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20 Jan 1997

Volume 70, Issue 3, pp. 277-401

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Repetition rate dependence of gray-tracking in KTiOPO4 during second-harmonic generation at 532 nm

J. P. Fève, B. Boulanger, G. Marnier, and H. Albrecht

Appl. Phys. Lett. 70, 277 (1997); http://dx.doi.org/10.1063/1.118391 (3 pages) | Cited 15 times

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The aim of this work is to study gray tracking during type II second-harmonic-generation 1064→532 nm in halide flux grown KTiOPO4 crystals. The repetition rate of the laser varies from 1 to 20 kHz. We experimentally demonstrate that the gray-tracking threshold, expressed by the harmonic peak power density, is a decreasing exponential function of the Q-switch frequency. The corresponding 532 nm average power density, however, remains constant. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.70.Mp Nonlinear optical crystals

Laser diodes based on beryllium-chalcogenides

A. Waag, F. Fischer, K. Schüll, T. Baron, H.-J. Lugauer, Th. Litz, U. Zehnder, W. Ossau, T. Gerhard, M. Keim, G. Reuscher, and G. Landwehr

Appl. Phys. Lett. 70, 280 (1997); http://dx.doi.org/10.1063/1.118422 (3 pages) | Cited 74 times

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Beryllium chalcogenides have a much higher degree of covalency than other II–VI compounds. Be containing ZnSe based mixed crystals show a significant lattice hardening effect. In addition, they introduce substantial additional degrees of freedom for the design of wide gap II–VI heterostructures due to their band gaps, lattice constants, and doping behavior. Therefore, these compounds seem to be very interesting materials for short wavelength laser diodes. Here, we report on the first fabrication of laser diodes based on the wide band gap II–VI semiconductor compound BeMgZnSe. The laser diodes emit at a wavelength of 507 nm under pulsed current injection at 77 K, with a threshold current of 80 mA, corresponding to 240 A/cm2. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Hf II-VI semiconductors

Blue light second harmonic generation in the organic crystal ortho-Dicyanovinyl-anisole

Carl H. Grossman, Samuel Schulhofer-Wohl, and Erik R. Thoen

Appl. Phys. Lett. 70, 283 (1997); http://dx.doi.org/10.1063/1.118393 (3 pages) | Cited 1 time

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Type I phase matched second harmonic generation (SHG) in the organic crystal ortho-Dicyanovinyl-anisole (DIVA) has been measured for a range of near infrared fundamental wavelengths (855–960 nm). Turning curves for type I phase matched SHG were derived from measured refractive index values and show noncritical phase matching at 860. Measured type I phase matched SHG is in close agreement with the calculated results and gives effective SHG coefficients ranging from 1.9 to 5.9 times as large as d32 of potassium niobate. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Analysis of transfer function of metal-semiconductor-metal photodetector equivalent circuit

Dejan M. Gvozdić

Appl. Phys. Lett. 70, 286 (1997); http://dx.doi.org/10.1063/1.118394 (3 pages) | Cited 3 times

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The response of GaAs metal-semiconductor-metal photodetectors (MSM-PD) is simulated using a phenomenological model of transport equations, which takes into account the electron intervalley transfer. Calculations are performed for intrinsic devices with 1 μm and 0.5 μm interdigital spacing with the corresponding equivalent (parasitic) circuit of the photodetector. It is pointed out that parasitic effects may induce a significant distortion, a delay of intrinsic response, and increase bit error rate. Analysis of the equivalent or parasitic circuit of the MSM-PD transfer function shows that the distortion and delay of the intrinsic signal can be minimized by choosing the optimal photodetector capacitance. © 1997 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
73.40.Sx Metal-semiconductor-metal structures

Optical properties of two-dimensional photonic crystals with graphite structure

D. Cassagne, C. Jouanin, and D. Bertho

Appl. Phys. Lett. 70, 289 (1997); http://dx.doi.org/10.1063/1.118395 (3 pages) | Cited 13 times

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We present a study of the transmission coefficients of two-dimensional photonic band gap materials consisting of dielectric cylinders in graphite arrangement. By the study of the attenuation versus slab thickness, we determine the most efficient graphite configuration. We show how uncoupled modes create opaque regions for plane waves propagating along the Γ-P direction and widen the gap originating from the existence of forbidden photonic bands. Our results demonstrate that graphite structure is a promising geometry yielding an attenuation as strong as triangular structure with greater convenience in the fabrication at the submicronic scale. © 1997 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.25.Bs Wave propagation, transmission and absorption
78.20.Bh Theory, models, and numerical simulation

Stable photorefractive memory effect in sol-gel materials

B. Darracq, M. Canva, F. Chaput, J.-P. Boilot, D. Riehl, Y. Lévy, and A. Brun

Appl. Phys. Lett. 70, 292 (1997); http://dx.doi.org/10.1063/1.118396 (3 pages) | Cited 20 times

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We report on the synthesis and the optical characterization of a photorefractive sol-gel material which contains nonlinear azo chromophore and carbazole charge transporting molecules. Both of these functional groups are covalently attached to the silica based backbone. Thin sol-gel films exhibit stable optically nonlinear properties: the electro-optic coefficient r13 measured at 633 nm is found to be 17 pm/V one day after corona poling and 15 pm/V after three weeks and over a period of several months. Photorefractivity is demonstrated by two beam coupling experiments without external applied electric field. Sol-gel films present a stable photorefractive memory effect with a net internal gain of 200 cm−1. © 1997 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands

E. S. Kim, N. Usami, and Y. Shiraki

Appl. Phys. Lett. 70, 295 (1997); http://dx.doi.org/10.1063/1.118397 (3 pages) | Cited 9 times

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Strain effects in a strained SiGe/Si quantum well induced by self-assembled Ge islands have been studied by varying the Ge coverage. The strain by the Ge islands induces a complicated behavior in photoluminescence spectra depending on the Ge coverage. The Ge islands give the enhanced local strain to the underlying structures with the increase of the Ge coverage, at the early stage of the growth. However, as the Ge coverage increases the enhanced local strain does not continue being reinforced but is limited after once being retrogressed. These results are discussed in terms of elastic deformation due to the lattice mismatch between Si and Ge and the lattice relaxation in Ge islands. © 1997 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Blue photo- and electroluminescence from poly(benzoyl-1,4-phenylene)

A. Edwards, S. Blumstengel, I. Sokolik, R. Dorsinville, H. Yun, T. K. Kwei, and Y. Okamoto

Appl. Phys. Lett. 70, 298 (1997); http://dx.doi.org/10.1063/1.118398 (3 pages) | Cited 18 times

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Optical and electroluminescent properties of a new poly(p-phenylene)-type polymer, poly(benzoyl-1, 4-phenylene) (PBP) were studied. PBP is soluble in common organic solvents, has high thermal stability and shows bright blue photoluminescence. Light-emitting diodes fabricated with PBP as the active layer emit blue electroluminescence with a peak wavelength at 446 nm and a brightness of about 100 cd/m2. © 1997 American Institute of Physics.
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78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Photoluminescence and photostimulated luminescence of BaFBr:Eu 2+,Eu3+

Wei Chen and Mianzeng Su

Appl. Phys. Lett. 70, 301 (1997); http://dx.doi.org/10.1063/1.118204 (2 pages) | Cited 3 times

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In the photoluminescence (PL) of BaFBr:Eu2+,Eu3+, the emissions of Eu2+, carrier electron-hole (e-h) recombination, and Eu3+ are observed, while in the photostimulated luminescence (PSL) only the emission of Eu2+ is exhibited. This disappearance of e-h recombination in PSL is considered to be caused by carrier migration during photo-stimulation. © 1997 American Institute of Physics.
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78.55.Fv Solid alkali halides
78.60.-b Other luminescence and radiative recombination
61.80.Cb X-ray effects

High gain-bandwidth-product silicon heterointerface photodetector

Aaron R. Hawkins, Weishu Wu, Patrick Abraham, Klaus Streubel, and John E. Bowers

Appl. Phys. Lett. 70, 303 (1997); http://dx.doi.org/10.1063/1.118399 (3 pages) | Cited 30 times

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We report the fabrication of a near-infrared avalanche photodetector with a gain-bandwidth product of over 300 GHz. The detector uses a Si multiplication layer and an InGaAs absorption layer. A 3 dB bandwidth of over 9 GHz was measured for current gains as high as 35. Photocurrent measurements using 1.3 μm light indicate a quantum efficiency for the detector of 0.60, near the limit expected based on the absorber thickness. © 1997 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Noise in wavelength conversion using four-wave mixing in semiconductor optical amplifiers

F. Martelli, A. Mecozzi, A. D’Ottavi, S. Scotti, P. Spano, R. Dall’Ara, J. Eckner, and G. Guekos

Appl. Phys. Lett. 70, 306 (1997); http://dx.doi.org/10.1063/1.118400 (3 pages) | Cited 8 times

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We measure the pump power dependence of efficiency and signal-to-background ratio in wavelength conversion using four-wave mixing in semiconductor optical amplifiers, for different lengths of the device. We show that the efficiency for a 1-mm-long amplifier is about 40 dB larger and the signal-to-noise ratio is about 23 dB larger than for a 0.25 mm amplifier. We also show that, unlike the efficiency, for constant ratio between pump- and signal-power, the signal-to-background ratio monotonically increases with the pump power. We show theoretically that this behavior holds for any range of pump-power values. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Nv Optical frequency converters

Normal-mode theory of nonspecular phenomena for a finite-aperture ultrasonic beam reflected from layered media

X. Jia

Appl. Phys. Lett. 70, 309 (1997); http://dx.doi.org/10.1063/1.118401 (3 pages) | Cited 2 times

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A normal-mode formalism is developed to describe the nonspecular effects of a finite-aperture ultrasonic beam incident onto layered elastic media. Analytical expressions for the reflected field have been obtained for various structures. This model proposed a unique physical picture and resolved the conflict between various explanations made for the nonspecular reflection phenomena. Novel features of leaky wave fields were observed at interfaces of liquid-solid and liquid-solid-liquid structures. These results may be helpful for nondestructive evaluation of layered structures and determination of material signatures in the acoustic microscope. © 1997 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing

Application of a picosecond soft x-ray source to time-resolved plasma dynamics

J. Workman, M. Nantel, A. Maksimchuk, and D. Umstadter

Appl. Phys. Lett. 70, 312 (1997); http://dx.doi.org/10.1063/1.118392 (3 pages) | Cited 33 times

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We demonstrate the application of an ultrashort x-ray source as an external probe to measure plasma dynamics. The plasma is generated by a 100-fs Ti:sapphire laser focused onto thin metallic films. Time-resolved spectroscopy of the gold x-ray probe transmission through a perturbed 1000 Å aluminum film reveals redshifts of the L-shell photoabsorption edge. We show that the dynamic behavior of this shift is consistent with the relaxation of the aluminum following the compression generated by a shock wave traveling through the film. An analytic plasma model, with comparison to a numerical hydrodynamics model, indicates compression up to 1.4 times solid density. © 1997 American Institute of Physics.
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78.70.Dm X-ray absorption spectra
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.La X-ray and γ-ray measurements

Observation of a hexagonal BN surface layer on the cubic BN film grown by dual ion beam sputter deposition

K. S. Park, D. Y. Lee, K. J. Kim, and D. W. Moon

Appl. Phys. Lett. 70, 315 (1997); http://dx.doi.org/10.1063/1.118402 (3 pages) | Cited 22 times

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Cubic-boron nitride (c-BN) thin films were grown by dual ion beam sputter deposition and the growth mechanism was studied using angle resolved in-situ XPS (x-ray photoelectron spectroscopy) analysis. The π bond shake-up satellite of the B 1s peak, which is observed only in a hexagonal boron nitride (h-BN) phase, appeared in the XPS spectrum obtained for the surface layer of the c-BN film. This can be a clear evidence that the c-BN phase grows via the transformation of an initially formed h-BN phase and the transformation is induced by the compressive stress accumulated in the subsurface region during ion bombardment. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
79.60.Dp Adsorbed layers and thin films

Curved crystal lattice in resolidified submicron Al lines

M. J. C. van den Homberg, P. F. A. Alkemade, S. Radelaar, J. L. Hurd, and A. G. Dirks

Appl. Phys. Lett. 70, 318 (1997); http://dx.doi.org/10.1063/1.118403 (3 pages) | Cited 6 times

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The microstructure of Al lines resolidified in an amorphous groove pattern, is investigated by backscatter Kikuchi diffraction, x-ray diffraction, and transmission electron microscopy (TEM). If a temperature gradient is present during cooling, the Al lines do not have the common (111) fiber texture. Instead, the (111) crystal planes are parallel to the vertical sidewalls of the grooves and the crystal lattice shows a remarkable, constant curvature over the entire line length of 1 cm. TEM revealed parallel dislocations in the bulk of the line and small crystallites at the interfaces. It is suggested that the (111) sidewall texture is a consequence of the sidewall area being larger than the bottom area. The observed lattice curvature is explained by a nonisotropic movement of dislocations during cooling. © 1997 American Institute of Physics.
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61.72.Dd Experimental determination of defects by diffraction and scattering
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Dielectric properties of strained (Sr,Ca)TiO3/(Ba,Sr)TiO3 artificial lattices

Hitoshi Tabata and Tomoji Kawai

Appl. Phys. Lett. 70, 321 (1997); http://dx.doi.org/10.1063/1.118202 (3 pages) | Cited 89 times

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Dielectric superlattices of (Sr,Ca)TiO3/(Ba,Sr)TiO3 have been formed by a pulsed laser ablation technique. The crystal structure is controlled with atomic order accuracy and a large lattice stress of 0.5–1 GPa can be introduced periodically at the interfaces owing to the lattice mismatch of the constituent layers. The (Sr0.3Ba0.7)TiO3/(Sr0.48Ca0.52)TiO3 superlattice shows dramatically large dielectric constant of 900 even at film thickness of 500 Å. The optimum pressure for inducing tetragonality in the (Ba,Sr)TiO3 layers and enhanced dielectric properties occurs at a lattice mismatch of 2.5–3%. © 1997 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Fg Pulsed laser ablation deposition

Determination of the activation energy for the heterogeneous nucleation of misfit dislocations in Si1−xGex/Si deposited by selective epitaxy

S. Wickenhäuser, L. Vescan, K. Schmidt, and H. Lüth

Appl. Phys. Lett. 70, 324 (1997); http://dx.doi.org/10.1063/1.118404 (3 pages) | Cited 8 times

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Si0.84Ge0.16/Si heterostructures with variable finite lateral dimensions (10–300 μm) and different layer thicknesses grown by selective low pressure chemical vapor deposition epitaxy at a temperature of 700 °C were investigated with regard to relaxation by formation of misfit dislocations. While in small structures only nucleation and propagation occur, the dislocation–dislocation interaction (mainly multiplication) becomes more and more important in larger structures. Therefore it was possible to separate the three different mechanisms which play a role in relaxation, i.e., nucleation, propagation, and multiplication, and to study them independently. From the analysis of the misfit dislocations at the initial stage of relaxation it was possible to determine the nucleation site density and an activation energy of 2.8 eV for the heterogeneous nucleation of misfit dislocations. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Lk Linear defects: dislocations, disclinations
81.05.Cy Elemental semiconductors

Oxide precipitation at silicon grain boundaries

E. Schroer, S. Hopfe, P. Werner, U. Gösele, G. Duscher, M. Rühle, and T. Y. Tan

Appl. Phys. Lett. 70, 327 (1997); http://dx.doi.org/10.1063/1.118405 (3 pages) | Cited 4 times

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Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
81.30.Mh Solid-phase precipitation

Ballistic electron emission microscopy study of transport in GaN thin films

E. G. Brazel, M. A. Chin, V. Narayanamurti, D. Kapolnek, E. J. Tarsa, and S. P. DenBaars

Appl. Phys. Lett. 70, 330 (1997); http://dx.doi.org/10.1063/1.118406 (3 pages) | Cited 15 times

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Ballistic electron emission microscopy (BEEM) measurements on GaN grown on sapphire substrates reveal a second conduction band minimum ∼340 meV above the absolute band minimum at the zone center (Γ point). A significant lateral variation of the energy difference between the two band minima, ±50 meV, was observed which may result from nonuniform strain in the material. The existence of two conduction bands in close proximity may affect device applications, i.e., GaN based lasers and electronic devices. © 1997 American Institute of Physics.
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73.23.Ad Ballistic transport
07.79.-v Scanning probe microscopes and components
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures

Hiroshi Fukuda, J. L. Hoyt, M. A. McCord, and R. F. W. Pease

Appl. Phys. Lett. 70, 333 (1997); http://dx.doi.org/10.1063/1.118387 (3 pages) | Cited 10 times

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A new approach to three-dimensional nanostructures is discussed with the goal of fabricating vertical, ultrasmall tunneling junctions suitable for single electron devices. Pillars consisting of multiple layers of polycrystalline silicon (polysilicon) (∼10 nm thick) and silicon nitride (∼2 nm thick) were laterally oxidized. The fabrication of vertically stacked silicon nanoislands, with dimensions on the order of 10 nm in all three directions, connected by thin silicon nitride layers, is demonstrated. The saturation of the polysilicon core diameter during the lateral pillar oxidation process is clearly observed, confirming the self-limiting effect for polysilicon pillars. This approach allows the fabrication of three-dimensional nanostructures using conventional silicon processing equipment. © 1997 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.35.Gv Single electron devices

Ordering of As impurities in a Si dislocation core

A. Maiti, T. Kaplan, M. Mostoller, M. F. Chisholm, S. J. Pennycook, and S. T. Pantelides

Appl. Phys. Lett. 70, 336 (1997); http://dx.doi.org/10.1063/1.118407 (3 pages) | Cited 12 times

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We demonstrate by ab initio calculations that segregation of As in a dislocation core in Si occurs in the form of an ordered chain of As atoms running along the dislocation pipe. All As atoms in the chain achieve threefold coordination and the segregation energy is close to 1 eV per As atom. © 1997 American Institute of Physics.
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61.72.Bb Theories and models of crystal defects
61.72.Lk Linear defects: dislocations, disclinations
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Lm Deformation, plasticity, and creep

A thin film diamond p-channel field-effect transistor

Lisa Y. S. Pang, Simon S. M. Chan, Richard B. Jackman, Colin Johnston, and Paul R. Chalker

Appl. Phys. Lett. 70, 339 (1997); http://dx.doi.org/10.1063/1.118408 (3 pages) | Cited 12 times

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A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °C displaying pinch off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS/mm has been measured, the highest reported value to date for this type of device. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors

Excimer laser crystallization and doping of silicon films on plastic substrates

P. M. Smith, P. G. Carey, and T. W. Sigmon

Appl. Phys. Lett. 70, 342 (1997); http://dx.doi.org/10.1063/1.118409 (3 pages) | Cited 83 times

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We report the pulsed laser recrystallization and doping of thin film amorphous silicon deposited on oxide-coated polyester substrates. Although our heat-flow simulation of the laser recrystallization process indicates that the plastic is briefly subjected to temperatures above its softening point, we see no evidence of damage to the plastic or film delamination from the substrate. Film grain size is found to vary up to ∼0.1 μm. Electrical characteristics obtained from simple strip line resistors and thin film transistors indicate that device-quality silicon films have been produced on an inexpensive flexible plastic substrate. © 1997 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
64.70.K- Solid-solid transitions
81.05.Gc Amorphous semiconductors
81.40.Wx Radiation treatment (particle and electromagnetic)

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

G. Yusa and H. Sakaki

Appl. Phys. Lett. 70, 345 (1997); http://dx.doi.org/10.1063/1.119068 (3 pages) | Cited 118 times

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The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested. © 1997 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Pz Photoconduction and photovoltaic effects
85.30.Tv Field effect devices

Nanosecond time-resolved emission spectroscopy from silicon implanted and annealed SiO2 layers

A. Pifferi, P. Taroni, A. Torricelli, G. Valentini, P. Mutti, G. Ghislotti, and L. Zanghieri

Appl. Phys. Lett. 70, 348 (1997); http://dx.doi.org/10.1063/1.118410 (3 pages) | Cited 16 times

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Photoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. Different ion fluences and annealing times were tested. Three components emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were detected. The peak position of all components moves to longer wavelengths upon increasing the ion fluence. This short-wavelength emission seems to be related to the presence of extended defects acting as precursors of nanocrystals. A slower (microsecond) component, centered in the near infrared and attributed to nanocrystals, was also identified in the highest fluence implant considered (3×1017 cm−2). © 1997 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
78.47.-p Spectroscopy of solid state dynamics
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