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18 May 1998

Volume 72, Issue 20, pp. 2499-2618

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Improvement of Ge self-organized quantum dots by use of Sb surfactant

C. S. Peng, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung

Appl. Phys. Lett. 72, 2541 (1998); http://dx.doi.org/10.1063/1.121412 (3 pages) | Cited 26 times

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A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and free of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.40.Fy Semiconductors

Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Min Gao, X. F. Duan, Fenglian Wang, and Jianming Li

Appl. Phys. Lett. 72, 2544 (1998); http://dx.doi.org/10.1063/1.121413 (3 pages) | Cited 5 times

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Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted (001) silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2〈110〉 type. The gettering of oxygen at the nanocavities was demonstrated. © 1998 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments
61.72.Cc Kinetics of defect formation and annealing
61.72.Yx Interaction between different crystal defects; gettering effect
81.65.Tx Gettering

Cross-sectional transmission electron microscopy analysis of {311} defects from Si implantation into silicon

K. Moller, Kevin S. Jones, and Mark E. Law

Appl. Phys. Lett. 72, 2547 (1998); http://dx.doi.org/10.1063/1.120623 (3 pages) | Cited 20 times

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Transient enhanced diffusion (TED) below the amorphization dose threshold is thought to be caused by the release of interstitials from {311} defects. The interstitials are annihilated by diffusion to and then recombination with the surface of the wafer. This would suggest that the layer of {311} defects formed from an implantation and anneal would dissolve from the surface down. Cross-section transmission electron microscopy (TEM) was used to investigate this hypothesis. It is shown that the {311} defects dissolve uniformly across the layer, and the width of the layer does not change until the {311} defects nearly completely dissolve. The total population was also measured using plan-view TEM, so that the dissolution and distribution functions could be plotted from the same annealing conditions. These data suggest that surface is not the limiting factor in the interstitial removal from {311} defects. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Phase noise of a resonant-tunneling relaxation oscillator

S. Verghese, C. D. Parker, and E. R. Brown

Appl. Phys. Lett. 72, 2550 (1998); http://dx.doi.org/10.1063/1.121414 (3 pages) | Cited 6 times

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Experimental results are presented for the phase noise of a relaxation oscillator consisting of a resonant-tunneling diode in series connection with a transmission line, one end of which is shorted. Unlike constant-wave negative-resistance oscillators, the resonant-tunneling relaxation oscillator (RTRO) emits a sequence of sharp current pulses that are mode locked to the fundamental mode of the cavity formed by the short-circuited transmission line. The phase noise in the RTRO was investigated with and without injection locking by a weak sinusoidal source. Injection-locking gain of 51 dB was measured for fundamental injection locking. Subharmonic injection locking was demonstrated out to the 12th subharmonic. Also, timing jitter as low as 200 fs was measured for an RTRO that emitted ∼ 30 ps pulses at a repetition rate of 1.1 GHz. © 1998 American Institute of Physics.
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84.30.Ng Oscillators, pulse generators, and function generators
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Diffusion of Pt in molecular beam epitaxy grown ZnSe

J. Slotte, R. Salonen, T. Ahlgren, J. Räisänen, E. Rauhala, and P. Uusimaa

Appl. Phys. Lett. 72, 2553 (1998); http://dx.doi.org/10.1063/1.121415 (3 pages) | Cited 3 times

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Diffusion of platinum in zinc selenide has been studied by the use of the 4He and 12C ion backscattering techniques. The samples were thin films grown by molecular beam epitaxy on GaAs (100) epitaxial layers followed by evaporation of platinum and annealing in the temperature range 500–800 °C. The diffusion coefficients were determined by the fitting of a concentration independent solution of the diffusion equation to the experimental depth profiles. The activation energy and the pre-exponential factor of the diffusion process were found to be 1.7 eV and 6.4×10−6 cm2/s, respectively. © 1998 American Institute of Physics.
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66.30.J- Diffusion of impurities
68.60.Wm Other nonelectronic physical properties
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
61.72.S- Impurities in crystals

Excitation of size selected nanocrystallites in porous silicon

Zain Yamani, Nicholaos Rigakis, and Munir H. Nayfeh

Appl. Phys. Lett. 72, 2556 (1998); http://dx.doi.org/10.1063/1.121416 (3 pages) | Cited 8 times

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We prepared silicon that exhibits green-to-red rainbow luminescence along the sample, reflecting gradients in the crystallite size. The excitation has a size-dependent feature, riding a smooth bulklike continuum. For the size-dependent contribution, we measured absorption band edges of 3.75 and 3.0–3.25 eV at the meniscus and opposite end. Excitation in the meniscus, monitored at the edge of the blue emission, isolates ultrasmall sizes, with “excitation coefficients” quadratic with energy, and emission encompassing much of the visible spectrum. Results are discussed in terms of quantum-confinement-induced restructuring of the diamondlike bonds to form radiative Si–Si surface states. © 1998 American Institute of Physics.
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78.55.Mb Porous materials
78.55.Ap Elemental semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.46.-w Structure of nanoscale materials

Raman analysis of short-range clustering in laser-deposited CdSxTe1−x films

A. Fischer, L. Anthony, and A. D. Compaan

Appl. Phys. Lett. 72, 2559 (1998); http://dx.doi.org/10.1063/1.121417 (3 pages) | Cited 14 times

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Raman line shapes of the longitudinal optical phonon have been analyzed for the pseudobinary alloy system CdSxTe1−x over the full alloy range. The polycrystalline thin films were grown by pulsed laser deposition at, typically, 370 °C including films with x values throughout the miscibility gap (0.06<x<0.97). Peak shift, broadening, and asymmetry arising from spatial correlation effects yield details of the microstructural clustering. The dependence of phonon coherence length on the x value cannot be explained simply from a random occupancy of the anion sublattice. We employed a linear chain model with site probabilities modified by the Warren–Cowley short-range order parameter to infer coherence lengths versus x. The data are best fit with a short-range order parameter of 0.73 at x = 1/2. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors

Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors

N. Dyakonova, A. Dickens, M. S. Shur, R. Gaska, and J. W. Yang

Appl. Phys. Lett. 72, 2562 (1998); http://dx.doi.org/10.1063/1.121418 (3 pages) | Cited 33 times

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We report on the studies of the impact ionization in AlGaN–GaN heterostructure field effect transistors in the temperature range 17–43 °C. The results show that the breakdown voltage and the characteristic electrical field Ei of the impact ionization have a positive temperature coefficient. The value of Ei at room temperature is estimated to be approximately 2.6 MV/cm, which agrees with recent theoretical prediction [J. Kolnik et al., J. Appl. Phys. 82, 726 (1997)]. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices

Capacitance measurements of junction formation and structure in polymer light-emitting electrochemical cells

I. H. Campbell, D. L. Smith, C. J. Neef, and J. P. Ferraris

Appl. Phys. Lett. 72, 2565 (1998); http://dx.doi.org/10.1063/1.121419 (3 pages) | Cited 33 times

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We present capacitance–voltage and current–voltage measurements of polymer light-emitting electrochemical cells and compare these results with steady state device model calculations. The capacitance–voltage characteristic is used to assess the formation and structure of the electrochemical junction in the device. The cell capacitance and current both increase sharply above a threshold voltage as the bias is increased. The threshold voltage for the rapid increase in capacitance is lower than that for the increase in current, indicating that the electrochemical junction begins to form prior to significant current flow. The electrochemical junction width, estimated from the capacitance measurements, is about 15 nm at a current density of 0.1 A/cm2. The steady state device model calculations are in reasonable agreement with these observations. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis
42.70.Jk Polymers and organics
78.60.Ps Chemiluminescence

Evidence of hydrogen–carbon interactions in plasma hydrogenated carbon-doped n-InP

B. Theys, J. L. Benchimol, E. V. K. Rao, J. Chevallier, and M. Juhel

Appl. Phys. Lett. 72, 2568 (1998); http://dx.doi.org/10.1063/1.121420 (3 pages) | Cited 4 times

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Unlike GaAs which is p type, InP, when doped with the amphoteric C, is known to exhibit n-type conduction but with a low carrier-to-dopant ratio. To learn more about C behavior, we have intentionally introduced atomic H in C-doped n-InP by exposing the samples to a radio-frequency deuterium plasma. We show here that C, unlike other n dopants (S, Sn, and Si), strongly interacts with H in InP. First, the distribution of deliberately introduced H closely follows that of C. Second, for all C dopings studied here, the H concentration is nearly equal to that of C. Finally, and most importantly, the electrical properties of the material are also significantly altered, for instance, the free-electron concentration increases by more than an order of magnitude in certain samples. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.S- Impurities in crystals

Silicon-based organic-inorganic microcavity and its dispersion curve from angle-resolved photoluminescence

A. Arena, S. Patanè, G. Saitta, S. Savasta, R. Girlanda, and R. Rinaldi

Appl. Phys. Lett. 72, 2571 (1998); http://dx.doi.org/10.1063/1.121421 (3 pages) | Cited 10 times

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We report an experimental study of a planar organic-inorganic microcavity consisting of a porous silicon distributed Bragg reflector, a single layer of acridina orange as active material and a top aluminum reflector. By tuning the cavity resonance energy around the maximum of the organic material photoluminescence, we found an intense emission and a spectral narrowing of the emission band to about 45 meV. The angle-resolved photoluminescence spectra enable us to determine the microcavity dispersion curve. The very good agreement with the theoretical dispersion provides a precise determination of the refractive index of the organic material. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds
78.66.Db Elemental semiconductors and insulators
78.55.Mb Porous materials

Negative electron affinity mechanism for diamond surfaces

I. L. Krainsky and V. M. Asnin

Appl. Phys. Lett. 72, 2574 (1998); http://dx.doi.org/10.1063/1.121422 (3 pages) | Cited 30 times

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The energy distribution of the secondary electrons for chemical vacuum deposited diamond films with negative electron affinity (NEA) was investigated. It was found that while for completely hydrogenated diamond surfaces the negative electron affinity peak in the energy spectrum of the secondary electrons is present for any energy of the primary electrons, for partially hydrogenated diamond surfaces there is a critical energy above which the peak is present in the spectrum. This critical energy increases sharply when hydrogen coverage of the diamond surface diminishes. This effect was explained by the change of the NEA from the true type for the completely hydrogenated surface to the effective type for the partially hydrogenated surfaces.
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73.20.At Surface states, band structure, electron density of states
79.20.Hx Electron impact: secondary emission

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

M. L. Brongersma, A. Polman, K. S. Min, E. Boer, T. Tambo, and H. A. Atwater

Appl. Phys. Lett. 72, 2577 (1998); http://dx.doi.org/10.1063/1.121423 (3 pages) | Cited 115 times

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Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si+ implantation at a fluence of 6×1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 μs for the unoxidized film to 43 μs for the film that was oxidized for 29 min. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
71.35.-y Excitons and related phenomena

Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas

Minseo Park, W. B. Choi, S. K. Streiffer, John J. Hren, and Jerome J. Cuomo

Appl. Phys. Lett. 72, 2580 (1998); http://dx.doi.org/10.1063/1.121424 (3 pages) | Cited 4 times

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Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride, and tetrahedrally bonded amorphous carbon (txa−C1−x) were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon (txa−C1−x) films. © 1998 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
68.55.-a Thin film structure and morphology

Impact of ultraviolet light during rapid thermal diffusion

S. Noël, L. Ventura, A. Slaoui, J. C. Muller, B. Groh, R. Schindler, B. Fröschle, and T. Theiler

Appl. Phys. Lett. 72, 2583 (1998); http://dx.doi.org/10.1063/1.121425 (3 pages) | Cited 5 times

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Rapid thermal processing for junction formation is emerging as a low cost technique for solar cell as well as for other semiconductor device production. Compared to conventional furnace processing, process differences are not only in very high heating and cooling rates, but also in the incoherent emitted radiation spectrum, which can act on dopant diffusion. The photons emitted from tungsten halogen lamps go from far ultraviolet, over visible to infrared light. In this work additional mercury ultraviolet lamps are used during rapid thermal annealing to analyze the influence of high energetic photons on diffusion mechanisms. The diffusion results are discussed in terms of radiation spectrum, involving analysis of diffusion profiles and sheet resistances. © 1998 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities
81.65.-b Surface treatments
61.72.Cc Kinetics of defect formation and annealing
84.60.Jt Photoelectric conversion

Abnormal photocurrent–voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes

O-Kyun Kwon, Kyu-Seok Lee, Hye Yong Chu, El-Hang Lee, and Byung-Tae Ahn

Appl. Phys. Lett. 72, 2586 (1998); http://dx.doi.org/10.1063/1.120626 (3 pages) | Cited 1 time

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We have observed the abnormal photocurrent–voltage (I–V) behavior in GaAs/AlGaAs multiple shallow quantum wells p-i-n diodes. Under the illumination of a laser, two current plateaus were developed at the negative conductance region of the I–V curve, along with some hystereses depending on the scan direction. At the first plateau, two major oscillations of ∼ 120 kHz and ∼ 37 MHz were observed with several minor oscillations of frequencies below the latter, while this latter component was uniquely at the other plateau. Analyzing the electrical and the optical oscillations, we explain that one hysteresis at the first plateau was due to the low frequency bias-circuit oscillations, whereas the other at the next plateau was attributed to the intrinsic behavior of the p-i-n diode. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Raman scattering in ion-implanted GaN

W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach

Appl. Phys. Lett. 72, 2589 (1998); http://dx.doi.org/10.1063/1.121426 (3 pages) | Cited 83 times

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Raman measurements were performed on molecular beam epitaxially grown GaN before and after implantation with Ar+, Mg+, P+, C+, and Ca+ ions. With increasing ion dose, new Raman peaks arise at 300, 360, 420, and 670 cm−1, independent of the ion species. After rapid thermal annealing at temperatures between 900 and 1150 °C for 15 s, the intensities of the Raman modes decrease with increasing temperature with the exception of the 360 cm−1 mode which shows a maximum in intensity after annealing at 900 °C. The mode at 300 cm−1 is attributed to disorder-activated Raman scattering, whereas the other three modes are assigned to local vibrations of vacancy-related defects. © 1998 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
63.20.Pw Localized modes

Creation of [110]-aligned Si quantum wires encompassed by SiO2 using low-energy separation-by-implanted-oxygen on a V-groove patterned substrate

Yukari Ishikawa, N. Shibata, and S. Fukatsu

Appl. Phys. Lett. 72, 2592 (1998); http://dx.doi.org/10.1063/1.121427 (3 pages) | Cited 2 times

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Si quantum wires (QWRs) suspended in SiO2 are successfully created on a V-groove patterned Si(001) substrate by using low-energy oxygen ion implantation. A single Si QWR aligned to [110] is formed near the bottom center of the V groove, which has a hexagonal cross section with {111} and {001} lateral facets. The development of Si QWRs was found to be controlled by the oxygen ion dose and the formation mechanism is attributed to an oxygen ion enrichment near the V-groove corner which arises from lateral ion straggling. © 1998 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Optical characterization of disordered InxGa1−xP alloys

Luisa González, Yolanda González, Maria Luisa Dotor, and Juan Martinez-Pastor

Appl. Phys. Lett. 72, 2595 (1998); http://dx.doi.org/10.1063/1.121428 (3 pages) | Cited 4 times

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We present results on the optical characterization of InxGa1−xP layers grown by atomic layer molecular beam epitaxy on GaAs (001) substrates at a growth temperature of 420 °C. Our results show that the optical characteristics of these layers, which do not show ordering effects, are strongly dependent on surface stoichiometry during growth. In this way, we can obtain either highly homogeneous alloys with a predictable band-gap energy or layers with optical properties indicative of spatial localization effects, like an anomalous behavior of photoluminescence peak energy with temperature and a large shift between the emission energy and absorption edge. © 1998 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.66.Fd III-V semiconductors
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors

Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates

Z. H. Zhu, R. Zhou, F. E. Ejeckam, Z. Zhang, J. Zhang, J. Greenberg, Y. H. Lo, H. Q. Hou, and B. E. Hammons

Appl. Phys. Lett. 72, 2598 (1998); http://dx.doi.org/10.1063/1.121429 (3 pages) | Cited 20 times

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InGaAs multiple quantum wells at 1.3 μm wavelength have been grown on a twist-bonded GaAs compliant substrate. The GaAs compliant substrate contains a 30 Å GaAs thin layer bonded to a GaAs bulk substrate with a 22-degree angle. Nomarski phase contrast microscopy, transmission electron microscopy (TEM), and photoluminescence were used to characterize the heteroepitaxial layers. The smooth and crosshatch-free surface morphology, dislocation-free cross-sectional TEM, and strong luminescence intensity all provide convincing evidences for substantial improvement of the quality of heteroepitaxial material using the compliant substrate technique. Research is underway to apply the concept and technique of compliant substrate to Si and other materials. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy

Matthew Zervos, Adam Bryant, Martin Elliott, Mathias Beck, and Marc Ilegems

Appl. Phys. Lett. 72, 2601 (1998); http://dx.doi.org/10.1063/1.121430 (3 pages) | Cited 8 times

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Silicon (Si) delta- (δ-) doped In0.53Ga0.47As layers were grown by molecular beam epitaxy on InP(001) substrates between 390 °C and 575 °C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect measurements in conjunction with self-consistent Poisson-Schrödinger modeling. Below a growth temperature of 525 °C we find good agreement with modeling, but above 525 °C a decrease in active doping level suggests possible surface aggregation, or reaction with impurities in the growth chamber. Significant surface segregation spread of the Si is only found for growth above 450 °C. There is some evidence that DX-like centers may be present, since their incorporation improves slightly the quality of the fits to subband occupancies. Samples grown at 390 °C show strong persistent photoconductivity at low temperatures, attributed to defect states in the InGaAs. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Pz Photoconduction and photovoltaic effects
61.72.S- Impurities in crystals
71.55.Eq III-V semiconductors

Photoluminescence nonlinearities in mixed type I–type II quantum well heterostructures

E. Finkman and R. Planel

Appl. Phys. Lett. 72, 2604 (1998); http://dx.doi.org/10.1063/1.121431 (3 pages)

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We report on nonlinear behavior of the intensities and the energies of photoluminescence lines in mixed type I–type II quantum well heterostructures. The structures under study consist of a single enlarged quantum well (SQW), embedded in type II short period superlattices (SPS) on both sides. The nonlinearities are interpreted considering a coupling between the electron levels in the SPS and the SQW, and a very efficient transfer of electrons from the whole structure to the well. The electron density in the SQW as well as the internal electric fields can be optically controlled to high values depending on input power intensities. The nonlinear effects, and the extension of light emission to higher energies in such structures, compared to traditional type I systems, may be of interest in potential applications. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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