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20 Apr 1998

Volume 72, Issue 16, pp. 1939-2058

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Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Z. A. Su, J. H. Huang, L. Z. Hsieh, and W.-I. Lee

Appl. Phys. Lett. 72, 1984 (1998); http://dx.doi.org/10.1063/1.121240 (3 pages) | Cited 4 times

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The precipitation of arsenic in superlattice structures of alternately undoped and [Be] = 2.4×1019 cm−3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800 °C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
61.72.Cc Kinetics of defect formation and annealing

Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy

Heiji Watanabe, Ken Fujita, and Masakazu Ichikawa

Appl. Phys. Lett. 72, 1987 (1998); http://dx.doi.org/10.1063/1.121241 (3 pages) | Cited 32 times

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We used scanning tunneling microscopy (STM) to investigate the local leakage current through ultrathin silicon dioxide (SiO2) films grown on Si substrates. Individual leakage sites, which were created by hot-electron injection from the STM tip under a high sample bias of +10 V, were identified from the local change in surface conductivity due to defect creation in the oxide films. When we reversed the stressing polarity (using a negative sample bias) no leakage sites were created in the oxide film. © 1998 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
73.25.+i Surface conductivity and carrier phenomena
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films

The incorporation of arsenic in GaN by metalorganic chemical vapor deposition

X. Li, S. Kim, E. E. Reuter, S. G. Bishop, and J. J. Coleman

Appl. Phys. Lett. 72, 1990 (1998); http://dx.doi.org/10.1063/1.121242 (3 pages) | Cited 39 times

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We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors

Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon

H.-A. Lin, R. Jaccodine, and M. S. Freund

Appl. Phys. Lett. 72, 1993 (1998); http://dx.doi.org/10.1063/1.121243 (3 pages) | Cited 11 times

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The doping-density dependence of scanning tunneling spectroscopy on lightly doped hydrogen-terminated Si(100) (resistivities in the range of 0.2–12 Ω cm) was investigated in air with and without illumination. The observed doping-density dependence is consistent with a generation model in which the changes in the three-dimensional depletion region, induced by a scanning tunneling microscopy tip, contributes to changes in the concentration of thermally and/or photogenerated carriers in lightly doped samples. These results suggest that scanning tunneling spectroscopy can be used to image variations in dopant density in lightly doped samples. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
61.72.S- Impurities in crystals
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
72.80.Cw Elemental semiconductors

Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes

Silvano De Franceschi, Fabio Beltram, Claudio Marinelli, Lucia Sorba, Marco Lazzarino, Bernhard H. Müller, and Alfonso Franciosi

Appl. Phys. Lett. 72, 1996 (1998); http://dx.doi.org/10.1063/1.121244 (3 pages) | Cited 7 times

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We report the fabrication of nonalloyed ohmic contacts on n-InxGa1−xAs (0.25 ⩽ x ⩽ 0.38) grown by molecular beam epitaxy (MBE) on GaAs(001). This result is obtained by suppression of the native Al/InGaAs Schottky barrier by means of the MBE growth of Si bilayers at the metal-semiconductor interface. Truly ohmic contacts are demonstrated by x-ray photoemission spectroscopy and current-voltage techniques. © 1998 American Institute of Physics.
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85.30.Kk Junction diodes
73.40.Ns Metal-nonmetal contacts
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine

Y. Qiu, C. Jin, S. Francoeur, S. A. Nikishin, and H. Temkin

Appl. Phys. Lett. 72, 1999 (1998); http://dx.doi.org/10.1063/1.121245 (3 pages) | Cited 12 times

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Epitaxial layers and superlattices of GaAsN/GaAs were grown by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The incorporation of nitrogen into the solid was investigated as a function of the substrate temperature and the flux of dimethylhydrazine and modeled assuming formation of an adduct. Growth of GaAsN is characterized by an activation energy of 0.97 eV arising from a difference between activation energies of the adduct sticking coefficient, EB ∼ 1.27 eV, and the adduct formation, EA ∼ 0.3 eV. Nitrogen incorporation of 3% is obtained at a growth temperature of 400 °C. High-resolution x-ray diffraction and photoluminescence data demonstrate excellent quality of epitaxial layers and superlattices grown with dimethylhydrazine. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors

Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates

Richard Nötzel, Uwe Jahn, Zhichuan Niu, Achim Trampert, Jörg Fricke, Hans-Peter Schönherr, Thomas Kurth, Detlef Heitmann, Lutz Däweritz, and Klaus H. Ploog

Appl. Phys. Lett. 72, 2002 (1998); http://dx.doi.org/10.1063/1.121246 (3 pages) | Cited 17 times

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Three-dimensional arrays of vertically stacked sidewall quantum wires are fabricated by molecular beam epitaxy on GaAs (311)A substrates patterned with 500-nm-pitch gratings. The cathodoluminescence spectra at low temperature are dominated by the emission from the quantum wires with narrow linewidth accompanied by a very weak emission from the connecting thin quantum wells due to localization of excitons at random interface fluctuations. When the carriers in the quantum well become delocalized at elevated temperature, only the strong emission from the quantum-wire array is observed revealing perfect carrier capture into the quantum wires without detectable thermal repopulation of the quantum well up to room temperature. Thus, unpreceded device quality of this quantum-wire structure is demonstrated. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.20.Fz Weak or Anderson localization
78.66.Fd III-V semiconductors

Electronic properties of arsenic-doped gallium nitride

L. J. Guido, P. Mitev, M. Gherasimova, and B. Gaffey

Appl. Phys. Lett. 72, 2005 (1998); http://dx.doi.org/10.1063/1.121247 (3 pages) | Cited 13 times

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Arsenic-doped GaN films were grown via metalorganic chemical vapor deposition using trimethylgallium, ammonia, and arsine precursors. The arsenic concentration increases from 3×1016 to 5×1017 cm−3 in response to a change in arsine mole fraction from 3.3×102 to 3.2×104 ppm. The electron mobility increases with arsenic content reaching a maximum value of 374 cm2/V s at 300 K. In addition, the integrated photoluminescence intensity exhibits a 35-fold increase in magnitude at 300 K. To explain these findings, a simple physical model is proposed in which arsenic “impurities” occupy otherwise vacant sites on both the gallium and nitrogen sublattices. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance

Carrier capture into InGaAs/GaAs quantum wells via impurity mediated resonant tunneling

L. V. Dao, M. Gal, H. Tan, and C. Jagadish

Appl. Phys. Lett. 72, 2008 (1998); http://dx.doi.org/10.1063/1.121248 (3 pages) | Cited 2 times

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We have investigated the photoexcited carrier dynamics in In1−xGaxAs/GaAs quantum wells using the photoluminescence up-conversion technique. We found a unique capture process which was exceptional both in terms of the capture time and its temperature dependence. In the case of a specific quantum well with wide barriers, the photoluminescence rise time, a parameter which includes the overall capture time and the exciton formation time, was less than 600 fs instead of the expected few hundred picoseconds. We show in this work that this unusually rapid process is the result of the capture of the photoexcited carriers (or excitons) by impurities in the GaAs barriers, from where they resonantly tunnel into the quantum well. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena
78.47.-p Spectroscopy of solid state dynamics

Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals

Su-Huai Wei and Alex Zunger

Appl. Phys. Lett. 72, 2011 (1998); http://dx.doi.org/10.1063/1.121249 (3 pages) | Cited 253 times

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Using first-principles all-electron band structure method, we have systematically calculated the natural band offsets ΔEv between all II–VI and separately between III–V semiconductor compounds. Fundamental regularities are uncovered: for common-cation systems ΔEv decreases when the cation atomic number increases, while for common-anion systems ΔEv decreases when the anion atomic number increases. We find that coupling between anion p and cation d states plays a decisive role in determining the absolute position of the valence band maximum and thus the observed chemical trends. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.15.-m Methods of electronic structure calculations

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, and Kazuyuki Chocho

Appl. Phys. Lett. 72, 2014 (1998); http://dx.doi.org/10.1063/1.121250 (3 pages) | Cited 167 times

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InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.05.Ea III-V semiconductors

Electrical properties of semiconductive Nb-doped BaTiO3 thin films prepared by metal–organic chemical-vapor deposition

Daisuke Nagano, Hiroshi Funakubo, Kazuo Shinozaki, and Nobuyasu Mizutani

Appl. Phys. Lett. 72, 2017 (1998); http://dx.doi.org/10.1063/1.121251 (3 pages) | Cited 12 times

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Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with low electrical resistivity similar to that of the bulk single crystal were prepared by metal–organic chemical-vapor deposition. Thin films with 1.5–7.5 at. % Nb content showed n-type semiconductor character. The films with 5.7 at. % Nb content showed the lowest resistivity, 2.8×10−2 Ω cm. This value is three orders of magnitude lower than those reported for sintered of Nb-doped BaTiO3, and similar to that of Nb-doped BaTiO3 single crystals. © 1998 American Institute of Physics.
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72.80.Ga Transition-metal compounds
73.61.Le Other inorganic semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Dn Low-field transport and mobility; piezoresistance
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
72.20.Fr Low-field transport and mobility; piezoresistance

Far-infrared photoconductivity in self-organized InAs quantum dots

J. Phillips, K. Kamath, and P. Bhattacharya

Appl. Phys. Lett. 72, 2020 (1998); http://dx.doi.org/10.1063/1.121252 (3 pages) | Cited 111 times

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We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a photoconductivity signal peaked at 17 μm is observed from a n–i–n detector structure with doped InAs quantum dots in the intrinsic region. Comparison of photoluminescence and band-to-band photocurrent absorption spectra suggests the far-infrared response is due to intersubband transitions in the quantum dots. © 1998 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Hg1−xCdxI2/CdTe heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties

N. V. Sochinskii, V. Muñoz, J. M. Perez, J. Cárabe, and A. Morales

Appl. Phys. Lett. 72, 2023 (1998); http://dx.doi.org/10.1063/1.121253 (3 pages) | Cited 4 times

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We demonstrate the possibility to fabricate nuclear radiation detectors operating at room temperature from CdTe substrates affected by the vapor phase epitaxy (VPE) growth of Hg1−xCdxI2 layers. The VPE layers with the thickness 10–30 μm were grown using an α-HgI2 polycrystalline source at 220 °C and time in the range of 30–100 h. The as-grown heterostructures were chemically etched to remove the epilayers, and Au–CdTe–Au detectors were made. The substrates were characterized by synchrotron x-ray topography before and after the VPE growth, and the current–voltage (I–V) and spectroscopic measurements of the detectors were carried out. The effect of the VPE growth on the substrates and detectors has been studied and on the basis of this it has been possible to fabricate γ-ray detectors with Ohmic I–V characteristic and good spectral response. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
29.40.Wk Solid-state detectors
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Sx Metal-semiconductor-metal structures
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiC

S. Seshadri, G. W. Eldridge, and A. K. Agarwal

Appl. Phys. Lett. 72, 2026 (1998); http://dx.doi.org/10.1063/1.121681 (3 pages) | Cited 21 times

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Room temperature free carrier concentrations exceeding 1×1018 cm−1 have been achieved with 1000 °C implants into 4H–SiC using N and Al (1×1017 cm−3 using B). A decrease in resistivity is observed for annealing temperatures above ∼ 1300, ∼ 1500, and ∼ 1750 °C for N, Al, and B, respectively. Rutherford backscattering spectroscopy measurements indicate almost complete recrystallization for N-implanted samples and partial recrystallization on the silicon, but not the carbon, sublattice for B- and Al-implanted samples. An implant and species related step formation is also observed. Only boron is observed to diffuse appreciably. A crystal stoichiometry and Fermi level dependent model is proposed to explain the activation results. © 1998 American Institute of Physics.
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81.05.Hd Other semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.72.up Other materials
61.66.Bi Elemental solids
61.66.Dk Alloys
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