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1 Sep 1997

Volume 71, Issue 9, pp. 1139-1277

Page 2 of 2 Pages Previous Page | Jump to Page

Zero-dimensional excitonic confinement in locally strained Zn1−xCdxSe quantum wells

V. Nikitin, P. A. Crowell, J. A. Gupta, D. D. Awschalom, F. Flack, and N. Samarth

Appl. Phys. Lett. 71, 1213 (1997); http://dx.doi.org/10.1063/1.119854 (3 pages) | Cited 26 times

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We report on the observation of zero-dimensional (0D) excitonic confinement in locally strained Zn1−xCdxSe quantum wells. Strain fields from self-organized CdSe quantum dots are used to locally modulate the band structure of a nearby quantum well in a heterostructure, resulting in confinement in all three dimensions. The 0D nature of excitonic confinement is verified by the observation of sharp lines in photoluminescence (PL) spectra. The temperature dependence of the PL lifetime is markedly different than that of the CdSe quantum dots. High-resolution spectra show that the PL lines from the localized states are split into linearly polarized doublets. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors

S. Giovannini, R. Carluccio, L. Mariucci, A. Pecora, G. Fortunato, C. Reita, F. Plais, and D. Pribat

Appl. Phys. Lett. 71, 1216 (1997); http://dx.doi.org/10.1063/1.119855 (3 pages) | Cited 3 times

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Modifications of noise performances induced by hot-carrier degradation in polycrystalline silicon thin-film transistors, made by excimer laser crystallization, are presented. In particular, the normalized drain current spectral density of these devices shows an evident 1/f behavior, and as the device characteristics are degraded by prolonged bias stressing, the noise performances worsen. Hot-carrier degradation results in the formation of both interface states, that have been evaluated through the analysis of the sheet conductance, as well as of oxide traps near the insulator/semiconductor interface, as evidenced by the 1/f noise measurements. A strong correlation between interface state and oxide trap densities has been found, suggesting a common origin for the generation mechanism of the two types of defects. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena
73.20.At Surface states, band structure, electron density of states
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
73.61.Cw Elemental semiconductors

Bistable GaAs–InGaP triangular-barrier optoelectronic switch

Der-Feng Guo

Appl. Phys. Lett. 71, 1219 (1997); http://dx.doi.org/10.1063/1.119856 (3 pages) | Cited 1 time

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A bistable GaAs–InGaP triangular-barrier optoelectronic switch (TBOS), grown by metalorganic chemical vapor deposition, was fabricated. By introducing avalanche multiplication and carrier confinement into the device operation, S-shaped negative-differential-resistance performances are observed in the current–voltage (I–V) characteristics under normal and reverse operation modes. The TBOS shows a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on the illumination was investigated. The I–V characteristics at different temperatures were also discussed. © 1997 American Institute of Physics.
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85.60.-q Optoelectronic devices
81.05.Ea III-V semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Ht High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects

Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport

Leonard F. Register and Karl Hess

Appl. Phys. Lett. 71, 1222 (1997); http://dx.doi.org/10.1063/1.119857 (3 pages) | Cited 11 times

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The effects of lost phase coherence on carrier capture by semiconductor quantum wells are simulated using Schrödinger Equation Monte Carlo. Results are shown for polar-opticalphonon-induced capture of both electrons and holes, and for both monoenergetic and thermal distributions of incident charge carriers. Results suggest that semiclassical modeling of hole capture may be sufficient, provided that quantum mechanical reflection from the individual heterointerfaces still is taken into account. However, for a quantum well laser optimized to operate at an electron capture resonance, semiclassical calculations blind to the resonance structure would underestimate the capture rate, while Golden-Rule calculations, which assume complete phase coherence, could somewhat overestimate it. © 1997 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.38.-k Polarons and electron-phonon interactions
68.35.Ja Surface and interface dynamics and vibrations

Direct observation of stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers by weak beam dark-field transmission electron microscopy

K. K. Fung, N. Wang, and I. K. Sou

Appl. Phys. Lett. 71, 1225 (1997); http://dx.doi.org/10.1063/1.119858 (3 pages) | Cited 10 times

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Using weak beam dark-field transmission electron microscopy, we have identified, by reference to stacking fault trapezoids, an additional crystal defect, a stacking fault tetrahedron, at the interface of ZnSe/GaAs(001) epilayers. Unlike the other stacking faults which are basically of uniform size, the size of stacking fault tetrahedra can vary by a few times, with a typical value of less than 10 nm. The stacking fault tetrahedron is a closed defect and does not extend very far from the interface. The density of the stacking fault tetrahedra is at least as high as that of the dominant stacking faults trapezoids. © 1997 American Institute of Physics.  
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects

Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates

Min Hong Kim, Cheolsoo Sone, Jae Hyung Yi, and Euijoon Yoon

Appl. Phys. Lett. 71, 1228 (1997); http://dx.doi.org/10.1063/1.119859 (3 pages) | Cited 17 times

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Low temperature GaN buffer layers were grown by remote plasma enhanced metalorganic chemical vapor deposition on various pretreated sapphire substrates. The effects of the initial nitridation of sapphire substrates by rf nitrogen plasma on the subsequent growth mode and the crystallinity of the GaN buffer layers were studied. GaN buffer layers on non-nitridated sapphire substrates showed a three-dimensional island growth mode with rough surfaces and misoriented islands. On the other hand, those grown on nitridated sapphire substrates showed an enhanced two-dimensional growth mode with near-equilibrium truncated hexagonal pyramids. The structural quality of the low temperature GaN buffer layer improved significantly with nitrogen plasma nitridation. © 1997 American Institute of Physics.
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81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Calculation of valence-band offsets of lattice-matched GaInTlP/InP heterostructures and of Schottky barrier heights of metal–GaInTlP contacts

Winfried Mönch

Appl. Phys. Lett. 71, 1231 (1997); http://dx.doi.org/10.1063/1.119860 (3 pages)

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Quaternary Ga0.18(1−y)InyTl0.82(1−y)P alloys are lattice matched with InP and their band gaps were predicted to be direct and to vary from zero width to 1.35 eV, the value of InP. This study calculates the branch points of the interface-induced gap states of the binary compound TlP and of the ternary GaTlP and InTlP as well as some quaternary GaInTlP alloys using an empirical tight-binding approach. Several predictions are made. First, the band lineup of lattice-matched InP/Ga0.18(1−y)InyTl0.82(1−y)P heterostructures is of type I. Second, the conduction-band discontinuities are larger than the valence-band offsets. And third, metal/Ga0.18(1−y)InyTl0.82(1−y)P contacts are naturally ohmic for indium contents y smaller than approximately 0.5. © 1997 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Heterostructure integrated thermionic coolers

Ali Shakouri and John E. Bowers

Appl. Phys. Lett. 71, 1234 (1997); http://dx.doi.org/10.1063/1.119861 (3 pages) | Cited 109 times

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Thermionic emission in heterostructures is proposed for integrated cooling of high power electronic and optoelectronic devices. This evaporative cooling is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode. It is shown that with available high electron mobility and low thermal conductivity materials, and with optimized conduction band offsets in heterostructures, single-stage room temperature cooling of up to 20°–40° over thicknesses of the order of microns is possible. © 1997 American Institute of Physics.
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79.40.+z Thermionic emission
85.60.-q Optoelectronic devices
85.80.Fi Thermoelectric devices

Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun-Wei Tsai, Chun-Yao Huang, Ya-Hsiang Tai, Huang-Chung Cheng, Feng-Cheng Su, Fang-Chen Luo, and Hsing-Chien Tuan

Appl. Phys. Lett. 71, 1237 (1997); http://dx.doi.org/10.1063/1.120435 (3 pages) | Cited 4 times

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A short H2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H2 plasma damage which eventually generated a rough a-Si:H/SiNx interface. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.-b Surface treatments
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.35.Ct Interface structure and roughness
68.35.B- Structure of clean surfaces (and surface reconstruction)

THz oscillations in the emission from a semiconductor microcavity

M. Tsuchiya, M. Koch, J. Shah, T. C. Damen, W. Y. Jan, and J. E. Cunningham

Appl. Phys. Lett. 71, 1240 (1997); http://dx.doi.org/10.1063/1.120413 (3 pages) | Cited 2 times

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We report the observation of ultrafast intensity oscillations in the time resolved optical emission from a semiconductor microcavity resonantly pumped with intense femtosecond pulses. The observed oscillations are pronounced, persist for several picoseconds, and have frequencies varying from 1.4 to 2.7 THz, depending upon the incidence angle of the pump beam. The angular dependence and spectra show that the oscillations result from interference between the pump and surface-normal modes of the microcavity. © 1997 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.47.-p Spectroscopy of solid state dynamics

Efficient route to TlBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TlF as a thallination source

R. J. McNeely, J. A. Belot, B. J. Hinds, T. J. Marks, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf, X. F. Zhang, and D. J. Miller

Appl. Phys. Lett. 71, 1243 (1997); http://dx.doi.org/10.1063/1.119862 (3 pages) | Cited 3 times

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Thin TlBa2Ca2Cu3O9+x films were grown on single crystal (110) LaAlO3 from metal-organic chemical-vapor deposition-derived Ba–Ca–Cu–Ox precursor films employing Ba(hfa)2⋅mep, Ca(hfa)2⋅tet, and Cu(dpm)2 (hfa=hexafluoroacetylacetonate; dpm=dipivaloylmethanate; tet=tetraglyme; mep=methylethylpentaglyme) as the volatile metal sources. Thallination is then accomplished by annealing the precursor films in the presence of a bulk BaO+CaO+CuO+TlF source at 885 °C in flowing O2. The presence of TlF is essential for nucleating the Tl-1223 phase. The resulting Tl-1223 films are nearly phase-pure, highly oriented, epitaxial by x-ray diffraction, and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit a transport measured Tc = 103 K and Jc = 4.4×104 A/cm2 (77 K, 0 T). Magnetic hysteresis measurements yield Jc = 1.9×105 A/cm2 (30 K, 0.01 T) and show considerable flux pinning at low temperatures with Jc = 1.4×105 A/cm2 (5 K, 4.5 T). © 1997 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
74.25.Sv Critical currents
74.10.+v Occurrence, potential candidates
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
61.72.Cc Kinetics of defect formation and annealing
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Photoinduced enhancement of the c-axis conductivity in oxygen-deficient YBa2Cu3Ox thin films

W. Markowitsch, C. Stockinger, W. Lang, K. Bierleutgeb, J. D. Pedarnig, and D. Bäuerle

Appl. Phys. Lett. 71, 1246 (1997); http://dx.doi.org/10.1063/1.119863 (3 pages) | Cited 11 times

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High quality thin films of oxygen-depleted YBa2Cu3Ox (x ≈ 6.6) were prepared by pulsed-laser deposition on SrTiO3, substrates that were cut with tilt angles of 10° and 20° with respect to the [001] direction, resulting in a steplike growth of the layers. The resistance showed a semiconducting behavior along the projection of the c axis to the film surface, but a metallic behavior in the perpendicular direction, indicating that the former is dominated by the c-axis resistivity and the latter by the ab-plane resistivity of YBa2Cu3Ox. Long-term illumination of the samples with a 100 W halogen lamp resulted in a significant conductivity enhancement in both directions. The photoinduced change of the out-of-plane resistance vs temperature characteristics is comparable to the effect of large hydrostatic pressure, introducing structural changes similar to that of photoexcitation. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
73.50.Pz Photoconduction and photovoltaic effects
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
72.40.+w Photoconduction and photovoltaic effects
61.66.Bi Elemental solids
61.66.Dk Alloys
81.15.Fg Pulsed laser ablation deposition
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Retrieval of critical current distribution in small Josephson junctions

O. Nesher and E. N. Ribak

Appl. Phys. Lett. 71, 1249 (1997); http://dx.doi.org/10.1063/1.119864 (3 pages) | Cited 9 times

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We have developed a method to retrieve or to estimate the spatial critical current distribution in a small Josephson junction from a critical current measurement in a magnetic field (the junction size is in reference to the Josephson length). The method is based on an iterative algorithm that uses fast Fourier transform and physical constraints to achieve the proper solution(s). We simulated some typical critical current distributions and the algorithm converged to a single solution. We applied the algorithm to measurements of the critical current of grain boundary junctions of an oxygen deficient YBa2Cu3O7−δ thin film. The convergence was always to one of a very few solutions very similar in nature. © 1997 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents

High quality superconducting tunnel junctions on Nb and Ta single crystals for radiation detection

M. P. Bruijn, F. B. Kiewiet, M. L. van den Berg, O. J. Luiten, P. A. J. de Korte, A. W. Hamster, C. G. S. Brons, and J. Flokstra

Appl. Phys. Lett. 71, 1252 (1997); http://dx.doi.org/10.1063/1.119865 (3 pages) | Cited 3 times

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High quality Nb/Al-based tunnel junctions, fabricated with a superconducting interface onto thick single crystal x-ray absorbers of Nb and Ta are discussed. Current-voltage characteristics, recorded at 0.5 K, show a subgap current which is still dominated by thermally excited quasiparticles. The quality parameter Rsubgap/Rnormal reaches a value of several million, which is unequalled for nonepitaxially sputtered tunnel junctions. The fabrication process and some development steps, such as preparation of ultrasmooth crystal surfaces are described. Observations of x-ray photons absorbed in Nb and Ta single crystals detected by the superconducting tunnel junctions are also presented. © 1997 American Institute of Physics.
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81.15.Cd Deposition by sputtering
81.05.Bx Metals, semimetals, and alloys
74.50.+r Tunneling phenomena; Josephson effects
74.70.-b Superconducting materials other than cuprates
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

High rate dry etching of Ni0.8Fe0.2 and NiFeCo

K. B. Jung, E. S. Lambers, J. R. Childress, S. J. Pearton, M. Jenson, and A. T. Hurst

Appl. Phys. Lett. 71, 1255 (1997); http://dx.doi.org/10.1063/1.119925 (3 pages) | Cited 25 times

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A Cl2/Ar plasma chemistry operated under electron cyclotron resonance (ECR) conditions is found to produce etch rates for NiFe and NiFeCo of ≥ 3000 Å min−1 at ⩽ 80 °C. The etch rates are proportional to ion density and average ion energy over a fairly wide range of conditions. Under the same conditions, fluorine or methane/hydrogen plasma chemistries produce rates lower than the Ar sputter rate. The high ion current under ECR conditions appears to balance NiClx, FeClx, and CoClx etch product formation with efficient ion-assisted desorption, and prevents formation of the usual chlorinated selvedge layer that requires elevated ion etching conditions. Post Cl2-etch removal of surface residues is performed with an in situ H2 plasma exposure. © 1997 American Institute of Physics.
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75.50.Bb Fe and its alloys
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Bx Metals, semimetals, and alloys
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Effect of antiferromagnetic grain size on exchange-coupling field of Cr70Al30/Fe19Ni81 bilayers

Hiroko Uyama, Yoshichika Otani, Kazuaki Fukamichi, Osamu Kitakami, Yutaka Shimada, and Jun-ichi Echigoya

Appl. Phys. Lett. 71, 1258 (1997); http://dx.doi.org/10.1063/1.119866 (3 pages) | Cited 19 times

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The exchange-coupling mechanism of Cr70Al30/Fe19Ni81 bilayer films was investigated in terms of the crystallographic orientation, the interface roughness, and the grain size. The exchange-coupling field Hex appears when the Cr70Al30 layer is thick enough to accommodate an antiferromagnetic domain wall. The value of Hex was found to increase with decreasing the grain size in association with the [110] orientation. This tendency can be explained by considering the exchange-coupling field evaluated from the random field approximation. © 1997 American Institute of Physics.
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75.50.Ee Antiferromagnetics
75.50.Bb Fe and its alloys
75.60.Ch Domain walls and domain structure
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
68.35.Ct Interface structure and roughness
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Nanostructure fabrication in silicon using cesium to pattern a self-assembled monolayer

R. Younkin, K. K. Berggren, K. S. Johnson, M. Prentiss, D. C. Ralph, and G. M. Whitesides

Appl. Phys. Lett. 71, 1261 (1997); http://dx.doi.org/10.1063/1.119867 (3 pages) | Cited 24 times

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This letter describes the formation of nanometer-scale features in a silicon substrate using a self-assembled monolayer (SAM) of octylsiloxane on silicon dioxide as a resist sensitive to a patterned beam of neutral cesium atoms. The mask that patterned the atomic beam was a silicon nitride membrane perforated with nm and μm scale holes, in contact with the substrate surface. In a two-step wet-chemical etching process, the pattern formed in the SAM was transferred first into the SiO2 layer and then into an underlying silicon substrate. This process demonstrated the formation of silicon features with diameter ∼ 60 nm. © 1997 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
81.05.Cy Elemental semiconductors

Controlled morphology of biologically derived metal nanopatterns

Jon T. Moore, Paul D. Beale, Thomas A. Winningham, and Kenneth Douglas

Appl. Phys. Lett. 71, 1264 (1997); http://dx.doi.org/10.1063/1.119868 (3 pages) | Cited 3 times

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We report the ability to control the morphology of nanometer thick Ti oxide films that were created via a parallel nanofabrication process using a two-dimensional protein crystal as a template. Atomic force microscopy was used to examine the evolution of these structures from a periodic array of nanometer-scale dots (nanodots) to a screen containing a periodic array of nanometer-scale holes (nanoscreen) as the film thickness was increased. A Monte Carlo solid-on-solid simulation was then developed to explain the thickness dependence of the morphology as the metal film self-organizes into these nanopatterns. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
87.15.B- Structure of biomolecules

Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films

Jin-Ping Han and T. P. Ma

Appl. Phys. Lett. 71, 1267 (1997); http://dx.doi.org/10.1063/1.119869 (3 pages) | Cited 80 times

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Forming gas annealing causes changes in the remanent polarization (Pr), coercive field (Ec), and leakage current (I) in both PZT [Pb(Zr,Ti)O3] and SBT (SrBi2Ta2O9) samples with a variety of top electrode materials (Pt, Au, Ag, Cu, Ni, and In2O3), and the degree of degradation depends strongly on the top electrode material. These results may be explained by a model that is based on the catalytic activities of the top electrode to dissociate hydrogen molecules into hydrogen atoms, with the latter subsequently migrating into PZT or SBT films to cause oxygen deficiency and its associated property degradation. This model can be expanded to explain the recovery phenomenon resulting from oxygen annealing, which also depends on the catalytic activity of the top electrode to produce atomic oxygen from molecular oxygen. © 1997 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Gh Other heat and thermomechanical treatments
77.22.Ej Polarization and depolarization
61.66.Bi Elemental solids
61.66.Dk Alloys
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Estimation of the second crossover in insulators using the electrostatic mirror in the scanning electron microscope

W. K. Wong, J. C. H. Phang, and J. T. L. Thong

Appl. Phys. Lett. 71, 1270 (1997); http://dx.doi.org/10.1063/1.119870 (3 pages)

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A technique for measuring the second secondary emission crossover in insulators was developed. The method utilizes the behavior of an electrostatic mirror formed on insulating samples to estimate the current equilibrium point as well as the mirror potential. Current results show that the value of the second crossover for glass passivation obtained using this method is in general agreement with previous techniques. © 1997 American Institute of Physics.  
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
87.64.Dz Scanning tunneling and atomic force microscopy
79.20.Hx Electron impact: secondary emission

Electrostatic trapping of single conducting nanoparticles between nanoelectrodes

A. Bezryadin, C. Dekker, and G. Schmid

Appl. Phys. Lett. 71, 1273 (1997); http://dx.doi.org/10.1063/1.119871 (3 pages) | Cited 189 times

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For molecular electronics, one needs the ability to electrically address a single conducting molecule. We report on the fabrication of stable Pt electrodes with a spacing down to 4 nm and demonstrate a new deposition technique, i.e., electrostatic trapping, which can be used to bridge the electrodes in a controlled way with a single conducting nanoparticle such as a conjugated or metal–cluster molecule. In electrostatic trapping, nanoparticles are polarized by an applied electric field and are attracted to the gap between the electrodes where the field is maximum. The feasibility of electrostatic trapping is demonstrated for Pd colloids. Transport measurements on a single Pd nanoparticle show single electron tunneling coexisting with tunnel-barrier suppression.© 1997 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.65.+h Molecular electronic devices
81.15.Rs Spray coating techniques
FREE

Comment on “Phototransformation in visible and near-IR femtosecond pump-probe studies of C60 films” [Appl. Phys. Lett. 69, 296 (1996)]

S. V. Chekalin

Appl. Phys. Lett. 71, 1276 (1997); http://dx.doi.org/10.1063/1.119872 (1 page) | Cited 4 times

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Abstract Unavailable
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology
78.66.Tr Fullerenes and related materials
78.30.Na Fullerenes and related materials
78.40.Ri Fullerenes and related materials
78.47.-p Spectroscopy of solid state dynamics
82.50.-m Photochemistry
FREE

Response to “Comment on ‘Phototransformation in visible and near-IR femtosecond pump-probe studies of C60 films’ ” [Appl. Phys. Lett. 71, 1276 (1997)]

S. B. Fleischer, B. Pevzner, D. J. Dougherty, E. P. Ippen, M. S. Dresselhaus, and A. F. Hebard

Appl. Phys. Lett. 71, 1277 (1997); http://dx.doi.org/10.1063/1.119926 (1 page)

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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.55.-a Thin film structure and morphology
82.50.-m Photochemistry
81.05.ub Fullerenes and related materials
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