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22 Jun 1998

Volume 72, Issue 25, pp. 3243-3383

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Visible blind GaN p-i-n photodiodes

D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi

Appl. Phys. Lett. 72, 3303 (1998); http://dx.doi.org/10.1063/1.121631 (3 pages) | Cited 45 times

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We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 1011 Ω. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Dominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study

M. Nesládek, L. M. Stals, A. Stesmans, K. Iakoubovskij, G. J Adriaenssens, J. Rosa, and M. Vaněček

Appl. Phys. Lett. 72, 3306 (1998); http://dx.doi.org/10.1063/1.121632 (3 pages) | Cited 32 times

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Characteristic features in photocurrent (PC) and electron paramagnetic resonance (EPR) spectra are discussed and attributed to main defects in the gap of optical-quality chemical vapor deposited diamond. A shoulder in the PC spectra with an onset at about 2.2 eV is attributed to the single-substitutional nitrogen defect (EPR P1 resonance at g = 2.0024). A second feature in the PC spectra with an onset of about 1.3 eV is observed on “as-grown” samples with a hydrogen terminated surface. The defect level associated with this feature is hydrogen related, and this defect disappears after oxidation of the diamond sample surface. The EPR g = 2.0028, which was also suggested to be H-related, is discussed. © 1998 American Institute of Physics.
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71.55.Ht Other nonmetals
73.61.Ng Insulators
76.30.-v Electron paramagnetic resonance and relaxation
73.50.Pz Photoconduction and photovoltaic effects

Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure

Yang Ji, Yuanzhen Chen, Kejian Luo, Houzhi Zheng, Yuexia Li, Chengfang Li, Wenchao Cheng, and Fuhua Yang

Appl. Phys. Lett. 72, 3309 (1998); http://dx.doi.org/10.1063/1.121633 (3 pages) | Cited 4 times

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When an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband LO or LA phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the Coulomb correlation effect. The slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (QWs) in a three-barrier, two-well heterostructure. The influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident QW. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Strong visible photoluminescence from Ge/porous Si structure

Ting Gao, Song Tong, Xiangqin Zheng, Xinglong Wu, Liming Wang, and Ximao Bao

Appl. Phys. Lett. 72, 3312 (1998); http://dx.doi.org/10.1063/1.121634 (2 pages) | Cited 7 times

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Strong visible photoluminescence was observed on Ge/porous silicon structure prepared by pulsed laser deposition of Ge on porous Si. The photoluminescence spectrum shows three subbands peaked at 400, 620, and 720 nm, respectively. The 400 nm peak was ascribed to GeO color centers, and the 720 nm peak to porous Si. The 620 nm peak is much stronger than the light emitting from the host porous Si. Photoluminescence and transmission electronic microscopy analyses suggest that the strong 620 nm luminescence is the result of the joint function of Ge and porous Si in the transition layer of Ge/porous Si structure. Plausible mechanisms for the 620 nm photoluminescence are discussed. © 1998 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
61.72.J- Point defects and defect clusters

Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

M. L. Hildner, R. J. Phaneuf, and E. D. Williams

Appl. Phys. Lett. 72, 3314 (1998); http://dx.doi.org/10.1063/1.121635 (3 pages) | Cited 15 times

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Scanning tunneling microscopy (STM) and spectroscopy are used to characterize a lateral pn junction fabricated on a silicon (100) surface. STM images show both an electronic feature and a structural trench at the edges of the ion-implanted p-type regions. The electronic feature widens with applied reverse bias indicating that it is associated with the depletion zone. The electronic feature and its voltage dependence are described qualitatively by modeling the tip-junction system as a series of nonequilibrium metal–insulator–semiconductor diodes formed with a semiconductor of spatially variable carrier density. © 1998 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
61.80.Jh Ion radiation effects
85.40.Ry Impurity doping, diffusion and ion implantation technology

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, and C. M. Chang

Appl. Phys. Lett. 72, 3317 (1998); http://dx.doi.org/10.1063/1.121636 (3 pages) | Cited 69 times

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In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current–voltage (I–V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)–V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 °C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing. © 1998 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing
73.61.Ey III-V semiconductors

Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region

P. Michler, T. Lilienkamp, W. Ebeling, J. Gutowski, M. Behringer, M. Fehrer, and D. Hommel

Appl. Phys. Lett. 72, 3320 (1998); http://dx.doi.org/10.1063/1.121637 (3 pages) | Cited 2 times

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We present a systematic and quantitative investigation of the quantum confined Stark effect in (Zn, Cd)Se/Zn(S,Se) quantum well structures at room temperature. For this purpose, differential transmission spectroscopy is performed on two samples with different thicknesses of the active layers (4×5 nm and 10 nm) and compared to model calculations. We observe a Stark shift of 18 meV in the heavy-hole exciton peak for an electric-field change from 82 to 175 kV/cm for the 4×5 nm sample. In contrast, the 10 nm sample shows a rather weak and more Franz–Keldysh-like signal. Furthermore, we have analyzed the spectral behavior of the linewidth enhancement factor αH. Values between 5.1 and 0.2 are found at the energy of absolute maximum of the absorption change for the 4×5 nm sample. © 1998 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
42.79.Hp Optical processors, correlators, and modulators

High efficiency blue–green electroluminescence and scanning tunneling microscopy studies of porous silicon

V. A. Kuznetsov, I. Andrienko, and D. Haneman

Appl. Phys. Lett. 72, 3323 (1998); http://dx.doi.org/10.1063/1.121592 (3 pages) | Cited 6 times

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Schottky barrier porous silicon diodes have been fabricated showing electroluminescence peaking at 500 nm, with an internal efficiency for blue–green emission of about 0.1%. The structures, on low-resistivity n-type silicon, operate in reverse bias. Scanning tip light emission measurements show a peak emission at 630 nm, closer to that of photoluminescence from the identical surface at 700 nm than that of the electroluminescence. The latter is concluded to arise from nonquantum effects, at the metal interface. The threshold for visible light emission is at 0.2 mA/cm2, and for infrared light is an order of 10 higher. The lifetime in air is short when unencapsulated, but longer in vacuum. © 1998 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

N. A. Sobolev, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, and A. M. Emel’yanov

Appl. Phys. Lett. 72, 3326 (1998); http://dx.doi.org/10.1063/1.121593 (3 pages) | Cited 17 times

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The behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1 MeV energy and 1×1013 cm−2 dose with subsequent annealing at 1100 °C for 0.25–3 h in an argon or chlorine-containing ambience was studied by photoluminescence (PL), transmission electron microscopy, and chemical etching/Nomarski microscopy. We have found that annealing in the chlorine-containing ambience gives rise to dislocation loops and pure edge dislocations with dominant dislocation-related lines in the PL spectrum. Pure edge dislocations are responsible for the appearance of the lines. The Er-related lines due to the intra-4f shell transitions in the rare-earth ions dominate in the PL spectra and no structural defects are observed after annealing in argon. The observed differences in the optical and structural properties of Si:Er are associated with intrinsic point defects generated during the implantation and annealing. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
61.72.Lk Linear defects: dislocations, disclinations
61.80.Jh Ion radiation effects

Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, and S. Nakamura

Appl. Phys. Lett. 72, 3329 (1998); http://dx.doi.org/10.1063/1.121594 (3 pages) | Cited 38 times

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A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
78.20.Jq Electro-optical effects

Laser stimulated selective area growth of quantum dots

A. Wankerl, A. T. Schremer, and J. R. Shealy

Appl. Phys. Lett. 72, 3332 (1998); http://dx.doi.org/10.1063/1.121684 (3 pages) | Cited 4 times

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We report on the selective area growth of InAs quantum dots on GaAs by ultraviolet (UV) laser stimulated organometallic vapor phase epitaxy. At the low substrate temperature of 435 °C, exposure to a 248.2 nm continuous wave laser beam enhances the InAs growth rate by approximately 30%, causing the transition from two-dimensional (2D) to 3D growth mode to occur in the laser stimulated region only. Photoluminescence spectra from the UV laser stimulated growth region show both wetting layer and quantum dot luminescence, whereas only the wetting layer peak is present in the spectra from the dark grown regions. A photoluminescence map shows good spatial agreement between the region exhibiting quantum dot luminescence and the UV stimulated spot size. Since no quantum dot peak shifts are detected, but the luminescence intensity increases towards the center of the region stimulated with the Gaussian UV beam, we conclude that the island density rather than island size distribution is influenced by the UV intensity. © 1998 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots

S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J. Fan, J. Jiang, and X. G. Xie

Appl. Phys. Lett. 72, 3335 (1998); http://dx.doi.org/10.1063/1.121595 (3 pages) | Cited 96 times

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Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850 °C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dots annealed at 850 °C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850 °C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.55.Cr III-V semiconductors
68.35.Fx Diffusion; interface formation

Characterization of substrate/thin-film interfaces with x-ray microdiffraction

I. C. Noyan, J. Jordan-Sweet, E. G. Liniger, and S. K. Kaldor

Appl. Phys. Lett. 72, 3338 (1998); http://dx.doi.org/10.1063/1.121596 (3 pages) | Cited 22 times

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The (buried) interface between a polycrystalline Al thin-film feature and its substrate (single crystal Si) was characterized with x-ray microdiffraction. Using a focused x-ray beam (effective spot size on the specimen ∼2×12 μm) with the Si 004 reflection, topographic images of the Si around and under the metallization feature were constructed. Comparison with shear-lag model calculations indicate that the interface is not fully coupled despite the absence of surface cracks. © 1998 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.05.C- X-ray diffraction and scattering

Composition modulation in InxGa1−xAs nanocrystals embedded in SiO2 film by radio frequency magnetron cosputtering

Jianzhong Shi, Kaigui Zhu, and Lide Zhang

Appl. Phys. Lett. 72, 3341 (1998); http://dx.doi.org/10.1063/1.121597 (3 pages) | Cited 4 times

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We have succeeded in preparing InxGa1−xAs (0.2 ⩽ x ⩽ 0.8) nanocrystals with 3–5 nm in size embedded in SiO2 thin film by using the radio frequency magnetron cosputtering technique. The analyses of x-ray diffraction and Raman spectra strongly suggest the existence of InxGa1−xAs nanocrystals in the matrices. It has been found that the optical absorption edge, lattice constant and Raman shift can be modulated by composition of InxGa1−xAs by varying the effectively sputtered area ratio of InAs to GaAs on the target. The blueshift of the optical absorption edge is explained by the effective mass approximation method. © 1998 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.55.Nq Composition and phase identification
81.05.Ea III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
61.66.Fn Inorganic compounds

Annealing effects on carbon-induced germanium dots in silicon

S. Schieker, O. G. Schmidt, K. Eberl, N. Y. Jin-Phillipp, and F. Phillipp

Appl. Phys. Lett. 72, 3344 (1998); http://dx.doi.org/10.1063/1.121598 (3 pages) | Cited 18 times

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The growth of 2.4 monolayers Ge on 0.2 monolayers of predeposited C on Si results in the formation of 15 nm size Ge islands. Fifty stacked layers of these C-induced Ge dots are grown on Si (001) at 460 °C. Different pieces of the wafer are annealed at temperatures between 460 and 950 °C and for times ranging from 1 to 20 min at 850 °C. For temperatures higher than 550 °C, a pronounced energy blueshift and an evolution from one broad photoluminescence peak to two well-resolved lines reflect a gradual transition from quantum dot states to quantum well-like states. As transmission electron microscopy images illustrate, diffusion processes completely smear out the sharp interfaces between the dots and the surrounding Si. An activation energy of only 1.6 eV and temperature-dependent diffusion coefficients are derived from simple model calculations. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Cy Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.66.Db Elemental semiconductors and insulators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Ap Elemental semiconductors
68.35.Fx Diffusion; interface formation

Structure and composition of the c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy

B.-K. Han, L. Li, Q. Fu, and R. F. Hicks

Appl. Phys. Lett. 72, 3347 (1998); http://dx.doi.org/10.1063/1.121599 (3 pages) | Cited 13 times

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Surfaces of GaAs (001) were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction. Upon removal from the reactor, the gallium arsenide surface exhibits a (1×2) reconstruction, which is a disordered variant of the c(4×4). The disorder arises from the presence of adsorbed alkyl groups. Heating the sample to 350 °C desorbs the hydrocarbons and produces a well-ordered c(4×4) structure. A model is proposed for the alkyl-terminated (1×2) reconstruction. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Nq Composition and phase identification
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
81.05.Ea III-V semiconductors
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

The effect of offset charge deposited directly onto single-electron devices

M. R. Graham and H. Ahmed

Appl. Phys. Lett. 72, 3350 (1998); http://dx.doi.org/10.1063/1.121600 (3 pages) | Cited 1 time

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The effects of charge deposited directly in the vicinity of a multiple tunnel junction single-electron transistor have been investigated. Two regimes of offset effects have been observed with a continuous transition between them. The deposited charge causes the device current to oscillate in a manner analogous to sweeping the gate voltage, and an equivalence between the two phenomena has been demonstrated. In addition, ions landing very close to the device cause a discontinuous change in the device current such that the arrival of individual ions can be time resolved. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices

Structural and electronic properties of low dielectric constant fluorinated amorphous carbon films

Yanjun Ma, Hongning Yang, J. Guo, C. Sathe, A. Agui, and J. Nordgren

Appl. Phys. Lett. 72, 3353 (1998); http://dx.doi.org/10.1063/1.121601 (3 pages) | Cited 43 times

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Fluorinated amorphous carbon (a-CFx) films were studied by high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with substrate temperature during deposition. The data suggest that the structure of the a-CFx is mostly of carbon rings connected by CF2 groups. The cross linking increases with substrate temperature. © 1998 American Institute of Physics.
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68.55.Nq Composition and phase identification
77.55.-g Dielectric thin films
61.43.Er Other amorphous solids
73.61.Ng Insulators
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.70.Dm X-ray absorption spectra
78.70.En X-ray emission spectra and fluorescence
79.60.Ht Disordered structures
79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Thin film electroluminescence in highly anisotropic oxide materials

T. Xiao, A. H. Kitai, G. Liu, A. Nakua, and J. Barbier

Appl. Phys. Lett. 72, 3356 (1998); http://dx.doi.org/10.1063/1.121602 (3 pages) | Cited 27 times

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A criterion for high performance electroluminescent (EL) phosphor based on the crystal structure of the phosphor host has been developed. The performance of some best-performing EL oxide phosphors is correlated to the fundamental atomic arrangements of the phosphor host and to the microstructural characteristics of their thin films. It is shown that, contrary to popular beliefs, oxide phosphors with certain crystallographic features do have the capability of transporting significant current densities of hot electrons. Examples of newly developed high brightness and efficiency oxide EL phosphors are presented. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.60.Fi Electroluminescence
68.55.-a Thin film structure and morphology
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