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15 Jun 1998

Volume 72, Issue 24, pp. 3097-3228

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Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing

S. Janz, M. Buchanan, P. van der Meer, Z. R. Wasilewski, D.-X. Xu, P. Piva, I. V. Mitchell, U. G. Akano, and A. Fiore

Appl. Phys. Lett. 72, 3097 (1998); http://dx.doi.org/10.1063/1.121558 (3 pages) | Cited 4 times

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The change in the second-order nonlinear susceptibility of an asymmetric quantum well (AQW) superlattice induced by ion beam-enhanced intermixing has been measured. The surface-emitted second-harmonic intensities radiated from implanted and masked areas of an AQW waveguide were measured and compared for incident wavelengths between λ = 1480 and 1600 nm. Intermixing resulted in a 60 meV blueshift of the AQW band edge and a uniform suppression of the AQW second-order susceptibility, while the masked AQWs were unchanged. © 1998 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.-w Optical properties of specific thin films
61.72.up Other materials
61.80.Jh Ion radiation effects
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers

A photoconductive, miniature terahertz source

Richard K. Lai, Jiunn-Ren Hwang, Theodore B. Norris, and John F. Whitaker

Appl. Phys. Lett. 72, 3100 (1998); http://dx.doi.org/10.1063/1.121559 (3 pages) | Cited 5 times

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We discuss the performance of a micromachined, photoconductive terahertz emitter that is fabricated on low-temperature-grown GaAs. The device is mounted on a pair of single-mode optical fibers that allows the source to be freely positionable. A strong radiation burst is emitted due to the large magnetic moment created by the electrode. The emitter’s small feature size of 300 μm by 300 μm with a photoconductive switch area of 30 μm by 30 μm suggests its application for terahertz, time-domain, near-field spectroscopy and imaging. © 1998 American Institute of Physics.
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42.72.Ai Infrared sources
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.79.Pw Imaging detectors and sensors

Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

Seoung-Hwan Park and Shun-Lien Chuang

Appl. Phys. Lett. 72, 3103 (1998); http://dx.doi.org/10.1063/1.121560 (3 pages) | Cited 79 times

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The piezoelectric effects on the optical gain of wurtzite GaN/AlGaN QW lasers taking into account the many-body effects are presented. The self-consistent model with piezoelectric field effect shows that band structures and optical gain are significantly affected by the piezoelectric field at relatively low carrier densities. The peak gain is redshifted and smaller when compared to the flat-band model without piezoelectric field effect. Only gain peaks corresponding to C1-HH1 and C1-LH1 transitions are observed in the investigated range and transitions for C1-HH2 and C1-LH2 are negligible due to the large subband energy spacing at low carrier densities and small matrix elements at high carrier densities. At high carrier densities, the self-consistent model shows band structures and optical properties similar to the flat-band model due to the screening effects. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
71.20.Nr Semiconductor compounds
42.60.By Design of specific laser systems
77.65.-j Piezoelectricity and electromechanical effects
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.20.At Surface states, band structure, electron density of states
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength

Manabu Mitsuhara, Matsuyuki Ogasawara, Mamoru Oishi, and Hideo Sugiura

Appl. Phys. Lett. 72, 3106 (1998); http://dx.doi.org/10.1063/1.121561 (3 pages) | Cited 11 times

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We report the growth of a four-period multiple quantum well (MQW) structure with 115-Å-thick, +1.65% strained wells by metalorganic molecular beam epitaxy and its application to 2 μm wavelength lasers. Transmission electron microscopy and photoluminescence measurements reveal that the structural and optical properties of MQW are sensitive to the barrier strain: the values of barrier strain required for MQW with both flat barrier-well interfaces and strong photoluminescence fall within a small range from −0.17% to +0.14%. The double-crystal x-ray diffraction pattern of the MQW remains unchanged before and after annealing at 620 °C for 2.5 h. Buried heterostructure lasers fabricated using metalorganic vapor phase epitaxy regrowth have an emission wavelength of 2.07 μm under a continuous operation current of 120 mA at 55 °C. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors

Dynamics of infrared absorption caused by hydroxyl groups and its effect on refractive index evolution in ultraviolet exposed hydrogen loaded GeO2-doped fibers

F. M. Araújo, E. Joanni, M. B. Marques, and O. G. Okhotnikov

Appl. Phys. Lett. 72, 3109 (1998); http://dx.doi.org/10.1063/1.121562 (3 pages) | Cited 6 times

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The growth dynamics of UV induced IR absorption and related refractive index change in hydrogen loaded GeO2-doped fibers have been studied. We report a higher initial rate and strong saturation for Ge–OH generation compared with Si–OH formation under UV exposure. A close correlation was found between the Ge/Si–OH groups concentration and the induced index change as a function of the UV exposure time. © 1998 American Institute of Physics.
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42.81.Cn Fiber testing and measurement of fiber parameters
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Spectrally-resolved near-field investigation of proton implanted vertical cavity surface emitting lasers

Jeongyong Kim, David E. Pride, Joseph T. Boyd, and Howard E. Jackson

Appl. Phys. Lett. 72, 3112 (1998); http://dx.doi.org/10.1063/1.121563 (3 pages) | Cited 9 times

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Emission characteristics of proton implanted vertical cavity surface emitting lasers have been studied by spectrally-resolved near-field scanning optical microscopy (NSOM). Measured spatial intensity distributions of individual transverse modes show a fundamental mode at threshold, and two double-lobed first-order modes excited around aperture edge above 1.3× threshold injection current. The use of high spectral and spatial resolution NSOM enabled the detection of a local resonance wavelength dependence on position across the laser aperture; from these data, a lateral refractive index variation is calculated. As the injection current is increased, these index distributions are found to be consistent with the observed reduction of the spatial width of the intensity distribution and the increase in the spectral mode spacing. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
07.79.Fc Near-field scanning optical microscopes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.uj III-V and II-VI semiconductors

High definition aperture probes for near-field optical microscopy fabricated by focused ion beam milling

J. A. Veerman, A. M. Otter, L. Kuipers, and N. F. van Hulst

Appl. Phys. Lett. 72, 3115 (1998); http://dx.doi.org/10.1063/1.121564 (3 pages) | Cited 86 times

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We have improved the optical characteristics of aluminum-coated fiber probes used in near-field scanning optical microscopy by milling with a focused ion beam. This treatment produces a flat-end face free of aluminum grains, containing a well-defined circularly-symmetric aperture with controllable diameter down to 20 nm. The polarization behavior of the tips is circularly symmetric with a polarization ratio exceeding 1:100. The improved imaging characteristics are demonstrated by measuring single molecule fluorescence. Count rates increase more than one order of magnitude over unmodified probes, and the molecule images map a spatial electric field distribution of the aperture in agreement with calculations. © 1998 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
81.65.Cf Surface cleaning, etching, patterning
78.55.-m Photoluminescence, properties and materials

Reduction of effects of Fabry–Perot fringing in wavelength modulation experiments

A. N. Dharamsi, P. C. Shea, and A. M. Bullock

Appl. Phys. Lett. 72, 3118 (1998); http://dx.doi.org/10.1063/1.121565 (3 pages) | Cited 1 time

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One of the factors limiting the sensitivity of wavelength modulation experiments is the fringing that is created by inadvertent multiple reflections between parallel optical surfaces in the apparatus. It is shown that the effects of this “étaloning” can be countered by using detection harmonic orders greater than the second. A theoretical basis for the effect is presented and compared with experimental results obtained. © 1998 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
07.60.Ly Interferometers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Optically induced domain waveguides in SrxBa1−xNb2O6 crystals

Alexander Bekker, Aviad Peda’el, Naum K. Berger, Moshe Horowitz, and Baruch Fischer

Appl. Phys. Lett. 72, 3121 (1998); http://dx.doi.org/10.1063/1.121566 (3 pages) | Cited 9 times

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Optically induced refractive index patterns, which can be used for waveguides, were formed in SrxBa1−xNb2O6 crystals using an erasable fixing mechanism, based on domains formation by the screening effect. The sign and strength of the refractive index change of the fixed waveguides was controllable by an applied electric field. Fixed patterns are shown to allow the storage of many spatially multiplexed holograms. © 1998 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Gi Light-sensitive materials
42.70.Ln Holographic recording materials; optical storage media
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode

Natsuhiko Mizutani, Sei-ichi Miyazawa, Masahiro Nakanishi, Masao Majima, Jun Nitta, Yoshinobu Sekiguchi, Hidetoshi Nojiri, and Yuichi Handa

Appl. Phys. Lett. 72, 3124 (1998); http://dx.doi.org/10.1063/1.121567 (3 pages) | Cited 1 time

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An inhomogeneously biased distributed feedback (DFB) laser diode (LD) with two electrodes switched its polarization mode by 3 mA change of the bias current, maintaining single longitudinal mode oscillation. In the active layer of the LD, 13 nm thick and 0.6% tensile-strained InGaAs multiple quantum well (MQW) equalized the transverse electric and the transverse magnetic modal optical gain at 1.55 μm. With various grating pitches on the same MQW active layer, polarization switching DFB LDs were realized in the wavelength range as wide as 18 nm. The linewidth characteristics during the polarization switching were confirmed to be narrow due to the small switching current. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Green photoluminescence from Er-containing amorphous SiN thin films

A. R. Zanatta and L. A. O. Nunes

Appl. Phys. Lett. 72, 3127 (1998); http://dx.doi.org/10.1063/1.121568 (3 pages) | Cited 30 times

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Green light emission at room temperature was achieved from nonhydrogenated amorphous silicon–nitrogen (a-SiN) thin films. The films were deposited by cosputtering a silicon target covered with metallic erbium platelets in an Ar+N2 atmosphere. According to the deposition conditions, the nitrogen concentration [N] reached ∼ 40 at. % rendering an optical gap of approximately 3.5 eV while the Er concentration [Er] was estimated to be ∼ 10 at. % in the present films. The high [Er] associated to the optical band gap allows the direct excitation of Er3+ ions. This optical excitation is more efficient at low temperatures as a consequence of the reduction in nonradiative processes, and when exciting the samples with the 488.0 nm line of an Ar+ laser which is in resonance with the 4F7/2Er3+ energy level. In addition to light emission at ∼ 520 and ∼ 545 nm, transitions in the infrared energy region could be easily verified in as-deposited samples. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.43.Er Other amorphous solids
81.15.Cd Deposition by sputtering

High-power λ ≈ 8 μm quantum cascade lasers with near optimum performance

Claire Gmachl, Alessandro Tredicucci, Federico Capasso, Albert L. Hutchinson, Deborah L. Sivco, James N. Baillargeon, and Alfred Y. Cho

Appl. Phys. Lett. 72, 3130 (1998); http://dx.doi.org/10.1063/1.121569 (3 pages) | Cited 59 times

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Quantum cascade (QC) lasers emitting at λ ≈ 8 μm with a power performance equal to short-wavelength (λ ≈ 5 μm) QC lasers are reported. The device improvement is mainly achieved by a design of the injector/relaxation region, which at laser threshold allows resonant carrier injection between the ground state of the preceding and the upper laser level of the subsequent active region. In pulsed operation a peak output power of 1.3 W per facet has been measured at 100 K. At room temperature a record peak power of 325 mW and a record slope efficiency of 180 mW/A have been measured. In continuous-wave operation the maximum power at 30 K was 510 mW per facet and still 200 mW per facet at 80 K. The high values of the output power and slope efficiency demonstrate the validity of the cascading scheme, in which electrons above threshold generate one photon per each active region they successively traverse. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Focused ion-beam fabrication of fiber probes with well-defined apertures for use in near-field scanning optical microscopy

Saeed Pilevar, Klaus Edinger, Walid Atia, Igor Smolyaninov, and Christopher Davis

Appl. Phys. Lett. 72, 3133 (1998); http://dx.doi.org/10.1063/1.121570 (3 pages) | Cited 23 times

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We present a focused ion-beam (FIB) fabrication method for very clean and well-defined subwavelength fiber probes with metallic apertures of a desired diameter for use in near-field scanning optical microscopy. Such probes exhibit improved features compared to probes coated with metal by the conventional angled evaporation technique. Examples of FIB fabricated fiber probes are shown and images of a test sample are presented using one of the probes in a near-field microscope. © 1998 American Institute of Physics.
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42.81.Bm Fabrication, cladding, and splicing
07.79.Fc Near-field scanning optical microscopes
07.60.Vg Fiber-optic instruments

Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP

L. Zeng, B. X. Yang, A. Cavus, W. Lin, Y. Y. Luo, M. C. Tamargo, Y. Guo, and Y. C. Chen

Appl. Phys. Lett. 72, 3136 (1998); http://dx.doi.org/10.1063/1.121571 (3 pages) | Cited 20 times

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Room-temperature optical pumped lasing emission in the red, green, and blue has been obtained from ZnCdMgSe/ZnCdSe quantum well (QW) laser structures grown on InP substrates. The structures are nearly identical, except for variations in the thickness and/or composition of the QW layer. No other single set of semiconductor materials has been demonstrated whose structures are pseudomorphic on one single substrate, and produces light emitters throughout the entire visible range. Our results demonstrate the potential for these materials as integrated full color display devices. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.35.Ct Interface structure and roughness

Polymer-based highly multimode electro-optic waveguide modulator

De-Gui Sun and Ray T. Chen

Appl. Phys. Lett. 72, 3139 (1998); http://dx.doi.org/10.1063/1.121572 (3 pages) | Cited 4 times

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A unidirectional electro-optic modulator based on an asymmetrical highly multimode waveguide coupler is proposed. To achieve high switching performance in a guided-wave coupler, a grating-based dumping wall is placed on the larger waveguide. This dumping effect makes the asymmetric highly multimode waveguide coupler possess a highly efficient unidirectional coupling process. A high modulation depth of 99% is experimentally achieved at 633 nm wavelength with an index modulation of 3.0×10−4. This device can be used for multimode optical interconnection systems such as data communications and fiber sensor networks. © 1998 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.82.Ds Interconnects, including holographic interconnects
42.70.Jk Polymers and organics
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