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20 Apr 1998

Volume 72, Issue 16, pp. 1939-2058

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Effect of Ti substitution on the thermoelectric properties of the pentatelluride materials M1−xTixTe5 (M = Hf, Zr)

R. T. Littleton, Terry M. Tritt, C. R. Feger, J. Kolis, M. L. Wilson, M. Marone, J. Payne, D. Verebeli, and F. Levy

Appl. Phys. Lett. 72, 2056 (1998); http://dx.doi.org/10.1063/1.121406 (3 pages) | Cited 17 times

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Show Abstract
The thermoelectric properties (resistivity and thermopower) of single crystals of the low dimensional pentatelluride materials, HfTe5  and ZrTe5, have been measured as a function of temperature from 10 K<T<320 K. The effect of small amounts of Ti substitutional doping (M1−xTixTe5, where M = Hf, Zr) on the thermoelectric properties is reported here. A resistive transition occurs in the pentatellurides, as evidenced by a peak in the resistivity, TP ≈ 80 K for HfTe5 and TP ≈ 145 K for ZrTe5. Both parent materials exhibit a large positive (p-type) thermopower near room temperature which undergoes a change to negative (n-type) below the peak temperature. The thermal conductivity is relatively low (≈5 W/m K) for the MTe5 materials. The Ti substitution affects the electronic properties strongly, producing a substantial shift in the peak temperature while the large values of thermopower remain essentially unaffected. These results warrant further investigation of these materials as candidates for low temperature thermoelectric applications. © 1998 American Institute of Physics.
Show PACS
72.80.Ga Transition-metal compounds
72.20.Pa Thermoelectric and thermomagnetic effects
72.60.+g Mixed conductivity and conductivity transitions
72.20.Fr Low-field transport and mobility; piezoresistance
61.66.Bi Elemental solids
61.66.Dk Alloys
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
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