Measurements of quasi-Fermi energies by scanning electron beam

Mil’shtein, S.

doi:doi:10.1063/1.119907

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Applied Physics Letters / Volume 71 / Issue 10

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Appl. Phys. Lett. 71, 1406 (1997); http://dx.doi.org/10.1063/1.119907 (3 pages)

Measurements of quasi-Fermi energies by scanning electron beam

S. Mil’shtein

Department of Electrical Engineering, Advanced Electronics Technology Center, University of Massachusetts, Lowell, Massachusetts 01854

(Received 7 August 1996; accepted 14 July 1997)

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Abstract

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Related Content

Scanning electron microscopy dark voltage contrast (DVC) was used to define quasi-Fermi energies in a silicon p-n junction either under illumination or forward bias conditions. Quantitative DVC measurements have proven to be a precise method of locating quasi-Fermi levels (QFLs) in any operating device. By simultaneously using light and electron beams we have obtained accurate measurements of the position of QFLs by DVC in an illuminated p-n junction. © 1997 American Institute of Physics.

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KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, p-n junctions, scanning electron microscopy, Fermi level

PACS

73.20.At

Surface states, band structure, electron density of states
73.40.Lq

Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.37.Hk

Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp

Transmission electron microscopy (TEM)
73.61.Cw

Elemental semiconductors