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5 Jan 1998

Volume 72, Issue 1, pp. 1-133

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A “smarter-cut” approach to low temperature silicon layer transfer

Q.-Y. Tong, R. Scholz, U. Gösele, T.-H. Lee, L.-J. Huang, Y.-L. Chao, and T. Y. Tan

Appl. Phys. Lett. 72, 49 (1998); http://dx.doi.org/10.1063/1.120601 (3 pages) | Cited 51 times

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Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 °C. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
81.05.Cy Elemental semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing

Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy

J. F. Siliquini, J. M. Dell, C. A. Musca, E. P. G. Smith, L. Faraone, and J. Piotrowski

Appl. Phys. Lett. 72, 52 (1998); http://dx.doi.org/10.1063/1.120642 (3 pages) | Cited 12 times

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Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH4/H2, 0.4 W/cm2), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80–300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD™ DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors
72.60.+g Mixed conductivity and conductivity transitions
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
72.40.+w Photoconduction and photovoltaic effects
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
61.72.J- Point defects and defect clusters
73.20.Hb Impurity and defect levels; energy states of adsorbed species

An optical method for studying carrier diffusion in strained (InP)2/(GaP)2 quantum wires

Y. Tang, D. H. Rich, A. M. Moy, and K. Y. Cheng

Appl. Phys. Lett. 72, 55 (1998); http://dx.doi.org/10.1063/1.120627 (3 pages) | Cited 6 times

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The carrier transport in strain-induced laterally ordered (InP)2/(GaP)2 quantum wire (QWR) samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the [110] and [110] directions (perpendicular and parallel to the QWRs, respectively) was observed. The temperature dependence of this anisotropy was measured, revealing that carrier diffusion along the QWR direction is thermally activated. © 1998 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Auger carrier capture kinetics in self-assembled quantum dot structures

A. V. Uskov, J. McInerney, F. Adler, H. Schweizer, and M. H. Pilkuhn

Appl. Phys. Lett. 72, 58 (1998); http://dx.doi.org/10.1063/1.120643 (3 pages) | Cited 63 times

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We establish rate equations to describe Auger carrier capture kinetics in quantum dot structures, calculate Auger capture coefficients for self-assembled quantum dots, and analyze Auger capture kinetics using these equations. We show that Auger capture times can be of the order of 1–100 ps depending on barrier carrier and dot densities. Auger capture rates depend strongly on dot diameters and are greatest at dot diameters of about 10–20 nm. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Multiple-junction single-electron transistors for digital applications

R. H. Chen and K. K. Likharev

Appl. Phys. Lett. 72, 61 (1998); http://dx.doi.org/10.1063/1.120644 (3 pages) | Cited 22 times

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The concept of the capacitively coupled single-electron transistor (CSET) is generalized to a device based on a linear array of N tunnel junctions. The basic characteristics of such multiple-junction CSETs are calculated for several distributions of tunnel junction and coupling capacitances. The results indicate that for optimized parameters, the operating temperature and parameter tolerances increase appreciably with N, with the most striking gains for N≲5. For example, a five-junction transistor may provide a 2.5-fold increase of the maximum operating temperature, for the same minimum feature size. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices
85.35.Ds Quantum interference devices
84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices

The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures

R. Gaska, J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminski, and S. M. Soloviov

Appl. Phys. Lett. 72, 64 (1998); http://dx.doi.org/10.1063/1.120645 (3 pages) | Cited 44 times

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We report on the effect of external strain on the two-dimensional electron gas density in AlGaN/GaN heterostructures grown on sapphire by low pressure metalorganic chemical vapor deposition. The electron sheet concentration in the studied samples was 4×1012–2×1013 cm−2 and decreased with compressive strain. Lower doped heterostructures had a higher sensitivity to applied strain. The comparison between the experimental data and our model shows that the GaN layers are primarily nitrogen terminated at the heterointerface. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Capture of vacancies by extrinsic dislocation loops in silicon

S. B. Herner, H.-J. Gossmann, F. H. Baumann, G. H. Gilmer, D. C. Jacobson, and K. S. Jones

Appl. Phys. Lett. 72, 67 (1998); http://dx.doi.org/10.1063/1.120646 (3 pages) | Cited 4 times

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The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops in NH3 results in an injection of vacancies, which enhances the diffusion of Sb spikes located between the surface and loop band. By extracting the diffusivity in the Sb spikes on either side of the loop band, we conclude that over 90% of the injected vacancies are captured by the loops. © 1998 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.J- Diffusion of impurities

Excitation density dependence of photoluminescence in GaN:Mg

Eunsoon Oh, Hyeongsoo Park, and Yongjo Park

Appl. Phys. Lett. 72, 70 (1998); http://dx.doi.org/10.1063/1.120647 (3 pages) | Cited 41 times

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Continuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally undoped samples the intensity ratio of a donor-bound exciton line and a donor–acceptor pair line changes dramatically with excitation density due to the limited number of acceptors. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Phonon confinement effects in the Raman scattering by TiO2 nanocrystals

D. Bersani, P. P. Lottici, and Xing-Zhao Ding

Appl. Phys. Lett. 72, 73 (1998); http://dx.doi.org/10.1063/1.120648 (3 pages) | Cited 162 times

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Nanocrystalline TiO2 has been obtained by a sol-gel process by controlling the crystal size through the water/alkoxide ratio. Raman spectra of anatase nanocrystals with average sizes of 9.5–13.4 nm are reported and the correlation between the Raman band shape (peak position and linewidth) of the main feature at 144 cm−1 and the crystals dimension is discussed. While in this system a minor role is played by nonstoichiometry and pressure effects, a model based on the phonon confinement, which takes into account the size distribution as determined by the transmission electron microscopy images, correctly reproduces the Raman band shape change. © 1998 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
61.46.-w Structure of nanoscale materials
61.66.Bi Elemental solids
61.66.Dk Alloys
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Temperature dependence of mobility in n-type short-period Si–Ge superlattices

T. P. Pearsall, A. DiVergilio, Pierre Gassot, Duncan Maude, Hartmut Presting, Erich Kasper, W. Jäger, and Dirk Stenkamp

Appl. Phys. Lett. 72, 76 (1998); http://dx.doi.org/10.1063/1.120649 (3 pages) | Cited 3 times

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We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concentration in the mid 1016 cm−3 range. The peak mobility measured was 17 000 cm2/V s−1 at 70 K. Carrier freeze-out effects frustrated transport measurements below 60 K. Above 80 K the mobility is limited by optical phonon scattering with a characteristic phonon energy of 60 meV. These characteristics indicate electron transport via extended states. © 1998 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.50.Lw Thermoelectric effects

Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing

V. V. Afanas’ev and A. Stesmans

Appl. Phys. Lett. 72, 79 (1998); http://dx.doi.org/10.1063/1.120650 (3 pages) | Cited 14 times

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Annealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500–800 °C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the oxide. The observed charged state is attributed to hydrogen bonding to a bridging oxygen atom at the interface (threefold coordinated oxygen center), which may account for the well-known oxidation-induced charge at the Si/SiO2 interfaces. © 1998 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.65.Mq Oxidation
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems

Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

N. Grandjean, J. Massies, M. Leroux, and P. Lorenzini

Appl. Phys. Lett. 72, 82 (1998); http://dx.doi.org/10.1063/1.120651 (3 pages) | Cited 23 times

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Si- and Mg-doped GaN layers were grown on c-plane sapphire substrates by molecular beam epitaxy with NH3 as the nitrogen precursor. Their optical and electrical properties were investigated by photoluminescence experiments and Hall measurements, respectively. P-type conductivity, with a net acceptor concentration of 3×1017 cm−3 and a mobility of 8 cm2/V s, was obtained. Mesa-etched light-emitting diodes were processed from p–n junctions. The turn-on voltage is 3 V and the forward current reaches 20 mA at 3.5 V. The room-temperature electroluminescence exhibits a strong emission at 390 nm. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
71.55.Eq III-V semiconductors

The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN

J. R. Jenny, J. E. Van Nostrand, and R. Kaspi

Appl. Phys. Lett. 72, 85 (1998); http://dx.doi.org/10.1063/1.120652 (3 pages) | Cited 9 times

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In this letter, we report on the impact aluminum has on gallium desorption kinetics in AlGaN alloys grown by gas source-molecular beam epitaxy. Aluminum is found to preferentially incorporate into the AlGaN films over the range of fluxes and temperatures investigated [0.05 ⩽ Ji(Ga) ⩽ 0.5 ML/s; 0.1 ⩽ Ji(Al) ⩽ 0.2 ML/s; 700 °C ⩽ Ts ⩽ 775 °C]. As a result, Ga is not observed to incorporate into the film until the NH3 flux exceeds that required to grow stoichiometric AlN. This preferential incorporation stems from two facts: (a) Al has an ammonia cracking efficiency ∼2.5 times greater than that of Ga, and (b) Al participates in a Al-for-Ga exchange. As a result of these factors and under NH3 limited growth conditions, the aluminum mole fraction in a layer can be controlled by changing the incident NH3 flux. © 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.05.Ea III-V semiconductors

Mechanism of the photochemically induced reaction between Ga(CH3)3 and HN3 and the deposition of GaN films

C. J. Linnen and R. D. Coombe

Appl. Phys. Lett. 72, 88 (1998); http://dx.doi.org/10.1063/1.120653 (3 pages) | Cited 2 times

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Gaseous HN3 reacts with surface-bound Ga(CH3)x species slowly at 300 K to produce thin films containing azide-substituted gallium compounds. When mixtures of HN3 and Ga(CH3)3 over the surface are irradiated at 253.7 nm, the reaction is dramatically accelerated, and films containing GaN and complexed N2 are produced. Heating of these films to 400 K drives off the N2 leaving GaN. The mechanism of the reaction is thought to involve photodissociation of HN3 to produce excited NH(a1Δ) and N2, followed by insertion of the NH(a1Δ) into the Ga–C bond of surface-bound Ga(CH3)x molecules. The insertion product eliminates CH4 to leave GaN. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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High stability amorphous-silicon–nitride thin-film diode ring switch

M. T. Johnson, G. Oversluizen, A. A. van der Put, and W. H. M. Lodders

Appl. Phys. Lett. 72, 91 (1998); http://dx.doi.org/10.1063/1.120654 (3 pages) | Cited 1 time

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Hydrogenated amorphous-silicon–nitride thin-film diode (TFD) switches have been shown to degrade electrically at both the cathode (electron injection contact) and anode (noninjection contact) due, respectively, to electron–hole recombination and hot-electron-induced-state creation mechanisms. An antiparallel configuration of two asymmetric TFDs provides an elegant method to minimize the cathodic degradation and avoid the consequences of anodic defect state creation. In this way, extremely stable TFDs may be prepared. © 1998 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
84.32.Dd Connectors, relays, and switches

Excitonic transitions in (GaAs)1−x(Ge2)x/GaAs multilayers grown by magnetron sputtering

B. Salazar-Hernández, M. A. Vidal, H. Navarro-Contreras, R. Asomoza, and A. Merkulov

Appl. Phys. Lett. 72, 94 (1998); http://dx.doi.org/10.1063/1.120655 (3 pages)

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We report on excitonic transitions observed at room temperature in multilayers of (GaAs)1−x(Ge2)x/GaAs grown by magnetron sputtering. We attribute the observation of the exciton absorption at room temperature to confinement effects on the bound electron–hole pairs inside the Ge-rich layers of the (GaAs)1−x(Ge2)x alloys. From secondary ions mass spectroscopy these layers are measured to be 50, 33, and 30 nm in full width at half maximum (FWHM), for three different samples. These layers alternate with (GaAs)1−x(Ge2)x alloy layers of very low Ge concentration that can be considered of plain GaAs, ∼ 360 nm in thickness for two samples and 240 nm for a third one. The observed transition energies of the exciton are very close to ≈ 1 eV both at 300 and 4 K. A calculation of exciton energy-level spacing and transition probabilities provides acceptable values for the exciton transition energies observed, considering a triangular quantum well as an approximation to the Ge profile in the confinement layers. The observed excitonic FWHM remain nearly constant at all temperatures examined (300–4 K). © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
81.15.Cd Deposition by sputtering
73.61.Ey III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Db Elemental semiconductors and insulators
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells

Y.-G. Zhao, Y.-H. Zou, J.-J. Wang, Y.-D. Qin, X.-L. Huang, R. A. Masut, and A. Bensaada

Appl. Phys. Lett. 72, 97 (1998); http://dx.doi.org/10.1063/1.120656 (3 pages)

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We have observed differential reflection dynamics in In0.518Ga0.492As/InP multiple quantum wells, using the pump–probe technique, and examined the photoluminescence spectra to determine the interface quality for the samples studied. Our results show that the interface quality and well width of the quantum wells (QWs) strongly influence the differential reflection dynamics. The experimental results provide a direct evidence to demonstrate that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to sample surface plays a dominant role in determining the differential reflection dynamics of the QWs. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon

R. Rapaport, Y. Lubianiker, I. Balberg, and L. Fonseca

Appl. Phys. Lett. 72, 103 (1998); http://dx.doi.org/10.1063/1.120658 (3 pages) | Cited 5 times

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While sensitization of the photoconductivity, i.e., the increase of the majority carrier lifetime by the addition of recombination centers, is known for many years, there was no evidence or suggestion for the corresponding sensitization of the minority carrier lifetime. In this letter, we present experimental evidence for the existence of such an effect in device quality undoped hydrogenated amorphous silicon films. We propose possible scenarios that can yield the observed effect and mention the possible benefits of the minority carrier sensitization for the improvement of bipolar optoelectronic devices made of this material. © 1998 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors

Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

Chang Hyun Lee and Koeng Su Lim

Appl. Phys. Lett. 72, 106 (1998); http://dx.doi.org/10.1063/1.120659 (3 pages) | Cited 16 times

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A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B2H6 and C2H4. By increasing the boron doping ratio (B2H6/C2H4) from 0 to 12 000 ppm, the dark conductivity increased from ∼ 10−9 to ∼ 10−7 S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3×10−8 S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-Å-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 Å)/p-a-SiC (40 Å) double p-layer structure. The thin (<15 Å) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. © 1998 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Jc Amorphous semiconductors; glasses
68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects
81.05.Gc Amorphous semiconductors
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
72.80.Ng Disordered solids

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Xianglin Liu, Yude Zan, Jun Wang, Du Wang, Da-cheng Lu, and Zhanguo Wang

Appl. Phys. Lett. 72, 109 (1998); http://dx.doi.org/10.1063/1.120660 (3 pages) | Cited 32 times

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Wurtzite GaN films have been grown on (001) Si substrates using γ-Al2O3 as an intermediate layer by low pressure ( ∼ 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin γ-Al2O3 layer of “compliant” character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 μm GaN sample was 54 arcmin. The orientation relationship of GaN/γ-Al2O3/Si was (0001) GaN‖(001) γ-Al2O3‖(001) Si, [11–20] GaN‖[110] γ-Al2O3‖[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
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