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22 Dec 1997

Volume 71, Issue 25, pp. 3601-3732

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Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

Roberto Paiella, Guido Hunziker, Kerry J. Vahala, and Uzi Koren

Appl. Phys. Lett. 71, 3601 (1997); http://dx.doi.org/10.1063/1.120453 (3 pages) | Cited 1 time

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An experimental technique based on frequency-resolved four-wave mixing is proposed for the investigation of phonon-assisted capture of electrons and holes in electrically pumped semiconductor quantum wells. We show how this technique can be used to directly measure the intrinsic capture lifetime, with no need for involved numerical fits. We also present experimental results from an application of the technique to a multiquantum-well semiconductor optical amplifier. The possible impact of phase matching on the results is discussed. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition

Y. Kim, S. M. Lee, C. S. Park, S. I. Lee, and M. Y. Lee

Appl. Phys. Lett. 71, 3604 (1997); http://dx.doi.org/10.1063/1.120454 (3 pages) | Cited 33 times

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The atomic layer deposition technique has been applied to the growth of Al2O3 thin films on the substrates of Si(100), 100-nm-thick SiO2 covered Si(100) [SiO2/Si(100)], and 90-nm-thick TiN covered SiO2/Si(100). The growth rate of Al2O3 films was 0.19 nm/cycle and identical for all substrates employed under the surface controlled process. However, the optical properties of Al2O3 films were significantly affected by different substrates. The average interband-oscillator energy and refractive index parameter were determined to be 3.330 eV and 2.992×10−14 eV m2 for Al2O3 film grown on Si(100), while those for the film grown on SiO2/Si(100) were 4.492 eV and 2.074×10−14 eV m2, respectively. © 1997 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Nk Insulators
78.40.Ha Other nonmetallic inorganics

High-temperature type-II superlattice diode laser at λ = 2.9 μm

W. W. Bewley, E. H. Aifer, C. L. Felix, I. Vurgaftman, J. R. Meyer, C.-H. Lin, S. J. Murry, D. Zhang, and S. S. Pei

Appl. Phys. Lett. 71, 3607 (1997); http://dx.doi.org/10.1063/1.120455 (3 pages) | Cited 20 times

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A 2.9 μm diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm2 and the quantum efficiency is >15%. The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05% duty cycle. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si (100)

T. Chatterjee, P. J. McCann, X. M. Fang, J. Remington, M. B. Johnson, and C. Michellon

Appl. Phys. Lett. 71, 3610 (1997); http://dx.doi.org/10.1063/1.120456 (3 pages) | Cited 5 times

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Visible electroluminescence (EL) is observed at room temperature by current injection into Eu:CaF2 layers containing 7.5 and 8.0 at. % Eu grown by molecular beam epitaxy on lightly doped (100) p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped samples showing a more pronounced long wavelength tail. Although both metal and indium–tin–oxide (ITO) contacts were successfully used for current injection, the best EL intensity stability was achieved with contacts made of a 100 Å thick Al layer covered by a 2500 Å thick ITO layer. © 1997 American Institute of Physics.
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78.66.Nk Insulators
78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High resolution polarization gratings in liquid crystals

S. Slussarenko, O. Francescangeli, F. Simoni, and Y. Reznikov

Appl. Phys. Lett. 71, 3613 (1997); http://dx.doi.org/10.1063/1.120457 (3 pages) | Cited 33 times

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Efficient recording of polarization gratings in dye-doped liquid crystals is reported. By exploiting the effect of light-induced anchoring of the molecular director, it has been possible to write stable holographic gratings with a diffraction efficiency of 8% at a resolution of 1000 lines/mm. The required surface energy density of 0.3 J/cm2 sets these materials among the most sensitive for optical storage. © 1997 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Ln Holographic recording materials; optical storage media
42.79.Kr Display devices, liquid-crystal devices

Generation of 11 fs pulses tunable across the visible by optical parametric amplification

Giulio Cerullo, Mauro Nisoli, and Sandro De Silvestri

Appl. Phys. Lett. 71, 3616 (1997); http://dx.doi.org/10.1063/1.120458 (3 pages) | Cited 70 times

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We have generated pulses with 11 fs duration, tunable between 500 and 700 nm, using a noncollinear β-barium borate optical parametric amplifier pumped by the second harmonic of a Ti:sapphire laser. © 1997 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Long-wavelength ( ≈ 15.5 μm) unipolar semiconductor laser in GaAs quantum wells

O. Gauthier-Lafaye, P. Boucaud, F. H. Julien, S. Sauvage, S. Cabaret, J.-M. Lourtioz, V. Thierry-Mieg, and R. Planel

Appl. Phys. Lett. 71, 3619 (1997); http://dx.doi.org/10.1063/1.120459 (3 pages) | Cited 73 times

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A unipolar semiconductor laser emitting in the mid-infrared spectral region is demonstrated. The laser scheme relies on a simple three-level system in GaAs/AlGaAs asymmetric coupled quantum wells. Population inversion between excited states is achieved by optical pumping of electrons from the ground state with a CO2 laser. Long-wavelength ( ≈ 15.5 μm) laser emission is demonstrated. The laser is operated in the pulsed regime up to a temperature of 110 K and with an output peak power ≈ 0.4 W at 77 K. Unipolar quantum well semiconductor lasers based on this principle are capable of covering the long wavelength mid-infrared spectral region above 12 μm. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.60.Fc Modulation, tuning, and mode locking

Phase-matched mid-infrared difference frequency generation in GaAs-based waveguides

A. Fiore, V. Berger, E. Rosencher, P. Bravetti, N. Laurent, and J. Nagle

Appl. Phys. Lett. 71, 3622 (1997); http://dx.doi.org/10.1063/1.120460 (3 pages) | Cited 15 times

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We demonstrate difference frequency generation of 4 μm radiation from 1 to 1.32 μm pumps in GaAs-based waveguides. Phase matching is obtained by using form birefringence in selectively oxidized AlGaAs/AlAs multilayers. A tunability over 50 cm−1 around 4 μm is demonstrated by changing the waveguide temperature and one pump wavelength. A much larger tunability may be achieved by using two tunable sources. © 1997 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
78.66.Fd III-V semiconductors
42.79.Gn Optical waveguides and couplers
78.20.Fm Birefringence

Origin of high bandwidth performance of graded-index plastic optical fibers

R. F. Shi, C. Koeppen, G. Jiang, J. Wang, and A. F. Garito

Appl. Phys. Lett. 71, 3625 (1997); http://dx.doi.org/10.1063/1.120461 (3 pages) | Cited 10 times

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Observations in high bandwidth graded-index plastic optical fibers (GI POFs) are reported of strong mode coupling and its characteristic square root-like fiber length dependence of the optical pulse broadening. We have further found that the measured refractive index profile is not parabolic, but consists of two markedly different regions. Analysis of the index profile reveals that strong mode coupling increases the GI POF bandwidth from its profile-determined value of 0.43 GHz to its measured value of 3.0 GHz for 100 m. © 1997 American Institute of Physics.
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42.81.Ht Gradient-index (GRIN) fiber devices
42.81.Dp Propagation, scattering, and losses; solitons
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Piezoelectrical shear-force control on soft biological samples in aqueous solution

R. Brunner, O. Hering, O. Marti, and O. Hollricher

Appl. Phys. Lett. 71, 3628 (1997); http://dx.doi.org/10.1063/1.120462 (3 pages) | Cited 9 times

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In order to apply scanning near-field optical microscopy to life science, it is essential to have an accurate distance feedback that also works on soft biological samples in liquids. In this letter, we report measurements of neuron cells in aqueous solution using an advanced piezoelectrical shear-force detection setup. Simultaneously obtained topographical and fluorescence images are presented, demonstrating a resolution below 100 nm in the optical image. The influence of the water level on the shear-force signal and the interaction between near-field probe and soft organic samples are discussed. Stable feedback in fluids is obtained with tip–sample interaction forces below 100 pN. © 1997 American Institute of Physics.
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87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.80.-y Biophysical techniques (research methods)
87.17.-d Cell processes
07.79.Fc Near-field scanning optical microscopes

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis, and W. V. Lampert

Appl. Phys. Lett. 71, 3631 (1997); http://dx.doi.org/10.1063/1.120463 (3 pages) | Cited 67 times

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The etching behavior of gallium nitride (GaN), aluminum gallium nitride (AlxGa1−xN), and aluminum nitride (AlN) has been systematically examined in an inductively coupled plasma (ICP) using Cl2 and Ar as the reagents. Etch rates were strongly influenced by ICP power and dc bias, while relatively insensitive to pressure, flow rate, and gas composition. Maximum etch rates of 9800 Å/min for GaN, 9060 Å/min for Al0.28Ga0.72N, and 7490 Å/min for AlN were attained. The etch profiles were highly anisotropic over the range of conditions studied. The dc bias had to exceed certain voltages before significant etch rates were obtained. These values were <−20 V for GaN, −40 V for Al0.28Ga0.72N, and >−50 V for AlN. As such, increasing selectivity for GaN over Al0.28Ga0.72N and AlN was achieved at dc biases below −40 V. At −20 V, the GaN etch rates were 38 times greater than AlN and a factor of 10 greater than Al0.28Ga0.72N. These results demonstrate the importance of ion bombardment in the etching of these materials. © 1997 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Enhanced electron attachment to highly excited molecules using a plasma mixing scheme

Lal A. Pinnaduwage, Weixing Ding, and Dennis L. McCorkle

Appl. Phys. Lett. 71, 3634 (1997); http://dx.doi.org/10.1063/1.120464 (3 pages) | Cited 7 times

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We present preliminary results on a glow discharge-based technique to populate highly excited states of molecules using a novel excitation transfer process, and to efficiently produce negative ions via electron attachment to those excited states. © 1997 American Institute of Physics.
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34.80.Lx Recombination, attachment, and positronium formation
31.50.Df Potential energy surfaces for excited electronic states
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.80.Hc Glow; corona

PbTiO3 thin films on Si(100) as potential varistor material

V. R. Palkar, S. C. Purandare, P. R. Apte, R. Pinto, and M. S. Multani

Appl. Phys. Lett. 71, 3637 (1997); http://dx.doi.org/10.1063/1.120465 (3 pages) | Cited 5 times

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We have shown that the aqueous sol derived thin films of PbTiO3 on Si(100) substrate exhibit strong varistor type of behavior for certain annealing conditions. Current–voltage (I–V) characteristics depend upon the processing conditions. The behavior is explained by grain boundary limited conduction model. Since the resistance of the grain boundaries varies with the processing conditions, grain boundaries in all samples do not act as potential barriers to the charge carriers. The film postannealed at 700 °C, possessing high nonlinear coefficient (α) with low breakdown voltage per barrier (Egbl), could be used as a protection device in current-sensitive electronic equipment. © 1997 American Institute of Physics.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
61.72.Mm Grain and twin boundaries
73.61.Le Other inorganic semiconductors
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.30.-z Semiconductor devices
77.22.Jp Dielectric breakdown and space-charge effects

Effect of diamond film quality on tungsten related photoluminescence peaks

S. Lal, S. Liu, S. Gangopadhyay, M. S. Haque, and H. A. Naseem

Appl. Phys. Lett. 71, 3640 (1997); http://dx.doi.org/10.1063/1.120466 (3 pages)

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We have studied a series of polycrystalline diamond films of various qualities grown by arc jet chemical vapor deposition method. We have used continuous wave photoluminescence (PL) to study the intensity, width and emission energy of defects, and study the correlation of these parameters to the quality of the diamond films. Recently, it has been proposed that impurities are more easily incorporated into highly defective films, and thus the defect PL may be used to determine impurity concentration in the films. We find that the intensity of the PL from the 1.735 eV center is easily affected by the quality and may be quenched in poor quality samples, and thus it is not an appropriate marker for defect concentration. We find the center with an emission line at 1.805 eV to be a better candidate for being used as a marker for defect concentration. This center is observed in different quality samples, and its line width and emission energy are not affected by film quality. © 1997 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Hx Other solid inorganic materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Cn Elemental semiconductors

Determination of the glass transition temperature of nonlinear optical planar polymer waveguides by attenuated total reflection spectroscopy

Harald Bock, Stefan Christian, Wolfgang Knoll, and Jan Vydra

Appl. Phys. Lett. 71, 3643 (1997); http://dx.doi.org/10.1063/1.120467 (3 pages) | Cited 2 times

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We present an experimental technique for nondestructive measurement of the glass transition temperature (Tg) of thin nonlinear optical (NLO) polymer films by attenuated total reflection spectroscopy. At Tg the thermal expansion coefficient and temperature dependence of the refractive index ∂n/∂T change discontinuously. This change can be detected with high sensitivity by recording thickness and refractive index of a polymer waveguide coated on a glass/gold substrate as a function of temperature. Measurements were made on various high Tg NLO polymers (Tg up to 170 °C). The resulting Tg values are compared with those determined by differential scanning calorimetry of the bulk material. © 1997 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
42.70.Jk Polymers and organics
65.40.De Thermal expansion; thermomechanical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers

Domain–wall contribution to the piezoelectric response of epitaxial ferroelectric thin films

N. A. Pertsev and A. Yu. Emelyanov

Appl. Phys. Lett. 71, 3646 (1997); http://dx.doi.org/10.1063/1.120468 (3 pages) | Cited 27 times

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Domain–wall contribution to the longitudinal piezoelectric coefficient d33 is calculated theoretically for prepolarized tetragonal ferroelectric thin films epitaxially grown on cubic substrates. To that end, translational vibrations of ferroelastic 90° domain walls induced by a weak measuring electric field are analyzed in the typical case of a laminar c/a/c/a domain structure. The average orthogonal displacement of the film free surface caused by collective domain–wall movements is calculated by the method of effective dislocations. On this base the domain–wall contribution Δd33 to the converse piezoelectric effect is evaluated and shown to be substantial in common heterostructures. © 1997 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
61.72.Lk Linear defects: dislocations, disclinations

The effect of applied strain on the resistance of VO2 thin films

J. M. Gregg and R. M. Bowman

Appl. Phys. Lett. 71, 3649 (1997); http://dx.doi.org/10.1063/1.120469 (3 pages) | Cited 24 times

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Vanadium dioxide thin films have been synthesized by pulsed laser deposition from pure vanadium metal targets. The electrical characteristics of these films were measured as a function of externally applied strain, based on three-point bend geometry. It is observed that strain significantly affects the resistance of the VO2 thin films below their metallic-semiconducting transformation temperature (0.04% in-plane tensile strain causing ∼ 35% reduction in resistance). Moreover, the levels of strain required to cause such resistance changes are well within those which can be produced by many strictive materials. © 1997 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
72.60.+g Mixed conductivity and conductivity transitions
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation

Anri Nakajima, Toshiro Futatsugi, Naoto Horiguchi, and Naoki Yokoyama

Appl. Phys. Lett. 71, 3652 (1997); http://dx.doi.org/10.1063/1.120470 (3 pages) | Cited 21 times

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This letter reports on a simple technique for fabricating Sn nanocrystals in thin SiO2 film using low-energy ion implantation followed by thermal annealing. These Sn nanocrystals have excellent size uniformity and position controllability. Their average diameter is 4.8 nm with a standard deviation of 1.0 nm. Most of the Sn nanocrystals reside at the same depth. The lateral edge-to-edge spacing between neighboring Sn nanocrystals is fairly constant: about 3 nm. A narrow as-implanted ion distribution profile and the effect of the SiO2–Si interface are considered to contribute to the size uniformity and position controllability. The features of these nanocrystals will open up new possibilities for novel devices. © 1997 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.72.up Other materials
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Excitation of edge magnetoplasmons in a two-dimensional electron gas by inductive coupling

E. V. Deviatov, V. T. Dolgopolov, F. I. B. Williams, B. Jager, A. Lorke, J. P. Kotthaus, and A. C. Gossard

Appl. Phys. Lett. 71, 3655 (1997); http://dx.doi.org/10.1063/1.120471 (3 pages) | Cited 5 times

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We apply a novel inductive coupling technique to study edge magnetoplasmons (EMP) in two-dimensional electron gases in the time domain. This technique is mostly appropriated for measurements on gated samples in the low-magnetic-field limit. We obtain time delay, amplitude, and broadening of the EMP as a function of the magnetic field. © 1997 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Boron implantation doping of diamond

B. Ittermann, K. Bharuth-Ram, H. Metzner, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, K. Marbach, P. Meier, D. Peters, H. Thieß, H. Ackermann, H.-J. Stöckmann, and J. P. F. Sellschop

Appl. Phys. Lett. 71, 3658 (1997); http://dx.doi.org/10.1063/1.120472 (3 pages) | Cited 3 times

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Spin polarized 12B nuclei were produced in a 11B(d,p)12B nuclear reaction and recoil implanted into a type Ib diamond sample at doses below 1011 cm−2. β-radiation detected nuclear magnetic resonance spectra were measured directly after implantation at sample temperatures ranging from 300 to 800 K. The polarization asymmetry at the Larmor resonance yielded fractions of boron ions at sites of full tetrahedral symmetry of 12(1)% at 300 K, increasing to 17(2)% at 800 K. It is argued that these boron atoms are incorporated substitutionally by direct replacement collisions during the implantation process. The resonance spectra also showed additional boron at low-symmetry sites. © 1997 American Institute of Physics.
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61.72.up Other materials
81.05.ub Fullerenes and related materials
61.80.Jh Ion radiation effects
76.60.-k Nuclear magnetic resonance and relaxation
61.72.S- Impurities in crystals
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling

Nanoscale field-effect transistors: An ultimate size analysis

F. G. Pikus and K. K. Likharev

Appl. Phys. Lett. 71, 3661 (1997); http://dx.doi.org/10.1063/1.120473 (3 pages) | Cited 54 times

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We have used a simple, analytically solvable model to analyze the characteristics of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10 nm-scale channel length L. The model assumes ballistic dynamics of two-dimensional electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at L ∼ 10 nm, while the conductance modulation remains sufficient for memory applications until L ∼ 4 nm. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Hot hole induced breakdown of thin silicon dioxide films

Takayuki Tomita, Hiroto Utsunomiya, Yoshinari Kamakura, and Kenji Taniguchi

Appl. Phys. Lett. 71, 3664 (1997); http://dx.doi.org/10.1063/1.120474 (3 pages) | Cited 10 times

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Hole induced dielectric breakdown of thin gate oxide films is investigated using substrate hot hole (SHH) injection technique. The breakdown characteristics due to SHH stress differ from the case of Fowler-Nordheim (FN) tunneling current stress; the gate current increases gradually just before the breakdown. Measured hole-fluences-to-breakdown, 2–30 C/cm2, which are much larger than that observed in FN stress, 0.1 C/cm2, depend on hole current density. Moreover, the oxide breakdown due to FN stress is accelerated for the oxides subjected to prior hole injection. © 1997 American Institute of Physics.  
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77.22.Jp Dielectric breakdown and space-charge effects
73.50.Fq High-field and nonlinear effects
73.61.Ng Insulators
77.55.-g Dielectric thin films

Use of nonstoichiometry to form GaAs tunnel junctions

S. Ahmed, M. R. Melloch, E. S. Harmon, D. T. McInturff, and J. M. Woodall

Appl. Phys. Lett. 71, 3667 (1997); http://dx.doi.org/10.1063/1.120475 (3 pages) | Cited 11 times

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A tunnel diode was formed from GaAs containing excess arsenic incorporated by molecular beam epitaxy at reduced substrate temperatures. The incorporation of excess arsenic during growth results in a more efficient incorporation of silicon on donor sites and beryllium on acceptor sites. The better dopant incorporation, along with trap assisted tunneling through deep levels associated with the excess arsenic, results in a tunnel junction with record peak current density of over 1800 A/cm2, zero-bias specific resistance of under 1×10−4 Ω cm, and a room-temperature peak-to-valley current ratio of 28. © 1997 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
61.66.Bi Elemental solids
61.66.Dk Alloys
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination

Koichiro Saga and Takeshi Hattori

Appl. Phys. Lett. 71, 3670 (1997); http://dx.doi.org/10.1063/1.120476 (3 pages) | Cited 19 times

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Organic contaminants adsorbed on the surface of silicon wafers do not always cause the degradation of gate-oxide integrity (GOI) degradation but very little information is available on the ambient atmosphere when wafers are loaded in an oxidation furnace. It has been found in this work that GOI is degraded when wafers having organic contamination are loaded in a nitrogen atmosphere, but that GOI degradation does not occur when the wafers are loaded in an oxygen-containing ambient. In a high-temperature nitrogen atmosphere, carbon remains in silicon dioxides, while in an oxygen-containing ambient, the organic contaminants will be oxidatively degraded and evaporated, so carbon does not remain on the surface. © 1997 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
68.35.Dv Composition, segregation; defects and impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Jp Dielectric breakdown and space-charge effects

Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

R. Gaska, J. W. Yang, A. Osinsky, A. D. Bykhovski, and M. S. Shur

Appl. Phys. Lett. 71, 3673 (1997); http://dx.doi.org/10.1063/1.120477 (3 pages) | Cited 29 times

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We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as 1013 cm−2. A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds
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