APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 71 / Issue 10

Appl. Phys. Lett. 71, 1403 (1997); http://dx.doi.org/10.1063/1.119906 (3 pages)

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

H. Mohseni1, E. Michel1, Jan Sandoen1, M. Razeghi1, W. Mitchel2, and G. Brown2

1Electrical and Computer Engineering Department, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
2Wright Laboratory, Materials Directorate, WPAFB, Ohio 45433-7707

(Received 29 May 1997; accepted 8 July 1997)

In this letter we report the molecular beam epitaxial growth and characterization of InAs/GaSb superlattices grown on semi-insulating GaAs substrates for long wavelength infrared detectors. Photoconductive detectors fabricated from the superlattices showed photoresponse up to 12 μm and peak responsivity of 5.5 V/W with Johnson noise limited detectivity of 1.33×109 cm Hz1/2/W at 10.3 μm at 78 K. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

indium compounds, gallium compounds, III-V semiconductors, molecular beam epitaxial growth, semiconductor epitaxial layers, semiconductor growth, semiconductor superlattices, infrared detectors, photodetectors, thermal noise, semiconductor device noise

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 07.57.Kp

    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.119906

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Jelen, S. Slivken, J. Hoff, G. J. Brown, and M. Razeghi, Appl. Phys. Lett. 70, 360 (1997)APPLAB000070000003000360000001.

    M. A. Kinch and A. Yariv, Appl. Phys. Lett. 55, 2093 (1989)APPLAB000055000020002093000001.

    G. A. Sai-Halasz, R. Tsu, and L. Esaki, Appl. Phys. Lett. 30, 651 (1977)APPLAB000030000012000651000001.

    D. L. Smith, T. C. McGill, and J. N. Schulman, Appl. Phys. Lett. 43, 180 (1983)APPLAB000043000002000180000001.

    E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P. M. Young, H. Ehrenreich, R. H. Miles, and D. H. Chow, Appl. Phys. Lett. 64, 3160 (1994)APPLAB000064000023003160000001.

    C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).

    J. L. Johnson, L. A. Samoska, A. C. Gossard, J. Merz, M. D. Jack, G. R. Chapman, B. A. Baumgratz, K. Kosai, and S. M. Johnson, J. Appl. Phys. 80, 1116 (1996)JAPIAU000080000002001116000001.


For access to citing articles, you need to log in.



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
  2. Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells
  3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
  4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  5. Rapid relaxation of hot carriers in GaAs fractional‐layer superlattice quantum wires
Go to AIP Home
Copyright © American Institute of Physics
close