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22 Jun 1998

Volume 72, Issue 25, pp. 3243-3383

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Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters

H. Akinaga, J. De Boeck, G. Borghs, S. Miyanishi, A. Asamitsu, W. Van Roy, Y. Tomioka, and L. H. Kuo

Appl. Phys. Lett. 72, 3368 (1998); http://dx.doi.org/10.1063/1.121606 (3 pages) | Cited 53 times

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We show a negative magnetoresistance (MR) in GaAs with magnetic MnAs nanoclusters (about 1.5% at 30 K in 1 T). The clusters were formed in a two step process consisting of the molecular beam epitaxy of (Ga,Mn)As layer and the subsequent annealing. The origin of the negative MR is attributed to the presence of the MnAs clusters. The mechanism is considered to be a spin-dependent scattering of carriers by MnAs clusters which decreases when the direction of the magnetization between the clusters aligns with the magnetic field. © 1998 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.63.-b Electronic transport in nanoscale materials and structures
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Concurrent variation of giant magnetoresistance and saturation Kerr rotation in NiCo/Cu multilayers

J. Du, L. N. Tong, M. Lu, K. Xia, M. H. Pan, J. Wu, D. Feng, H. R. Zhai, L. Y. Chen, X. F. Jin, and H. Xia

Appl. Phys. Lett. 72, 3371 (1998); http://dx.doi.org/10.1063/1.121607 (3 pages) | Cited 1 time

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The dependences of magneto-optical effect, effective optical constants, and giant magnetoresistance (GMR) on the thickness of Cu layers were investigated in NiCo/Cu multilayers prepared by rf magnetron sputtering. A peak of saturation polar Kerr rotation θK, occurred simultaneously with that of GMR ratio when the Cu thickness is around 1.0 nm, where a clear drop of the effective optical constants n and k appeared. The peak of θK is mainly caused by the reduction of the effective optical constants, which dominate over the small drop of the effective off-diagonal elements of the dielectric tensor. The concurrent variation of GMR and θK is related to antiferromagnetic interlayer coupling, which may change the electron band structure and thus the optical and magneto-optical transitions of electrons. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.20.Ls Magneto-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.De Giant magnetoresistance
73.61.At Metal and metallic alloys
75.50.Ee Antiferromagnetics
78.66.Bz Metals and metallic alloys
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