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23 Mar 1998

Volume 72, Issue 12, pp. 1409-1518

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Gettering of iron by oxygen precipitates

H. Hieslmair, A. A. Istratov, S. A. McHugo, C. Flink, T. Heiser, and E. R. Weber

Appl. Phys. Lett. 72, 1460 (1998); http://dx.doi.org/10.1063/1.120592 (3 pages) | Cited 19 times

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In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen precipitate densities was performed. The number of iron precipitation sites was obtained from the iron precipitation kinetics using Ham’s Law. At low temperatures, the iron precipitate density corresponded to the oxygen precipitate density. A strong temperature dependence of the iron precipitate density was observed for the samples with larger oxygen precipitate densities. These data were used to simulate iron precipitation during a slow cool. From those simulations, optimal cooling rates were obtained for different silicon materials assuming various iron precipitation site densities in the epitaxial layer. © 1998 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Cy Elemental semiconductors
81.65.Tx Gettering
64.75.-g Phase equilibria

Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells

W. Feng, Y. Wang, J. Wang, W. K. Ge, Q. Huang, and J. M. Zhou

Appl. Phys. Lett. 72, 1463 (1998); http://dx.doi.org/10.1063/1.120593 (3 pages) | Cited 7 times

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The low-temperature grown AlGaAs/GaAs multiple quantum well structures were characterized by photoluminescence (PL) spectroscopy. The samples were grown at 270–400 °C and annealed at 500–900 °C. After anneal, photoluminescence quenching was observed for the samples grown at temperatures below 350 °C, and found to show a strong dependence on the growth and anneal temperatures. The luminescence intensity for the PL-quenched sample exhibits a power law dependence on the excitation level with an exponent close to 2, indicating a bimolecular recombination process in parallel with strong nonradiative recombination. The photoluminescence quenching upon anneal is attributed to the formation of arsenic clusters that serve as new nonradiative recombination channels. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.Cc Kinetics of defect formation and annealing

Strain relaxation of InGaAs/GaAs superlattices by wet oxidation of underlying AlAs layer

Jin Ho Seo and Kwang Seok Seo

Appl. Phys. Lett. 72, 1466 (1998); http://dx.doi.org/10.1063/1.120594 (3 pages) | Cited 10 times

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The effects of AlAs wet oxidation on overlayers were investigated using InGaAs/GaAs strained-layer superlattice structures grown on an AlAs layer. The superlattice partially relaxes towards its equilibrium spacing as the result of the oxidation of the underlying AlAs layer. Double-crystal x-ray diffraction measurements were used to determine the degree of strain relaxation. Larger relaxation is observed for the sample with a higher indium composition and a thicker AlAs layer. © 1998 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.Mq Oxidation
68.35.Ct Interface structure and roughness

Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy

John T. Wolan, Charles K. Mount, and Gar B. Hoflund

Appl. Phys. Lett. 72, 1469 (1998); http://dx.doi.org/10.1063/1.120595 (3 pages) | Cited 11 times

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In this study a hyperthermal oxygen atom source has been used to form an oxide layer on an Ar+-sputtered GaAs(001) surface at room temperature, and this layer has been examined using x-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS). XPS data indicate that the Ga in the near-surface region is oxidized predominantly to Ga2O3 with a significant contribution from GaAsO4 while the As is oxidized predominantly to an AsOx species with significant contributions from As2O3 and GaAsO4 and/or As2O5. The oxide layer thickness is estimated to be about 25 Å, and the XPS Ga:As atom ratio increases from 1.1 to 1.6 during the oxidation. The ISS data indicate that the resulting oxide layer formed is more electrically insulating than a native oxide layer on this surface. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Mq Oxidation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

Takashi Sugino, Hideaki Ninomiya, Junji Shirafuji, and Koichiro Matsuda

Appl. Phys. Lett. 72, 1472 (1998); http://dx.doi.org/10.1063/1.120596 (3 pages) | Cited 5 times

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Phosphidization of GaAs surfaces is attempted with phosphine gas photodecomposed by an ArF excimer laser. Electron traps at and near the phosphidized GaAs surfaces are characterized by isothermal capacitance transient spectroscopy measurements. Phosphidization leads to a reduction in the trap (Ec−0.81 eV) known as an EL2 center and generation of two traps (Ec−0.24 eV and Ec−0.49 eV), which are designated as NL1 and NL2, respectively. A significant metal work-function dependence of the barrier height is demonstrated for Schottky junctions formed on the GaAs surfaces phosphidized under optimum condition, suggesting that phosphidization is effective in reducing surface states of GaAs. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Rv Passivation
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

G. Gradinaru, M. Asif Khan, N. C. Kao, T. S. Sudarshan, Q. Chen, and J. Yang

Appl. Phys. Lett. 72, 1475 (1998); http://dx.doi.org/10.1063/1.120597 (3 pages) | Cited 4 times

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Prebreakdown and breakdown effects under high electric fields in AlGaN/GaN heterojunction field effect transistors were studied. In the subthreshold regime, at large drain-to-source voltages (>80 V), along with the gate leakage current, a significant source current was measured. For a wide range of gate-to-source bias voltages in OFF and ON regimes, the breakdown voltage was limited by a rapid buildup of the source current, rather than a process dominated by gate leakage. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
72.20.Ht High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects

Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy

S. Webster, D. N. Batchelder, and D. A. Smith

Appl. Phys. Lett. 72, 1478 (1998); http://dx.doi.org/10.1063/1.120598 (3 pages) | Cited 54 times

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A scanning near-field optical microscope (SNOM) has been constructed that is capable of recording Raman spectra with a spatial resolution of ∼ 150 nm. The SNOM has been used to produce a combined topological and Raman map of a plastically deformed area of a silicon wafer. The variation of the frequency of the 520 cm−1 Raman band with position has been used to estimate the residual stresses associated with the deformation. The measurements demonstrate the feasibility of nondestructive, submicron stress measurement in semiconductors by near-field Raman spectroscopy. © 1998 American Institute of Physics.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
78.30.Am Elemental semiconductors and insulators
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
07.79.Fc Near-field scanning optical microscopes

Valence intersubband lasers with inverted light-hole effective mass

G. Sun, Y. Lu, and J. B. Khurgin

Appl. Phys. Lett. 72, 1481 (1998); http://dx.doi.org/10.1063/1.120610 (3 pages) | Cited 17 times

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We propose a novel intersubband laser based on transition between the ground-state heavy-hole subband (HH1) and light-hole subband (LH1) in a k-space region where the light-hole effective mass is inverted. The laser structure can be electrically pumped with a simple quantum cascade scheme. Our calculation shows that with only a small fraction of the carrier population in the upper subband (LH1), it is possible to achieve population inversion between the two subbands locally in K space where the light-hole effective mass is inverted. Optical gain in excess of 150/cm can be achieved with a pumping current density on the order to 100 A/cm2 at the temperature of liquid nitrogen. © 1998 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

n-type delta-doped strained quantum well lasers for improved temperature-dependent performance

O. Buchinsky, M. Blumin, and D. Fekete

Appl. Phys. Lett. 72, 1484 (1998); http://dx.doi.org/10.1063/1.120599 (3 pages) | Cited 11 times

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It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors

Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy

X. H. Shi, P. L. Liu, G. L. Shi, C. M. Hu, Z. H. Chen, S. C. Shen, J. X. Chen, H. P. Xin, and A. Z. Li

Appl. Phys. Lett. 72, 1487 (1998); http://dx.doi.org/10.1063/1.120600 (2 pages) | Cited 2 times

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Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the 1s ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0) metastable state with the bound phonon states (1s+LO) and (2p−1+LO) are clearly observed in high magnetic fields. The results demonstrate the bound phonon in Si-doped InP consists of both electron and phonon via multiphonon processes and there is a resonant interaction between LO phonons and impurity-bound electrons in InP. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions
71.55.Eq III-V semiconductors

Light emission from nanocrystalline Si thin-film light emitting diodes due to tunneling carrier injection

Toshihiko Toyama, Yoshihiro Kotani, Hiroaki Okamoto, and Hirotsugu Kida

Appl. Phys. Lett. 72, 1489 (1998); http://dx.doi.org/10.1063/1.121035 (3 pages) | Cited 8 times

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Electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied by using thin-film light emitting diodes with a structure of glass/SnO2/p-type nc-Si/Al. When positive bias voltages are applied on the SnO2 electrode, light emission from the nc-Si occurs with a peak energy of 1.57 eV at room temperature. When the temperatures is increased from 100–350 K, both the EL and photoluminescence (PL) peak energies shift to red. In addition, both the integrated EL and PL intensity rapidly decrease when the temperatures is increased over 200 K. Considering the similar temperature dependence found on the EL and the PL properties, the EL is attributed to the radiative recombination of electrons injected from the Al electrode and holes in the p-type nc-Si layer. From the analysis of the current–voltage characteristics, electron tunneling at the interface of nc-Si/Al appears to be the most probable mechanism for the electron injection. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Ap Elemental semiconductors
78.60.Fi Electroluminescence
73.40.Gk Tunneling
78.66.Db Elemental semiconductors and insulators

Deactivation in heavily arsenic-doped silicon

M. A. Berding, A. Sher, M. van Schilfgaarde, P. M. Rousseau, and W. E. Spicer

Appl. Phys. Lett. 72, 1492 (1998); http://dx.doi.org/10.1063/1.121036 (3 pages) | Cited 18 times

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We have combined ab initio calculations with a general statistical theory to predict the properties of heavily arsenic-doped silicon. Although we find that a lattice vacancy surrounded by four arsenic (VAs4) is the dominant deactivating complex at high arsenic concentrations in equilibrium, vacancy clusters with fewer arsenic neighbors are present in significant quantities. These smaller complexes are essential not only to the establishment of equilibrium, since SiAs4 clusters are extremely rare, but can also explain deactivation even if VAs4 formation is kinetically inhibited. This suggests that materials with similar arsenic concentration and deactivation fractions can have different microscopic states, and therefore behave differently in subsequent processing. Good agreement is found between theory and experiment for the electronic concentration as a function of temperature and total arsenic concentration. We also show that for low arsenic concentrations, full activation is the equilibrium condition. © 1998 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices

E. Dupont, J. P. McCaffrey, H. C. Liu, M. Buchanan, Rui Q. Yang, C.-H. Lin, D. Zhang, and S. S. Pei

Appl. Phys. Lett. 72, 1495 (1998); http://dx.doi.org/10.1063/1.121037 (3 pages) | Cited 7 times

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We demonstrate the cascade process in mid-infrared electroluminescent InAs/GaInSb/AlSb multi-quantum-well devices. We report the proportional relation between the emitted optical power and the number of periods. This observed scaling is associated with the sequential transport of electrons from one active region to the next situated downstream in potential energy through the injection region. Deviations from this exact scaling are correlated with the variation of the wafer-to-wafer structural quality. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Generation of millimeter waves with a GaAs/AlAs superlattice oscillator

E. Schomburg, S. Brandl, K. Hofbeck, T. Blomeier, J. Grenzer, A. A. Ignatov, K. F. Renk, D. G. Pavel’ev, Yu. Koschurinov, V. Ustinov, A. Zhukov, A. Kovsch, S. Ivanov, and P. S. Kop’ev

Appl. Phys. Lett. 72, 1498 (1998); http://dx.doi.org/10.1063/1.121038 (3 pages) | Cited 13 times

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We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density domains. The oscillator delivered, at an efficiency of 0.2% for the conversion of electrical power to radiation power, a power of 100 μW in a bandwidth of the order of 200 kHz. © 1998 American Institute of Physics.
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84.30.Ng Oscillators, pulse generators, and function generators
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition

Xiao Tang, Fazla Hossain, Kobchat Wongchotigul, and Michael G. Spencer

Appl. Phys. Lett. 72, 1501 (1998); http://dx.doi.org/10.1063/1.121039 (3 pages) | Cited 43 times

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Cathodoluminescence measurements were performed for carbon doped and undoped aluminum nitride thin films in the temperature range from liquid helium to room temperature. The AlN films were grown on three different substrates: 6H–SiC, 4H–SiC, and sapphire. From these samples, a strong luminescence peak surrounded by two weaker peaks in the near band-edge region, near 6 eV, was observed. For AlN on sapphire, this near band-edge transition can be further resolved into three peaks at 6.11, 5.92, and 5.82 eV. These peaks are believed to be due to exciton recombination. The effects of substrate materials and carbon doping on the exciton peak were discussed. The temperature dependence of the peak position and line width of this transition was also studied. The temperature coefficient of the band-gap energy is estimated to be 0.51 meV/K. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Large optical nonlinearities near the band gap of GaN thin films

T. J. Schmidt, J. J. Song, Y. C. Chang, R. Horning, and B. Goldenberg

Appl. Phys. Lett. 72, 1504 (1998); http://dx.doi.org/10.1063/1.121040 (3 pages) | Cited 14 times

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The interband optical transitions in single-crystal GaN films grown by metal organic chemical vapor deposition have been studied at 10 K and room temperature using nondegenerate nanosecond optical pump-probe techniques. At low temperatures, strong, well-resolved features are seen in the absorption and reflection spectra corresponding to the 1s A and B exciton transitions. These features broaden and decrease in intensity due to the presence of a high density of photoexcited free carriers and are completely absent in the absorption and reflection spectra as the excitation density, Iexc, approaches 3 MW/cm2, resulting in induced transparency in transmission measurements. The absorption spectra also show induced absorption below the band gap as Iexc is increased. Both the observed induced transparency and induced absorption were found to be extremely large, exceeding 4×104 cm−1 as the pump density approaches 3 MW/cm2 at 10 K. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
42.65.-k Nonlinear optics
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Electrical properties of a W-B-N Schottky contact to GaAs

Yong Tae Kim, Chang Woo Lee, and Dong Joon Kim

Appl. Phys. Lett. 72, 1507 (1998); http://dx.doi.org/10.1063/1.121041 (3 pages) | Cited 1 time

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We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 °C, and even after the RTA at 900 °C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts (0.68 eV). Deep level transient spectroscopy and carrier density profile measurements show that the higher barrier height and lower leakage current of the W-B-N/GaAs diode are due to the W-B-N film that suppresses changes of the surface carrier and EL2 trap concentrations after the RTA. © 1998 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Aluminum mediated low temperature growth of crystalline silicon by plasma-enhanced chemical vapor and sputter deposition

Tilo P. Drüsedau, Jürgen Bläsing, and Hubert Gnaser

Appl. Phys. Lett. 72, 1510 (1998); http://dx.doi.org/10.1063/1.121042 (3 pages) | Cited 14 times

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The growth of nanocrystalline silicon on an aluminum underlayer of 4–32 nm thickness on silica substrates by plasma-enhanced chemical vapor deposition (PECVD) or sputter deposition is observed at standard conditions for the preparation of device quality hydrogenated amorphous silicon (substrate temperature of 500 K, deposition rate of 0.5 μm/h). The crystallite size determined by wide angle x-ray scattering ranges from 10 to 30 nm, and the crystallite fraction reaches 25%. The efficiency of aluminum mediated crystallization is about one order of magnitude higher for PECVD films than for sputtered films. Variations of the incident angle of the x rays show that the formation of silicon crystallites takes place at the Al/Si interface. Diffusion of Al into the silicon is enhanced for the PECVD films, whereas it plays a comparatively minor role for sputter deposition. The effect of the aluminum mediated crystallite growth is related to the existence of a metastable aluminum silicide and diffusion processes. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Cd Deposition by sputtering
81.07.-b Nanoscale materials and structures: fabrication and characterization
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.46.-w Structure of nanoscale materials
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