1013 cm−2. The observed rapid generation of type-I dislocations above this dose suggests this band is related to some impurity Cottrell atmospheres around the dislocations in GaAs. © 1997 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

Carbon doping and etching of AlxGa1−xAs (0 ⩽ x ⩽ 1) with carbon tetrachloride in metalorganic vapor phase epitaxy

H. Q. Hou

Appl. Phys. Lett. 70, 3600 (1997); http://dx.doi.org/10.1063/1.119245 (3 pages) | Cited 4 times

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Carbon doping and the parasitic growth-rate reduction with carbon-tetrachloride (CCl4) in AlxGa1−xAs was studied in the entire Al composition range for metalorganic vapor phase epitaxial growth. The doping efficiency in AlGaAs was found to increase by two orders of magnitude when the Al composition in AlxGa1−xAs changed from 0 to 1. The parasitic growth rate reduction, however, decreased by a factor of 15 when x changed from 0 to 1. This reduction of growth rate was confirmed to be caused by the etching of the material from the surface by Cl radicals cracked from CCl4. This strong compositional selectivity of the doping and etching has potential implications for lateral definition of growth on patterned surfaces. The doping and etching behaviors were also studied as a function of the growth temperature. © 1997 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.uj III-V and II-VI semiconductors

Overdamped Josephson junctions with Nb/AlOx/Al/AlOx/Nb structure for integrated circuit application

Masaaki Maezawa and Akira Shoji

Appl. Phys. Lett. 70, 3603 (1997); http://dx.doi.org/10.1063/1.119246 (3 pages) | Cited 40 times

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We present characteristics of overdamped Josephson junctions consisting of Nb/AlOx/Al/ AlOx/Nb structures. The junctions were fabricated using a well-developed Nb/AlOx/Nb-junction technology and showed well-defined Josephson characteristics at 4.2 K. The characteristic voltage Vc [the product of the critical current Ic and the effective normal resistance Rn(eff)] of junctions, which determines high-frequency performance of the junction, was in the range of 0.1–0.5 mV, and the critical current density Jc in the range of 102–104 A/cm2. Maximum-to-minimum variations in Ic over a wafer were ±4% for junctions with Vc = 0.15 mV and ±13% for junctions with Vc = 0.5 mV. © 1997 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.Fk Multilayers, superlattices, heterostructures
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits

Domain-orientation dependence of levitation force in seeded melt grown single-domain YBa2Cu3Ox

Donglu Shi, D. Qu, S. Sagar, and K. Lahiri

Appl. Phys. Lett. 70, 3606 (1997); http://dx.doi.org/10.1063/1.119247 (3 pages) | Cited 18 times

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Domain-orientation dependence of levitation force has been determined for single-domain YBa2Cu3Ox. The single-domain material is obtained from a seeded melt growth process. The levitation force has been found to reach a maximum as the c axis of the domain is parallel to the direction of the force. The levitation force decreases in a cosine law fashion as the angle θ (the angle between the direction of the force and the c axis) increases from 0° to 60°. A maximum anisotropy of levitation force of 2.29 has been found. A physical model is proposed to explain the observed orientation dependence. © 1997 American Institute of Physics.
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84.71.Ba Superconducting magnets; magnetic levitation devices
74.72.-h Cuprate superconductors
74.25.Ha Magnetic properties including vortex structures and related phenomena

Critical change of magnetoresistance with bandwidth and doping in perovskite manganites

Y. Tomioka, H. Kuwahara, A. Asamitsu, M. Kasai, and Y. Tokura

Appl. Phys. Lett. 70, 3609 (1997); http://dx.doi.org/10.1063/1.119248 (3 pages) | Cited 60 times

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To explore the optimized colossal magnetoresistance (MR), i.e., higher MR with lower field, magnetotransport properties of single-crystalline perovskite manganites have systematically been investigated. Near x = 1/2 with intrinsic instability of charge ordering (a 1/1 ordering of Mn3+/Mn4+), the one-electron bandwidth (W) is varied by reducing the radius of R-site cation in R1−xSrxMnO3. For R=Nd, the MR behavior is rather canonical, while for R=Sm, the field-induced nonmetal-to-metal transition of the first order shows up accompanying a change in resistivity by several orders of magnitude as a result of an enhanced antiferromagnetic interaction. © 1997 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
71.30.+h Metal-insulator transitions and other electronic transitions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
72.15.Gd Galvanomagnetic and other magnetotransport effects

Quantitative analysis of magnetization reversal based on time-dependent domain patterns

Sug-Bong Choe and Sung-Chul Shin

Appl. Phys. Lett. 70, 3612 (1997); http://dx.doi.org/10.1063/1.119249 (3 pages) | Cited 26 times

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A method to simultaneously determine both the wall-motion speed and the nucleation probability of magnetic films is presented, where the domain reversal patterns are modelized by time-dependent circular domains formed by the nucleation process and then, expanded by the wall-motion process. The present method has been applied to understand the contrasting reversal behaviors in the Co/Pd multilayered system and the difference in the nucleation probabilities of the samples was found to be a major origin for the observed contrasting behaviors in this system. © 1997 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Lr Magnetic aftereffects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Reduction mechanism of surface oxide in aluminum alloy powders containing magnesium studied by x-ray photoelectron spectroscopy using synchrotron radiation

Atsushi Kimura, Masahiro Shibata, Katsuyoshi Kondoh, Yoshinobu Takeda, Makoto Katayama, Tomohiko Kanie, and Hiroshi Takada

Appl. Phys. Lett. 70, 3615 (1997); http://dx.doi.org/10.1063/1.119250 (3 pages) | Cited 13 times

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We investigated the reduction mechanism of surface oxide on aluminum alloy powders containing magnesium, by x-ray photoelectron spectroscopy using synchrotron radiation (SR-XPS). The reduction is the initial reaction in a new aluminum nitridation method developed by one of the authors. In heating the powders to 823 K, magnesium soluted in the powders moves from the inner region to the surface at temperatures below 573 K, and finally, above 773 K, the magnesium reduces the aluminum oxide of powder surfaces by chemical reaction, which breaks the surface oxide films, and metallic aluminum appears on the topmost surface of the powders. These results suggest that the SR-XPS system is very useful for dynamic chemical reaction analysis of the surface via in situ measurement. © 1997 American Institute of Physics.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
79.60.Dp Adsorbed layers and thin films
FREE

Comment on “Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes” [Appl. Phys. Lett. 69, 1975 (1996)]

Andrew N. Farley

Appl. Phys. Lett. 70, 3618 (1997); http://dx.doi.org/10.1063/1.119251 (1 page) | Cited 1 time

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Abstract Unavailable
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.25.+i Surface conductivity and carrier phenomena
FREE

Response to “Comment on ‘Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes’ ” [Appl. Phys. Lett. 70, 3618 (1996)]

F. Houzé, R. Meyer, O. Schneegans, and L. Boyer

Appl. Phys. Lett. 70, 3619 (1997); http://dx.doi.org/10.1063/1.119257 (1 page) | Cited 1 time

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Abstract Unavailable
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.25.+i Surface conductivity and carrier phenomena
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