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15 Jun 1998

Volume 72, Issue 24, pp. 3097-3228

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Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation

H. Rinnert, M. Vergnat, G. Marchal, and A. Burneau

Appl. Phys. Lett. 72, 3157 (1998); http://dx.doi.org/10.1063/1.121578 (3 pages) | Cited 53 times

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Visible photoluminescence (PL) can be observed in a-SiOx and a-SiOx:H alloys prepared by evaporation of SiO in ultrahigh vacuum and under a flow of hydrogen ions, respectively. The hydrogen and oxygen bonding is studied by infrared spectrometry. The hydrogen stability is followed by thermal desorption spectrometry experiments. The evolution of the PL with annealing treatments shows that the PL can be attributed to a quantum confinement effect in a-Si clusters embedded in the matrix of a-SiOx. Hydrogen does not greatly contribute to the PL efficiency and to the thermal evolution of the a-Si clusters. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
42.79.Wc Optical coatings

Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

C. S. Peng, Z. Y. Zhao, H. Chen, J. H. Li, Y. K. Li, L. W. Guo, D. Y. Dai, Q. Huang, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung

Appl. Phys. Lett. 72, 3160 (1998); http://dx.doi.org/10.1063/1.121579 (3 pages) | Cited 31 times

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Relaxed GexSi1−x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1−y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5×106 cm−2 in the top layers, while the total thickness of the structure is no more than 1.7 μm. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Hd Other semiconductors

Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process

M. Passlack, R. Droopad, Z. Yu, C. Overgaard, B. Bowers, and J. Abrokwah

Appl. Phys. Lett. 72, 3163 (1998); http://dx.doi.org/10.1063/1.121580 (3 pages) | Cited 2 times

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GaAs homointerfaces have been grown by molecular beam epitaxy using the steps of GaAs growth, As cap deposition, wafer storage, thermal desorption of the As cap, and GaAs overgrowth. As cap layers with a thickness of up to 7.8 μm were deposited and the wafers were stored for 3–7 days in ultrahigh vacuum (UHV) or under atmospheric conditions. Nonradiative recombination originating from the GaAs homointerface of wafers stored in UHV could not be detected (interface recombination velocity S≪1000 cm/s), however, significant nonradiative recombination (S = 104–105 cm/s) was found for all GaAs homointerfaces where wafer storage occurred under atmospheric conditions. This result demonstrates that the As cap deposition/removal process is inadequate for GaAs surface protection in a fabrication facility. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Ea III-V semiconductors
81.65.-b Surface treatments
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Minority carrier diffusion length and lifetime in GaN

Z. Z. Bandić, P. M. Bridger, E. C. Piquette, and T. C. McGill

Appl. Phys. Lett. 72, 3166 (1998); http://dx.doi.org/10.1063/1.121581 (3 pages) | Cited 45 times

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Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion length of 0.28 μm has been measured, indicating minority carrier lifetime of 6.5 ns. The tapping mode atomic force microscopy imaging of the surfaces and scanning electron microscopy of the cross sections have been used to characterize the linear dislocations and columnar structure of the GaN. The possible influence of recombination on the extended defects in GaN on the minority carrier diffusion length and lifetime is discussed, and contrasted to other recombination mechanisms. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Fabrication of multiperiod Si/SiO2/Ge layered structure through chemical bond manipulation

K. Prabhakaran, T. Matsumoto, T. Ogino, and Y. Masumoto

Appl. Phys. Lett. 72, 3169 (1998); http://dx.doi.org/10.1063/1.121582 (3 pages) | Cited 2 times

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In this letter, we report a method called chemical bond manipulation for fabrication of multiperiod nanometer sized Si/SiO2/Ge layered structure. Chemical bond manipulation is a self-organization process which involves selective breaking and making of surface chemical bonds and thereby enable formation of the desired species on a full wafer scale. We show that oxygen of germanium oxide layer formed on Si(111) are picked up by the Si atoms arriving at the surface during subsequent growth. This phenomenon involves breaking of Ge–O bonds and making of Si–O bonds and leads to the formation of ultrathin Si and Ge layers sandwiched between ultrathin silicon oxide layers, preserving the original wafer morphology. This material exhibits blue-green light emission at room temperature when excited by ultraviolet laser. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Ty Semiconductor-insulator-semiconductor structures
78.66.Db Elemental semiconductors and insulators
78.55.-m Photoluminescence, properties and materials
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electronic states tuning of InAs self-assembled quantum dots

J. M. García, T. Mankad, P. O. Holtz, P. J. Wellman, and P. M. Petroff

Appl. Phys. Lett. 72, 3172 (1998); http://dx.doi.org/10.1063/1.121583 (3 pages) | Cited 87 times

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We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. © 1998 American Institute of Physics.  
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti

Appl. Phys. Lett. 72, 3175 (1998); http://dx.doi.org/10.1063/1.121584 (3 pages) | Cited 64 times

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In this letter we report on a metal–semiconductor–metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 μm, with a maximum responsivity of 0.24 A/W at 1.3 μm under a 1 V bias. A response time of about 2 ns has been measured. © 1998 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors

Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

M. Mamor, F. D. Auret, S. A. Goodman, W. E. Meyer, and G. Myburg

Appl. Phys. Lett. 72, 3178 (1998); http://dx.doi.org/10.1063/1.121585 (3 pages) | Cited 4 times

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Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique. © 1998 American Institute of Physics.
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61.80.Jh Ion radiation effects
71.55.Cn Elemental semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
73.61.Cw Elemental semiconductors

Materials integration of gallium arsenide and silicon by wafer bonding

P. Kopperschmidt, S. Senz, G. Kästner, D. Hesse, and U. M. Gösele

Appl. Phys. Lett. 72, 3181 (1998); http://dx.doi.org/10.1063/1.121586 (3 pages) | Cited 12 times

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We present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in diameter were hydrophobically bonded to commercially available 3 in. silicon-on-sapphire wafers at room temperature. After successive annealings in hydrogen and arsenic atmospheres at temperatures up to 850 °C the Si/GaAs interfacial energy was increased by the formation of strong covalent bonds. Due to the difference in the lattice constants of about 4.1%, extra Si lattice planes were observed at the interface. No threading dislocations were introduced into the GaAs. © 1998 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
68.35.Ct Interface structure and roughness
81.05.Cy Elemental semiconductors
81.05.Ea III-V semiconductors
61.66.Bi Elemental solids
61.66.Fn Inorganic compounds
61.50.Lt Crystal binding; cohesive energy
68.35.Md Surface thermodynamics, surface energies
61.72.Cc Kinetics of defect formation and annealing

Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

R. C. Tu, Y. K. Su, H. J. Chen, Y. S. Huang, and S. T. Chou

Appl. Phys. Lett. 72, 3184 (1998); http://dx.doi.org/10.1063/1.121587 (3 pages) | Cited 2 times

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The temperature-dependent optical properties of ZnTe epilayers grown on GaAs substrates by molecular beam epitaxy with and without ZnSe/ZnTe strained-layer superlattice (SLS) buffer layers have been studied using contactless electroreflectance (CER) and piezoreflectance (PzR). Our ZnTe epilayers of 1.5 μm in thickness grown on GaAs substrates are under a biaxial tensile strain according to the results shown in CER and PzR spectra. Furthermore, the strain induced energy splitting between heavy- and light-hole valence bands in the ZnTe epilayer can be reduced by using the ZnSe/ZnTe SLS buffer layers. We have also justified the temperature-dependent energy splitting between heavy- and light-hole valence bands for ZnTe through theoretical calculations. Discrepancy between experiments and calculations indicates that the residual mismatch-induced strain as well as the thermally induced strain during cooling must be taken into account at the same time. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Electrical evaluation of damage on the sidewalls of InP mesa structures fabricated by reactive ion etching with methane and hydrogen

Norio Yamamoto, Hiroyasu Mawatari, and Kenji Kishi

Appl. Phys. Lett. 72, 3187 (1998); http://dx.doi.org/10.1063/1.121588 (3 pages) | Cited 1 time

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We propose a method for evaluating the electrical properties of damage on the sidewalls of mesa structures. In the method, current flowing through the mesa sidewalls (Imesa) is obtained from the forward current–voltage characteristics for Schottky barriers formed on both the sidewalls of the mesa structures and (100) surface. In applying the method, to evaluate the damage on the sidewalls of InP mesa structures fabricated by reactive ion etching (RIE) with methane (CH4)/hydrogen (H2), we found that Schottky barrier height ϕ on the mesa sidewalls is increased by RIE. This suggests that an n-type damage layer is induced by RIE on the sidewalls. We also found that the extent of the damage on the mesa sidewalls is lower than that on (100) surface. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
73.30.+y Surface double layers, Schottky barriers, and work functions

Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy

N. Grandjean, J. Massies, M. Leroux, and P. De Mierry

Appl. Phys. Lett. 72, 3190 (1998); http://dx.doi.org/10.1063/1.121589 (3 pages) | Cited 5 times

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InxGa1−xN (0<x<0.2) thin layers were grown on GaN-coated sapphire substrates by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. Their optical properties have been investigated by low- and room-temperature photoluminescence (PL) and photothermal deflection spectroscopy. It is shown that high-quality InxGa1−xN layers with x ∼ 0.1 can be grown by MBE using NH3. The PL linewidths are 48 and 80 meV at 9 and 300 K, respectively. A bowing parameter of 1 eV is deduced for the band-edge luminescence energy. On the other hand, when the growth conditions slightly move aside the optimum, the PL spectra exhibit broad and deep luminescence. The variation of the PL energy of this deep luminescence as a function of the In composition is then discussed. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.55.Nq Composition and phase identification
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

I. P. Smorchkova and N. Samarth

Appl. Phys. Lett. 72, 3193 (1998); http://dx.doi.org/10.1063/1.121590 (3 pages) | Cited 4 times

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We demonstrate the formation of a two-dimensional electron gas in lattice-matched, modulation-doped ZnTe/CdSe quantum well structures. Despite the well-known difficulty in n doping the II–VI semiconductor ZnTe, we find that the unusual type-II band alignment between ZnTe and CdSe allows the efficient transfer of free carriers from n-ZnTe into a CdSe quantum well since the deep donor levels in the n-ZnTe barrier lie above the confined ground state in the CdSe well. The sizeable well depth ( ∼ 1.35 eV) enables the fabrication of two-dimensional electron gases with sheet concentrations up to ∼ 6×1012 cm−2, and with a low-temperature mobility up to 1.4×104 cm2/V s. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Dz II-VI semiconductors
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Gs II-VI semiconductors

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

R. Raghunathan and B. J. Baliga

Appl. Phys. Lett. 72, 3196 (1998); http://dx.doi.org/10.1063/1.121591 (3 pages) | Cited 9 times

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Electron beam induced current (EBIC) techniques were employed in order to understand the role of defects on the breakdown characteristics of SiC. EBIC images revealed that certain defects caused enhanced multiplication leading to the catastrophic failures in SiC diodes. The impact ionization coefficients for holes measured at the defective site (αp,eff) were found to be higher than those measured at a nondefective site. Also, αp,eff measured at the defective site was found to increase with increasing temperature in contrast with a defect free diode where αp decreases with increasing temperature, clearly indicating that the defects produce the observed negative temperature coefficient of breakdown voltage in SiC. © 1998 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects
85.30.Kk Junction diodes
61.72.-y Defects and impurities in crystals; microstructure

Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

Su-Huai Wei, S. B. Zhang, and Alex Zunger

Appl. Phys. Lett. 72, 3199 (1998); http://dx.doi.org/10.1063/1.121548 (3 pages) | Cited 114 times

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Using a first-principles band structure method we have theoretically studied the effects of Ga additions on the electronic and structural properties of CuInSe2. We find that (i) with increasing xGa, the valence band maximum of CuIn1−xGaxSe2 (CIGS) decreases slightly, while the conduction band minimum (and the band gap) of CIGS increases significantly, (ii) the acceptor formation energies are similar in both CuInSe2 (CIS) and CuGaSe2 (CGS), but the donor formation energy is larger in CGS than in CIS, (iii) the acceptor transition levels are shallower in CGS than in CIS, but the GaCu donor level in CGS is much deeper than the InCu donor level in CIS, and (iv) the stability domain of the chalcopyrite phase increases with respect to ordered defect compounds. Our results are compared with available experimental observations. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
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