APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Apr 1998

Volume 72, Issue 14, pp. 1667-1789

Return to All Sections
back to top
RSS Feeds

Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

R. D. Chang, P. S. Choi, D. L. Kwong, D. Wristers, and P. K. Chu

Appl. Phys. Lett. 72, 1709 (1998); http://dx.doi.org/10.1063/1.121159 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Boron segregation in an implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It was found that both the implant damage created by arsenic implantation and arsenic deactivation enhance the diffusion of the embedded boron layer toward the shallow As implanted profile. The segregation phenomenon was observed in both 650 °C furnace annealed (FA) and 1000 °C rapid thermally annealed (RTA) samples. For the 650 °C FA sample, the boron segregation peak was located at the junction formed by implanted As, where residual dislocation loops at the original amorphous/crystalline (a/c) interface were also observed. However, no a/c interface dislocation loops were found to be present for the RTA samples. Additional anomalous boron segregation was observed for the 1000 °C RTA+750 °C FA samples. The additional boron segregation is not correlated with defect layers. It is, therefore, concluded that the anomalous boron segregation is caused by the electric field resulting from the formation of a p-n junction. © 1998 American Institute of Physics.
Show PACS
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots

B. R. A. Neves, M. S. Andrade, W. N. Rodrigues, G. A. M. Sáfar, M. V. B. Moreira, and A. G. de Oliveira

Appl. Phys. Lett. 72, 1712 (1998); http://dx.doi.org/10.1063/1.121160 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we present an atomic force microscopy study of a series of Te-mediated InAs/GaAs samples with InAs coverage ranging from 1.5 to 3 monolayers. We were able to directly identify the growth mode transition and the mechanism of relaxed island formation. At the limit of coherent growth mode, strained quantum dots aggregate, forming twin quantum dots (TQDs), which are structures of two, or more, dots virtually bonded together, separated by less than 3 nm. The onset of the incoherent mode is then unambiguously characterized by the coalescence of individual TQDs forming initially small, and then larger, relaxed islands. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace

Noriyuki Miyata, Heiji Watanabe, and Masakazu Ichikawa

Appl. Phys. Lett. 72, 1715 (1998); http://dx.doi.org/10.1063/1.121161 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
SiO2/Si(111) interfaces formed by a furnace oxidation are studied by a scanning reflection electron microscopy (SREM). SREM observation indicates that the initial atomic steps on a Si(111) surface are preserved at the SiO2/Si interface and the interfacial steps do not move laterally even after 48-nm-thick oxidation. A profile analysis of reflection high-energy electron diffraction shows that the SiO2/Si interface consists of islands which have a diameter of about 5 nm and monolayer depth. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation proceeds under furnace oxidation. © 1998 American Institute of Physics.
Show PACS
68.35.Ct Interface structure and roughness
81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald

Appl. Phys. Lett. 72, 1718 (1998); http://dx.doi.org/10.1063/1.121162 (3 pages) | Cited 179 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us to grow a relaxed graded buffer to 100% Ge without the increase in threading dislocation density normally observed in thick graded structures. This sample has been characterized by transmission electron microscopy, etch-pit density, atomic force microscopy, Nomarski optical microscopy, and triple-axis x-ray diffraction. Compared to other relaxed graded buffers in which CMP was not implemented, this sample exhibits improvements in threading dislocation density and surface roughness. We have also made process modifications in order to eliminate particles due to gas-phase nucleation and cracks due to thermal mismatch strain. We have achieved relaxed Ge on Si with a threading dislocation density of 2.1×106 cm−2, and we expect that further process refinements will lead to lower threading dislocation densities on the order of bulk Ge substrates. © 1998 American Institute of Physics.
Show PACS
81.05.Cy Elemental semiconductors
61.72.Lk Linear defects: dislocations, disclinations
81.65.Ps Polishing, grinding, surface finishing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.Cf Surface cleaning, etching, patterning
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Electrical and physical characterization of deuterium sinter on submicron devices

H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey

Appl. Phys. Lett. 72, 1721 (1998); http://dx.doi.org/10.1063/1.121163 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The impact of a deuterium (D2) sinter under two different annealing conditions, 450 °C/60 min and 450 °C/90 min, was studied and compared to the traditional forming gas (FG) sinter. Channel hot carrier (CHC) measurements indicated that while the D2 sinter for 60 min improves the lifetime of the devices by 10× over the FG sinter, an additional increase in the D2 anneal time actually has a negative impact on lifetime. DC current–voltage measurements also showed that samples sintered in D2 ambient for 60 min were the least prone to degradation under stress. Gated diode results showed no appreciable amount of difference in the initial interface state density among the different samples. Secondary ion mass spectroscopy indicated that neither poly nor salicide appears to be a complete barrier to D2 diffusion. © 1998 American Institute of Physics.
Show PACS
81.05.Cy Elemental semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
66.30.J- Diffusion of impurities
72.20.Ht High-field and nonlinear effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Cn Elemental semiconductors

Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont

Appl. Phys. Lett. 72, 1724 (1998); http://dx.doi.org/10.1063/1.121164 (3 pages) | Cited 34 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate a new type of magnetoresistance (MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagnetic grating defined on the surface of the device. We observe an increase in resistance of up to ∼ 1500% at a temperature of 4 K and ∼ 1% at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR. © 1998 American Institute of Physics.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
75.47.De Giant magnetoresistance
73.61.At Metal and metallic alloys
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

Huajie Chen, R. M. Feenstra, R. S. Goldman, C. Silfvenius, and G. Landgren

Appl. Phys. Lett. 72, 1727 (1998); http://dx.doi.org/10.1063/1.121165 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Strain-compensated InGaAsP/InGaP superlattices are studied in cross section by atomic force microscopy and scanning tunneling microscopy. Undulations in the morphology of the {110} cross-sectional faces are observed, and are attributed to elastic relaxation of this surface due to underlying strain arising from thickness and compositional variations of the superlattice layers. Finite element computations are used to extract a quantitative measure of the strain variation. © 1998 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
62.20.-x Mechanical properties of solids
68.35.Gy Mechanical properties; surface strains

Phase separation in InGaN/GaN multiple quantum wells

M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour, N. M. Johnson, and S. Brennan

Appl. Phys. Lett. 72, 1730 (1998); http://dx.doi.org/10.1063/1.121166 (3 pages) | Cited 97 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. © 1998 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
64.75.-g Phase equilibria
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.40.Fy Semiconductors

Acoustically driven bound exciton lifetimes in CdS crystals

O. A. Korotchenkov and T. Goto

Appl. Phys. Lett. 72, 1733 (1998); http://dx.doi.org/10.1063/1.121167 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The exciton lifetime has been found to be repeatedly tuned by a MHz frequency acoustic driving without degradation of the optical properties of CdS crystals. The increase in the lifetime, up to 5%, followed by its ∼20% decrease has been detected with increasing driving amplitude. The lifetime increase can now be understood as due to reduction in the electron-hole wave function overlap in electric fields generated by the driving. The decrease in the recombination lifetime is ascribed to a widening of the potential well trapping the exciton due to variations in the local-crystal environment at acoustic driving. © 1998 American Institute of Physics.
Show PACS
71.35.Ee Electron-hole drops and electron-hole plasma
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hideki Hirayama, Satoru Tanaka, Peter Ramvall, and Yoshinobu Aoyagi

Appl. Phys. Lett. 72, 1736 (1998); http://dx.doi.org/10.1063/1.121168 (3 pages) | Cited 57 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using “antisurfactant” silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼ 10 nm and ∼ 5 nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of InxGa1−xN QDs is controlled from x = ∼ 0.22 to ∼ 0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs. © 1998 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Inhomogeneous strain in individual quantum dots probed by transport measurements

C. D. Akyüz, A. Zaslavsky, L. B. Freund, D. A. Syphers, and T. O. Sedgwick

Appl. Phys. Lett. 72, 1739 (1998); http://dx.doi.org/10.1063/1.121169 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resonant tunneling measurements are used to probe the inhomogeneous strain in individual SiGe quantum dots. Current–voltage characteristics of strained Si/SiGe resonant tunneling diodes of diameter D ⩽ 0.25 μm exhibit additional fine quasi-periodic structure in the resonant peaks. The fine structure is consistent with lateral quantization in the SiGe quantum well due to in-plane confining potentials arising from inhomogeneous strain, which we calculate by finite element techniques for various D. Quenching of the fine structure by a magnetic field is consistent with the effective length scale of the strain-induced potential. © 1998 American Institute of Physics.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.61.Le Other inorganic semiconductors
73.23.-b Electronic transport in mesoscopic systems
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Cw Elemental semiconductors

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

P. Ruterana, G. Nouet, W. Van der Stricht, I. Moerman, and L. Considine

Appl. Phys. Lett. 72, 1742 (1998); http://dx.doi.org/10.1063/1.121170 (3 pages) | Cited 56 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A diffraction analysis in the transmission electron microscope was carried out on InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy on top of thick GaN buffer layers. It is found that the ternary InxGa1−xN layers can be chemically ordered. The In and Ga atoms occupy, respectively, the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P63 mc symmetry group of the wurtzite GaN. The symmetry of the ordered ternary is subsequently lowered by the disappearance of these operations, and it is shown to agree with the P3ml space group. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Two-dimensional electron gas formed in a back-gated undoped heterostructure

Y. Hirayama, K. Muraki, and T. Saku

Appl. Phys. Lett. 72, 1745 (1998); http://dx.doi.org/10.1063/1.121171 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By using a back-gate operation, a high-quality two-dimensional electron gas (2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3×106 cm2/V s at 1.6 K is obtained for the structure without any compensating surface doping. The electron density is controllable down to 7×109 cm−2. The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density. © 1998 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition

Lisa Sugiura, Mariko Suzuki, and Johji Nishio

Appl. Phys. Lett. 72, 1748 (1998); http://dx.doi.org/10.1063/1.121172 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have clarified the effect of H2 and NH3 on the passivation of Mg acceptor in p-type GaN films grown by metalorganic chemical vapor deposition. It has been found that the small amount of H2 carrier gas strongly influences the electrical property of the Mg-doped GaN films. Low-resistivity p-type GaN has been obtained by H2-free growth without any post-treatments. Its acceptor concentration is as high as that obtained by conventional H2-rich growth with subsequent thermal annealing. It has also been clarified that hydrogen produced by NH3 dissociation does not prevent Mg from electrically activating in H2-free growth. © 1998 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation

Enhancement of acoustic- and optic-phonon generation by terahertz radiations in a two-dimensional electron system

X. L. Lei and B. Dong

Appl. Phys. Lett. 72, 1751 (1998); http://dx.doi.org/10.1063/1.121173 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a theoretical study on the angular and frequency distributions of the acoustic and optic-phonon generation by hot electrons during the terahertz-driven transport in a GaAs-based quantum well. Based on the detailed solution of the nonlinear balance equations in the presence of an oscillating electric field of arbitrary strength, we find that, when the system is exposed to an intense terahertz radiation, emissions of acoustic and optic phonons are significantly enhanced, especially along the polarized direction of the electric field. © 1998 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.30.+q High-frequency effects; plasma effects
71.38.-k Polarons and electron-phonon interactions
68.35.Ja Surface and interface dynamics and vibrations
72.20.Ht High-field and nonlinear effects
73.61.Ey III-V semiconductors
63.20.K- Phonon interactions
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Spectral shifts associated with dark line defects in degraded II-VI laser diodes

L.-L. Chao, G. S. Cargill, T. Marshall, E. Snoeks, J. Petruzzello, and M. Pashley

Appl. Phys. Lett. 72, 1754 (1998); http://dx.doi.org/10.1063/1.121174 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Spectral shifts associated with 〈100〉 dark line defects of degraded II-VI laser diodes based on ZnCdSe/ZnSSe/MgZnSSe separate confinement heterostructures have been studied by spatially resolved cathodoluminescence at room temperature. Dark line defects were induced by electron-beam bombardment. Peak shifts as large as 2 nm were observed towards the blue or the red depending on the local circumstances. Peak widths usually became narrower after degradation. Redshifts and blueshifts are explained in terms of strain relaxation and Cd out-diffusion associated locally with degradation, as well as the kinetic energy dependence of the degradation-related carrier capture cross section. © 1998 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.Lk Linear defects: dislocations, disclinations
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.80.Fe Electron and positron radiation effects
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
66.30.H- Self-diffusion and ionic conduction in nonmetals
68.35.Fx Diffusion; interface formation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Mixing effect of chelate complex and metal in organic light-emitting diodes

Jae-Gyoung Lee, Youngkyoo Kim, Sei-Hum Jang, Soon-Nam Kwon, and Kwangho Jeong

Appl. Phys. Lett. 72, 1757 (1998); http://dx.doi.org/10.1063/1.121175 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic light-emitting diodes using thin film dispersing a hole transport material into a soluble polyimide as a hole transport layer and the sublimed molecular film of a chelate complex as an emissive layer were fabricated. In order to improve the injection of electrons into the emissive layer as well as the durability of devices, we have attempted mixing the chelate complex and metal between the emissive layer and the cathodic electrode. The charge injection of the device with the mixed layer was initialized at an applied voltage of 4.19 V. It was observed from the electroluminescent spectra that the oscillator strength was dramatically enhanced with the applied voltage. © 1998 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
64.75.-g Phase equilibria
68.35.Ct Interface structure and roughness
73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
78.60.Fi Electroluminescence
79.60.Jv Interfaces; heterostructures; nanostructures
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.-w Optical properties of specific thin films
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close