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15 Jun 1998

Volume 72, Issue 24, pp. 3097-3228

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Electronic states tuning of InAs self-assembled quantum dots

J. M. García, T. Mankad, P. O. Holtz, P. J. Wellman, and P. M. Petroff

Appl. Phys. Lett. 72, 3172 (1998); http://dx.doi.org/10.1063/1.121583 (3 pages) | Cited 86 times

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We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. © 1998 American Institute of Physics.  
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti

Appl. Phys. Lett. 72, 3175 (1998); http://dx.doi.org/10.1063/1.121584 (3 pages) | Cited 64 times

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In this letter we report on a metal–semiconductor–metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 μm, with a maximum responsivity of 0.24 A/W at 1.3 μm under a 1 V bias. A response time of about 2 ns has been measured. © 1998 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors

Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

M. Mamor, F. D. Auret, S. A. Goodman, W. E. Meyer, and G. Myburg

Appl. Phys. Lett. 72, 3178 (1998); http://dx.doi.org/10.1063/1.121585 (3 pages) | Cited 4 times

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Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique. © 1998 American Institute of Physics.
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61.80.Jh Ion radiation effects
71.55.Cn Elemental semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
73.61.Cw Elemental semiconductors

Materials integration of gallium arsenide and silicon by wafer bonding

P. Kopperschmidt, S. Senz, G. Kästner, D. Hesse, and U. M. Gösele

Appl. Phys. Lett. 72, 3181 (1998); http://dx.doi.org/10.1063/1.121586 (3 pages) | Cited 12 times

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We present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in diameter were hydrophobically bonded to commercially available 3 in. silicon-on-sapphire wafers at room temperature. After successive annealings in hydrogen and arsenic atmospheres at temperatures up to 850 °C the Si/GaAs interfacial energy was increased by the formation of strong covalent bonds. Due to the difference in the lattice constants of about 4.1%, extra Si lattice planes were observed at the interface. No threading dislocations were introduced into the GaAs. © 1998 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
68.35.Ct Interface structure and roughness
81.05.Cy Elemental semiconductors
81.05.Ea III-V semiconductors
61.66.Bi Elemental solids
61.66.Fn Inorganic compounds
61.50.Lt Crystal binding; cohesive energy
68.35.Md Surface thermodynamics, surface energies
61.72.Cc Kinetics of defect formation and annealing

Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

R. C. Tu, Y. K. Su, H. J. Chen, Y. S. Huang, and S. T. Chou

Appl. Phys. Lett. 72, 3184 (1998); http://dx.doi.org/10.1063/1.121587 (3 pages) | Cited 2 times

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The temperature-dependent optical properties of ZnTe epilayers grown on GaAs substrates by molecular beam epitaxy with and without ZnSe/ZnTe strained-layer superlattice (SLS) buffer layers have been studied using contactless electroreflectance (CER) and piezoreflectance (PzR). Our ZnTe epilayers of 1.5 μm in thickness grown on GaAs substrates are under a biaxial tensile strain according to the results shown in CER and PzR spectra. Furthermore, the strain induced energy splitting between heavy- and light-hole valence bands in the ZnTe epilayer can be reduced by using the ZnSe/ZnTe SLS buffer layers. We have also justified the temperature-dependent energy splitting between heavy- and light-hole valence bands for ZnTe through theoretical calculations. Discrepancy between experiments and calculations indicates that the residual mismatch-induced strain as well as the thermally induced strain during cooling must be taken into account at the same time. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Electrical evaluation of damage on the sidewalls of InP mesa structures fabricated by reactive ion etching with methane and hydrogen

Norio Yamamoto, Hiroyasu Mawatari, and Kenji Kishi

Appl. Phys. Lett. 72, 3187 (1998); http://dx.doi.org/10.1063/1.121588 (3 pages) | Cited 1 time

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We propose a method for evaluating the electrical properties of damage on the sidewalls of mesa structures. In the method, current flowing through the mesa sidewalls (Imesa) is obtained from the forward current–voltage characteristics for Schottky barriers formed on both the sidewalls of the mesa structures and (100) surface. In applying the method, to evaluate the damage on the sidewalls of InP mesa structures fabricated by reactive ion etching (RIE) with methane (CH4)/hydrogen (H2), we found that Schottky barrier height ϕ on the mesa sidewalls is increased by RIE. This suggests that an n-type damage layer is induced by RIE on the sidewalls. We also found that the extent of the damage on the mesa sidewalls is lower than that on (100) surface. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
73.30.+y Surface double layers, Schottky barriers, and work functions

Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy

N. Grandjean, J. Massies, M. Leroux, and P. De Mierry

Appl. Phys. Lett. 72, 3190 (1998); http://dx.doi.org/10.1063/1.121589 (3 pages) | Cited 5 times

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InxGa1−xN (0<x<0.2) thin layers were grown on GaN-coated sapphire substrates by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. Their optical properties have been investigated by low- and room-temperature photoluminescence (PL) and photothermal deflection spectroscopy. It is shown that high-quality InxGa1−xN layers with x ∼ 0.1 can be grown by MBE using NH3. The PL linewidths are 48 and 80 meV at 9 and 300 K, respectively. A bowing parameter of 1 eV is deduced for the band-edge luminescence energy. On the other hand, when the growth conditions slightly move aside the optimum, the PL spectra exhibit broad and deep luminescence. The variation of the PL energy of this deep luminescence as a function of the In composition is then discussed. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.55.Nq Composition and phase identification
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

I. P. Smorchkova and N. Samarth

Appl. Phys. Lett. 72, 3193 (1998); http://dx.doi.org/10.1063/1.121590 (3 pages) | Cited 4 times

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We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II–VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth ( ∼ 1.35 eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼ 6×1012 cm−2, and with a low-temperature mobility up to 1.4×104 cm2/V s. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Dz II-VI semiconductors
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Gs II-VI semiconductors

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

R. Raghunathan and B. J. Baliga

Appl. Phys. Lett. 72, 3196 (1998); http://dx.doi.org/10.1063/1.121591 (3 pages) | Cited 9 times

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Electron beam induced current (EBIC) techniques were employed in order to understand the role of defects on the breakdown characteristics of SiC. EBIC images revealed that certain defects caused enhanced multiplication leading to the catastrophic failures in SiC diodes. The impact ionization coefficients for holes measured at the defective site (αp,eff) were found to be higher than those measured at a nondefective site. Also, αp,eff measured at the defective site was found to increase with increasing temperature in contrast with a defect free diode where αp decreases with increasing temperature, clearly indicating that the defects produce the observed negative temperature coefficient of breakdown voltage in SiC. © 1998 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects
85.30.Kk Junction diodes
61.72.-y Defects and impurities in crystals; microstructure

Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

Su-Huai Wei, S. B. Zhang, and Alex Zunger

Appl. Phys. Lett. 72, 3199 (1998); http://dx.doi.org/10.1063/1.121548 (3 pages) | Cited 114 times

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Using a first-principles band structure method we have theoretically studied the effects of Ga additions on the electronic and structural properties of CuInSe2. We find that (i) with increasing xGa, the valence band maximum of CuIn1−xGaxSe2 (CIGS) decreases slightly, while the conduction band minimum (and the band gap) of CIGS increases significantly, (ii) the acceptor formation energies are similar in both CuInSe2 (CIS) and CuGaSe2 (CGS), but the donor formation energy is larger in CGS than in CIS, (iii) the acceptor transition levels are shallower in CGS than in CIS, but the GaCu donor level in CGS is much deeper than the InCu donor level in CIS, and (iv) the stability domain of the chalcopyrite phase increases with respect to ordered defect compounds. Our results are compared with available experimental observations. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
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Stability of ultrasmooth surface morphology of (110) YBa2Cu3O7−δ homoepitaxial films and Nb/Au/(110) YBa2Cu3O7−δ junctions

Toshiyuki Usagawa, Jianguo Wen, Yoshihiro Ishimaru, Satoshi Koyama, Tadashi Utagawa, and Youichi Enomoto

Appl. Phys. Lett. 72, 3202 (1998); http://dx.doi.org/10.1063/1.121549 (3 pages) | Cited 3 times

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We report on ultrasmooth surface morphology and chemical activeness of (110)-oriented YBa2Cu3O7−δ (YBCO) films grown on (110) YBCO single-crystal substrates by scanning electron microscopy, reflection high-energy electron diffraction, and transmission electron microscopy observations. The stable (110) YBCO interface can be formed by in situ deposited thin Au film against the chemically active elements like Nb. The in situ formed Nb/Au/(110)YBCO junction shows clear two superconducting transitions Tc1 = 91.8 K and Tc2 = 8.20 K associated with YBCO and Nb films and large supercurrent (at least larger than 2.0×102 A/cm2) much more than expected phenomenological arguments of s wave and dx2−y2 wave. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
74.10.+v Occurrence, potential candidates
68.55.-a Thin film structure and morphology

Low noise operation of integrated YBa2Cu3O7 magnetometers in static magnetic fields

S. Krey, B. David, R. Eckart, and O. Dössel

Appl. Phys. Lett. 72, 3205 (1998); http://dx.doi.org/10.1063/1.121550 (3 pages) | Cited 4 times

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The noise of two integrated YBa2Cu3O7-SrTiO3-YBa2Cu3O7 multilayer magnetometers in static magnetic fields up to 110 μT is investigated: An inductively coupled magnetometer with integrated flux transformer and a multiloop magnetometer. In both samples, only a moderate increase of the low frequency flux noise is found in high fields, due to the high epitaxial quality of the involved multilayer films. So for moderately shielded or unshielded applications in the earth’s magnetic field, high-quality integrated YBa2Cu3O7 magnetometers can be operated with low excess noise. © 1998 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.50.Hp Electrical noise and shielding equipment
74.78.Fk Multilayers, superlattices, heterostructures
74.72.-h Cuprate superconductors
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Effects of inhomogeneous oxygen content in (La,Gd)0.7Ca0.3MnO3+δ perovskites

J. R. Sun, G. H. Rao, and Y. Z. Zhang

Appl. Phys. Lett. 72, 3208 (1998); http://dx.doi.org/10.1063/1.121551 (3 pages) | Cited 25 times

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Magnetoresistance properties of compounds with the same formula La0.7−xGdxCa0.3MnO3+δ (x = 0, 0.04) but synthesized by the solid-state reaction method from different starting materials are studied. Nearly stoichiometric compounds are obtained when La(OH)3 is used for sample preparation. However, under the same condition, La2O3 causes considerable oxygen deficiency in resulting samples, characterized by a broad metal–semiconductor transition far below the magnetic transition. Inhomogeneous distribution of the oxygen content in compounds (an inhomogeneity beyond the detection of powder x-ray diffraction) can occur when both La2O3 and La(OH)3 coexist in the starting materials, leading to two metal–semiconductor transitions which are obviously developments of those in compounds prepared respectively from La2O3 and La(OH)3, and one magnetic transition corresponding to the upper resistive transition. © 1998 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
72.20.My Galvanomagnetic and other magnetotransport effects
72.60.+g Mixed conductivity and conductivity transitions
75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials

Perpendicular magnetization and dipolar antiferromagnetism in double layer nanostripe arrays of Fe(110) on W(110)

J. Hauschild, U. Gradmann, and H. J. Elmers

Appl. Phys. Lett. 72, 3211 (1998); http://dx.doi.org/10.1063/1.121552 (3 pages) | Cited 47 times

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Fe(110) nanostripe arrays, consisting of alternating monolayer and double layer stripes, have been grown by step flow on vicinal W(110) substrates. The magnetic easy axis switches from in-plane in the monolayer to perpendicular in the double layer stripes. The data strongly suggest that magnetostatic interactions induce antiferromagnetic order in the double layer nanostripe array. It can be switched into a ferromagnetic arrangement by low external fields. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.30.Ds Spin waves
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
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Boltzmann machine neuron device using quantum-coupled single electrons

Nan-Jian Wu, Naoto Shibata, and Yoshihito Amemiya

Appl. Phys. Lett. 72, 3214 (1998); http://dx.doi.org/10.1063/1.121553 (3 pages) | Cited 5 times

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A quantum Boltzmann machine (QBM) neuron device is proposed. It consists of a two-dimensional (2D) arrangement of quantum dots that is occupied by quantum-coupled single electrons. The two possible polarizations, “down” and “up,” of the electron spin are used to encode the binary states 0 and 1. The QBM neuron device produces stochastic operations naturally because the electron spin takes the polarization down or up with a certain probability. Calculations for the operation of the QBM neuron device are presented and it is demonstrated that the device can perform the stochastic operations of the BM neuron. © 1998 American Institute of Physics.
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85.35.Ds Quantum interference devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation

Markus Kohli, Paul Muralt, and Nava Setter

Appl. Phys. Lett. 72, 3217 (1998); http://dx.doi.org/10.1063/1.121554 (3 pages) | Cited 45 times

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X-ray diffraction showed that the volume fraction of 90° domains in tetragonal Pb(Zr,Ti)O3 thin films could be substantially reduced by either hot dc poling or by a bipolar pulsed-field process. In both cases, the (001) Bragg peak increased and the (100) peak decreased. However, ferroelectric hysteresis loops look quite different. Hot dc poling leads to large internal fields and high frozen-in polarisation, whereas pulse treatment removes the voltage shifts. This relaxation of the loop and x-ray diffraction results indicate a liberation of defect-pinned domain walls by removing, reorienting, or randomizing charged defects or defect dipoles. Alignment of defects during hot dc poling contributes to piezoelectric and pyroelectric activities. © 1998 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
77.70.+a Pyroelectric and electrocaloric effects

High sensitivity spin-valve strain sensor

H. J. Mamin, B. A. Gurney, D. R. Wilhoit, and V. S. Speriosu

Appl. Phys. Lett. 72, 3220 (1998); http://dx.doi.org/10.1063/1.121555 (3 pages) | Cited 14 times

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A technique for detecting strain has been demonstrated based on a spin-valve sensor. The 400 Å thick sensor has been integrated onto an atomic force microscope cantilever. An applied strain caused by bending of the cantilever changes the orientation of the free-layer magnetization due to magnetostriction. This in turn results in a change in the electrical resistance because of the giant magnetoresistance effect. With the proper magnetic bias, a base-line strain sensitivity of 10−10/Hz1/2 has been achieved. The corresponding gauge factor of 150 is roughly 1.6× that of similar silicon piezoresistive cantilevers. In the future, one might be able to enhance the sensitivity by another factor of 3–5. © 1998 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
46.80.+j Measurement methods and techniques in continuum mechanics of solids
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance

Atomic force measurement of low-frequency dielectric noise

L. E. Walther, E. Vidal Russell, N. E. Israeloff, and H. Alvarez Gomariz

Appl. Phys. Lett. 72, 3223 (1998); http://dx.doi.org/10.1063/1.121556 (3 pages) | Cited 7 times

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Using noncontact scanning probe microscopy techniques, dielectric properties were studied on 50-nm-length scales in poly-vinyl-acetate (PVAc) and poly-methyl-methacrylate films. Low-frequency (1/f ) fluctuations observed in the measurements, peaked in intensity near the glass transition temperature in PVAc. The noise is shown to arise from thermal dielectric polarization fluctuations. Analysis of this noise provides a noninvasive method of probing equilibrium nanometer-scale dynamical processes in dielectric materials and devices. © 1998 American Institute of Physics.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
07.50.Hp Electrical noise and shielding equipment
72.70.+m Noise processes and phenomena
07.79.-v Scanning probe microscopes and components
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Theoretical analysis of the resistively coupled single-electron transistor

Alexander N. Korotkov

Appl. Phys. Lett. 72, 3226 (1998); http://dx.doi.org/10.1063/1.121557 (3 pages) | Cited 8 times

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The operation of the resistively coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures T as small as 10−3e2/C (where C is the junction capacitance) while the voltage gain becomes impossible at T≳10−2e2/C. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices
85.30.De Semiconductor-device characterization, design, and modeling
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