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8 Dec 1997

Volume 71, Issue 23, pp. 3323-3448

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Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering

S. Q. Hong, T. Wetteroth, H. Shin, S. R. Wilson, D. Werho, T.-C. Lee, and D. K. Schroder

Appl. Phys. Lett. 71, 3397 (1997); http://dx.doi.org/10.1063/1.120347 (3 pages) | Cited 7 times

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Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a significant improvement in gate oxide integrity is achieved, with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in localized oxide charge trapping. The same gettering effect on separation-by-implantation-of-oxygen and bonded silicon-on-insulator substrates suggests that the lack of effective gettering is mainly responsible for the oxide degradation regardless of the TFSOI type. This work also demonstrates the feasibility of achieving bulk-comparable gate oxides on TFSOI substrates. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
81.65.Tx Gettering
81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Jp Dielectric breakdown and space-charge effects
73.20.At Surface states, band structure, electron density of states
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Preservation of atomically clean silicon surfaces in air by contact bonding

François Grey and Karin Hermansson

Appl. Phys. Lett. 71, 3400 (1997); http://dx.doi.org/10.1063/1.120348 (3 pages) | Cited 3 times

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When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface reconstruction from oxidation in air. Contact bonding opens the way to novel applications of reconstructed semiconductor surfaces, by preserving their atomic structure intact outside of a UHV chamber. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Mq Oxidation
81.65.Rv Passivation
72.80.Cw Elemental semiconductors
68.35.Rh Phase transitions and critical phenomena

Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon

K. Saitoh, M. Kondo, M. Fukawa, T. Nishimiya, A. Matsuda, W. Futako, and I. Shimizu

Appl. Phys. Lett. 71, 3403 (1997); http://dx.doi.org/10.1063/1.120324 (3 pages) | Cited 26 times

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We have investigated the role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) formation using hydrogen plasma treatments, in particular examining the possibility of subsurface reaction due to permeating hydrogen atoms, which leads to the crystallization of hydrogenated amorphous silicon (a-Si:H). It is demonstrated that the hydrogen plasma treatment of a-Si:H film on the anode using a cathode covered by a-Si:H film, which is inevitably coated during the deposition period, gives rise to the deposition of μc-Si:H over the a-Si:H layer, i.e., chemical transport takes place. It is also found that the pure hydrogen plasma treatment using a clean cathode induces only etching of the a-Si:H layer. These results imply that the present hydrogen plasma condition does not cause crystallization of a-Si:H but only etching, and that careful experimentation is required to determine the real subsurface reaction due to atomic hydrogen. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Gc Amorphous semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.55.-a Thin film structure and morphology
81.65.Cf Surface cleaning, etching, patterning
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Synthesis and characterization of PbSe quantum dots in phosphate glass

A. Lipovskii, E. Kolobkova, V. Petrikov, I. Kang, A. Olkhovets, T. Krauss, M. Thomas, J. Silcox, F. Wise, Q. Shen, and S. Kycia

Appl. Phys. Lett. 71, 3406 (1997); http://dx.doi.org/10.1063/1.120349 (3 pages) | Cited 66 times

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The controlled synthesis of PbSe nanocrystal quantum dots with narrow size distributions was achieved through phase decomposition of the PbSe solid solution in a phosphate glass host. Structural characterization by electron microscopy and x-ray diffraction shows that the dots have mean diameters between 2 and 15 nm. The exciton Bohr radius aB = 46 nm in PbSe, so these quantum dots provide unusual and perhaps unique access to the regime of strong quantum confinement. The optical absorption spectra are compared to the predictions of a theoretical treatment of the electronic structure. The theory agrees well with experiment for dots larger than ∼ 7 nm, but for smaller dots there is some deviation from the theoretical predictions. © 1997 American Institute of Physics.
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72.80.Jc Other crystalline inorganic semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Le Other inorganic semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Scanning tunneling spectroscopy of Ag–As–Se ion-conducting glasses

M. Ohto and K. Tanaka

Appl. Phys. Lett. 71, 3409 (1997); http://dx.doi.org/10.1063/1.120350 (3 pages) | Cited 3 times

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Electronic structures of Ag–As–Se glasses, which possess ion-hole mixed conduction, have been studied using a scanning tunneling microscope operating in tunneling-spectroscopy modes. The tunneling spectra show marked dependence on the scan speed of tip voltage. This scan-speed dependence appears to be caused by Ag+-ion migration which is induced by electric fields generated by tips. © 1997 American Institute of Physics.
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71.23.Cq Amorphous semiconductors, metallic glasses, glasses
72.80.Ng Disordered solids
72.60.+g Mixed conductivity and conductivity transitions
66.30.Qa Electromigration

Mutual phase locking on resonant flux-flow steps in stacked long Josephson junctions

G. Carapella and G. Costabile

Appl. Phys. Lett. 71, 3412 (1997); http://dx.doi.org/10.1063/1.120351 (3 pages) | Cited 3 times

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We demonstrate that, independently biasing the junctions in a two stack in the resonant flux-flow regime, we can obtain mutual locking in four different states. Two of them possibly consist of out-of-phase Josephson oscillations and two consist of in-phase oscillations. They are found experimentally to be very stable for a quite large range of applied magnetic field. © 1997 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Effects of proton irradiation on the high-temperature superconducting system Y1−xPrxBa2Cu3O7−δ

L. M. Paulius, R. E. Shamu, S. Ferguson, M. C. de Andrade, and M. B. Maple

Appl. Phys. Lett. 71, 3415 (1997); http://dx.doi.org/10.1063/1.120352 (3 pages) | Cited 6 times

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Magnetic measurements have been performed on polycrystalline samples of Y1−xPrxBa2Cu3O7−δ (x = 0, 0.1, 0.2, and 0.3) before and after irradiation with 12 MeV protons. While magnetic hysteresis measurements reveal that the critical current density Jc increases for all the samples after irradiation, magnetic relaxation measurements show that the effective pinning energy Ueff increases only for the samples with x ⩽ 0.1 and actually decreases for the samples with x ≥ 0.2. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
61.80.Jh Ion radiation effects
74.25.Sv Critical currents
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.N- Response to electromagnetic fields
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Doped rare-earth perovskite Mn films with colossal magnetoresistance

J.-Q. Wang, R. C. Barker, G.-J. Cui, T. Tamagawa, and B. L. Halpern

Appl. Phys. Lett. 71, 3418 (1997); http://dx.doi.org/10.1063/1.120353 (3 pages) | Cited 14 times

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We have fabricated, using Jet Vapor Deposition, films of Pb doped rare-earth perovskite Mn oxides which show colossal magnetoresistance (CMR) effect. We have achieved epitaxial CMR films at a high deposition rate of typically 0.3 nm/s, uniformly over a large area. Films grown on LaAlO3 with a wide range of thickness (0.2–1.1 μm) show epitaxial characteristics. Scanning electron microscope analysis indicates that the surface is smooth. The measured magnetization and magnetoresistance show comparable performance compared to similar CMR films made by other methods. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ng Insulators
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Synthesis and magnetic properties of PrFe11V1−xTix and their nitrides

S. L. Tang, B. W. Wang, C. Zhang, X. M. Jin, S. Y. Zhang, and Y. W. Du

Appl. Phys. Lett. 71, 3421 (1997); http://dx.doi.org/10.1063/1.120354 (3 pages) | Cited 2 times

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We have succeeded in synthesizing PrFe11V1−xTix (x = 0.2–1) compound and their nitrides with the ThMn12-type structure. The phase formation and magnetic properties have been investigated by x-ray diffraction, differential thermometric analysis, and magnetic measurement. The stable temperature range of the 1-12 phase for PrFe11V1−xTix alloys has been determined as a function of Ti content. PrFe11V compounds with the ThMn12-type structure do not exist and PrFe11Ti compounds with the TnMn12-type structure are obtained by annealing in a narrow temperature range between 1303 and 1383 K. Furthermore, 1-12 phase with the ThMn12-type structure can be obtained at lower temperature and wider temperature range with decreasing Ti content x (0.2 ⩽ x ⩽ 1). PrFe11V1−xTixNy with x = 0.2–1 has a Tc of about 730–785 K, Ba larger than 8 T and Ms in the range 144–148 emu/g. These intrinsic magnetic properties are highly favorable for permanent magnet applications. As a preliminary, an intrinsic coercivity of 5.4 kOe is obtained for PrFe11V0.5Ti0.5Ny at room temperature by using mechanical alloying technique. © 1997 American Institute of Physics.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
75.50.Ww Permanent magnets
75.50.Vv High coercivity materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.40.Gh Other heat and thermomechanical treatments
81.05.Bx Metals, semimetals, and alloys

Enhanced unidirectional anisotropy of the Co90Fe10/CrMnPt system by the NiO capping layer

Susumu Soeya, Hiroyuki Hoshiya, Kenichi Meguro, and Hiroshi Fukui

Appl. Phys. Lett. 71, 3424 (1997); http://dx.doi.org/10.1063/1.120355 (3 pages) | Cited 12 times

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The effect of a capping layer on the exchange coupled Co90Fe10/CrMnPt system was investigated. The NiO capping layer is able to enhance the unidirectional anisotropy Ke of the Co90Fe10/CrMnPt system to ∼ 0.302–0.345 erg/cm2. This strong Ke is thought to be caused by large stress emancipation of the NiO film through thermal annealing, which assists spreading of the CrMnPt lattice distortion in a desirable direction. This lattice distortion, in turn, leads to the enhancement of the CrMnPt magnetocrystalline anisotropy. The NiO capped Co90Fe10/CrMnPt system exhibits the same high blocking temperature TB of ∼ 300 °C as the noncapped one, i.e., there is no TB reduction due to the amplification of the CrMnPt lattice distortion. © 1997 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Gw Magnetic anisotropy
75.30.Et Exchange and superexchange interactions
75.50.Ee Antiferromagnetics
61.72.Cc Kinetics of defect formation and annealing

CoPt–C nanogranular magnetic thin films

J.-J. Delaunay, T. Hayashi, M. Tomita, S. Hirono, and S. Umemura

Appl. Phys. Lett. 71, 3427 (1997); http://dx.doi.org/10.1063/1.120356 (3 pages) | Cited 50 times

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Cobalt–platinum–carbon thin film was deposited with a chemical composition of Co50Pt15C35. The film had a nanogranular morphology with a grain size ranging from 5 to 15 nm. It consisted of cobalt–platinum grains which had a faulted hexagonal close-packed phase and were separated by graphitelike carbon boundaries. The film in-plane coercivity was 1500 Oe, compared to a few hundreds oersteds in the case of cobalt–carbon. This result establishes a way of fabricating high coercivity cobalt–carbon based materials, which have potential applications as high density magnetic recording media. © 1997 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Vv High coercivity materials
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Layer-dependent magnetization in ultrathin Eu films on Gd(0001)

Elke Arenholz, Kai Starke, and Günter Kaindl

Appl. Phys. Lett. 71, 3430 (1997); http://dx.doi.org/10.1063/1.120357 (3 pages) | Cited 1 time

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The magnetic order of ultrathin Eu films on Gd(0001) was studied in a layer-resolved way by magnetic circular dichroism in 4f photoemission in combination with layer-dependent 4f core-level shifts. It was found that Eu films up to 2 monolayers thick show a high net magnetization parallel to that of the Gd substrate, exhibiting a 6×6 reconstruction, while for thicker Eu layers both the superstructure and the ferromagnetic alignment break down. © 1997 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
78.20.Ls Magneto-optical effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
79.60.Dp Adsorbed layers and thin films
73.20.At Surface states, band structure, electron density of states

Comparison of the k⋅p and the direct diagonalization approaches for describing the electronic structure of quantum dots

Huaxiang Fu, Lin-Wang Wang, and Alex Zunger

Appl. Phys. Lett. 71, 3433 (1997); http://dx.doi.org/10.1063/1.120421 (3 pages) | Cited 28 times

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It is shown that the standard (decoupled) 6×6 k⋅p effective-mass approach for semiconductor quantum dots overestimates significantly the hole and electron confinement energies, and, for dots made of materials with small spin-orbit coupling (e.g., phosphides, sulphides) produces a reverse order of s- and p-like valence states. By contrasting the electronic structures of dots as obtained by a direct diagonalization (multiband) pseudopotential approach and by its k⋅p approximation, we are able to trace the systematic errors of k⋅p in dots to the k⋅p errors in the underlying bulk solids. This suggests a “diagnostic tool” and a strategy for improving the k⋅p. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

Monitoring of gravity drainage of water and light oil through a sand column by proton nuclear magnetic resonance

C. Choi, J. Bharatam, I. Frola, M. B. Dusseault, M. B. Geilikman, I. Chatzis, and M. M. Pintar

Appl. Phys. Lett. 71, 3436 (1997); http://dx.doi.org/10.1063/1.120358 (3 pages) | Cited 3 times

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Preliminary results of a proton nuclear magnetic resonance study of water and oil drainage under gravity through a sand column are reported. Evolution of the proton magnetization and its spin–spin relaxation time T2 are given as functions of drainage time. It was found that the bulklike fraction of the liquids drains out quickly, while the pendular and surface fractions drain slowly until an equilibrium is reached. The “undrainable,” residual liquid fraction was observed to be ∼6% and ∼48% of its initial value for water and light oil, respectively. The proton T2 of water and oil in different environments are analyzed by employing the fast exchange model. This method of monitoring the drainage of two liquids can be easily adapted to study the spacial and temporal evolution of the liquids in the presence of a gas phase. © 1997 American Institute of Physics.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
89.30.-g Fossil fuels and nuclear power

Theoretical analysis of laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces

Y. F. Lu, J. J. Yu, and W. K. Choi

Appl. Phys. Lett. 71, 3439 (1997); http://dx.doi.org/10.1063/1.120359 (2 pages) | Cited 10 times

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An analytical model was established to predict the laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces. The freezing of surface waves is considered the dominant mechanism for ripple formation. The model precisely predicts a linear relationship between the interface periodicity and the silicon dioxide thickness. The ripple periodicity in the substrates can hence be adjusted by varying the thickness of SiO2 overlayer. This process is expected to be useful in laser microtexturing for magnetic media of high storage density, which requires microtextures to be well controlled within a certain roughness to prevent a stiction failure. The theoretical calculation has a good agreement with the experimental results. © 1997 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Enhancement of microbeam x-ray fluorescence analysis using monolithic polycapillary focusing optics

N. Gao, I. Yu. Ponomarev, Q. F. Xiao, W. M. Gibson, and D. A. Carpenter

Appl. Phys. Lett. 71, 3441 (1997); http://dx.doi.org/10.1063/1.120360 (3 pages) | Cited 13 times

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A monolithic polycapillary focusing optic was tested in the microbeam x-ray fluorescence system at the Oak Ridge Center for Manufacturing Technology. The optic was designed to cover a wide energy range from 4 keV to 20 keV. The focal spot size of the output beam at 17.4 keV (Mo Kα) was measured to be 21 μm full width of half maximum. An average beam intensity of 1.5×105 photon/s/μm2 was obtained at the focus for Mo Kα line using a 12 W microfocus x-ray source. This intensity is about 2400 times over that of a direct beam at 100 mm away from the x-ray source. The small, intense x-ray beam obtained was used to analyze and map the compositions of different elements in industrial samples. © 1997 American Institute of Physics.
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82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
07.85.-m X- and γ-ray instruments

Band alignments of the platinum/SrBi2Ta2O9 interface

C. D. Gutleben

Appl. Phys. Lett. 71, 3444 (1997); http://dx.doi.org/10.1063/1.120402 (3 pages) | Cited 22 times

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In situ x-ray photoelectron spectroscopy was used to determine the band alignments of the platinum to SrBi2Ta2O9 contact. The interfaces were prepared by incremental evaporation of Pt onto a vacuum/O2 annealed polycrystalline surface grown by the sol-gel method. The results track the development of the band alignments from the submonolayer to the thick metal-film regimes. The Fermi level to ferroelectric valence-band offset of the asymptotic full metal contact was found to be 2.9 eV. The contact was also clearly shown to be highly disrupted with a bismuth-platinum alloy forming at the interface. © 1997 American Institute of Physics.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states
FREE

Erratum: “An all-polymer charge storage device” [Appl. Phys. Lett. 71, 1582 (1997)]

Yossef Gofer, Haripada Sarker, Jeffrey G. Killian, Theodore O. Poehler, and Peter C. Searson

Appl. Phys. Lett. 71, 3447 (1997); http://dx.doi.org/10.1063/1.120406 (1 page)

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Abstract Unavailable
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85.65.+h Molecular electronic devices
99.10.Cd Errata
FREE

Erratum: “Full band Monte Carlo investigation of electron transport in strained Si grown on Si1−xGex substrates” [Appl. Phys. Lett. 70, 2144 (1997)]

F. M. Bufler, P. Graf, S. Keith, and B. Meinerzhagen

Appl. Phys. Lett. 71, 3447 (1997); http://dx.doi.org/10.1063/1.120403 (1 page)

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Abstract Unavailable
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
72.20.Ht High-field and nonlinear effects
02.70.Rr General statistical methods
99.10.Cd Errata
FREE

Erratum: “Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array” [Appl. Phys. Lett. 71, 1655 (1997)]

Eiichi Kuramochi, Jiro Temmyo, Toshiaki Tamamura, and Hidehiko Kamada

Appl. Phys. Lett. 71, 3448 (1997); http://dx.doi.org/10.1063/1.120404 (1 page)

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Abstract Unavailable
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
99.10.Cd Errata
FREE

Erratum: “Lattice expansion of Ca and Ar ion implanted GaN” [Appl. Phys. Lett. 71, 2313 (1997)]

C. Liu, B. Mensching, K. Volz, and B. Rauschenbach

Appl. Phys. Lett. 71, 3448 (1997); http://dx.doi.org/10.1063/1.120405 (1 page)

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Abstract Unavailable
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61.72.uj III-V and II-VI semiconductors
99.10.Cd Errata
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