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6 Apr 1998

Volume 72, Issue 14, pp. 1667-1789

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Quantitative topographic imaging using a near-field scanning microwave microscope

C. P. Vlahacos, D. E. Steinhauer, S. K. Dutta, B. J. Feenstra, Steven M. Anlage, and F. C. Wellstood

Appl. Phys. Lett. 72, 1778 (1998); http://dx.doi.org/10.1063/1.121182 (3 pages) | Cited 15 times

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We describe a technique for extracting topographic information using a scanning near-field microwave microscope. By monitoring the shift of the system’s resonant frequency, we obtain quantitative topographic images of uniformly conducting metal surfaces. At a frequency of 9.572 GHz, our technique allows a height discrimination of about 55 nm at a separation of 30 μm. We present topographic images of uneven, conducting samples and compare the height response and sensitivity of the system with theoretical expectations. © 1998 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Fc Near-field scanning optical microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)

Alkanethiol self-assembled monolayers as the dielectric of capacitors with nanoscale thickness

Maria A. Rampi, Olivier J. A. Schueller, and George M. Whitesides

Appl. Phys. Lett. 72, 1781 (1998); http://dx.doi.org/10.1063/1.121183 (3 pages) | Cited 82 times

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Alkanethiol self-assembled monolayers (SAMs) on a mercury surface are used to build a junction consisting of two opposing mercury surfaces with interposed SAMs: Hg-SAM/SAM-Hg. The liquid mercury surface provides a support for the SAM that is smooth, compliant, free of defects, and without the incommensurate lattice properties that characterize solid metal surfaces. The thickness of the dielectric ( ∼ 30–90 Å) in this junction can be easily changed by using alkanethiols with different lengths. From capacitance measurements, a dielectric constant of 2.7±0.3 is calculated for the SAMs. The conductivity of SAMs on the Hg surface is σ = 6±2×10−15 Ω−1 cm−1, a value close to that of bulk polyethylene. The junction sustains an electric field of 6 MV/cm. © 1998 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
77.84.Jd Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)

Capacitance–voltage characteristics of Bi4Ti3O12/p-Si interface

Liwei Fu, Kun Liu, Bo Zhang, Junhao Chu, Hong Wang, and Min Wang

Appl. Phys. Lett. 72, 1784 (1998); http://dx.doi.org/10.1063/1.121184 (3 pages) | Cited 9 times

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Electrical properties of the interface between Bi4Ti3O12 ferroelectric film and p-Si substrate have been studied by capacitance–voltage (C–V) characteristics. It is found that the interface barrier can be broken down temporally because of the charge injection from Si substrate into the ferroelectric thin film, and this charge injection behavior induces hump and valley structures in the C–V curves. It is also found that the polarization in the Bi4Ti3O12 film is aligned along a preferential direction from semiconductor to ferroelectric thin film, which is attributed to the ferroelectric/p-Si contact. © 1998 American Institute of Physics.
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77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Cw Elemental semiconductors
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering

Huei-Mei Tsai, Pang Lin, and Tseung-Yuen Tseng

Appl. Phys. Lett. 72, 1787 (1998); http://dx.doi.org/10.1063/1.120571 (3 pages) | Cited 31 times

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Ferroelectric Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films on a Pt/SiO2/Si substrate were prepared by using two-target off-axis radio frequency magnetron sputtering, and their structural and electrical properties were investigated. The films crystallized with high (115) diffraction intensity at a substrate temperature of 600 °C, and showed columnar microstructure. The 600 °C sputtered films with a thickness of 440 nm exhibited remanent polarization (2Pr) of 52 μC/cm2 and coercive field (2Ec) 28 kV/cm at an applied voltage of 1.5 V. The leakage current density was about 6×10−6 A/cm2 at an electric field of 50 kV/cm. The films demonstrated fatigue free characteristics up to 1.0×1010 switching cycles under a 3 V bipolar 1 MHz square wave. © 1998 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
61.72.-y Defects and impurities in crystals; microstructure
77.80.Fm Switching phenomena
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