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6 Apr 1998

Volume 72, Issue 14, pp. 1667-1789

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The investigation of the relaxation processes in antiferroelectric liquid crystals by electro-optic spectroscopy

Yu. P. Panarin, O. Kalinovskaya, and J. K. Vij

Appl. Phys. Lett. 72, 1667 (1998); http://dx.doi.org/10.1063/1.121147 (3 pages) | Cited 32 times

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Electrooptic spectroscopy of an antiferroelectric liquid crystal is carried out over a range of frequencies from 1 Hz to 100 kHz. In the antiferroelectric SmCA phase two relaxation processes are found, one at the fundamental frequency of a mode and the second at twice the frequency of a different mode. A comparison of the results of the electro-optic spectroscopy with a theoretical study of the motion of the director of an antiferroelectric helix subject to a weak alternating field enables a determination of the origin of the relaxation processes in antiferroelectric phases. © 1998 American Institute of Physics.
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77.22.Gm Dielectric loss and relaxation
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
83.80.Xz Liquid crystals: nematic, cholesteric, smectic, discotic, etc.
78.20.Jq Electro-optical effects

Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots

L. A. Graham, D. L. Huffaker, Q. Deng, and D. G. Deppe

Appl. Phys. Lett. 72, 1670 (1998); http://dx.doi.org/10.1063/1.121148 (3 pages) | Cited 17 times

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Controlled spontaneous lifetimes are demonstrated in InGaAlAs/GaAs quantum dots confined in planar microcavities. Due to their independent and spectrally sharp light emission, the quantum dot emitters provide an excellent means for studying the spontaneous lifetime dependence on microcavity tuning, while maintaining experimental parameters such as temperature and pump intensity constant. The measured lifetime changes are compared with calculated results and show good agreement. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors

A low pressure mercury vapor resonance ionization image detector

O. I. Matveev, B. W. Smith, and J. D. Winefordner

Appl. Phys. Lett. 72, 1673 (1998); http://dx.doi.org/10.1063/1.121149 (3 pages) | Cited 5 times

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Narrow-band spectrally selective image detection based upon the resonance ionization of mercury atoms in a low pressure cell is described. Image dimensions and intensities were measured versus the wavelength of ionizing laser radiation and the dependence upon the voltage applied to electrodes was studied. The position sensitive image of the electron beam, created by two-step resonance photoionization of mercury, was studied when the detected laser beam was scanned spatially. A distorting influence of space charge due to positive mercury ions on the electron beam image was observed. Means of eliminating these distortions are discussed. © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
32.80.Fb Photoionization of atoms and ions

Transmissive properties of Ag/MgF2 photonic band gaps

Mark J. Bloemer and Michael Scalora

Appl. Phys. Lett. 72, 1676 (1998); http://dx.doi.org/10.1063/1.121150 (3 pages) | Cited 100 times

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We present results of transmittance measurements on periodic layers of Ag/MgF2 at optical and microwave frequencies. These one-dimensional, photonic band gap materials exhibit transparency bands at optical frequencies and a huge stop band that extends throughout the near-IR to microwave frequencies and beyond. A unique feature of these metal/dielectric photonic band gap (MD–PBG) materials is that the overall transmittance in the pass band may increase as more periods are deposited. The center frequency, width, and sharpness of the pass bands are adjustable and generally depend on the thickness of the layers and the number of Ag/MgF2 periods. These simple periodic structures have applications as sensor and eye protection devices, heat reflecting windows, ultraviolet blocking films, and transparent electrodes for light emitting diodes and liquid crystal displays. © 1998 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.30.-j Infrared and Raman spectra
78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Thermally stable high-gain photorefractive polymer composites based on a tri-functional chromophore

E. Hendrickx, J. Herlocker, J. L. Maldonado, S. R. Marder, B. Kippelen, A. Persoons, and N. Peyghambarian

Appl. Phys. Lett. 72, 1679 (1998); http://dx.doi.org/10.1063/1.121187 (3 pages) | Cited 26 times

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We report on the photorefractive properties of thermally stable polymer composites based on the dye 2, N, N-dihexylamino-7-dicyanomethylidenyl-3,4,5,6,10-pentahydronaphthalene. At an applied field of 50 V/μm, we have achieved a dynamic range of Δn = 8.5×10−3 and a net two-beam coupling gain of 202 cm−1. The diffraction efficiency peaks at an applied field of 28 V/μm, giving an external diffraction efficiency of 71%. © 1998 American Institute of Physics.
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78.20.-e Optical properties of bulk materials and thin films
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
81.05.Qk Reinforced polymers and polymer-based composites
42.25.Fx Diffraction and scattering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects
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