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23 Mar 1998

Volume 72, Issue 12, pp. 1409-1518

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A universal characterization of nonlinear self-oscillation and chaos in various particle-wave-wall interactions

Hae June Lee, Jae Koo Lee, Min Sup Hur, and Yi Yang

Appl. Phys. Lett. 72, 1445 (1998); http://dx.doi.org/10.1063/1.120589 (3 pages) | Cited 10 times

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The comprehensive parameter space of self-oscillation and its period-doubling route to chaos are shown for bounded beam-plasma systems. In this parametrization, it is helpful to use a potentially universal parameter in close analogy with free-electron-laser chaos. A common parameter, which is related to the velocity slippage and the ratio of bounce to oscillation frequencies, is shown to have similar significance for different physical systems. This single parameter replaces the dependences on many input parameters, thus suitable for a simplifying and diagnostic measure of nonlinear dynamical and chaotic phenomena for various systems of particle-wave interactions. The results of independent kinetic simulations verify those of nonlinear fluid simulations. © 1998 American Institute of Physics.
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52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.25.Gj Fluctuation and chaos phenomena
52.40.Mj Particle beam interactions in plasmas
52.40.Hf Plasma-material interactions; boundary layer effects
52.38.Bv Rayleigh scattering; stimulated Brillouin and Raman scattering
05.45.-a Nonlinear dynamics and chaos
52.70.-m Plasma diagnostic techniques and instrumentation
52.65.-y Plasma simulation
52.25.Dg Plasma kinetic equations

Langmuir probe analysis of distributed electron cyclotron resonance silicon nitride deposition plasma

F. Delmotte, M. C. Hugon, B. Agius, A. M. Pointu, and S. Teodoru

Appl. Phys. Lett. 72, 1448 (1998); http://dx.doi.org/10.1063/1.120608 (3 pages) | Cited 3 times

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Single and double Langmuir probe analyses have been realized in the wafer region of an electron cyclotron resonance reactor in its distributed configuration. Results in nitrogen gas have shown unambiguously that two electron populations exist in this region: one with low temperature (about 1–2eV) and high density and the second with higher temperature (about 8 eV) and lower density. Measurements in silicon nitride deposition plasma (nitrogen and silane gases) have been successfully realized and have shown that these two populations are also present. Finally, we try to correlate the plasma parameters (electron temperatures and densities and ions’ energy) to the deposited film parameters (deposition rate and refractive index). © 1998 American Institute of Physics.
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52.70.Ds Electric and magnetic measurements
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
78.66.Nk Insulators
52.25.-b Plasma properties
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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