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18 May 1998

Volume 72, Issue 20, pp. 2499-2618

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Coulomb effects on charged, buried metal disks at room temperature

L.-E. Wernersson, A. Litwin, L. Montelius, H. Pettersson, and L. Samuelson

Appl. Phys. Lett. 72, 2610 (1998); http://dx.doi.org/10.1063/1.121433 (3 pages) | Cited 3 times

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Capacitance transients caused by capture and emission of electrons from buried metal disks are investigated. A single layer of tungsten disks, arranged in a square lattice, is introduced into GaAs by epitaxial overgrowth and a depleted layer is formed around the disks due to the metal–semiconductor Schottky barrier. The number of captured electrons on each disk is measured by the capacitance associated with the width of the depletion layer, whereas the capacitance transients reflect the changes in the number of excess electrons on the disks. By investigating the emission time constants for varying numbers of electrons in excess on the disks, the Coulomb effect is studied. In combination with a temperature-dependent capture, a Coulomb charging energy of only 4 meV is shown to shift the measured activation energies erroneously by hundreds of meV. © 1998 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Energy dissipation in tapping-mode atomic force microscopy

J. P. Cleveland, B. Anczykowski, A. E. Schmid, and V. B. Elings

Appl. Phys. Lett. 72, 2613 (1998); http://dx.doi.org/10.1063/1.121434 (3 pages) | Cited 276 times

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A method is presented to measure the energy dissipated by the tip–sample interaction in tapping-mode atomic force microscopy (AFM). The results show that if the amplitude of the cantilever is held constant, the sine of the phase angle of the driven vibration is then proportional to changes in the tip–sample energy dissipation. This means that images of the cantilever phase in tapping-mode AFM are closely related to maps of dissipation. The maximum dissipation observed for a 4 N/m cantilever with an initial amplitude of 25 nm tapping on a hard substrate at 74 kHz is about 0.3 pW. © 1998 American Institute of Physics.
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07.79.Lh Atomic force microscopes

Area-selective nucleation of copper on fluorocarbon–resin surface using ArF excimer laser-induced chemical modification

M. Okoshi and M. Murahara

Appl. Phys. Lett. 72, 2616 (1998); http://dx.doi.org/10.1063/1.121435 (3 pages) | Cited 7 times

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Area-selective nucleation of copper onto fluorocarbon–resin surface was demonstrated by using an ArF excimer laser and copper–sulfate (CuSO4) aqueous solution. Pyramid-typed shaped nuclei of copper were initially formed on even an inert surface of fluorocarbon–resin in the same way as semiconductor or metal surfaces. Interface of copper nuclei and fluorocarbon–resin was chemically bonded through oxygen which was photodissociated from water in copper–sulfate aqueous solution under ArF excimer laser irradiation. The modification cannot be successful without our previous defluorination efforts using ArF excimer laser-induced chemical reaction. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
79.20.Ds Laser-beam impact phenomena
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