• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 71, 1098 (1997); http://dx.doi.org/10.1063/1.119738 (3 pages)

Persistent photoconductivity in n-type GaN

Michèle T. Hirsch, J. A. Wolk, W. Walukiewicz, and E. E. Haller

Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720

(Received 11 February 1997; accepted 24 June 1997)

We report on the spectral and temperature dependence of persistent photoconductivity (PPC) in metal-organic chemical vapor deposition grown unintentionally doped n-type GaN. The PPC effect is detectable up to temperatures of at least 352 K, the highest temperature used in this study. At 77 K, the conduction persists at a level 80% higher than the equilibrium dark conduction for over 104 s after removing the excitation. We have determined the spectral dependence for the optical cross section for PPC and obtain an optical ionization energy of ∼2.7 eV. The temperature dependence of the photoconductivity decay and its nonexponential shape are explained by a distribution of capture barriers with a mean capture barrier of 0.2 eV and a width of ∼26 meV. © 1997 American Institute of Physics.

© 1997 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 73.61.Ey

    III-V semiconductors

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 72.40.+w

    Photoconduction and photovoltaic effects

  • 73.50.Pz

    Photoconduction and photovoltaic effects

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    C. Johnson, J. Y. Lin, H. X. Jiang, M. A. Khan, and C. J. Sun, Appl. Phys. Lett. 68, 1808 (1996)APPLAB000068000013001808000001.

    D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39, 635 (1977).

    H. X. Jiang and J. Y. Lin, Phys. Rev. Lett. 64, 2547 (1990).

    P. M. Mooney, J. Appl. Phys. 67, R1 (1990)JAPIAU0000670000030000R1000001.

    D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).

    C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17 745 (1996).

    H. J. Queisser and D. E. Theodorou, Phys. Rev. B 33, 4027 (1986).

    N. S. Caswell, P. M. Mooney, S. L. Wright, and P. M. Solomon, Appl. Phys. Lett. 48, 1093 (1986)APPLAB000048000016001093000001.

    A. S. Dyssanayake, J. Y. Lin, and H. X. Jiang, Phys. Rev. B 48, 8145 (1993).

    D. E. Bliss, D. D. Nolte, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. 56, 1143 (1989)APPLAB000056000012001143000001.


For access to citing articles, you need to log in.



Close
Google Calendar
ADVERTISEMENT

close