Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy

Friedman, D. J.; Kibbler, A. E.; Reedy, R.

doi:doi:10.1063/1.119737

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Persistent photoconductivity in n-type GaN

Persistent photoconductivity has been observed in n-type GaN:Si. The effect is seen at room temperature in both nonoptimally grown films as well as in device quality channel layers. The relaxation dynamics are found to agree with a stretched exponential model of recovery. A comparison between different samples, based upon stretched exponential parameters, Hall measurements, and photoluminescence data is made. The data suggest that the cause of persistent photoconductivity is the same among the ...

Persistent photoconductivity in n-type GaN

We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for ...

We show that the p-type doping of Ga_0.5In_0.5P grown by solid-source molecular beam epitaxy using CBr₄ as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga_0.5In_0.5P into the mid-10¹⁸ holes/cm³ range can be achieved for the as-grown material. © 1997 American Institute of Physics.

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KEYWORDS and PACS

Keywords

gallium compounds, indium compounds, III-V semiconductors, semiconductor epitaxial layers, molecular beam epitaxial growth, semiconductor growth, semiconductor doping, crystal orientation, surface topography, hole density, carbon, GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, MOLECULAR BEAM EPITAXY, CRYSTAL DOPING, CARBON ADDITIONS, PHOSPHORUS ADDITIONS, SUBSTRATES

PACS

81.05.Ea

III-V semiconductors
72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping
68.55.Ln

Defects and impurities: doping, implantation, distribution, concentration, etc.
72.80.Ey

III-V and II-VI semiconductors
73.61.Ey

III-V semiconductors
61.72.uj

III-V and II-VI semiconductors
68.35.B-

Structure of clean surfaces (and surface reconstruction)
73.50.Gr

Charge carriers: generation, recombination, lifetime, trapping, mean free paths