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1 Jun 1998

Volume 72, Issue 22, pp. 2779-2913

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Influence of W via on the mechanism of electromigration failure in Al–0.5 Cu interconnects

H. A. Le, N. C. Tso, T. A. Rost, and C.-U. Kim

Appl. Phys. Lett. 72, 2814 (1998); http://dx.doi.org/10.1063/1.121467 (3 pages) | Cited 2 times

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This letter reports the effects of via current density on electromigration (EM) failure in Al–0.5 Cu conductors. Two-level metallization structures, differing in the number of feeding vias (1, 6, and 15), were made with the same pattern of Al lines at two levels to allow simultaneous EM testing of upper- and lower-level lines. It was established that the lower-level lines were more susceptible to the impact of the via, resulting in a failure by the formation of a local void beneath a via and a strong dependence of EM lifetime on the via current density. The results led to a phenomenological equation that incorporates via structure into failure kinetics. © 1998 American Institute of Physics.  
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Adsorption-controlled growth of Bi4Ti3O12 by reactive MBE

C. D. Theis, J. Yeh, D. G. Schlom, M. E. Hawley, G. W. Brown, J. C. Jiang, and X. Q. Pan

Appl. Phys. Lett. 72, 2817 (1998); http://dx.doi.org/10.1063/1.121468 (3 pages) | Cited 25 times

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Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, c-axis oriented, epitaxial films is achieved by supplying a large overabundance of bismuth and ozone continuously to the surface of the depositing film. Titanium is supplied to the film in the form of shuttered bursts each containing a three monolayer dose of titanium to grow one formula unit of Bi4Ti3O12. It is seen from measured film thickness, Rutherford backscattering spectrometry composition measurements, monitoring of reflection high-energy electron diffraction half-order intensity oscillations during growth, and in situ flux measurements using atomic absorption spectroscopy that at suitable temperature and ozone background pressure, the titanium sticking coefficient approaches one and the excess bismuth desorbs from the surface. Film growth proceeds by the formation of mounds whose step heights are predominantly integral multiples of a half-unit cell.© 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitors

Sufi Zafar, Robert E. Jones, Peir Chu, Bruce White, Bo Jiang, Deborah Taylor, Peter Zurcher, and Sherry Gillepsie

Appl. Phys. Lett. 72, 2820 (1998); http://dx.doi.org/10.1063/1.121495 (3 pages) | Cited 54 times

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In this letter, we report the results for capacitance versus frequency measurements on a set of Ba0.5Sr0.5TiO3 (BST) capacitors with platinum electrodes (Pt) and varying BST film thicknesses. The study shows that Pt/BST interfacial capacitance is independent of frequency whereas the bulk dielectric constant has a power law dependence on frequency. Also, the bulk dielectric constant is observed to decrease whereas the interfacial capacitance increases with increasing temperature. In addition, we report the dependence of dielectric dispersion on BST film thickness and temperature. Calculations are performed which provide insights into the observed dispersion effects. © 1998 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)

Crystallization of amorphous (Ba, Sr)TiO3/MgO(001) thin films

D. Y. Noh, H. H. Lee, T. S. Kang, and J. H. Je

Appl. Phys. Lett. 72, 2823 (1998); http://dx.doi.org/10.1063/1.121469 (3 pages) | Cited 11 times

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The crystallization of amorphous BaxSr1−xTiO3 (BST) thin films was studied in a synchrotron x-ray scattering experiment. In a 550 Å thick film, the crystallization to perovskite phase was occurred at around 700 °C, while a 5500 Å thick film became crystalline at 500 °C. The thickness dependence of the crystallization was attributed to the observed intermediate phase nucleated near 600 °C at the interface. In thin films, high annealing temperature was required due to the energy barrier between the perovskite phase and the intermediate phase. In the thick film, the perovskite phase was nucleated directly from the amorphous phase in the bulk of the film concurrent to the nucleation of the intermediate phase at the interface. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Er Other amorphous solids
81.15.Cd Deposition by sputtering
61.72.Cc Kinetics of defect formation and annealing
78.70.Ck X-ray scattering

Phases of cobalt-iron ternary disilicides

I. Dézsi, Cs. Fetzer, I. Szucs, G. Langouche, and A. Vantomme

Appl. Phys. Lett. 72, 2826 (1998); http://dx.doi.org/10.1063/1.121470 (3 pages) | Cited 3 times

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Cobalt–iron transition-metal disilicides were investigated by Mössbauer effect and x-ray diffraction in order to determine the concentration range of their homogeneous and separate phase formation. Except at low Co or Fe concentrations, Co and Fe formed separate CoSi2 and FeSi2 phases. Up to 10 at % Co was found soluble in β-FeSi2; Fe dissolved in CoSi2 below 1.5 at % and was positioned at two different sites of cubic symmetry. The results obtained for the phase formation in thin layers of epitaxial CoSi2 on Si implanted with Fe were in agreement with the results obtained for the bulk samples. © 1998 American Institute of Physics.
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81.30.Dz Phase diagrams of other materials
61.66.Fn Inorganic compounds
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
76.80.+y Mössbauer effect; other γ-ray spectroscopy

Extension of Tsu-Esaki model for effective mass effects in resonant tunneling

J. N. Schulman

Appl. Phys. Lett. 72, 2829 (1998); http://dx.doi.org/10.1063/1.121471 (3 pages) | Cited 7 times

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The Tsu-Esaki model for resonant tunneling is extended to include the effects of differing in-plane masses in the emitter and well. The improvement produces features in the current versus voltage characteristic previously thought to require a much higher level of theoretical sophistication. The interband tunneling case can for the first time also be included in this simple and convenient framework. Calculations demonstrate that the first order contribution to the magnitude of the negative resistance is due to the mass difference, even when the same semiconductor is used in the emitter and well. A simple analytical SPICE-compatible I(V) formula is also derived. © 1998 American Institute of Physics.  
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.50.Fq High-field and nonlinear effects
72.20.Ht High-field and nonlinear effects
73.40.Gk Tunneling
85.35.Ds Quantum interference devices
73.23.-b Electronic transport in mesoscopic systems

Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

Joon Seop Kwak, Hong Koo Baik, Jong-Hoon Kim, and Sung-Man Lee

Appl. Phys. Lett. 72, 2832 (1998); http://dx.doi.org/10.1063/1.121472 (3 pages) | Cited 3 times

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In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films. © 1998 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Mm Grain and twin boundaries
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