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5 Jan 1998

Volume 72, Issue 1, pp. 1-133

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Temperature dependence of mobility in n-type short-period Si–Ge superlattices

T. P. Pearsall, A. DiVergilio, Pierre Gassot, Duncan Maude, Hartmut Presting, Erich Kasper, W. Jäger, and Dirk Stenkamp

Appl. Phys. Lett. 72, 76 (1998); http://dx.doi.org/10.1063/1.120649 (3 pages) | Cited 3 times

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We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concentration in the mid 1016 cm−3 range. The peak mobility measured was 17 000 cm2/V s−1 at 70 K. Carrier freeze-out effects frustrated transport measurements below 60 K. Above 80 K the mobility is limited by optical phonon scattering with a characteristic phonon energy of 60 meV. These characteristics indicate electron transport via extended states. © 1998 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.50.Lw Thermoelectric effects

Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing

V. V. Afanas’ev and A. Stesmans

Appl. Phys. Lett. 72, 79 (1998); http://dx.doi.org/10.1063/1.120650 (3 pages) | Cited 14 times

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Annealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500–800 °C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the oxide. The observed charged state is attributed to hydrogen bonding to a bridging oxygen atom at the interface (threefold coordinated oxygen center), which may account for the well-known oxidation-induced charge at the Si/SiO2 interfaces. © 1998 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.65.Mq Oxidation
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems

Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

N. Grandjean, J. Massies, M. Leroux, and P. Lorenzini

Appl. Phys. Lett. 72, 82 (1998); http://dx.doi.org/10.1063/1.120651 (3 pages) | Cited 23 times

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Si- and Mg-doped GaN layers were grown on c-plane sapphire substrates by molecular beam epitaxy with NH3 as the nitrogen precursor. Their optical and electrical properties were investigated by photoluminescence experiments and Hall measurements, respectively. P-type conductivity, with a net acceptor concentration of 3×1017 cm−3 and a mobility of 8 cm2/V s, was obtained. Mesa-etched light-emitting diodes were processed from p–n junctions. The turn-on voltage is 3 V and the forward current reaches 20 mA at 3.5 V. The room-temperature electroluminescence exhibits a strong emission at 390 nm. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
71.55.Eq III-V semiconductors

The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN

J. R. Jenny, J. E. Van Nostrand, and R. Kaspi

Appl. Phys. Lett. 72, 85 (1998); http://dx.doi.org/10.1063/1.120652 (3 pages) | Cited 9 times

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In this letter, we report on the impact aluminum has on gallium desorption kinetics in AlGaN alloys grown by gas source-molecular beam epitaxy. Aluminum is found to preferentially incorporate into the AlGaN films over the range of fluxes and temperatures investigated [0.05 ⩽ Ji(Ga) ⩽ 0.5 ML/s; 0.1 ⩽ Ji(Al) ⩽ 0.2 ML/s; 700 °C ⩽ Ts ⩽ 775 °C]. As a result, Ga is not observed to incorporate into the film until the NH3 flux exceeds that required to grow stoichiometric AlN. This preferential incorporation stems from two facts: (a) Al has an ammonia cracking efficiency ∼2.5 times greater than that of Ga, and (b) Al participates in a Al-for-Ga exchange. As a result of these factors and under NH3 limited growth conditions, the aluminum mole fraction in a layer can be controlled by changing the incident NH3 flux. © 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.05.Ea III-V semiconductors

Mechanism of the photochemically induced reaction between Ga(CH3)3 and HN3 and the deposition of GaN films

C. J. Linnen and R. D. Coombe

Appl. Phys. Lett. 72, 88 (1998); http://dx.doi.org/10.1063/1.120653 (3 pages) | Cited 2 times

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Gaseous HN3 reacts with surface-bound Ga(CH3)x species slowly at 300 K to produce thin films containing azide-substituted gallium compounds. When mixtures of HN3 and Ga(CH3)3 over the surface are irradiated at 253.7 nm, the reaction is dramatically accelerated, and films containing GaN and complexed N2 are produced. Heating of these films to 400 K drives off the N2 leaving GaN. The mechanism of the reaction is thought to involve photodissociation of HN3 to produce excited NH(a1Δ) and N2, followed by insertion of the NH(a1Δ) into the Ga–C bond of surface-bound Ga(CH3)x molecules. The insertion product eliminates CH4 to leave GaN. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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High stability amorphous-silicon–nitride thin-film diode ring switch

M. T. Johnson, G. Oversluizen, A. A. van der Put, and W. H. M. Lodders

Appl. Phys. Lett. 72, 91 (1998); http://dx.doi.org/10.1063/1.120654 (3 pages) | Cited 1 time

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Hydrogenated amorphous-silicon–nitride thin-film diode (TFD) switches have been shown to degrade electrically at both the cathode (electron injection contact) and anode (noninjection contact) due, respectively, to electron–hole recombination and hot-electron-induced-state creation mechanisms. An antiparallel configuration of two asymmetric TFDs provides an elegant method to minimize the cathodic degradation and avoid the consequences of anodic defect state creation. In this way, extremely stable TFDs may be prepared. © 1998 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
84.32.Dd Connectors, relays, and switches

Excitonic transitions in (GaAs)1−x(Ge2)x/GaAs multilayers grown by magnetron sputtering

B. Salazar-Hernández, M. A. Vidal, H. Navarro-Contreras, R. Asomoza, and A. Merkulov

Appl. Phys. Lett. 72, 94 (1998); http://dx.doi.org/10.1063/1.120655 (3 pages)

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We report on excitonic transitions observed at room temperature in multilayers of (GaAs)1−x(Ge2)x/GaAs grown by magnetron sputtering. We attribute the observation of the exciton absorption at room temperature to confinement effects on the bound electron–hole pairs inside the Ge-rich layers of the (GaAs)1−x(Ge2)x alloys. From secondary ions mass spectroscopy these layers are measured to be 50, 33, and 30 nm in full width at half maximum (FWHM), for three different samples. These layers alternate with (GaAs)1−x(Ge2)x alloy layers of very low Ge concentration that can be considered of plain GaAs, ∼ 360 nm in thickness for two samples and 240 nm for a third one. The observed transition energies of the exciton are very close to ≈ 1 eV both at 300 and 4 K. A calculation of exciton energy-level spacing and transition probabilities provides acceptable values for the exciton transition energies observed, considering a triangular quantum well as an approximation to the Ge profile in the confinement layers. The observed excitonic FWHM remain nearly constant at all temperatures examined (300–4 K). © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
81.15.Cd Deposition by sputtering
73.61.Ey III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Db Elemental semiconductors and insulators
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells

Y.-G. Zhao, Y.-H. Zou, J.-J. Wang, Y.-D. Qin, X.-L. Huang, R. A. Masut, and A. Bensaada

Appl. Phys. Lett. 72, 97 (1998); http://dx.doi.org/10.1063/1.120656 (3 pages)

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We have observed differential reflection dynamics in In0.518Ga0.492As/InP multiple quantum wells, using the pump–probe technique, and examined the photoluminescence spectra to determine the interface quality for the samples studied. Our results show that the interface quality and well width of the quantum wells (QWs) strongly influence the differential reflection dynamics. The experimental results provide a direct evidence to demonstrate that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to sample surface plays a dominant role in determining the differential reflection dynamics of the QWs. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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Signal strength enhancement and bandwidth tuning in moving space charge field photodetectors using alternating bias field

Chen-Chia Wang, Richard A. Linke, David D. Nolte, Michael R. Melloch, and Sudhir Trivedi

Appl. Phys. Lett. 72, 100 (1998); http://dx.doi.org/10.1063/1.120657 (3 pages) | Cited 6 times

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Enhancement of the photocurrent density generated by internal moving space charge electric fields in semi-insulating GaAs multiple quantum wells is observed when the sample is biased with a high speed, zero-mean square wave electric field which increases the internal space charge electric field strength. Tunability of the space charge field formation time is also demonstrated by adjusting the amplitude of the bias signal. This technique can be used to enhance the sensitivity of optical doppler frequency measurements based on moving space charge field effects in photoconductive semiconductors. Electronic tunability of the space charge field formation time also adds versatility in optical power spectrum analysis applications. © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
77.22.Jp Dielectric breakdown and space-charge effects
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Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon

R. Rapaport, Y. Lubianiker, I. Balberg, and L. Fonseca

Appl. Phys. Lett. 72, 103 (1998); http://dx.doi.org/10.1063/1.120658 (3 pages) | Cited 5 times

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While sensitization of the photoconductivity, i.e., the increase of the majority carrier lifetime by the addition of recombination centers, is known for many years, there was no evidence or suggestion for the corresponding sensitization of the minority carrier lifetime. In this letter, we present experimental evidence for the existence of such an effect in device quality undoped hydrogenated amorphous silicon films. We propose possible scenarios that can yield the observed effect and mention the possible benefits of the minority carrier sensitization for the improvement of bipolar optoelectronic devices made of this material. © 1998 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors

Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

Chang Hyun Lee and Koeng Su Lim

Appl. Phys. Lett. 72, 106 (1998); http://dx.doi.org/10.1063/1.120659 (3 pages) | Cited 16 times

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A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B2H6 and C2H4. By increasing the boron doping ratio (B2H6/C2H4) from 0 to 12 000 ppm, the dark conductivity increased from ∼ 10−9 to ∼ 10−7 S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3×10−8 S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-Å-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 Å)/p-a-SiC (40 Å) double p-layer structure. The thin (<15 Å) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. © 1998 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Jc Amorphous semiconductors; glasses
68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects
81.05.Gc Amorphous semiconductors
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
72.80.Ng Disordered solids

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Xianglin Liu, Yude Zan, Jun Wang, Du Wang, Da-cheng Lu, and Zhanguo Wang

Appl. Phys. Lett. 72, 109 (1998); http://dx.doi.org/10.1063/1.120660 (3 pages) | Cited 32 times

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Wurtzite GaN films have been grown on (001) Si substrates using γ-Al2O3 as an intermediate layer by low pressure ( ∼ 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin γ-Al2O3 layer of “compliant” character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 μm GaN sample was 54 arcmin. The orientation relationship of GaN/γ-Al2O3/Si was (0001) GaN‖(001) γ-Al2O3‖(001) Si, [11–20] GaN‖[110] γ-Al2O3‖[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
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Reduction of flux creep by heat pulses

G. A. Levin, C. C. Almasan, D. A. Gajewski, and M. B. Maple

Appl. Phys. Lett. 72, 112 (1998); http://dx.doi.org/10.1063/1.120661 (3 pages) | Cited 3 times

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We investigated the possibility of reducing the giant flux creep in high-temperature superconductors by temporarily increasing the temperature T above the operating temperature T0, after the critical state is created at T0. This T increase leads to a supercritical state which decays rapidly so that, when T is decreased back to T0, the superconductor is in the subcritical state. We have found that both the maximum persistent current and the relaxation rate are hysteretic and differ substantially from the corresponding quantities measured after flux annealing. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
61.72.Cc Kinetics of defect formation and annealing

Low noise multiwasher superconducting interferometer

P. Carelli, M. G. Castellano, G. Torrioli, and R. Leoni

Appl. Phys. Lett. 72, 115 (1998); http://dx.doi.org/10.1063/1.121444 (3 pages) | Cited 25 times

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The dc-superconducting quantum interference device (SQUID) is a low-noise converter from magnetic flux to voltage which can have, in principle, an energy sensitivity near the quantum limit of ℏ/2. A critical parameter for the ideal performance is the device inductance, which must be kept as small as possible. Minimizing the SQUID inductance, however, is a major concern for a practical device; this requirement implies a small SQUID ring and hence magnetic coupling with an external signal is more difficult to achieve. Here we present an original scheme (called multiwasher) to circumvent this problem, and its implementation in an all-refractory thin-film device. Our scheme not only provides good magnetic coupling with a large input coil (0.5 μH) and very low SQUID inductance, but also shielding from outside uniform fields, such as those generated by ambient disturbances. The measured coupled spectral energy sensitivity in the white region at about 1 kHz is 28ℏ at 4.2 K and 5.5ℏ in a pumped helium bath at 0.9 K. The flux noise spectral density at 0.1 Hz and 0.9 K is Φn = 1×10−6 Φ0/math. © 1998 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
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A microstructural study of annealed Ti/Co/Cu/Co/MnFe/Ti spin-valve films

X. Portier, A. K. Petford-Long, P. Bayle-Guillemaud, T. C. Anthony, and J. A. Brug

Appl. Phys. Lett. 72, 118 (1998); http://dx.doi.org/10.1063/1.120662 (3 pages) | Cited 6 times

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Spin-valve properties are adversely affected by heat treatments and in order to study this effect, microstructural analyses of Ti/Co/Cu/Co/MnFe/Ti spin-valve films annealed at 225 and at 290 °C have been performed. Whereas the lower temperature tends to optimize the giant magnetoresistance (GMR) ratio, the higher temperature induces a significant decrease in the GMR ratio (from 7.5% to 5.2%). High resolution electron microscopy studies have explained this result as being due to the formation of a TiCo alloy at the Ti/Co interface and to a decrease in the thickness of the sense layer. No significant modification of either the Co/Cu or the Cu/Co interfaces has been observed. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.61.At Metal and metallic alloys
75.47.De Giant magnetoresistance
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness

High performance α-Fe/Nd2Fe14B-type nanocomposites

W. C. Chang, D. Y. Chiou, S. H. Wu, B. M. Ma, and C. O. Bounds

Appl. Phys. Lett. 72, 121 (1998); http://dx.doi.org/10.1063/1.121446 (3 pages) | Cited 46 times

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The α-Fe/R2Fe14B-type exchange-coupled NdFeB nanocomposites with a coercivity (iHc) of more than 11 kOe and energy product, (BH)max, of more than 16 MGOe have been successfully obtained on melt spun (Nd0.95La0.05)7.5+xFebalCr2B10 alloy powders, where x ranged from 3 to 3.5. It was found that a slight substitution of Cr for Fe suppresses the formation of the R2Fe23B3 and Fe3B phases during crystallization and results in the formation of an α-Fe/R2Fe14B mixture. Increasing the total rare earth content was found to enhance the remanence, and the iHc of (Nd0.95La0.05)7.5+xFe80.5−xCr2B10 ribbons was also increased drastically with increasing values of x. A Br of 9.2–9.7 kG, iHc of 11.1–13.2 kOe, and (BH)max of 16.5–18.0 MGOe have been obtained on (Nd0.95La0.05)7.5+xFe80.5−xCr2B10 (x = 3–3.5). © 1998 American Institute of Physics.
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75.50.Vv High coercivity materials
75.50.Ww Permanent magnets
75.50.Bb Fe and its alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

The spin-polarized scanning electron microscope observation of 0.1 μm marks recorded by magnetic field modulation on a magneto-optical recording disk

Teruo Kohashi, Hideo Matsuyama, Kazuyuki Koike, Yoshiteru Murakami, Yasuhito Tanaka, and Hiroyuki Awano

Appl. Phys. Lett. 72, 124 (1998); http://dx.doi.org/10.1063/1.120666 (3 pages) | Cited 2 times

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The magneto-optically recorded marks with magnetic field modulation method were studied using spin-polarized scanning electron microscopy. We confirmed that marks with as short a length as 0.1 μm could be written repeatedly even with laser spot sizes about 1.2 μm. This mark length is less than ⅙ that of present commercial products. © 1998 American Institute of Physics.
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85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
42.79.Vb Optical storage systems, optical disks
85.70.Sq Magnetooptical devices
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
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Enhanced cluster mobilities on Pt(111) during film growth from the vapor phase

V. Chirita, E. P. Münger, J.-E. Sundgren, and J. E. Greene

Appl. Phys. Lett. 72, 127 (1998); http://dx.doi.org/10.1063/1.120664 (3 pages) | Cited 9 times

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We use molecular dynamics simulations to follow the dynamics of small two-dimensional Pt clusters on Pt(111) at 1000 K. While close-packed Pt7 heptamers are extremely stable structures, the addition of a single cluster vacancy or an on-top adatom immediately results in intracluster bond breaking, reconfigurations, rotations, the introduction of stacking faults, and greatly enhanced cluster diffusion rates. Mapping center-of-mass motion for total simulation times >145 ns revealed increases in cluster velocities by more than an order of magnitude with cluster migration occurring primarily by concerted motion and a novel diffusion mechanism involving double shearing of dimers/trimers. Contrary to some previous reports, edge-atom diffusion plays only a minor role. © 1998 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
61.72.Nn Stacking faults and other planar or extended defects
61.46.-w Structure of nanoscale materials
61.72.J- Point defects and defect clusters
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.55.-a Thin film structure and morphology

Transient photocurrents in lead zirconate titanate thin films

A. Kholkin, O. Boiarkine, and N. Setter

Appl. Phys. Lett. 72, 130 (1998); http://dx.doi.org/10.1063/1.120663 (3 pages) | Cited 27 times

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Transient photocurrents are investigated in ferroelectric lead zirconate titanate (PZT) films illuminated by laser pulses in the spectral range of 340–380 nm. At low electric fields, the photocurrent is sensitive to the ferroelectric polarization state and changes sign upon the polarization switching. At higher fields, the polarization-independent current proportional to the applied electric field is dominant. The spectral dependence of polarization-dependent current is controlled by the excitation of charge carriers over the forbidden band of PZT having a maximum near 3.5 eV. Possible mechanisms of the observed effect are discussed and the possibilities of a nondestructive read out of polarization state in the ultraviolet spectral range are demonstrated. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
73.50.Pz Photoconduction and photovoltaic effects
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
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Erratum: “Etch-pit initiation by dissolved oxygen on terraces of H–Si(111)” [Appl. Phys. Lett. 71, 1679 (1997)]

Christopher P. Wade and Christopher E. D. Chidsey

Appl. Phys. Lett. 72, 133 (1998); http://dx.doi.org/10.1063/1.120665 (1 page) | Cited 3 times

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Abstract Unavailable
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99.10.Cd Errata
81.05.Cy Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
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