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Applied Physics Letters / Volume 72 / Issue 14 / SEMICONDUCTORS

Appl. Phys. Lett. 72, 1745 (1998); http://dx.doi.org/10.1063/1.121171 (3 pages)

Two-dimensional electron gas formed in a back-gated undoped heterostructure

Y. Hirayama, K. Muraki, and T. Saku

NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

(Received 3 December 1997; accepted 9 February 1998)

By using a back-gate operation, a high-quality two-dimensional electron gas (2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3×106 cm2/V s at 1.6 K is obtained for the structure without any compensating surface doping. The electron density is controllable down to 7×109 cm−2. The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density. © 1998 American Institute of Physics.

© 1998 American Institute of Physics

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KEYWORDS and PACS

Keywords

two-dimensional electron gas, gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, electron density, electron mobility

PACS

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 73.61.Ey

    III-V semiconductors

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.121171

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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