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18 May 1998

Volume 72, Issue 20, pp. 2499-2618

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Local disorder effects on the pressure dependence of the metal–insulator transition in manganese perovskites

J. Fontcuberta, V. Laukhin, and X. Obradors

Appl. Phys. Lett. 72, 2607 (1998); http://dx.doi.org/10.1063/1.121432 (3 pages) | Cited 35 times

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We address the role of the local disorder created by substitutional ions in L2/3A1/3MnO3 oxides, on the pressure dependence of the Curie temperature dln TC/dP. A number of manganites having distinct averaged lanthanide R0 radii and size variance σ2 have been prepared and their resistivity measured up to 11 kbar. It is found that the measured dln TC/dP is mainly determined by R0. However, materials having larger local disorder display larger pressure sensitivity. It is proposed that this results from partial suppression of the local disorder under pressure, and a model is developed to account for the experimental data. © 1998 American Institute of Physics.
Show PACS
75.50.Dd Nonmetallic ferromagnetic materials
71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions
75.47.De Giant magnetoresistance
61.66.Fn Inorganic compounds
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
72.20.My Galvanomagnetic and other magnetotransport effects
62.50.-p High-pressure effects in solids and liquids
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