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15 Jun 1998

Volume 72, Issue 24, pp. 3097-3228

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Boltzmann machine neuron device using quantum-coupled single electrons

Nan-Jian Wu, Naoto Shibata, and Yoshihito Amemiya

Appl. Phys. Lett. 72, 3214 (1998); http://dx.doi.org/10.1063/1.121553 (3 pages) | Cited 5 times

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A quantum Boltzmann machine (QBM) neuron device is proposed. It consists of a two-dimensional (2D) arrangement of quantum dots that is occupied by quantum-coupled single electrons. The two possible polarizations, “down” and “up,” of the electron spin are used to encode the binary states 0 and 1. The QBM neuron device produces stochastic operations naturally because the electron spin takes the polarization down or up with a certain probability. Calculations for the operation of the QBM neuron device are presented and it is demonstrated that the device can perform the stochastic operations of the BM neuron. © 1998 American Institute of Physics.
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85.35.Ds Quantum interference devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation

Markus Kohli, Paul Muralt, and Nava Setter

Appl. Phys. Lett. 72, 3217 (1998); http://dx.doi.org/10.1063/1.121554 (3 pages) | Cited 45 times

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X-ray diffraction showed that the volume fraction of 90° domains in tetragonal Pb(Zr,Ti)O3 thin films could be substantially reduced by either hot dc poling or by a bipolar pulsed-field process. In both cases, the (001) Bragg peak increased and the (100) peak decreased. However, ferroelectric hysteresis loops look quite different. Hot dc poling leads to large internal fields and high frozen-in polarisation, whereas pulse treatment removes the voltage shifts. This relaxation of the loop and x-ray diffraction results indicate a liberation of defect-pinned domain walls by removing, reorienting, or randomizing charged defects or defect dipoles. Alignment of defects during hot dc poling contributes to piezoelectric and pyroelectric activities. © 1998 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
77.70.+a Pyroelectric and electrocaloric effects

High sensitivity spin-valve strain sensor

H. J. Mamin, B. A. Gurney, D. R. Wilhoit, and V. S. Speriosu

Appl. Phys. Lett. 72, 3220 (1998); http://dx.doi.org/10.1063/1.121555 (3 pages) | Cited 14 times

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A technique for detecting strain has been demonstrated based on a spin-valve sensor. The 400 Å thick sensor has been integrated onto an atomic force microscope cantilever. An applied strain caused by bending of the cantilever changes the orientation of the free-layer magnetization due to magnetostriction. This in turn results in a change in the electrical resistance because of the giant magnetoresistance effect. With the proper magnetic bias, a base-line strain sensitivity of 10−10/Hz1/2 has been achieved. The corresponding gauge factor of 150 is roughly 1.6× that of similar silicon piezoresistive cantilevers. In the future, one might be able to enhance the sensitivity by another factor of 3–5. © 1998 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
46.80.+j Measurement methods and techniques in continuum mechanics of solids
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance

Atomic force measurement of low-frequency dielectric noise

L. E. Walther, E. Vidal Russell, N. E. Israeloff, and H. Alvarez Gomariz

Appl. Phys. Lett. 72, 3223 (1998); http://dx.doi.org/10.1063/1.121556 (3 pages) | Cited 7 times

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Using noncontact scanning probe microscopy techniques, dielectric properties were studied on 50-nm-length scales in poly-vinyl-acetate (PVAc) and poly-methyl-methacrylate films. Low-frequency (1/f ) fluctuations observed in the measurements, peaked in intensity near the glass transition temperature in PVAc. The noise is shown to arise from thermal dielectric polarization fluctuations. Analysis of this noise provides a noninvasive method of probing equilibrium nanometer-scale dynamical processes in dielectric materials and devices. © 1998 American Institute of Physics.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
07.50.Hp Electrical noise and shielding equipment
72.70.+m Noise processes and phenomena
07.79.-v Scanning probe microscopes and components
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Theoretical analysis of the resistively coupled single-electron transistor

Alexander N. Korotkov

Appl. Phys. Lett. 72, 3226 (1998); http://dx.doi.org/10.1063/1.121557 (3 pages) | Cited 8 times

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The operation of the resistively coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures T as small as 10−3e2/C (where C is the junction capacitance) while the voltage gain becomes impossible at T≳10−2e2/C. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices
85.30.De Semiconductor-device characterization, design, and modeling
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