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3 Feb 1997

Volume 70, Issue 5, pp. 535-672

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Activation energy of nonradiative processes in degraded II–VI laser diodes

L.-L. Chao, G. S. Cargill, C. Kothandaraman, T. Marshall, E. Snoeks, M. Buijs, K. Haberern, J. Petruzzello, G. M. Haugen, and K. K. Law

Appl. Phys. Lett. 70, 535 (1997); http://dx.doi.org/10.1063/1.119261 (3 pages) | Cited 7 times

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A spatially resolved cathodoluminescence study of 〈100〉 dark line defects (DLDs) of degraded II–VI laser diodes based on a ZnCdSe/ZnMgSSe separate confinement heterostructure has been carried out at temperatures between room temperature and 8 K. Cathodoluminescence line scans were used to measure the change of contrasts between the DLDs and the adjacent material. The contrast decreased with decreasing temperature, which suggests that the nonradiative recombination processes associated with DLDs are thermally activated. Activation energies were found to be about 16 and 6 meV for temperatures above and below 200 K, respectively, which may reflect a transition between free carriers and bound excitons at this temperature. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.60.Hk Cathodoluminescence, ionoluminescence
42.70.Hj Laser materials

Enhanced electro-optic coefficient of nonlinear optical polymer using liquid contact poling

Huajun Tang, John M. Taboada, Guohua Cao, Liqiang Li, and Ray T. Chen

Appl. Phys. Lett. 70, 538 (1997); http://dx.doi.org/10.1063/1.118333 (3 pages) | Cited 6 times

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The value of electro-optic coefficient r33 of an electro-optic (EO) polymer film depends on the polarization density achieved after the electric poling process. In this letter, we report a high temperature liquid contact poling method which provides a poling field as high as 250 V/μm in LD-3 EO polymer film with less surface damages. The r33 value was measured to be 18 pm/V at 633 nm which is 40°/V higher than the previous reported datum. Such a high poling field and therefore larger r33 value are not achievable through either contact poling or corona poling. © 1997 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds

X-ray absorption fine structure determination of the local environment of Er3+ in glass

P. M. Peters and S. N. Houde-Walter

Appl. Phys. Lett. 70, 541 (1997); http://dx.doi.org/10.1063/1.118334 (3 pages) | Cited 30 times

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Erbium LIII-edge x-ray absorption fine structure (XAFS) and 4I13/2 excited state lifetime measurements were performed on aluminosilicate, fluorosilicate, and phosphate glasses with varying erbium concentration. The local erbium environment is shown to be unique in each host. In the aluminosilicate, erbium is found to have 6.4 nearest oxygen neighbors at a distance of 2.22 Å and with a Debye–Waller factor of 0.031 Å2. Erbium in the fluorosilicate glass was found to be more highly coordinated with 7.5 nearest neighbor anions. Erbium in the phosphate glass is found to have a smaller disorder factor of 0.021 Å2 when compared with the silicate glasses. No variation of the environment (3 shells) is observed with changes in rare earth concentration, while the excited state lifetime varies from 1.0 to 9.8 ms in the aluminosilicates, suggesting the absence of erbium clustering at XAFS detectable distances. © 1997 American Institute of Physics.
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42.70.Hj Laser materials
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.43.Fs Glasses

Structure and properties of a complex crystal for laser diode frequency doubling: Cadmium mercury thiocyanate

Duorong Yuan, Dong Xu, Mingguo Liu, Fang Qi, Wentao Yu, Wenbo Hou, Yonghong Bing, Suoying Sun, and Minhua Jiang

Appl. Phys. Lett. 70, 544 (1997); http://dx.doi.org/10.1063/1.118335 (3 pages) | Cited 26 times

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The crystal structure of cadmium mercury thiocyanate [CdHg(SCN)4] is determined by means of a four circle diffractometer. The structural features and properties of the crystal are described. Blue-violet light output by frequency doubling of a 809 nm GaAlAs laser diode using a cadmium mercury thiocyanate crystal device that is 3 mm thick at the phase matching angle: θ = 47.7°, φ = 0°, is realized at room temperature with input power lower than 200 mW. A 404.5 nm light output power of 1.8 mW is also measured for a 576 mW input power of the GaAlAs laser diode. © 1997 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.05.cp X-ray diffraction

Low threshold continuously tunable vertical-cavity surface-emitting lasers with 19.1 nm wavelength range

Fred Sugihwo, Michael C. Larson, and J. S. Harris

Appl. Phys. Lett. 70, 547 (1997); http://dx.doi.org/10.1063/1.119264 (3 pages) | Cited 16 times

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Continuous wavelength tuning of 19.1 nm is reported for vertical-cavity surface-emitting lasers. Stress-matched dielectric mirror stacks are added to the micromachined deformable-membrane top mirror to enhance reflectance, resulting in devices with 6.5% quantum efficiency and threshold current as low as 0.34 mA. The laser operates in single mode near 968 nm with 24 dB mode suppression ratio and tuning voltages are below 18 V. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Pk Continuous operation
42.60.Fc Modulation, tuning, and mode locking

Formation of pseudo one-dimensional photonic band in visible region by grating pair method

Kenji Todori and Shuzi Hayase

Appl. Phys. Lett. 70, 550 (1997); http://dx.doi.org/10.1063/1.118206 (3 pages) | Cited 2 times

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We have succeeded in fabricating a pseudo one-dimensional photonic band system in the visible region using two facing gratings. The transmittance spectra of 3600 and 1800 grooves/mm grating pairs were measured. The results, along with calculations of one-dimensional photonic bands, show that a photonic band exists and the band edges are near 530 THz. © 1997 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings

Calculation of temperature dependent threshold current density of ZnCdSe/ZnSe quantum well laser including many body effects

A. Bandyopadhyay and P. K. Basu

Appl. Phys. Lett. 70, 553 (1997); http://dx.doi.org/10.1063/1.118336 (3 pages) | Cited 1 time

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We have calculated the threshold current density of the ZnCdSe/ZnSe quantum well laser as a function of temperature by incorporating many body Coulomb interactions, both the heavy- and light hole subbands, as well as the temperature and energy dependencies of linewidth for laser transition. The effect of finite well width and well depth in the Coulomb interaction is also considered instead of taking strictly two-dimensional Coulomb potential. The calculated values of nominal threshold current density are 1.5 times larger than the values calculated without considering Coulomb interaction, whereas calculations using strictly two-dimensional Coulomb potential show 7% overestimation. Good agreement is obtained between the reported experimental results and the theoretical threshold current densities for a Zn0.83Cd0.17Se/ZnSe multiple quantum well laser assuming a value of 0.8 for the internal quantum efficiency. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Suppressed angular color dispersion in planar microcavities

N. Tessler, S. Burns, H. Becker, and R. H. Friend

Appl. Phys. Lett. 70, 556 (1997); http://dx.doi.org/10.1063/1.118207 (3 pages) | Cited 19 times

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We report an improved microcavity design which allows the suppression of the viewing angle dependence of the color emitted by a planar device. This is demonstrated for luminescent conjugated polymer based cavities, for which the wavelength change is reduced from ∼60 to 10 nm at an angle of 60°. We introduce the concept of cavity optical length dispersion and suggest structures for which the wavelength change with viewing angle is reduced to 5 nm at a viewing angle of 60° irrespective of the emissive material. © 1997 American Institute of Physics.
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42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Generation of coherent terahertz radiation by photomixing in dipole photoconductive antennas

Shuji Matsuura, Masahiko Tani, and Kiyomi Sakai

Appl. Phys. Lett. 70, 559 (1997); http://dx.doi.org/10.1063/1.118337 (3 pages)

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We demonstrate the generation of continuous-wave terahertz radiation at frequencies up to 3.5 THz by photomixing in LT-GaAs photoconductors with printed dipole antennas. The expected resonance peak was clearly observed in the radiation spectrum of a 50 μm dipole antenna, and the radiation property was discussed in terms of the antenna impedance. The spectral bandwidth was greater than the electrical bandwidth of the photoconductor determined by the carrier lifetime of the material. The quality of the resonance, however, was not as high as expected because of the imperfect geometry and ohmic loss of the antenna. © 1997 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
72.40.+w Photoconduction and photovoltaic effects
84.40.Ba Antennas: theory, components and accessories

Blue light emission from an organic nonlinear optical crystal of 4-aminobenzophenone pumped by a laser diode

Zhengdong Li, Baichang Wu, Genbo Su, and Gongfan Huang

Appl. Phys. Lett. 70, 562 (1997); http://dx.doi.org/10.1063/1.118208 (3 pages) | Cited 10 times

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The bulk crystals of 4-aminobenzophenone were grown from organic solution. The refractive indices and nonlinear-optical coefficients deff were measured and were reported. Blue second harmonic emission with wavelength of 433 and 460 nm was observed as pumped by a laser diode, second-harmonic generation and a conversion efficiency of 2.5×10−5 was obtained at 866 nm. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals

Second harmonic generation from beta barium borate (β-BaB2O4) thin films grown by metalorganic chemical vapor deposition

D. B. Studebaker, G. T. Stauf, T. H. Baum, T. J. Marks, H. Zhou, and G. K. Wong

Appl. Phys. Lett. 70, 565 (1997); http://dx.doi.org/10.1063/1.118209 (3 pages) | Cited 13 times

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Thin films of beta barium borate (β-BaB2O4) have been deposited by metalorganic chemical vapor deposition on fused silica, sapphire, platinum, and silicon substrates. Deposition conditions were optimized to reproducibly grow films with the c axis normal to the substrate. Second harmonic generation measurements have been made on selected films. The films grown on fused silica exhibit a maximum χeff(2) of 0.78 pm/V, and on single-crystal sapphire, 1.6 pm/V. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators

Dielectric, pyroelectric, and electro-optic monitoring of the cross-linking process and photoinduced poling of Red Acid Magly

S. Yilmaz, W. Wirges, S. Bauer-Gogonea, S. Bauer, R. Gerhard-Multhaupt, F. Michelotti, E. Toussaere, R. Levenson, J. Liang, and J. Zyss

Appl. Phys. Lett. 70, 568 (1997); http://dx.doi.org/10.1063/1.118277 (3 pages) | Cited 6 times

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Crosslinking of polymers with dipoles can be followed by means of dielectric, pyroelectric, and in situ electro-optic measurements. All three techniques provide similar insights as to the cross-linking process. In addition, electro-optic measurements allow for the determination of the resulting optical nonlinearity. After crosslinking is completed the polymer behaves like a side-chain polymer. In addition, photoinduced poling of an already cross-linked dipolar polymer network is demonstrated. © 1997 American Institute of Physics.
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78.20.Jq Electro-optical effects
77.70.+a Pyroelectric and electrocaloric effects
78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics

Stability of fixed holograms in LiNbO3

L. Arizmendi, A. Méndez, and J. V. Álvarez-Bravo

Appl. Phys. Lett. 70, 571 (1997); http://dx.doi.org/10.1063/1.118278 (3 pages) | Cited 5 times

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The stability of fixed volume phase holograms in lithium niobate is studied. The new measurement method is able to distinguish between electronic compensation and true erasure. It is found that at temperatures in the range of 70–120 °C both electronic thermal detrapping and ionic movement are active effects. The actual lifetime of fixed holograms is determined in this temperature range. From these measurements, we extrapolate a lifetime for the fixed hologram refractive index change of 3.7 years at room temperature. © 1997 American Institute of Physics.
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42.40.Pa Volume holograms
42.70.Ln Holographic recording materials; optical storage media

Surface discharge plasma induced by spontaneous polarization switching

D. Shur, G. Rosenman, and Ya. E. Krasik

Appl. Phys. Lett. 70, 574 (1997); http://dx.doi.org/10.1063/1.118279 (3 pages) | Cited 47 times

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A flashover plasma has been induced by spontaneous polarization switching on a polar surface of the ferroelectric crystal triglycine sulphate (TGS). The effect has not been observed in the paraelectric phase. The threshold switching voltage for a surface flashover ignition was as low as 100 V for pulsed and ac voltage. A mechanism of plasma initiation on a ferroelectric surface is proposed. It is assumed that the plasma is ignited by electron emission initiated by polarization switching. Subsequent electron avalanching occurs as a result of the high potential gradient along the ferroelectric surface caused by inhomogeneous polarization switching. Electrons and ions with energies up to several hundreds of eV were been recorded due to a high surface potential of the switched ferroelectric. © 1997 American Institute of Physics.
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77.80.Fm Switching phenomena
52.80.Vp Discharge in vacuum

Linear arc discharge source for large area plasma processing

L. Bárdoš, H. Baránková, and S. Berg

Appl. Phys. Lett. 70, 577 (1997); http://dx.doi.org/10.1063/1.118210 (3 pages) | Cited 8 times

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A linearly scalable plasma source based on the radio frequency generated hot hollow cathode discharge between two parallel plates with a magnetic field perpendicular to the plates near the outlet of the cathode is introduced. The magnetic field facilitates and confines the hollow cathode discharge which leads to a high power density and a high cathode wall temperature. The geometry and location of hot zones is directly controlled by magnetic field. The linear arc discharge (LAD) source exhibits similar features as the cylindrical radio frequency hollow cathode plasma jet. Experiments indicate a metastable assisted growth of TiN films. LAD source extends abilities of the radio frequency hollow cathode plasma jet to the large area processing. © 1997 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Glass formation in a multicomponent Zr-based alloy by mechanical attrition and liquid undercooling

A. Sagel, R. K. Wunderlich, J. H. Perepezko, and H.-J. Fecht

Appl. Phys. Lett. 70, 580 (1997); http://dx.doi.org/10.1063/1.118280 (3 pages) | Cited 19 times

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The synthesis of a multicomponent Zr60Al10Ni9Cu18Co3 glass by mechanical alloying has been investigated using thermal and structural analysis and compared with a metallic glass produced by liquid undercooling. The solid-state amorphization reaction is preceded by rapid solution of smaller solute atoms in the Zr matrix with a concomitant reduction in grain size to 10 nm at the amorphization onset. A fully amorphous mechanically alloyed sample shows relaxation compared to a sample synthesized by liquid cooling probably due to removal of residual inhomogeneities on the scale of the nanocrystal size at amorphization. While the kinetic pathways for the two synthesis methods differ, the relaxed amorphous phases from each method exhibit identical thermodynamic properties. © 1997 American Institute of Physics.
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61.66.Dk Alloys
61.43.Fs Glasses
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.05.cp X-ray diffraction

Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs

A. Trampert, O. Brandt, H. Yang, and K. H. Ploog

Appl. Phys. Lett. 70, 583 (1997); http://dx.doi.org/10.1063/1.118281 (3 pages) | Cited 27 times

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We report on the direct observation of the initial nucleation and the resulting microstructure of GaN deposited on GaAs(001) by plasma-assisted molecular beam epitaxy. Using high-resolution transmission electron microscopy, we demonstrate that, despite the extreme lattice mismatch between these two materials, GaN nucleates in the metastable cubic phase with a well-defined orientation relationship to the substrate and a sharp heteroboundary. The preference of the metastable phase in the initial stage of growth is discussed in connection with a coincidence lattice for the epitaxy-induced interface structure of the initial GaN nuclei. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Use of oxygen-stabilized C60 films for selective chemical vapor deposition

Sean McGinnis, Lars Norin, Ulf Jansson, and Jan-Otto Carlsson

Appl. Phys. Lett. 70, 586 (1997); http://dx.doi.org/10.1063/1.118282 (3 pages) | Cited 3 times

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Thin C60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in their thermal stability resulted from the simultaneous exposure to the radiation and oxygen. The thermal stability and inertness of these films to tungsten hexaflouride, which is readily reduced by silicon to form the metal at 350 °C, allowed selective deposition of tungsten in both ultrahigh vacuum and low pressure environments. X-ray photoelectron spectroscopy and x-ray fluorescence spectroscopy were used to characterize the tungsten deposited on the C60 mask and the unmasked silicon substrate. © 1997 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Hp Lithography, masks and pattern transfer
61.48.-c Structure of fullerenes and related hollow and planar molecular structures

Scanning electron-acoustic imaging of residual stress distributions in aluminum metal and ZrSiO4 multiphase ceramics

B. Y. Zhang, F. M. Jiang, Y. Shi, Q. R. Yin, and M. L. Qian

Appl. Phys. Lett. 70, 589 (1997); http://dx.doi.org/10.1063/1.118283 (3 pages) | Cited 12 times

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The scanning electron-acoustic imaging technique has been used in the characterization of the residual stress field distributions existing in the subsurface in aluminum disks and 20 vol % SiC ( w)/ZrSiO4 multiphase ceramics left by Vicker’s indentation. The experimental results reveal that the distribution areas are the plastic-elastic interchange zones. The electron-acoustic signal generation mechanism in the samples are discussed. © 1997 American Institute of Physics.
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62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

High-frequency resonance in acoustic superlattice of periodically poledLiTaO3

Yan-Feng Chen, Shi-Ning Zhu, Yong-Yuan Zhu, Nai-Ben Ming, Biao-Bing Jin, and Ri-Xing Wu

Appl. Phys. Lett. 70, 592 (1997); http://dx.doi.org/10.1063/1.118284 (3 pages) | Cited 13 times

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An electric poling method has been used to prepare microstructured LiTaO3 crystals with periodically inverted-ferroelectric domains. By using these crystals as acoustic superlattices, both an “in-line” scheme and a “cross-field” scheme for acoustic excitation have been realized. The experimental results are in good agreement with the theoretical analysis. It is expected that these results may be applied to a bulk-acoustic device operating at a frequency high above 450 MHz. © 1997 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
62.65.+k Acoustical properties of solids
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas

Y. Kadoya, H. Noge, T. Someya, and H. Sakaki

Appl. Phys. Lett. 70, 595 (1997); http://dx.doi.org/10.1063/1.118330 (3 pages) | Cited 2 times

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We have investigated the carrier concentration and mobility of the two-dimensional electron gas (2DEG) in AlGaAs/GaAs selectively doped heterojunction structures that involve oxygen impurities at the heterointerfaces. The oxygen impurities were incorporated during growth interruption of molecular beam epitaxy at the interfaces for several tens of minutes. It is shown that the carrier concentration of the 2DEG does not change for the areal density of the oxygen impurity up to 6×1011 cm−2, but it decreases drastically when the oxygen density exceeds 3×1012 cm−2. In contrast, the decrease of the mobility is observable for a much smaller oxygen density of the order of 1010 cm−2. We show that these influences are well explained by the formation of charged states at the interface. © 1997 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.S- Impurities in crystals

A field effect transistor based on the Mott transition in a molecular layer

C. Zhou, D. M. Newns, J. A. Misewich, and P. C. Pattnaik

Appl. Phys. Lett. 70, 598 (1997); http://dx.doi.org/10.1063/1.118285 (3 pages) | Cited 39 times

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Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low “ON” impedance and high “OFF” impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
71.30.+h Metal-insulator transitions and other electronic transitions
73.40.Rw Metal-insulator-metal structures

Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells

Aleksey D. Andreev and Georgy G. Zegrya

Appl. Phys. Lett. 70, 601 (1997); http://dx.doi.org/10.1063/1.118286 (3 pages) | Cited 18 times

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The effect of strain on thresholdless Auger recombination in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of carriers has been carried out. It is shown that the strain affects both qualitatively and quantitatively the overlap integral between the electron and hole states. The Auger recombination coefficient is calculated for InAlAsSb quantum well and its dependence on quantum well parameters, strain, and temperature is analyzed. © 1997 American Institute of Physics.
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78.20.Bh Theory, models, and numerical simulation
68.60.Dv Thermal stability; thermal effects
42.70.Hj Laser materials

Surfactant effect of atomic H on Si incorporation in GaAs

Zhongling Peng and Yoshiji Horikoshi

Appl. Phys. Lett. 70, 604 (1997); http://dx.doi.org/10.1063/1.118287 (3 pages)

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The effect of atomic H on Si incorporation in GaAs was studied with different substrate orientations in molecular beam epitaxy process. It is found that with the irradiation of atomic H, the changeover As4/Ga flux ratios for the p- to n-type transition in (111)A and (311)A GaAs are shifted to higher values as if the effective surface As pressure is reduced. The Si-doped (100) GaAs grown at the same time shows n-type conductivity with the electrical activation of almost 100%. Photoluminescence measurements for (311)A samples show great influence by atomic H in the self-compensation region. The irradiation of atomic H helps to lessen the degree of self-compensation in the p-type side but seems to aggravate it in the n-type side of the self-compensation region. © 1997 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Fabrication of buried epitaxial CoSi2 layer through selective diffusion

K. Prabhakaran, K. Sumitomo, and T. Ogino

Appl. Phys. Lett. 70, 607 (1997); http://dx.doi.org/10.1063/1.118288 (3 pages) | Cited 7 times

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The incorporation of metallic layers into the bulk of semiconductors is gaining tremendous attention for device applications. This is mainly achieved by ion beam synthesis. In the ultrathin film regime, however, this technique is not practical due to the damage incurred. Here we report a technique by which fabrication of buried epitaxial CoSi2 is achieved by making use of the selective diffusion behavior of Co. Co atoms diffuse through a Ge overlayer on a Si(111) substrate and are terminated by reaction with the Si atoms underneath. Ion scattering as well as high resolution microscopy results confirm that the CoSi2 layer thus formed is in epitaxial form. This method would help in providing functionality to nanostructure based devices. © 1997 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
81.05.Hd Other semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
66.30.J- Diffusion of impurities
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