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10 Feb 1997

Volume 70, Issue 6, pp. 677-787

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Receiver with optical thyristors operating at 155 Mbit/s with 3 femto-Joule optical inputs

G. Bickel, P. Heremans, M. Kuijk, R. Vounckx, and G. Borghs

Appl. Phys. Lett. 70, 750 (1997); http://dx.doi.org/10.1063/1.118269 (3 pages) | Cited 12 times

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A receiver for digital optical inputs is presented which is based on a differential pair of optical thyristors. Modification of the conventional differential pair allows the electrical readout of its ON and OFF states. Optical input pulses with an energy of about 3 femto-Joule (at a wavelength of 830 nm) are sufficiently large for detection. In its present size, the receiver works up to 155 Mbit/s. © 1997 American Institute of Physics.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.Dw Photodiodes; phototransistors; photoresistors
42.82.Ds Interconnects, including holographic interconnects

High-efficiency and high-speed silicon metal–semiconductor–metal photodetectors operating in the infrared

Erli Chen and Stephen Y. Chou

Appl. Phys. Lett. 70, 753 (1997); http://dx.doi.org/10.1063/1.118270 (3 pages) | Cited 11 times

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A silicon metal–semiconductor–metal photodetector with high-efficiency and high-speed in the infrared is reported. The high performance is achieved by using a Si-on-insulator substrate with a patterned nanometer-scale scattering reflector buried underneath a 170-nm-thick Si active layer. This scattering reflector causes light to be trapped inside the thin Si active layer, resulting in a fast and efficient carrier-collection by the electrodes. The impulse response of the photodetector, measured by electro-optic sampling at 780 nm wavelength, has a full width at half-maximum of 5.4 ps, corresponding to a 3-dB bandwidth of 82 GHz. At both 633 and 850 nm wavelengths, the responsivities of the photodetector with the buried backside reflector are at least an order of magnitude larger than those without the reflector. © 1997 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
81.05.Cy Elemental semiconductors

Carrier transport in ordered and disordered In0.53Ga0.47As

R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, and J. M. Olson

Appl. Phys. Lett. 70, 756 (1997); http://dx.doi.org/10.1063/1.118214 (3 pages) | Cited 11 times

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Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In0.53Ga0.47As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley–Read–Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed. © 1997 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy

S. Bhargava, H.-R. Blank, V. Narayanamurti, and H. Kroemer

Appl. Phys. Lett. 70, 759 (1997); http://dx.doi.org/10.1063/1.118271 (3 pages) | Cited 22 times

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Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM’s three-terminal capabilities, collector current–voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AlSb interface. By subtracting the InAs/AlSb conduction-band offset (1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV). © 1997 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
07.79.-v Scanning probe microscopes and components
73.23.Ad Ballistic transport

Accelerated hole transfer by double-layered metallophthalocyanine thin film for effective electroluminescence

Tsuyoshi Tominaga, Kohei Hayashi, and Naoki Toshima

Appl. Phys. Lett. 70, 762 (1997); http://dx.doi.org/10.1063/1.118252 (2 pages) | Cited 15 times

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An electroluminescent device was constructed using tris(8-hydroxyquinoline)aluminum as an emitting layer and metallophthalocyanine as a hole-transfer layer. When the metallophthalocyanine layer is sufficiently thin, the device shows a brightness of more than 1000 cd m−2. The device using double hole-transfer layers of two kinds of metallophthalocyanine exhibits a higher brightness than that using a single hole-transfer layer of the corresponding metallophthalocyanine. This phenomenon is well explained by the accelerated hole transfer in the double layer due to the construction of a “sequential potential field.” © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds

Self-organized superlattice formation in II–IV and III–V semiconductors

Albert-László Barabási

Appl. Phys. Lett. 70, 764 (1997); http://dx.doi.org/10.1063/1.118253 (3 pages) | Cited 12 times

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There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II–VI and III–V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb. © 1997 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Microstructural characterization of solid-phase crystallized amorphous silicon films recrystallized using an excimer laser

G. K. Giust and T. W. Sigmon

Appl. Phys. Lett. 70, 767 (1997); http://dx.doi.org/10.1063/1.118254 (3 pages) | Cited 19 times

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The laser recrystallization of amorphous-silicon films crystallized in a furnace is investigated for single and multipulse laser irradiation. The resulting microstructure is grouped into three regimes, based on their recrystallization mechanism. For the low energy irradiation regime, the grain size in unchanged, however many intragrain defects are removed, while the high energy regime results in homogeneous nucleation of the molten film. A third regime exists between these two, characterized by large lateral grain growth. Except for the low energy regime, we conclude that the results obtained are consistent with those found for the direct laser crystallization of amorphous silicon films. © 1997 American Institute of Physics.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.05.Cy Elemental semiconductors
81.40.Wx Radiation treatment (particle and electromagnetic)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Evidence of a new magnetic flux pining center in Nd1Ba2Cu3Oy single crystals

Wu Ting, T. Egi, K. Kuroda, N. Koshizuka, and S Tanaka

Appl. Phys. Lett. 70, 770 (1997); http://dx.doi.org/10.1063/1.118262 (3 pages) | Cited 54 times

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Highly flat, clean, and stable surfaces of as-prepared Nd1Ba2Cu3Oy (Nd123) single crystals have been studied using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) system. The results of large area STM scans together with the results of STS measurements, magnetization loops measured at several temperatures below Tc, and critical current density measurements reveal the presence of a new magnetic flux pinning center in Nd123 single crystals prepared in a reduced oxygen partial pressure. This pinning center is more conductive on the surface than the matrix and has a size ranging from several to several tens of nanometers as seen by STM. Similar pinning center may be introduced to other high temperature superconductors to increase their critical current densities in an applied magnetic field. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Experimental determination of the absolute temperature modulation in photothermal microscopy of Y1Ba2Cu3O7 crystals

W. R. Studenmund, I. M. Fishman, G. S. Kino, and J. Giapintzakis

Appl. Phys. Lett. 70, 773 (1997); http://dx.doi.org/10.1063/1.118255 (3 pages)

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We present a technique to experimentally determine the value of the temperature perturbation δT in photothermal microscopy. Knowledge of δT is necessary for proper analysis of the differential optical reflectivity (∂R/∂T) data obtained from untwinned Y1Ba2Cu3O7 crystals. We measure δT to be 0.2 K, consistent with previous theoretical predictions from thermal diffusion data. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
05.70.Ce Thermodynamic functions and equations of state

Reduction of interlayer coupling in NiFeCo/Cu/NiFeCo/FeMn spin valve structures by lowering argon sputtering pressure

Chang-Min Park and Kyung Ho Shin

Appl. Phys. Lett. 70, 776 (1997); http://dx.doi.org/10.1063/1.118256 (3 pages) | Cited 6 times

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Sputtered spin valve heterostructures of NiFeCo/Cu/NiFeCo/FeMn were prepared to examine the effect of the argon sputtering pressure on the interlayer coupling between two ferromagnetic layers. The coupling strength was found to be closely related to the argon sputtering pressure. As the argon sputtering pressure is varied from 6 to 1 mTorr, the coupling field is reduced from 13.6 to 0.5 Oe. In particular, the sample deposited at 1 mTorr exhibits a coupling field of 0.5 Oe and a resistance change of 1.7% for the field step of 0.1 Oe leading to a sensitivity as large as 17% Oe. The reduced interlayer coupling is attributed to the modified topography of NiFeCo/Cu/NiFeCo interfaces. Atomic force microscope analyses support the dominant role of a topography-related effect in reducing the interlayer coupling strength. © 1997 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Ss Magnetic recording materials
81.15.Cd Deposition by sputtering

Direct fabrication of microrelief patterns by electron-beam exposure in Ag–As–S glasses

Norimitsu Yoshida and Keiji Tanaka

Appl. Phys. Lett. 70, 779 (1997); http://dx.doi.org/10.1063/1.118257 (3 pages) | Cited 1 time

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Convex relief patterns can be produced in Ag–As–S glasses only by exposure to focused electron beams accelerated at ∼ 10 kV. The lateral size of the patterns is greater than 1 μm and the height increases to ∼ 6 μm. The volume expansion seems to be caused by accumulation of Ag+ ions into exposed regions. © 1997 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
81.05.Kf Glasses (including metallic glasses)
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Ce Glasses, quartz

Single molecule spectroscopy with automated positioning

T. Ha, D. S. Chemla, Th. Enderle, and S. Weiss

Appl. Phys. Lett. 70, 782 (1997); http://dx.doi.org/10.1063/1.118259 (3 pages) | Cited 14 times

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Rapid positioning of single molecules in the excitation volume of a confocal (or near-field) microscope is necessary for the successful spectroscopy of molecules with fluctuating emission properties. A computer controlled optical system which automatically and rapidly locates and performs spectroscopic measurements on single molecules was developed. Examples for such spectroscopies, performed on short-lived molecules, are given. © 1997 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
07.60.-j Optical instruments and equipment
07.79.Fc Near-field scanning optical microscopes
07.05.Dz Control systems

Micro-objective manipulated with optical tweezers

Minoru Sasaki, Tutomu Kurosawa, and Kazuhiro Hane

Appl. Phys. Lett. 70, 785 (1997); http://dx.doi.org/10.1063/1.118260 (3 pages) | Cited 4 times

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A microscope is described that uses a μm-sized ball lens, which is here termed micro-objective, manipulated with optical tweezers to image the side view of the arbitrary region of a sample. Since this micro-objective is small in size, it can go into a concave region to produce a local image of the inside which the conventional microscope cannot observe. Preliminary results show good lens performance from the micro-objective when combined with optical tweezers. © 1997 American Institute of Physics.
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07.60.-j Optical instruments and equipment
42.30.-d Imaging and optical processing
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