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10 Nov 1997

Volume 71, Issue 19, pp. 2725-2857

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Ion-induced effective surface diffusion in ion sputtering

Maxim A. Makeev and Albert-László Barabási

Appl. Phys. Lett. 71, 2800 (1997); http://dx.doi.org/10.1063/1.120140 (3 pages) | Cited 109 times

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Ion bombardment is known to enhance surface diffusion and affect the surface morphology. Here we demonstrate that preferential erosion during ion sputtering can lead to a physical phenomenon reminiscent of surface diffusion, what we call effective surface diffusion (ESD), that does not imply mass transport along the surface and is independent of the temperature. We calculate the ion-induced ESD constant and its dependence on the ion energy, flux and angle of incidence, showing that sputtering can both enhance and suppress surface diffusion. The influence of ion-induced ESD on ripple formation and roughening of ion-sputtered surfaces is discussed and summarized in a morphological phase diagram. © 1997 American Institute of Physics.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear

Lateral current-constriction in vertical devices using openings in buried lattices of metallic discs

L.-E. Wernersson, N. Carlsson, B. Gustafson, A. Litwin, and L. Samuelson

Appl. Phys. Lett. 71, 2803 (1997); http://dx.doi.org/10.1063/1.120141 (3 pages) | Cited 5 times

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Vertical channels in semi-insulating GaAs were realized by epitaxial overgrowth over lattices of W discs, including n×n vacant positions. The Schottky depletion around the metallic inclusions is responsible for the semi-insulating behavior, and, thus, conducting channels may be created in designed openings in the lattice. By measuring the current transport in structures with varying sizes of the channels, we demonstrate that the current is actually restricted to floating through the vacant positions. We further buried the metal discs, including openings, 60 nm above a resonant tunneling structure, and measured a negative differential resistance, with peak currents scaling with the opening area. These experiments demonstrate the effective combination of semiconductor heterostructures and embedded metal features for submicron, vertical injection into a heterostructure device. © 1997 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, and K. Kobashi

Appl. Phys. Lett. 71, 2806 (1997); http://dx.doi.org/10.1063/1.120142 (3 pages) | Cited 20 times

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Field emission characteristics of B-doped diamond thin films terminated with oxygen and hydrogen were investigated. The diamond thin films were prepared by microwave plasma chemical vapor deposition. The dependence of emission characteristics on the surface treatment and on the B concentration was investigated. The turn-on voltage required to extract a current of 0.1 nA depended on these preparation parameters. The emitters with lower B concentration emitted electrons at a lower turn-on voltage, and the H-terminated emitters had a lower turn-on voltage than O-terminated emitters. The analysis of the slope and the intercept of Fowler–Nordheim plot revealed that the dependence of turn-on voltage on the surface treatment is due to the difference of emission barrier height, and that the dependence on B concentration is due not to the emission barrier height but to the surface morphology. © 1997 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.65.-b Surface treatments
81.05.ub Fullerenes and related materials
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

L. Rebohle, J. von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Fröb, and K. Leo

Appl. Phys. Lett. 71, 2809 (1997); http://dx.doi.org/10.1063/1.120143 (3 pages) | Cited 107 times

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The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implanted SiO2 films. The PL spectra from Ge-implanted SiO2 were recorded as a function of annealing temperature. It was found that the blue-violet PL from Ge-rich oxide layers reaches a maximum after annealing at 500 °C for 30 min, and is substantially more intense than the PL emission from Si-implanted oxides. The neutral oxygen vacancy is believed to be responsible for the observed luminescence. The EL spectrum from the Ge-implanted oxide after annealing at 1000 °C correlates very well with the PL one, and shows a linear dependence on the injected current. The EL emission was strong enough to be readily seen with the naked eye and the EL efficiency was assessed to be about 5×10−4. © 1997 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

D. Lubben, G. Eres, G. E. Jellison, R. D. Westbrook, and R. F. Wood

Appl. Phys. Lett. 71, 2812 (1997); http://dx.doi.org/10.1063/1.120194 (3 pages) | Cited 1 time

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Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015–1019 cm−2) for films deposited between 650 and 800 °C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm−2, respectively, with fill factors as high as 70%. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling

p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy

M. Zandian, A. C. Chen, D. D. Edwall, J. G. Pasko, and J. M. Arias

Appl. Phys. Lett. 71, 2815 (1997); http://dx.doi.org/10.1063/1.120144 (3 pages) | Cited 40 times

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Growth of in situ As doped Hg1−xCdxTe by molecular beam epitaxy and activation of As at 250 °C is reported. We have used elemental arsenic, As4, as the p-type dopant source. The activation of As was observed in the 1016–1018 cm−3 range after a low temperature annealing step at 250 °C. However, for doping levels above 5×1018 cm−3, we have observed that the As activation efficiency drops. It is speculated at this time that self-compensation and formation of neutral As complexes may limit doping efficiency at very high levels. We also report our data on the structural and electrical characteristics of these As doped p-type layers using secondary ion mass spectroscopy analysis, and Hall effect measurements. An acceptor activation energy of 5.4 meV was obtained based on the dependence of the Hall coefficient on temperature. This value was attributed to singly ionized As located on a Te site (AsTe•) acting as an acceptor. A brief discussion on activation mechanism of As doped p-type HgCdTe material is also presented. © 1997 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.Dz II-VI semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.55.Gs II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors

Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

S. Fréchengues, V. Drouot, B. Lambert, D. Lemoine, S. Loualiche, A. Le Corre, and H. L’Haridon

Appl. Phys. Lett. 71, 2818 (1997); http://dx.doi.org/10.1063/1.120145 (3 pages) | Cited 20 times

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The optical properties of self-assembled InAs dots on InP have been measured by photoluminescence, and using a selective chemical etching of the InP cap layer, the geometrical properties of the same dots have been determined by atomic force microscopy. From the dot dimensions, the calculated (n = 1) electron to heavy hole transition energies with a simple model are strongly correlated to the measured photoluminescence spectra. This technique allows a better understanding of the correlation between structural and optical properties of self-assembled dots. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film

Yue Kuo

Appl. Phys. Lett. 71, 2821 (1997); http://dx.doi.org/10.1063/1.120146 (3 pages) | Cited 4 times

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Unusual doping gas effects on the plasma enhanced chemical vapor deposited heavily phosphorus-doped silicon film have been observed. The deposition rate increases linearly with the silane (1% phosphine) feed gas flow rate. However, the film’s resistivity increased abruptly, i.e., more than 2 orders of magnitude, in a narrow range of flow rate. This was inconsistent with the change of the film’s dopant or hydrogen concentration. It was consistent with the variation of the film’s morphology. For example, below the transition flow rate, the film had a large volume fraction of microcrystal; above the transition flow rate, the film was amorphous. The enhancement of the doping efficiency is probably due to the segregation of the dopant at grain boundaries. In addition, the deposition rate was facilitated by the existence of the doping gas. It is possible that the doping gas influences the surface electrical characteristics during the film growing process, which accounts for the increase of the deposition rate and the mechanism of the crystal formation. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.55.-a Thin film structure and morphology
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Mm Grain and twin boundaries
73.25.+i Surface conductivity and carrier phenomena

Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

S. Wang, A. Eckau, E. Neufeld, R. Carius, and Ch. Buchal

Appl. Phys. Lett. 71, 2824 (1997); http://dx.doi.org/10.1063/1.120147 (3 pages) | Cited 19 times

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We have demonstrated the 1.5 μm electroluminescence from implanted Er ions inside the SiO2 insulator of a silicon metal-oxide-semiconductor structure under forward bias. The Er ions are excited by the direct impact from electrons tunneling through the oxide at electric fields larger than 6 MV/cm. Under these conditions, we measured an excitation cross-section of 6±2×10−15 cm2 and a lifetime of the excited 4I13/2 level of 1.5 ms. © 1997 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Nk Insulators
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Jb Light-emitting devices
73.50.Mx High-frequency effects; plasma effects
73.50.Fq High-field and nonlinear effects

Avalanche breakdown mechanism originating from Γ–X–Γ transfer in GaAs/AlAs superlattices

M. Hosoda, K. Tominaga, N. Ohtani, K. Kuroyanagi, N. Egami, H. Mimura, K. Kawashima, and K. Fujiwara

Appl. Phys. Lett. 71, 2827 (1997); http://dx.doi.org/10.1063/1.120148 (3 pages) | Cited 5 times

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An avalanche breakdown mechanism in GaAs/AlAs type-I superlattices is demonstrated. This mechanism shows its power at a bias voltage where both of the following two conditions are met. One is electron transfer from the Γ ground state to the X ground state (Γ1-X1), and the other is the escape of electrons from the X1 state to the second Γ state (X1-Γ2). Under both conditions, because the AlAs barriers become transparent for electron transport due to the Γ1-X1-Γ2 path, the drift speed (i.e., the acceleration of electrons) grows, and then the superlattice shows the phenomenon of avalanche breakdown. From our experimental results for various GaAs/AlAs superlattices, it is thought that such avalanche breakdown frequently occurs when type-I GaAs/AlAs superlattices have thick barrier widths. © 1997 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.Ey III-V and II-VI semiconductors
72.20.Ht High-field and nonlinear effects

Remote electron beam induced current imaging of electrically active regions in YBa2Cu3O7−x single crystals

C. Díaz-Guerra and J. Piqueras

Appl. Phys. Lett. 71, 2830 (1997); http://dx.doi.org/10.1063/1.120419 (3 pages) | Cited 5 times

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Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in YBa2Cu3O7−x single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these crystals is also established. Charge carrier diffusion length has been estimated at different temperatures from REBIC linescan profiles. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
62.20.F- Deformation and plasticity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Lm Deformation, plasticity, and creep
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Reorientational magnetic transition in mesoscopic cobalt dots

M. Hehn, K. Ounadjela, R. Ferré, W. Grange, and F. Rousseaux

Appl. Phys. Lett. 71, 2833 (1997); http://dx.doi.org/10.1063/1.119567 (3 pages) | Cited 16 times

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We have measured magnetic anisotropy constants and domain structures in arrays of magnetic dots 0.5 μm wide fabricated out of an epitaxial (0001) hcp cobalt film. Occurrence of a concentric stripe domain pattern for which the magnetization is mostly in-plane with small alternately up and down perpendicular components is found for a 25-nm-thick cobalt dot array. Interestingly, this sample produces a spin reorientation from a quasi in-plane to a fully perpendicularly oriented magnetization when the temperature is lowered, due to an increase of the perpendicular anisotropy at low temperature. © 1997 American Institute of Physics.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy

The structure, magnetostriction, and anisotropy compensation of (Tb1−xPrx)(Fe0.4Co0.6)1.9 alloys

Z. J. Guo, B. W. Wang, Z. D. Zhang, X. G. Zhao, X. M. Jin, W. Liu, and Q. F. Xiao

Appl. Phys. Lett. 71, 2836 (1997); http://dx.doi.org/10.1063/1.120193 (3 pages) | Cited 25 times

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The structure, magnetostriction, and anisotropy compensation of (Tb1−xPrx)(Fe0.4Co0.6)1.9 (0 ⩽ x ⩽ 1) alloys were investigated. It was found that the matrix of (Tb1−xPrx)(Fe0.4Co0.6)1.9 alloys is a (Tb,Pr)(Fe,Co)2 phase with a MgCu2-type cubic Laves structure, and a second phase of small amount is a (Tb,Pr)(Fe,Co)3 phase when x ⩽ 0.2 and x = 0.5 and 1.0. In the range 0.2<x ⩽ 0.4, the amount of the (Tb,Pr)(Fe,Co)3 phase with a PuNi3-type structure increases with increasing x and becomes the main phase when x = 0.4. When 0.5<x ⩽ 0.6, the (Tb,Pr)(Fe,Co)3 phase increases sharply, whereas the 0.6<x ⩽ 0.8, it decreases with increasing x. The spontaneous magnetostriction λ111 of the alloys exhibits a peak near x = 0.8 (λ111 = 2370×10−6). The magnetostriction ∣λ∥−λ⊥∣ at room temperature was also examined. © 1997 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy
61.66.Dk Alloys

Current distribution effects in magnetoresistive tunnel junctions

R. J. M. van de Veerdonk, J. Nowak, R. Meservey, J. S. Moodera, and W. J. M. de Jonge

Appl. Phys. Lett. 71, 2839 (1997); http://dx.doi.org/10.1063/1.120149 (3 pages) | Cited 56 times

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The influence of an inhomogeneous current density on the (magneto)resistance of a ferromagnet–insulator–ferromagnet tunnel junction in the cross-strip geometry is analyzed using a finite element approach. The four-probe resistance is smaller than the actual resistance for electrode resistances (in the junction area) comparable to or higher than the junction resistance. Even negative four-probe resistances can be obtained. The apparent resistance change due to the junction magnetoresistive effect also decreases, but always remains positive. This results in unrealistically large apparent magnetoresistance ratios which can even approach infinity, which explains some recent experiments. © 1997 American Institute of Physics.
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73.40.Gk Tunneling
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
02.70.Dh Finite-element and Galerkin methods

Demonstrated low radiative loss of a quadrupole ultrashort electrical pulse propagated on a three strip coplanar transmission line

R. W. McGowan, D. Grischkowsky, and J. A. Misewich

Appl. Phys. Lett. 71, 2842 (1997); http://dx.doi.org/10.1063/1.120150 (3 pages)

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We present an approach for reducing the absorption and dispersion due to Cherenkov radiation on coplanar transmission lines, which does not require the reduction of the permittivity mismatch between the substrate and the superstrate of the optoelectronic chip. Exciting only the odd mode of a three strip coplanar transmission line, a quadrupole ultrashort electrical pulse is generated and propagates with very low radiative loss over long distances (>5 mm). The quadrupole’s measured frequency dependent absorption and dispersion, are compared to those measured for the even mode (dipole) pulse on the same transmission line. The radiative loss for the quadrupole pulse is shown to be <1/10 that of the dipole pulse, and for equal transverse dimensions it is <1/10 the radiative loss of the two strip transmission line and of the two slot coplanar waveguide. © 1997 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
41.60.Bq Cherenkov radiation

Junction properties of aluminum/polypyrrole (polypyrrole derivatives) Schottky diodes

Ramadhar Singh and Amarjeet K. Narula

Appl. Phys. Lett. 71, 2845 (1997); http://dx.doi.org/10.1063/1.120151 (3 pages) | Cited 21 times

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The current–voltage characteristics of Schottky junctions formed by using aluminum on polypyrrole, poly(N-methyl pyrrole) and the copolymer poly(N-methyl pyrrole–pyrrole) have been investigated. The formation of the junctions has been confirmed by capacitance–voltage characteristics and Chot plots. The results have been explained on the basis of thermionic emission theory. © 1997 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices

Microwave plasma chemical vapor deposited diamond tips for scanning tunneling microscopy

Sacharia Albin, Jianli Zheng, John B. Cooper, Weihai Fu, and Arnel C. Lavarias

Appl. Phys. Lett. 71, 2848 (1997); http://dx.doi.org/10.1063/1.120152 (3 pages) | Cited 8 times

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Diamond microparticles were grown on etched tungsten wires using a microwave plasma-assisted chemical vapor deposition process. The apexes on cubo-octahedral particles bound by {100} and {111} facets were effectively used as tunneling tips for scanning tunneling microscopy. The atomically resolved surface image of highly oriented pyrolytic graphite was acquired. Tunneling characteristics revealed a higher electron emission from the diamond tips than that from the platinum–iridium tips. The same diamond tips were used to produce surface indentation and its image. © 1997 American Institute of Physics.
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81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Rubbing-free, vertically aligned nematic liquid crystal display controlled by in-plane field

S. H. Lee, H. Y. Kim, I. C. Park, B. G. Rho, J. S. Park, H. S. Park, and C. H. Lee

Appl. Phys. Lett. 71, 2851 (1997); http://dx.doi.org/10.1063/1.120153 (3 pages) | Cited 24 times

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We fabricated a homeotropically aligned nematic liquid crystal display with positive dielectric anisotropy, whose on and off states are controlled by in-plane field. The rubbing-free device, dark in voltage-off state, reveals bright uniformity in all directions due to the dual domainlike director configuration in the voltage-on state. The electro-optic characteristics of one prototype with excellent viewing angles are reported herein. © 1997 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Photoinduced poling of lead titanate zirconate thin films

A. L. Kholkin and N. Setter

Appl. Phys. Lett. 71, 2854 (1997); http://dx.doi.org/10.1063/1.120154 (3 pages) | Cited 16 times

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The influence of ultraviolet (UV) illumination on piezoelectric properties is investigated in lead zirconate titanate (PZT) thin films. It is found that the poling procedure is more effective when the film is exposed to a broadband UV light in the presence of a high electric field. Piezoelectric coefficients are increased and aging rates are decreased as compared to poling in dark conditions. Both an internal bias field and a polarization offset are observed in the piezoelectric hysteresis loops. The mechanism of the photoinduced poling effect in PZT films is probably due to electron trapping near the film-electrode interface. © 1997 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.55.-g Dielectric thin films
FREE

Erratum: “Nanoscale metal/self-assembled monolayer/metal heterostructures” [Appl. Phys. Lett. 71, 611 (1997)]

C. Zhou, M. R. Deshpande, M. A. Reed, L. Jones, and J. M. Tour

Appl. Phys. Lett. 71, 2857 (1997); http://dx.doi.org/10.1063/1.120566 (1 page) | Cited 4 times

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Abstract Unavailable
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73.40.Rw Metal-insulator-metal structures
73.40.Ei Rectification
73.50.Dn Low-field transport and mobility; piezoresistance
99.10.Cd Errata
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