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23 Mar 1998

Volume 72, Issue 12, pp. 1409-1518

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n-type delta-doped strained quantum well lasers for improved temperature-dependent performance

O. Buchinsky, M. Blumin, and D. Fekete

Appl. Phys. Lett. 72, 1484 (1998); http://dx.doi.org/10.1063/1.120599 (3 pages) | Cited 11 times

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It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors

Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy

X. H. Shi, P. L. Liu, G. L. Shi, C. M. Hu, Z. H. Chen, S. C. Shen, J. X. Chen, H. P. Xin, and A. Z. Li

Appl. Phys. Lett. 72, 1487 (1998); http://dx.doi.org/10.1063/1.120600 (2 pages) | Cited 2 times

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Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the 1s ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0) metastable state with the bound phonon states (1s+LO) and (2p−1+LO) are clearly observed in high magnetic fields. The results demonstrate the bound phonon in Si-doped InP consists of both electron and phonon via multiphonon processes and there is a resonant interaction between LO phonons and impurity-bound electrons in InP. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions
71.55.Eq III-V semiconductors

Light emission from nanocrystalline Si thin-film light emitting diodes due to tunneling carrier injection

Toshihiko Toyama, Yoshihiro Kotani, Hiroaki Okamoto, and Hirotsugu Kida

Appl. Phys. Lett. 72, 1489 (1998); http://dx.doi.org/10.1063/1.121035 (3 pages) | Cited 8 times

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Electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied by using thin-film light emitting diodes with a structure of glass/SnO2/p-type nc-Si/Al. When positive bias voltages are applied on the SnO2 electrode, light emission from the nc-Si occurs with a peak energy of 1.57 eV at room temperature. When the temperatures is increased from 100–350 K, both the EL and photoluminescence (PL) peak energies shift to red. In addition, both the integrated EL and PL intensity rapidly decrease when the temperatures is increased over 200 K. Considering the similar temperature dependence found on the EL and the PL properties, the EL is attributed to the radiative recombination of electrons injected from the Al electrode and holes in the p-type nc-Si layer. From the analysis of the current–voltage characteristics, electron tunneling at the interface of nc-Si/Al appears to be the most probable mechanism for the electron injection. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Ap Elemental semiconductors
78.60.Fi Electroluminescence
73.40.Gk Tunneling
78.66.Db Elemental semiconductors and insulators

Deactivation in heavily arsenic-doped silicon

M. A. Berding, A. Sher, M. van Schilfgaarde, P. M. Rousseau, and W. E. Spicer

Appl. Phys. Lett. 72, 1492 (1998); http://dx.doi.org/10.1063/1.121036 (3 pages) | Cited 18 times

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We have combined ab initio calculations with a general statistical theory to predict the properties of heavily arsenic-doped silicon. Although we find that a lattice vacancy surrounded by four arsenic (VAs4) is the dominant deactivating complex at high arsenic concentrations in equilibrium, vacancy clusters with fewer arsenic neighbors are present in significant quantities. These smaller complexes are essential not only to the establishment of equilibrium, since SiAs4 clusters are extremely rare, but can also explain deactivation even if VAs4 formation is kinetically inhibited. This suggests that materials with similar arsenic concentration and deactivation fractions can have different microscopic states, and therefore behave differently in subsequent processing. Good agreement is found between theory and experiment for the electronic concentration as a function of temperature and total arsenic concentration. We also show that for low arsenic concentrations, full activation is the equilibrium condition. © 1998 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices

E. Dupont, J. P. McCaffrey, H. C. Liu, M. Buchanan, Rui Q. Yang, C.-H. Lin, D. Zhang, and S. S. Pei

Appl. Phys. Lett. 72, 1495 (1998); http://dx.doi.org/10.1063/1.121037 (3 pages) | Cited 7 times

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We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Generation of millimeter waves with a GaAs/AlAs superlattice oscillator

E. Schomburg, S. Brandl, K. Hofbeck, T. Blomeier, J. Grenzer, A. A. Ignatov, K. F. Renk, D. G. Pavel’ev, Yu. Koschurinov, V. Ustinov, A. Zhukov, A. Kovsch, S. Ivanov, and P. S. Kop’ev

Appl. Phys. Lett. 72, 1498 (1998); http://dx.doi.org/10.1063/1.121038 (3 pages) | Cited 13 times

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We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density domains. The oscillator delivered, at an efficiency of 0.2% for the conversion of electrical power to radiation power, a power of 100 μW in a bandwidth of the order of 200 kHz. © 1998 American Institute of Physics.
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84.30.Ng Oscillators, pulse generators, and function generators
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition

Xiao Tang, Fazla Hossain, Kobchat Wongchotigul, and Michael G. Spencer

Appl. Phys. Lett. 72, 1501 (1998); http://dx.doi.org/10.1063/1.121039 (3 pages) | Cited 43 times

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Cathodoluminescence measurements were performed for carbon doped and undoped aluminum nitride thin films in the temperature range from liquid helium to room temperature. The AlN films were grown on three different substrates: 6H–SiC, 4H–SiC, and sapphire. From these samples, a strong luminescence peak surrounded by two weaker peaks in the near band-edge region, near 6 eV, was observed. For AlN on sapphire, this near band-edge transition can be further resolved into three peaks at 6.11, 5.92, and 5.82 eV. These peaks are believed to be due to exciton recombination. The effects of substrate materials and carbon doping on the exciton peak were discussed. The temperature dependence of the peak position and line width of this transition was also studied. The temperature coefficient of the band-gap energy is estimated to be 0.51 meV/K. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Large optical nonlinearities near the band gap of GaN thin films

T. J. Schmidt, J. J. Song, Y. C. Chang, R. Horning, and B. Goldenberg

Appl. Phys. Lett. 72, 1504 (1998); http://dx.doi.org/10.1063/1.121040 (3 pages) | Cited 14 times

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The interband optical transitions in single-crystal GaN films grown by metal organic chemical vapor deposition have been studied at 10 K and room temperature using nondegenerate nanosecond optical pump-probe techniques. At low temperatures, strong, well-resolved features are seen in the absorption and reflection spectra corresponding to the 1s A and B exciton transitions. These features broaden and decrease in intensity due to the presence of a high density of photoexcited free carriers and are completely absent in the absorption and reflection spectra as the excitation density, Iexc, approaches 3 MW/cm2, resulting in induced transparency in transmission measurements. The absorption spectra also show induced absorption below the band gap as Iexc is increased. Both the observed induced transparency and induced absorption were found to be extremely large, exceeding 4×104 cm−1 as the pump density approaches 3 MW/cm2 at 10 K. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
42.65.-k Nonlinear optics
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Electrical properties of a W-B-N Schottky contact to GaAs

Yong Tae Kim, Chang Woo Lee, and Dong Joon Kim

Appl. Phys. Lett. 72, 1507 (1998); http://dx.doi.org/10.1063/1.121041 (3 pages) | Cited 1 time

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We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 °C, and even after the RTA at 900 °C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts (0.68 eV). Deep level transient spectroscopy and carrier density profile measurements show that the higher barrier height and lower leakage current of the W-B-N/GaAs diode are due to the W-B-N film that suppresses changes of the surface carrier and EL2 trap concentrations after the RTA. © 1998 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Aluminum mediated low temperature growth of crystalline silicon by plasma-enhanced chemical vapor and sputter deposition

Tilo P. Drüsedau, Jürgen Bläsing, and Hubert Gnaser

Appl. Phys. Lett. 72, 1510 (1998); http://dx.doi.org/10.1063/1.121042 (3 pages) | Cited 14 times

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The growth of nanocrystalline silicon on an aluminum underlayer of 4–32 nm thickness on silica substrates by plasma-enhanced chemical vapor deposition (PECVD) or sputter deposition is observed at standard conditions for the preparation of device quality hydrogenated amorphous silicon (substrate temperature of 500 K, deposition rate of 0.5 μm/h). The crystallite size determined by wide angle x-ray scattering ranges from 10 to 30 nm, and the crystallite fraction reaches 25%. The efficiency of aluminum mediated crystallization is about one order of magnitude higher for PECVD films than for sputtered films. Variations of the incident angle of the x rays show that the formation of silicon crystallites takes place at the Al/Si interface. Diffusion of Al into the silicon is enhanced for the PECVD films, whereas it plays a comparatively minor role for sputter deposition. The effect of the aluminum mediated crystallite growth is related to the existence of a metastable aluminum silicide and diffusion processes. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Cd Deposition by sputtering
81.07.-b Nanoscale materials and structures: fabrication and characterization
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.46.-w Structure of nanoscale materials
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Measurement of the static error rate of a storage cell for single magnetic flux quanta, fabricated from high-Tc multilayer bicrystal Josephson junctions

Y. Chong, B. Ruck, R. Dittmann, C. Horstmann, A. Engelhardt, G. Wahl, B. Oelze, and E. Sodtke

Appl. Phys. Lett. 72, 1513 (1998); http://dx.doi.org/10.1063/1.121043 (3 pages) | Cited 6 times

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We measured the static error rate of a high-Tc superconductor dc superconducting quantum interference device (SQUID), which, in the form as a storage loop for single flux quanta, is a basic element of rapid single flux quantum circuits. Using high-Tc multilayer bicrystal technology, we fabricated a stacked dc SQUID pair, one SQUID serving as the storage loop, the other one as the readout device. The escape rate of a stored flux quantum was measured as a function of the bias current at a temperature of 28 K. The measured error rates were in good agreement with a model calculation based on thermally activated barrier crossing. © 1998 American Institute of Physics.
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85.25.Cp Josephson devices
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers

P. J. Burke, R. J. Schoelkopf, D. E. Prober, A. Skalare, B. S. Karasik, M. C. Gaidis, W. R. McGrath, B. Bumble, and H. G. LeDuc

Appl. Phys. Lett. 72, 1516 (1998); http://dx.doi.org/10.1063/1.121044 (3 pages) | Cited 5 times

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A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band). © 1998 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
74.78.-w Superconducting films and low-dimensional structures
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
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