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25 May 1998

Volume 72, Issue 21, pp. 2631-2766

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ERRATA

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Erratum: “Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode” [Appl. Phys. Lett. 72, 1359 (1998)]

K. Domen, A. Kuramata, and T. Tanahashi

Appl. Phys. Lett. 72, 2766 (1998); http://dx.doi.org/10.1063/1.121084 (1 page)

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Show PACS

99.10.Cd	Errata
42.55.Px	Semiconductor lasers; laser diodes
78.45.+h	Stimulated emission
85.35.Be	Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr	III-V semiconductors

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