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1 Jun 1998

Volume 72, Issue 22, pp. 2779-2913

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Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen

Haruhiko Ono, Taeko Ikarashi, and Atsushi Ogura

Appl. Phys. Lett. 72, 2853 (1998); http://dx.doi.org/10.1063/1.121479 (3 pages) | Cited 10 times

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The formation process of buried oxide in low-dose oxygen-implanted wafers was investigated using Fourier-transform infrared absorption spectroscopy. In the wafers as-implanted with oxygen, the peak position of the Si–O–Si asymmetric stretching mode was observed to be lower in wave numbers for the lower dose samples, in which the oxygen atoms are buried as substoichiometric silicon oxide with small stress. Therefore, we conclude that the frequency shift is not caused by compressive stress but by the substoichiometry of the buried oxide. After annealing at over 600 °C, the buried oxide starts to form stoichiometric silicon dioxide, and completes it at over 1200 °C. However, we also found that some amount of oxygen atoms diffuse out of the wafer at a temperature over 1000 °C. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.66.Nk Insulators
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.30.Hv Other nonmetallic inorganics

Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy

R. A. Hogg, K. Suzuki, K. Tachibana, L. Finger, K. Hirakawa, and Y. Arakawa

Appl. Phys. Lett. 72, 2856 (1998); http://dx.doi.org/10.1063/1.121480 (3 pages) | Cited 11 times

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We report an optical spectroscopic study of GaSb/GaAs quantum dots (QDs) formed by the Stranski–Krastanow growth mode using molecular beam epitaxy. We identify the QD luminescence by photoluminescence obtained at different excitation energies and densities. We show that, for these structures, not only the spectral position of peaks, but also their relative intensities are critically dependent upon the density of photogenerated carriers. Photoluminescence excitation (PLE) measurements confirm our assignment of the QD related peaks and a feature ∼25–27 meV higher in energy than the PLE detection energy is discussed in terms of phonon relaxation. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

E. Tournié, V. Bousquet, and J.-P. Faurie

Appl. Phys. Lett. 72, 2859 (1998); http://dx.doi.org/10.1063/1.121482 (3 pages) | Cited 6 times

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We study through reflection high-energy electron diffraction (RHEED) the growth by molecular-beam epitaxy of the II-VI compound-semiconductor BeTe on GaAs substrates. Long lasting RHEED oscillations reveal that BeTe nucleates on GaAs buffer layers in a two-dimensional mode when the GaAs surface is not Te reacted. The growth temperatures of BeTe and ZnSe are only marginally compatible. We show that the Te- and Be- terminated BeTe surfaces are (2×1) and (3×1) reconstructed, respectively. The transition from (2×1) to (3×1) surface occurs via the formation of a faint (4×1) reconstruction. We determine the surface phase diagram under static as well as growing conditions. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Solid phase recrystallization of ZnS thin films on sapphire

Z. Z. Bandić, E. C. Piquette, J. O. McCaldin, and T. C. McGill

Appl. Phys. Lett. 72, 2862 (1998); http://dx.doi.org/10.1063/1.121483 (3 pages) | Cited 12 times

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High quality ZnS thin films are important for light emitting diodes based on ZnS, which is a very efficient phosphor. To improve as grown, molecular beam epitaxial, (111)-oriented cubic ZnS films, where defects were introduced due to the large mismatch between ZnS and a sapphire substrate ( ∼ 20%), the ZnS was recrystallized by annealing at temperatures in the 825–1000 °C range, and sulfur pressures of 10 atm. The films have been structurally characterized by high-resolution x-ray diffraction, and electron diffraction by electron channeling patterns. Structural properties of the films annealed at temperatures above 900° have improved significantly. Tilting in the recrystallized films has been reduced more than tenfold, with the recrystallized grains being defect-free. Most films were recrystallized in the as-grown, cubic form, as shown by electron channeling patterns. The surfaces of the films have been inspected with scanning electron microscope, and on most samples they have been found to remain smooth, although on some of the films annealed at elevated temperatures we have observed hexagonal pits. The role of sulfur gas overpressure in the recrystallization has been discussed, and possible effects on film evaporation, grain boundary migration and compliancy of sapphire substrate have been analyzed. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Mm Grain and twin boundaries

Lateral photocurrent spreading in single quantum well infrared photodetectors

M. Ershov

Appl. Phys. Lett. 72, 2865 (1998); http://dx.doi.org/10.1063/1.121481 (3 pages) | Cited 7 times

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Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under nonuniform illumination over the detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is determined by the in-plane conductivity of the carriers in the QW and characteristic time of the QW recharging, and can be as large as 101–104 μm. Closed-form analytical expressions for SQWIP responsivity for modulated infrared signal and modulation transfer function are obtained. Possible techniques to suppress lateral photocurrent spreading are discussed. © 1998 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.66.-w Optical properties of specific thin films
73.61.-r Electrical properties of specific thin films
42.30.Lr Modulation and optical transfer functions
85.30.De Semiconductor-device characterization, design, and modeling

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

J. Z. Li, J. Y. Lin, H. X. Jiang, and M. A. Khan

Appl. Phys. Lett. 72, 2868 (1998); http://dx.doi.org/10.1063/1.121485 (3 pages) | Cited 9 times

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Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures. © 1998 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Eq III-V semiconductors
42.79.Pw Imaging detectors and sensors

Doping effect of viologen on photoconductive device made of poly (p-phenylenevinylene)

J. Y. Park, S. B. Lee, Y. S. Park, Y. W. Park, C. H. Lee, J. I. Lee, and H. K. Shim

Appl. Phys. Lett. 72, 2871 (1998); http://dx.doi.org/10.1063/1.121486 (3 pages) | Cited 15 times

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We report the photovoltaic properties of the donor–acceptor composite system of poly (p-phenylenevinylene) (PPV) and viologen. We observed the significant enhancement of photocurrent with increasing the doping ratio of viologen. The maximum photocurrent of viologen-doped PPV was nine times as high as that of the pristine PPV. The maximum quantum yield and photosensitivity are 13% (electron/photon) and 0.05 A/W, respectively, at low bias voltage (−2 V). The increase of photocurrent is explained with the efficient charge separation that resulted from the transfer of photoexcited electrons from PPV to viologen. The mixture of PPV and viologen can be used as a sensitive photodiode material. © 1998 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Qk Reinforced polymers and polymer-based composites
73.50.Pz Photoconduction and photovoltaic effects

Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure

Chun-sung Chiang, Chun-ying Chen, Jerzy Kanicki, and Kazushige Takechi

Appl. Phys. Lett. 72, 2874 (1998); http://dx.doi.org/10.1063/1.121484 (3 pages) | Cited 10 times

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We use a new hydrogenated amorphous silicon (a-Si:H) device structure, the gated-four-probe a-Si:H thin-film transistor (TFT), to investigate the intrinsic channel characteristics of inverted-staggered a-Si:H TFTs without the influence of source/drain series resistances. The experimental results have shown that, for the conventional a-Si:H TFT structure, the field-effect mobility, threshold voltage, and field-effect channel conductance activation energy have a strong dependence on a-Si:H thickness and TFT channel length. On the other hand, for the gated-four-probe a-Si:H TFT structure, these values are a-Si:H thickness and TFT channel length independent, clearly indicating that this new a-Si:H TFT structure can be effectively used to measure the channel intrinsic properties of a-Si:H TFTs. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors

High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing

N. Frangis, J. Van Landuyt, R. Larciprete, S. Martelli, E. Borsella, S. Chiussi, J. Castro, and B. León

Appl. Phys. Lett. 72, 2877 (1998); http://dx.doi.org/10.1063/1.121487 (3 pages) | Cited 2 times

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Pulsed laser induced epitaxy has been used to produce graded heteroepitaxial SixGe(1−x) alloy layers on Si(100) wafers by melting an a-Ge film, previously grown by laser induced chemical vapor deposition, together with part of the wafer itself. High resolution electron microscopy and x-ray photoelectron spectroscopy analyses of SixGe(1−x) alloys suggest the formation of two sublayers; a strained one starting from the substrate up to Ge concentration of about 10–15 at. % and a partially relaxed one on top. The complete crystallization of the alloy without the formation of precipitates and with low threading dislocation density, proves that the combination of these laser-induced techniques represents a new and alternative process for the attainment of high quality SixGe(1−x) heterostructures. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Hd Other semiconductors

GaN microcavities: Giant Rabi splitting and optical anisotropy

Alexey Kavokin and Bernard Gil

Appl. Phys. Lett. 72, 2880 (1998); http://dx.doi.org/10.1063/1.121488 (2 pages) | Cited 34 times

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Numerical simulation of light reflection from a λ/2 GaN microcavity with Ga0.8Al0.2N/Ga0.5Al0.5N Bragg mirrors grown on the A surface of Al2O3 revealed a Rabi splitting of the order of 50 meV and remarkable optical anisotropy. These effects are originated from the giant exciton oscillator strength in GaN and a pronounced uniaxial strain in the structure. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Electrical properties of PdGe ohmic contacts to GaAs/AlxGa1−xAs heterostructures at liquid helium temperature

S. V. Morozov, Yu. V. Dubrovskii, V. N. Abrosimova, and J. Würfl

Appl. Phys. Lett. 72, 2882 (1998); http://dx.doi.org/10.1063/1.121489 (3 pages) | Cited 1 time

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Nonlinear features in the electrical behavior of PdGe-based sintered ohmic contacts to the GaAs/AlxGa1−xAs heterostructures with two-dimensional electron gas (2DEG) were investigated both in magnetic field and at the liquid helium temperature. It was shown that current flow under the contacts has multilayer structure. The 2DEG exists under contact metallization with the decreased electron concentration as compared with the 2DEG under uncovered surface. The main contribution to the resistance between the metallization and the 2DEG is due to the heterojunction between the cap layer and the 2DEG and has tunneling nature. © 1998 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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Radio-frequency amplifier based on a niobium dc superconducting quantum interference device with microstrip input coupling

Michael Mück, Marc-Olivier André, John Clarke, Jost Gail, and Christoph Heiden

Appl. Phys. Lett. 72, 2885 (1998); http://dx.doi.org/10.1063/1.121490 (3 pages) | Cited 38 times

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A dc superconducting quantum interference device (SQUID) was used to amplify radio-frequency signals that were coupled to one end of the microstrip formed by the input coil and the SQUID washer. For one device, the resonant frequency of the microstrip was increased from about 200 to 620 MHz by progressively shortening the length of the coil. At an operating temperature of 4.2 K, the gain was typically 18 dB, and the system noise temperature ranged from 0.5±0.3 K at 80 MHz to 3.0±0.7 K at 500 MHz. © 1998 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.40.Az Waveguides, transmission lines, striplines
84.30.Le Amplifiers

Superconducting Nd1.85Ce0.15CuO4−y bicrystal grain boundary Josephson junctions

S. Kleefisch, L. Alff, U. Schoop, A. Marx, R. Gross, M. Naito, and H. Sato

Appl. Phys. Lett. 72, 2888 (1998); http://dx.doi.org/10.1063/1.121449 (3 pages) | Cited 12 times

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We have studied the electric transport properties of symmetrical [001] tilt Nd1.85Ce0.15CuO4−y (NCCO) bicrystal grain boundary Josephson junctions (GBJs) fabricated on SrTiO3 bicrystal substrates with misorientation angles of 24° and 36.8°. The superconducting properties of the NCCO GBJs are similar to those of GBJs fabricated from the hole doped high temperature superconductors (HTS). The critical current density Jc decreases strongly with increasing misorientation angle. The products of the critical current Ic and the normal resistance Rn ( ∼ 100 μV at 4.2 K) are small compared to the gap voltage and fit well to the universal scaling law IcRn∝math found for GBJs fabricated from the hole doped HTS. This suggests that the symmetry of the order parameter, which most likely is different for the electron and the hole doped HTS, has little influence on the characteristic properties of symmetrical [001] tilt GBJs. © 1998 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.72.-h Cuprate superconductors
74.25.Sv Critical currents
61.72.Mm Grain and twin boundaries

Measurement of the magnetic induction vector in superconductors using a double-layer Hall sensor array

Y. Abulafia, M. McElfresh, A. Shaulov, Y. Yeshurun, Y. Paltiel, D. Majer, H. Shtrikman, and E. Zeldov

Appl. Phys. Lett. 72, 2891 (1998); http://dx.doi.org/10.1063/1.121450 (3 pages) | Cited 3 times

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We describe an experimental technique for simultaneous measurement of both the normal (Bz) and the in-plane (Bx) components of the magnetic induction field near the surface of a superconducting sample. This technique utilizes a novel design of a double-layered Hall sensor array fabricated from a GaAs/AlGaAs heterostructure containing two parallel layers of a two-dimensional electron gas. The effectiveness of this technique is demonstrated in measurements of Bx and Bz and the current distribution at the surface of a thin YBa2Cu3O7 crystal. © 1998 American Institute of Physics.
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07.55.-w Magnetic instruments and components
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
74.72.-h Cuprate superconductors
74.25.Ha Magnetic properties including vortex structures and related phenomena
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Imprinting magnetic structures

G. P. Felcher, W. Lohstroh, H. Fritzsche, M. Münzenberg, H. Maletta, and W. Felsch

Appl. Phys. Lett. 72, 2894 (1998); http://dx.doi.org/10.1063/1.121451 (3 pages) | Cited 4 times

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We created helical magnetic structures by depositing in sequence layers of lanthanum and iron (each 30 Å thick) on a substrate rotating in a fixed field of a few Oe. The magnetic field was sufficient to define the magnetization of each layer during growth without disturbing the magnetization of the layers already formed. As a result, the imprinted helical magnetic structure had a chirality given by the direction of rotation of the substrate; the pitch was given by the speed of rotation and the rate of deposition. This finding indicates that it is possible to engineer mesoscopic magnetic structures. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Cd Deposition by sputtering
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effective magnetostriction of magnetostrictive composites

Ce-Wen Nan

Appl. Phys. Lett. 72, 2897 (1998); http://dx.doi.org/10.1063/1.121452 (3 pages) | Cited 28 times

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An analytical method is developed for the effective magnetostriction of magnetostrictive composites based on Green’s function technique. For an elastically isotropic composite of magnetostrictive and nonmagnetostrictive phases, the analytical results give explicit effective-medium approximate formulas for the effective magnetostriction that fit well with available experimental data for SmFe2-based composites. © 1998 American Institute of Physics.
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75.50.Bb Fe and its alloys
75.80.+q Magnetomechanical effects, magnetostriction
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Scanning thermal microscopy using batch fabricated thermocouple probes

G. Mills, H. Zhou, A. Midha, L. Donaldson, and J. M. R. Weaver

Appl. Phys. Lett. 72, 2900 (1998); http://dx.doi.org/10.1063/1.121453 (3 pages) | Cited 42 times

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We have developed scanning thermal microscopy probes for high resolution analysis of thermal properties in an atomic force microscope (AFM). Electron beam lithography and silicon micromachining have been used to batch fabricate Au/Pd thermocouples situated at the end of Si3N4 cantilevers. The cantilevers are patterned on the side of traditional style pyramidal AFM tips, giving a new shape of probe which is favorable for access to specimens containing significant topographic variation. Tip radius is approximately 50 nm and the probe has a macroscopic opening angle of 70°. The probes were scanned in the repulsive mode using a conventional AFM. Force feedback was optically employed to give topographic and thermal maps simultaneously by maintaining a constant force of approximately 5 nN. During initial scans using a photothermal test specimen, 80 nm period metal gratings were thermally resolved. © 1998 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.20.Dt Thermometers

In situ observation of electric field induced agglomeration of carbon black in epoxy resin

Torsten Prasse, Lionel Flandin, Karl Schulte, and Wolfgang Bauhofer

Appl. Phys. Lett. 72, 2903 (1998); http://dx.doi.org/10.1063/1.121454 (3 pages) | Cited 40 times

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This letter reports on the influence of a static electric field applied by metal electrodes on the agglomeration process of carbon black (CB) in epoxy resin. The growth of dendrites from the anode into the material is observed in situ by optical transmission microscopy. A percolating network is seen to form, combined with a drastic reduction in the sample resistivity. This behavior can be explained by taking into account the electrostatic interaction of the charged CB particles. The final resistance for composites with a given CB content can be controlled within a range of several decades by varying the applied voltage and the curing temperature of the mixture. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
82.70.-y Disperse systems; complex fluids

Micro-electromagnets for atom manipulation

M. Drndić, K. S. Johnson, J. H. Thywissen, M. Prentiss, and R. M. Westervelt

Appl. Phys. Lett. 72, 2906 (1998); http://dx.doi.org/10.1063/1.121455 (3 pages) | Cited 62 times

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Micro-electromagnets for atom manipulation have been constructed, including magnetic mirrors (serpentine patterns) and traps (circular patterns). They consist of planar micron-scale Au wires on sapphire substrates fabricated using lithography and electroplating. At liquid nitrogen or helium temperatures in vacuum the wires support currents of several amperes with current density ∼ 108 A/cm2 and power dissipation ∼ 10 kW/cm2, and they produce magnetic fields to 0.3 T and gradients to 103 T/cm. The micro-electromagnet mirror was used to deflect a beam of metastable helium atoms at grazing angles ∼ 0.5 mrad. © 1998 American Institute of Physics.
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41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles
07.55.Db Generation of magnetic fields; magnets
03.75.Be Atom and neutron optics
37.20.+j Atomic and molecular beam sources and techniques

Electron emission mechanism from cubic boron nitride-coated molybdenum emitters

B. L. McCarson, R. Schlesser, M. T. McClure, and Z. Sitar

Appl. Phys. Lett. 72, 2909 (1998); http://dx.doi.org/10.1063/1.121492 (3 pages) | Cited 10 times

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The energy distribution of field-emitted electrons from Mo tips coated with intrinsic cubic boron nitride (c-BN) was studied in an effort to determine the origin of the emitted electrons. Voltage-dependent field-emission energy distribution (V-FEED) spectra were collected from the Mo emitters under ultra-high-vacuum conditions both before and after being coated. Emission current at a given voltage increased by as much as two orders of magnitude for the c-BN-coated emitters relative to bare emitters. The energy of field-emitted electrons from the c-BN-coated emitters was linearly dependent upon the applied voltage. Extrapolation of V-FEED data from c-BN-coated emitters to the flatband condition evidenced that the electrons were emitted from the conduction-band minimum of the c-BN coating at the c-BN/vacuum interface. © 1998 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.20.At Surface states, band structure, electron density of states

A nanotube-based field-emission flat panel display

Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai, E. W. Seelig, and R. P. H. Chang

Appl. Phys. Lett. 72, 2912 (1998); http://dx.doi.org/10.1063/1.121493 (2 pages) | Cited 293 times

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A matrix addressable diode flat panel display has been fabricated using a carbon nanotube–epoxy composite as the electron emission source. Field-emission uniformity has been confirmed by measuring the I–V curves of pixels across the panel. This prototype display demonstrates well-lit pixels under ±150 V biasing signals. The “on” and “off” of the pixels are well controlled by the half voltage “off-pixel” method. Further improvement of this technology may lead to easy-to-make and inexpensive flat panel displays. © 1998 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
79.70.+q Field emission, ionization, evaporation, and desorption
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.82.Rx Nanocrystalline materials
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
61.46.-w Structure of nanoscale materials
81.65.Cf Surface cleaning, etching, patterning
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