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24 Feb 1997

Volume 70, Issue 8, pp. 919-1058

Page 2 of 2 Pages Previous Page | Jump to Page

Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires

W. R. Tribe, M. J. Steer, D. J. Mowbray, M. S. Skolnick, A. N. Forshaw, J. S. Roberts, G. Hill, M. A. Pate, C. R. Whitehouse, and G. M. Williams

Appl. Phys. Lett. 70, 993 (1997); http://dx.doi.org/10.1063/1.118459 (3 pages) | Cited 15 times

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We present a study of emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires. A comparison of surface emitted photoluminescence (PL) and electroluminescence (EL) spectra from a p-i-n junction structure shows enhanced quantum wire emission in EL compared to PL. This behavior is discussed in terms of enhanced carrier capture by the quantum wire for electrical injection into the structure. With increasing forward bias current the quantum wire EL spectra exhibit subband filling and saturation effects. In addition to the ground state transition, at least three excited state related transitions are observed. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
78.55.Cr III-V semiconductors

Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

P. T. Lai, Xu Jingping, H. B. Lo, and Y. C. Cheng

Appl. Phys. Lett. 70, 996 (1997); http://dx.doi.org/10.1063/1.118460 (3 pages) | Cited 3 times

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Quality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.
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77.55.-g Dielectric thin films
85.40.Sz Deposition technology
85.30.Tv Field effect devices

Loss of electrical conductivity in boron-doped diamond due to ion-induced damage

R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, and S. Prawer

Appl. Phys. Lett. 70, 999 (1997); http://dx.doi.org/10.1063/1.118461 (3 pages) | Cited 14 times

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The response of B-ion-implanted type-IIa diamond to light ion (H, He) irradiation is investigated by monitoring the sample resistance as a function of dose. It is found that the resistivity of the layer increases rapidly with increasing dose, and reaches the resistivity of the undoped diamond for irradiation doses much less than those required for the onset of damage related electrical conductivity in pristine diamond. It is shown that defects created by the nuclear stopping process act as compensating centers for the B acceptors. The present findings are of importance for the design of radiation hard diamond based electronic devices and suggests a method for the isolation of B-doped devices on a diamond chip. The results of the present work also explain why the collection distance in intrinsic nondoped diamond radiation detectors actually increases with increasing ion dose. © 1997 American Institute of Physics.
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73.61.Cw Elemental semiconductors
61.80.Jh Ion radiation effects
61.72.up Other materials

Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

Jan-Shing Su, Wei-Chou Hsu, Yu-Shyan Lin, and Wei Lin

Appl. Phys. Lett. 70, 1002 (1997); http://dx.doi.org/10.1063/1.118465 (3 pages) | Cited 1 time

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Three-terminal GaAs/InGaAs/GaAs pseudomorphic real-space transfer heterostructure employing graded channel as the emitter layer grown by low-pressure metal-organic chemical-vapor deposition has been fabricated. We observe controllable drain cut-in voltage characteristics with strong negative differential resistance. The largest peak-to-valley current ratio of the proposed device is about 33 000 at room temperature. Moreover, we observe an energy exchange effect between electrons. © 1997 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Fermi energy pinning at the surface during growth of n- and p-type GaAs

C. Y. Chen, R. M. Cohen, D. S. Simons, and P. H. Chi

Appl. Phys. Lett. 70, 1005 (1997); http://dx.doi.org/10.1063/1.118474 (3 pages)

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The Te donor concentration has been used as a probe to infer the surface carrier concentration during growth by organometallic vapor phase epitaxy. With the partial pressure of Te held constant during the growth of an npn structure, the Te concentration is found to remain nearly unchanged across the p-n junctions. This result is used to show that the carrier concentration at the growing surface shifts by a negligible amount as the growth is switched between n- and p-type GaAs. When combined with previous results for p-type GaAs, we conclude that the Fermi energy at the (100)-oriented surface remains pinned between 100 and 200 meV below the intrinsic Fermi energy, independent of the type or the concentration of dopant used. © 1997 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.25.+i Surface conductivity and carrier phenomena
61.72.S- Impurities in crystals

Novel cost-effective bifacial silicon solar cells with 19.4% front and 18.1% rear efficiency

Andreas Hübner, Armin G. Aberle, and Rudolf Hezel

Appl. Phys. Lett. 70, 1008 (1997); http://dx.doi.org/10.1063/1.118466 (3 pages) | Cited 15 times

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Bifacial solar cells are a promising possibility to lower the costs of solar electricity compared to conventional monofacial solar cells. These devices utilize the sunlight more efficiently since they are able to convert light incident on both sides of the cell. In this letter, a novel, cost-effective bifacial silicon solar cell structure is presented. On float-zone silicon, the cells exhibit conversion efficiencies of 19.4% and 16.5% under 1-sun front and rear illumination, respectively. Furthermore, a “symmetrical” version of the cells is presented demonstrating front and rear efficiencies of 18.4% and 18.1%. In spite of the simplicity of the cell fabrication process, these are the highest independently confirmed efficiencies ever reported for bifacial silicon solar cells. © 1997 American Institute of Physics.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.60.Bt Optoelectronic device characterization, design, and modeling

Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells

R. Scheer, M. Wilhelm, and L. Stolt

Appl. Phys. Lett. 70, 1011 (1997); http://dx.doi.org/10.1063/1.118467 (3 pages) | Cited 5 times

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Electron-beam-induced current (EBIC) profiles of Mo/CuInX2/CdS/ZnO thin film solar cells with X=Se, S were recorded at different temperatures. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For a CuInS2 based cell, charge collection is maintained by diffusion transport of minority carriers to the junction with an effective diffusion length of 1.3±0.2 μm. This value is independent on temperature between 123 and 373 K. A CuInSe2 based cell exhibits increased collection of charge carriers created at the back contact on decreasing temperature. The temperature variation of the EBIC profiles is discussed considering the effect of bulk and grain boundary recombination. © 1997 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC

C. Peppermüller, R. Helbig, K. Rottner, and A. Schöner

Appl. Phys. Lett. 70, 1014 (1997); http://dx.doi.org/10.1063/1.118468 (3 pages) | Cited 5 times

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We investigated the low temperature (T<2 K) photoluminescence (LTPL) emission of 6H–SiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1700 °C, we detected new LTPL emission at 4205 Å. After implantation of hydrogen into the boron-implanted and annealed sample, another LTPL emission at 4183 Å appeared. We interpret two additional peaks as vibrational modes of the 4183 Å emission with energies of 86 and 118 meV. © 1997 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.72.up Other materials
61.72.Yx Interaction between different crystal defects; gettering effect

High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

Andrés Cuevas, Matthew Stocks, Stephane Armand, Michael Stuckings, Andrew Blakers, and Francesca Ferrazza

Appl. Phys. Lett. 70, 1017 (1997); http://dx.doi.org/10.1063/1.118469 (3 pages) | Cited 14 times

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The electronic quality of multicrystalline material produced by directional solidification has been evaluated by means of photoconductance techniques. Very high minority carrier lifetimes, in the vicinity of 200 μs, have been measured in p-type 1.5 Ω cm material that had received a phosphorus diffusion gettering treatment. The measurements correspond to an effective lifetime averaged over an area of 3 cm2 that includes several grain boundaries and reflects the combined bulk, grain boundary and surface recombination mechanisms. The high lifetime (15 μs) also obtained in low resistivity 0.2 Ω cm wafers has allowed the fabrication of solar cells with an open-circuit voltage of 657 mV (AM1.5 G, 100 mW/cm2, 25 °C), probably the highest ever reported for multicrystalline silicon. © 1997 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Pz Photoconduction and photovoltaic effects
61.72.Yx Interaction between different crystal defects; gettering effect
72.80.Cw Elemental semiconductors

Evidence of strain and lattice distortion in lead sulfide nanocrystallites

S. B. Qadri, J. P. Yang, E. F. Skelton, and B. R. Ratna

Appl. Phys. Lett. 70, 1020 (1997); http://dx.doi.org/10.1063/1.118470 (2 pages) | Cited 45 times

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X-ray diffraction studies on nanometer sized lead sulfide particles reveal the presence of a compressive strain. A number of samples with particle sizes ranging from 2 to 16 nm were synthesized using the three dimensional periodic, bicontinuous cubic phase as a matrix. Samples of the larger size particles could be indexed to an fcc lattice. As the particle size decreased below 6 nm, a tetragonal distortion of the cubic lattice was observed, accompanied by a decrease in the unit cell volume. © 1997 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
61.72.Dd Experimental determination of defects by diffraction and scattering
61.05.C- X-ray diffraction and scattering

Preparation and termination of well-defined CdTe(100) and Cd(Zn)Te(100) surfaces

C. Heske, U. Winkler, H. Neureiter, M. Sokolowski, R. Fink, E. Umbach, Ch. Jung, and P. R. Bressler

Appl. Phys. Lett. 70, 1022 (1997); http://dx.doi.org/10.1063/1.118432 (3 pages) | Cited 17 times

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Polar (100) surfaces of commercial CdTe and Cd(Zn)Te single crystals were prepared by ion sputtering and annealing at different temperatures and under Te flux, Cd flux, or in ultrahigh vacuum. Various surface reconstructions with high structural order were obtained. Soft x-ray photoemission investigations of the Cd and Te 3d surface core-level shifts were employed to derive the surface termination, revealing Cd-terminated surfaces for most preparations and various reconstructions. The results suggest that sputter/annealing cycles are suitable for the preparation of highly ordered and uniformly terminated substrates for semiconductor heterojunctions on CdTe and Cd(Zn)Te without the need of an additional buffer layer. © 1997 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Ea III-V semiconductors

Arsenic mediated reconstructions on cubic (001) GaN

G. Feuillet, H. Hamaguchi, K. Ohta, P. Hacke, H. Okumura, and S. Yoshida

Appl. Phys. Lett. 70, 1025 (1997); http://dx.doi.org/10.1063/1.118433 (3 pages) | Cited 37 times

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The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
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68.35.Rh Phase transitions and critical phenomena
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

Seong-Don Hwang, Ken Yang, P. A. Dowben, Ahmad A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, and D. N. McIlroy

Appl. Phys. Lett. 70, 1028 (1997); http://dx.doi.org/10.1063/1.118434 (3 pages) | Cited 38 times

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We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures. © 1997 American Institute of Physics.
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85.30.Kk Junction diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

K. Paschke, T. Geue, T. A. Barberka, A. Bolm, U. Pietsch, M. Rösch, E. Batke, F. Faller, K. Kerkel, J. Oshinowo, and A. Forchel

Appl. Phys. Lett. 70, 1031 (1997); http://dx.doi.org/10.1063/1.118473 (3 pages) | Cited 5 times

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Free-standing wire arrays prepared by holographic exposure and wet chemical deep etching on a vertically arranged GaAs/GaInAs/GaAs[001] single quantum well structure were characterized by x-ray grazing incidence diffraction using synchrotron radiation. Using a grazing angle of αi ≈ 0.05° the diffracted intensity stems primarily from the surface grating. It’s periodicity (D ≈ 480 nm) was determined close to the (−220) and (220) Bragg reflection being parallel and perpendicular to the orientation of wires, respectively. The average wire width [(21.6±1.5) nm and (96.6±1.5) nm, respectively] and the coherence length of the grating (ξ ≈ 2 μm) were obtained via Fourier transformation of the (220) shape function. © 1997 American Institute of Physics.
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61.05.cm X-ray reflectometry (surfaces, interfaces, films)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

On the role of pre-existing, unhealed cracks on the bending strain response of Ag-clad (Bi,Pb)2Sr2Ca2Cu3Ox tapes

M. Polak, J. A. Parrell, A. A. Polyanskii, A. E. Pashitski, and D. C. Larbalestier

Appl. Phys. Lett. 70, 1034 (1997); http://dx.doi.org/10.1063/1.118435 (3 pages) | Cited 22 times

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Studies of the transport critical current (Ic), magnetization, magnetic flux penetration, and microstructure of pressed and rolled Ag-clad (Bi,Pb)2Sr2Ca2Cu3Ox tapes (2223) have been made as a function of bending strain. Pressed tapes exhibited markedly less degradation of Ic from strain than did rolled tapes, while the magnetization of pressed tapes declined much more rapidly with bending strain than did either of the transport currents. Magneto-optical imaging of nonbent pressed samples revealed a network of flux-penetrated defect channels that were primarily oriented parallel to the tape axis. Bending such samples to a small strain increased the visibility of these defects, believed to be cracks. This network correlates well to the cracks produced in intermediate thermomechanical processing deformation steps. The greater sensitivity of the transport current of rolled samples to bending is further direct proof of the fact that the tape “remembers” the cracks induced in the core during intermediate deformation and that heat treatment after the deformation does not heal all damage. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Ld Mechanical and acoustical properties, elasticity, and ultrasonic attenuation
74.25.Ha Magnetic properties including vortex structures and related phenomena
84.71.Mn Superconducting wires, fibers, and tapes

Nuclear magnetic resonance using a high temperature superconducting quantum interference device

S. Kumar, R. Matthews, S. G. Haupt, D. K. Lathrop, M. Takigawa, J. R. Rozen, S. L. Brown, and R. H. Koch

Appl. Phys. Lett. 70, 1037 (1997); http://dx.doi.org/10.1063/1.118436 (3 pages) | Cited 17 times

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In this letter, we present results of experiments in which nuclear magnetic resonance (NMR) signals were detected using an untuned pickup coil coupled to a high temperature superconductor (HTS) based superconducting quantum interference device (SQUID). We were able to operate the HTS SQUID in the presence of static fields of up to 500 Gauss and radio frequency fields of up to 6 Gauss. The ability of a HTS SQUID to detect NMR signals opens up the possibility of using a sensitive detector for practical applications involving NMR that require a broad detection bandwidth. © 1997 American Institute of Physics.
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76.60.-k Nuclear magnetic resonance and relaxation
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Photoinduced magnetic pole inversion in a ferro–ferrimagnet: (Fe0.40IIMn0.60II)1.5CrIII(CN)6

Shin-ichi Ohkoshi, Shinsuke Yorozu, Osamu Sato, Tomokazu Iyoda, Akira Fujishima, and Kazuhito Hashimoto

Appl. Phys. Lett. 70, 1040 (1997); http://dx.doi.org/10.1063/1.118475 (3 pages) | Cited 101 times

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We tried to design the magnet exhibiting magnetic pole (N and S) inversion by photostimuli. The magnetization of Fe1.5IICrIII(CN)6⋅7.5H2O was changed in a photon mode by visible light. A ferro-ferrimagnet (Fe0.40IIMn0.60II)1.5CrIII(CN)6⋅7.5H2O mixed by ferromagnetic (Fe–Cr system showing the change of magnetization by optical stimuli) site and ferrimagnetic (Mn–Cr system showing no optical response) site showed negative magnetization at the temperature lower than compensation temperature (Tcomp=19 K). In this mixed metal cyanide magnet we have succeeded in demonstrating a novel magnetic behavior “photoinduced magnetic pole inversion.” Moreover, the magnetic pole inversion can be induced repeatedly by alternate optical and thermal stimulations. © 1997 American Institute of Physics.
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75.50.Ww Permanent magnets
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Self-organized Fe nanowire arrays prepared by shadow deposition on NaCl(110) templates

Akira Sugawara, T. Coyle, G. G. Hembree, and M. R. Scheinfein

Appl. Phys. Lett. 70, 1043 (1997); http://dx.doi.org/10.1063/1.118437 (3 pages) | Cited 42 times

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Iron nanowire arrays have been grown by shadow deposition on a self-organized grating template produced by annealing the sodium chloride (110) surface. The typical wire size as measured using transmission electron microscopy is 45 nm×13 nm×10 μm. The typical wire array period is 90 nm. The magnetic properties were dominated by a strong in-plane shape anisotropy. The hysteresis loops examined by magneto-optical Kerr effect measurements indicated coherent switching, even though the individual wires were isolated from one another. © 1997 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Rf Surface magnetism
75.50.Bb Fe and its alloys
68.55.-a Thin film structure and morphology

Magnetoresistance behavior of submicron Ni80Fe20 wires

A. O. Adeyeye, G. Lauhoff, J. A. C. Bland, C. Daboo, D. G. Hasko, and H. Ahmed

Appl. Phys. Lett. 70, 1046 (1997); http://dx.doi.org/10.1063/1.118438 (3 pages) | Cited 40 times

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We report the evolution of the magnetoresistance (MR) and magnetization behavior of Ni80Fe20 wire arrays as the width (w) is reduced from 200 to 0.3 μm. At around 1.5 μm width, the hysteretic behavior seen in continuous films shows the near reversible behavior characteristic of spin rotation processes. At low field (H<Ms), the anisotropic magnetoresistance determines the response and is strikingly size dependent. At high field (H>Ms), the linear MR response to the in-plane perpendicular hard axis field suggests a bulklike transverse MR effect. © 1997 American Institute of Physics.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.70.Ak Magnetic properties of monolayers and thin films

Experimental test of models of radio-frequency plasma sheaths

M. A. Sobolewski

Appl. Phys. Lett. 70, 1049 (1997); http://dx.doi.org/10.1063/1.118464 (3 pages) | Cited 13 times

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The ion current and sheath impedance were measured at the radio-frequency-powered electrode of an asymmetric, capacitively coupled plasma reactor, for discharges in argon at 1.33–133 Pa. The measurements were used to test the models of the radio frequency sheath derived by Lieberman [IEEE Trans. Plasma Sci. 17, 338 (1989)] and Godyak and Sternberg [Phys. Rev. A 42, 2299 (1990)], and establish the range of pressure and sheath voltage in which they are valid. © 1997 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.40.Hf Plasma-material interactions; boundary layer effects

CH3 detection in a low-density supersonic arcjet plasma during diamond synthesis

Michael H. Loh and Mark A. Cappelli

Appl. Phys. Lett. 70, 1052 (1997); http://dx.doi.org/10.1063/1.118439 (3 pages) | Cited 14 times

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We report on the measurement of methyl radical (CH3) densities in a low-density supersonic arcjet plasma used in the synthesis of diamond films. Single-pass, high-sensitivity ultraviolet (UV) absorption spectroscopy has been employed to study the X(2A2″)→B(2A1′) transition of the methyl radical near 216 nm. The minimum detectable CH3 density is found to be ∼ 4×1013 cm−3, which corresponds to a fractional absorption of 2×10−3 at a gas temperature of 1200 K. The dependence of the measured methyl column density on pressure and CH4/H2 flow ratio has been studied. The results are used to revise our previous estimates of the reactive “sticking” coefficient for CH3, and we now find that it is of order 10−2 under conditions where we have previously documented the growth of high quality diamond films. © 1997 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
81.05.ub Fullerenes and related materials
FREE

Comment on “Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect” [Appl. Phys. Lett. 67, 392 (1995)]

C. Özkul

Appl. Phys. Lett. 70, 1055 (1997); http://dx.doi.org/10.1063/1.118440 (2 pages) | Cited 1 time

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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
FREE

Response to “Comment on ‘Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect’ ’’ [Appl. Phys. Lett. 70, 1055 (1997)]

G. Wittmann and A. Winnacker

Appl. Phys. Lett. 70, 1057 (1997); http://dx.doi.org/10.1063/1.118472 (1 page)

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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
FREE

Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Jia-lin Chen, Hong-ming Chen, and Joseph Ya-min Lee

Appl. Phys. Lett. 70, 1058 (1997); http://dx.doi.org/10.1063/1.119268 (1 page)

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Abstract Unavailable
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Jp Dielectric breakdown and space-charge effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
73.40.Rw Metal-insulator-metal structures
99.10.Cd Errata
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