Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P
laser structure have a threshold-current density, Jth,
of 310 A/cm2
and relatively high values for the characteristic temperatures of the threshold current, T0
(135 K), and differential quantum efficiency, T1
(900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, COMD,
is 17.4 MW/cm2;
that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. © 1998 American Institute of Physics.