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Appl. Phys. Lett. 71, 1098 (1997); http://dx.doi.org/10.1063/1.119738 (3 pages)
Persistent photoconductivity in n-type GaN
(Received 11 February 1997; accepted 24 June 1997)
© 1997 American Institute of Physics
RELATED DATABASES
KEYWORDS and PACS
Keywords
gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor thin films, CVD coatings, electron traps, GALLIUM NITRIDES, PHOTOCONDUCTIVITY, TEMPERATURE DEPENDENCE, DOPED MATERIALS, THIN FILMS, CHEMICAL VAPOR DEPOSITION, METASTABLE STATES, DECAY
PACS
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III-V semiconductors
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III-V and II-VI semiconductors
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Photoconduction and photovoltaic effects
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Photoconduction and photovoltaic effects
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Charge carriers: generation, recombination, lifetime, and trapping
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Charge carriers: generation, recombination, lifetime, trapping, mean free paths
ARTICLE DATA
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C. Johnson, J. Y. Lin, H. X. Jiang, M. A. Khan, and C. J. Sun, Appl. Phys. Lett. 68, 1808 (1996)APPLAB000068000013001808000001.
D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39, 635 (1977).
H. X. Jiang and J. Y. Lin, Phys. Rev. Lett. 64, 2547 (1990).
P. M. Mooney, J. Appl. Phys. 67, R1 (1990)JAPIAU0000670000030000R1000001.
D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).
C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17 745 (1996).
H. J. Queisser and D. E. Theodorou, Phys. Rev. B 33, 4027 (1986).
N. S. Caswell, P. M. Mooney, S. L. Wright, and P. M. Solomon, Appl. Phys. Lett. 48, 1093 (1986)APPLAB000048000016001093000001.
A. S. Dyssanayake, J. Y. Lin, and H. X. Jiang, Phys. Rev. B 48, 8145 (1993).
D. E. Bliss, D. D. Nolte, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. 56, 1143 (1989)APPLAB000056000012001143000001.
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