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25 May 1998

Volume 72, Issue 21, pp. 2631-2766

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On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions

K. M. Lui, K. P. Chik, R. W. M. Kwok, W. H. Choy, and I. H. Wilson

Appl. Phys. Lett. 72, 2701 (1998); http://dx.doi.org/10.1063/1.121104 (3 pages)

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A 10 Å ultraviolet/ozone grown oxide was used as an atomic diffusion barrier in a Ge/GaAs heterostructure. Good thermal stability of the oxide layer has been demonstrated by the appearance of dendritic crystallization [K. M. Lui, K. P. Chik, and J. B. Xu, J. Appl. Phys. 81, 7757 (1997)], induced by in situ thermal pulse annealing, of the Ge overlayer. In this work, an abrupt heterointerface was revealed by aligned Rutherford backscattering spectroscopy after annealing and compared with a control with no barrier at the interface where considerable diffusion had taken place. Current–voltage measurement indicated good rectifying properties of the oxide barrier heterojunction. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
68.35.Fx Diffusion; interface formation
81.05.Cy Elemental semiconductors
81.05.Ea III-V semiconductors
72.80.Cw Elemental semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness

Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant

Haruo Yokomichi, Tohru Hayashi, and Atsushi Masuda

Appl. Phys. Lett. 72, 2704 (1998); http://dx.doi.org/10.1063/1.121105 (3 pages) | Cited 35 times

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Thermal stability of fluorinated amorphous carbon (a-C:F) thin films with a low dielectric constant was investigated by electron spin resonance (ESR), infrared (IR) absorption, optical absorption, and x-ray photoelectron spectroscopy (XPS) as well as measurements of film thickness and dielectric constant. IR and XPS measurements suggested that the strength of the CF3 and CF2 bonding configurations against annealing are weaker than that of the CF bonding configuration. ESR measurements revealed that the dangling bond density decreased by one order of magnitude after annealing at 300 °C and increased after annealing at 400 °C. Furthermore, the g value and the linewidth of the ESR spectrum decreased with increasing annealing temperature. Based on these results, the changes in structure and defect configuration are discussed. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.43.Er Other amorphous solids
76.30.Lh Other ions and impurities
73.61.Ng Insulators
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
79.60.Dp Adsorbed layers and thin films
78.66.Nk Insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface

M. Pan, S. P. Wilks, P. R. Dunstan, M. Pritchard, R. H. Williams, D. S. Cammack, and S. A. Clark

Appl. Phys. Lett. 72, 2707 (1998); http://dx.doi.org/10.1063/1.121106 (3 pages) | Cited 4 times

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In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface. © 1998 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Er doping of GaN during growth by metalorganic molecular beam epitaxy

J. Devin MacKenzie, C. R. Abernathy, S. J. Pearton, U. Hömmerich, J. T. Seo, R. G. Wilson, and John M. Zavada

Appl. Phys. Lett. 72, 2710 (1998); http://dx.doi.org/10.1063/1.121107 (3 pages) | Cited 26 times

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1.54 μm photoluminescence has been observed from GaN doped with Er during growth by metalorganic molecular beam epitaxy. Strong Er3+-related photoluminescence (PL) was measured at room temperature for GaN:Er doped during growth on c-plane Al2O3 and Si. Experiments to evaluate the effects C and O on the optical activity of Er indicated that these impurities dramatically enhance Er PL in GaN. GaN films doped with Er to a concentration of 3×1018 cm−3 with [O] ∼ 1020 cm−3 and [C] ∼ 1021 cm−3 luminesce at 1.54 μm with an intensity ∼2 orders of magnitude greater than films with oxygen and carbon backgrounds of less than 1019 cm−3. The thermal PL quenching behavior was also markedly different for samples of varying O and C content. Er3+ luminescence from samples with high O and C concentrations quenched by only 10% between 15 and 300 K while the integrated PL signal from the samples with lower [O] and [C] quenched ∼85% over the same temperature range. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Microstructural difference between platinum and silver trapped in hydrogen induced cavities in silicon

A. Kinomura, J. S. Williams, J. Wong-Leung, and M. Petravic

Appl. Phys. Lett. 72, 2713 (1998); http://dx.doi.org/10.1063/1.121108 (3 pages) | Cited 6 times

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The gettering of implanted Pt and Ag to hydrogen-induced cavities in Si has been compared for doses from 1×1013 to 1×1015 cm−2. After annealing at 850 °C for 1 h, almost 100% of both implanted metals were relocated to the cavity band for doses less than 1×1014 cm−2. At higher doses, large differences were observed in the gettering behaviour of Pt and Ag, where the amount of Pt was saturated at close to a monolayer coverage of cavity walls, whereas the Ag accumulation at cavities continually increased with dose. Cross-sectional transmission electron microscopy revealed strong differences in the ability of Pt and Ag to form a bulk phase at the cavities. The results indicate that stable silicide formation at the near-surface and trapping of Ag to implantation damage are the main processes which limit gettering at the higher doses. © 1998 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing

Nonphotolithographic fabrication of organic transistors with micron feature sizes

John A. Rogers, Zhenan Bao, and V. R. Raju

Appl. Phys. Lett. 72, 2716 (1998); http://dx.doi.org/10.1063/1.121109 (3 pages) | Cited 65 times

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This letter describes the use of micromolding in capillaries in combination with screen printing to form organic microstructures for applications in microelectronics. Fabrication of plastic transistors with micron feature sizes demonstrates the approach. The performance of these transistors compares favorably with that of similar devices constructed using conventional methods and inorganic substrates, dielectrics, and conductors. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices

Dose rate effects in focused ion beam synthesis of cobalt disilicide

Stephan Hausmann, Lothar Bischoff, Jochen Teichert, Matthias Voelskow, Dieter Grambole, Folker Herrmann, and Wolfhard Möller

Appl. Phys. Lett. 72, 2719 (1998); http://dx.doi.org/10.1063/1.121110 (3 pages) | Cited 9 times

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The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 °C it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-times. This result is explained by an enhanced damage accumulation for longer dwell-times. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
61.80.Jh Ion radiation effects

Improving the Al-bearing native-oxide/GaAs interface formed by wet oxidation with a thin GaP barrier layer

L. J. Chou, K. C. Hsieh, A. Moy, D. E. Wohlert, G. Pickrell, and K. Y. Cheng

Appl. Phys. Lett. 72, 2722 (1998); http://dx.doi.org/10.1063/1.121071 (3 pages) | Cited 3 times

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A method of improving the Al-bearing compound/GaAs interface against water vapor oxidation has been demonstrated. Amorphous native oxide formed by wet oxidation of an amorphous (Ga, As)/(Al, As) heterostructure on GaAs has exhibited an improved oxide/semiconductor interface with the incorporation of a thin GaP barrier layer of about two monolayers on the GaAs substrate. High resolution transmission electron microscopy shows an interfacial roughness on the order of 15 Å, and an enhancement of photoluminescence of three order of magnitude as compared to the as-grown counterpart without a GaP barrier indicates a great reduction in interface electronic traps. Having an improved interfacial roughness, a reduced interface trap density and an amorphous native oxide, this technique has a potential use in GaAs-based metal-oxide-semiconductor field-effect transistors. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states

Large band gap bowing of InxGa1−xN alloys

M. D. McCluskey, C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson

Appl. Phys. Lett. 72, 2725 (1998); http://dx.doi.org/10.1063/1.121072 (2 pages) | Cited 110 times

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Band gap measurements have been performed on strained InxGa1−xN epilayers with x ⩽ 0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. At x = 0.125 the calculated bowing parameter is b = 3.5 eV, in good agreement with the experimental values. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
73.61.Ey III-V semiconductors

High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800–850 nm wavelength operation

M. S. Ünlü, M. Gökkavas, B. M. Onat, E. Ata, E. Özbay, R. P. Mirin, K. J. Knopp, K. A. Bertness, and D. H. Christensen

Appl. Phys. Lett. 72, 2727 (1998); http://dx.doi.org/10.1063/1.121073 (3 pages) | Cited 19 times

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High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The detectors exhibit a peak quantum efficiency of η = 0.5 at λ = 827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
42.79.Wc Optical coatings

Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy

R. Teissier, J.-L. Pelouard, and F. Mollot

Appl. Phys. Lett. 72, 2730 (1998); http://dx.doi.org/10.1063/1.121682 (3 pages) | Cited 7 times

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The electroluminescence signal emitted from operating InP-based heterojunction bipolar transistors (HBT) is analyzed, giving clear evidence of ballistic electron transport through the base. The luminescence signal is studied as a function of base thickness, providing direct access to the ballistic electron mean free path. This continuous wave technique proves to be very efficient to measure ballistic electron scattering rates: 30 fs at 77 K and 19 fs at 300 K for a base Be doped to 1019 cm−3.Quasiballistic transport range is found to be comparable to base width accessible by state of the art device technology, demonstrating its importance for ultrafast HBT operation. © 1998 American Institute of Physics.
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85.30.Pq Bipolar transistors
72.80.Ey III-V and II-VI semiconductors
78.60.Fi Electroluminescence
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Epitaxial growth of CuInS2 on sulphur terminated Si(001)

Th. Hahn, H. Metzner, B. Plikat, and M. Seibt

Appl. Phys. Lett. 72, 2733 (1998); http://dx.doi.org/10.1063/1.121074 (3 pages) | Cited 16 times

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Using three-source molecular beam epitaxy, we demonstrate the direct heteroepitaxial growth of the direct semiconductor CuInS2 on silicon (001) substrates. The pretreatment of the silicon wafers includes a high-temperature exposure to the sulphur beam which leads to an ideal (1×1) sulphur-terminated surface defining the starting condition for successful epitaxy. All stages of the growth process were controlled in situ using Auger electron spectroscopy and low energy electron diffraction. Furthermore, the epitaxial layers were characterized by means of x-ray diffraction methods and by transmission electron microscopy. It is shown that the CuInS2 epilayers grow with a tetragonal structure which is clearly distinct from chalcopyrite. © 1998 American Institute of Physics.
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81.05.Hd Other semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
79.20.Fv Electron impact: Auger emission

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

Maria Jose Caturla, Mark D. Johnson, and T. Diaz de la Rubia

Appl. Phys. Lett. 72, 2736 (1998); http://dx.doi.org/10.1063/1.121075 (3 pages) | Cited 39 times

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We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 °C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
81.05.Cy Elemental semiconductors
02.50.Ng Distribution theory and Monte Carlo studies
02.70.Rr General statistical methods
61.72.Yx Interaction between different crystal defects; gettering effect

Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC

M. Gong, C. V. Reddy, C. D. Beling, S. Fung, G. Brauer, H. Wirth, and W. Skorupa

Appl. Phys. Lett. 72, 2739 (1998); http://dx.doi.org/10.1063/1.121076 (3 pages) | Cited 18 times

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Deep traps in the boron extended tail region of ion implanted 6H–SiC pn junctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of ∼ 1016 cm−3 of the D center have been observed through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron acceptor in this region, but an induced hole trap Ih at EV+0.46 eV is found under cold implantation conditions. These results support the picture of the extended tail, rich in boron-vacancy complexes such as the D center, which forms as a result of vacancy enhanced indiffusion. The dominance of the electrically active D center in the depletion layer of the technologically important SiC pn junction diode suggests the need for further research in this area. © 1998 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals
61.72.Cc Kinetics of defect formation and annealing
85.30.Kk Junction diodes
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters
66.30.Lw Diffusion of other defects

Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

J. J. Wierer, P. W. Evans, N. Holonyak, and D. A. Kellogg

Appl. Phys. Lett. 72, 2742 (1998); http://dx.doi.org/10.1063/1.121445 (3 pages) | Cited 11 times

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Vertical cavity surface emitting lasers (VCSELs) are demonstrated with high-index-contrast native-oxide-based (AlxOy) distributed Bragg reflectors (DBRs) on both sides of a “2λ” cavity, thus creating a compact (thin, ∼ 2.8 μm) laser structure. Selective oxidation of high Al composition AlxGa1−xAs layers yields a structure with a four period upper AlxOy/GaAs DBR, a 5.5 period lower AlxOy/GaAs DBR, and a buried oxide current aperture. A reverse-biased tunnel contact junction provides hole injection via lateral electron current between the upper DBR and the oxide aperture layer. These VCSELs operate with submilliampere thresholds, high spontaneous efficiencies, and excellent polarization control. © 1998 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.Mq Oxidation
81.05.Ea III-V semiconductors
42.79.Bh Lenses, prisms and mirrors

Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

X. Z. Dang, C. D. Wang, E. T. Yu, K. S. Boutros, and J. M. Redwing

Appl. Phys. Lett. 72, 2745 (1998); http://dx.doi.org/10.1063/1.121077 (3 pages) | Cited 28 times

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Persistent photoconductivity effects have been characterized in n-type Al0.15Ga0.85N/GaN heterostructures using both monochromatic light and room light illumination. Time constants of ∼ 1×104 s have been observed, and measurements of photocurrent specta performed using various illumination geometries and techniques have shown that defect levels exist in both the Al0.15Ga0.85N and GaN layers. Broad distributions of defect levels with excitation energies lower than the bandgap energies are found in both Al0.15Ga0.85N and GaN, and evidence is observed that these levels contribute significantly to the aforementioned persistent photoconductivity effects. The photocurrent spectra also reveal the presence of a level with an excitation energy of 3.36 eV that contributes to the persistent photoconductivity in the heterostructure. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions

Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

M. Seck, R. A. B. Devine, C. Hernandez, Y. Campidelli, and J.-C. Dupuy

Appl. Phys. Lett. 72, 2748 (1998); http://dx.doi.org/10.1063/1.121078 (3 pages) | Cited 7 times

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Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) absorption have been studied in thin oxides of Si1−xGex grown by plasma oxidation. SIMS analysis reveals that Ge can migrate to the oxide film surface leaving the oxide in the SiGe interface region Ge-depleted. This is in contrast to thermally grown oxides. Water selectively attacks the Ge-rich part of the oxide. In the FTIR spectra of the SiGe oxides, specific peaks identified with the vibration of O in Si–O–Ge and Ge–O–Ge bonds have been observed for the first time. These latter observations confirm that for the plasma oxidized films, the Ge is chemically bonded in the oxide network. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
61.50.Lt Crystal binding; cohesive energy
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
78.30.Hv Other nonmetallic inorganics
63.20.-e Phonons in crystal lattices
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