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29 Jun 1998

Volume 72, Issue 26, pp. 3399-3517

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Power-gated spectral holeburning in MgS:Eu2+, Eu3+: A case for high-density persistent spectral holeburning

Z. Hasan, L. Biyikli, and P. I. Macfarlane

Appl. Phys. Lett. 72, 3399 (1998); http://dx.doi.org/10.1063/1.121677 (3 pages) | Cited 12 times

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We present the case of photoionization-induced holeburning in rare-earth-doped II–VI compounds for high-density persistent holeburning. In this case, the photoproduct of holeburning is distributed across the entire zero-phonon line. This maximizes the total number of possible spectral holes that can be burned into an inhomogeneous line as well as produces holes that are photoerasable. Experimental data on photon-gated holeburning in MgS:Eu2+, Eu3+ are presented. With the proper choice of the host electronic band structure, the optically active rare-earth ion and its electronic transitions involved in the holeburning process, to the best of our knowledge we have observed the highest number of photon-gated holes ever burned in a single electronic transition. The features of these holes are that they suffer no detectable erasure after several thousands of read cycles, they survive thermal cycling to ∼150 K, and they are completely photoerasable. A special case of photon-gated holeburning, power-gated holeburning, was employed to demonstrate that, in such systems, a single laser can be used for burning, reading, and erasing of the spectral holes. © 1998 American Institute of Physics.
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42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.20.Ps Other inorganic compounds

Generation of 14 GHz radiation using a two frequency iodine laser

J. W. Nicholson, W. Rudolph, and G. Hager

Appl. Phys. Lett. 72, 3402 (1998); http://dx.doi.org/10.1063/1.121646 (3 pages)

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A mode-locked and gain-switched photolytic iodine laser Zeeman tuned to operate simultaneously on the two strongest hyperfine transitions is shown to emit 1.315 μm radiation modulated at 13.9 GHz. The interaction of this laser radiation with suitable targets leads to the generation of microwave pulses that consist of only a few cycles at 13.9 GHz, making the system attractive for ultra-wide-band, short pulse radar applications. © 1998 American Institute of Physics.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

All-optical mode mixer spatial switch based on cascading in lithium niobate

Yongsoon Baek, Roland Schiek, George Stegeman, Gaetano Assanto, and W. Sohler

Appl. Phys. Lett. 72, 3405 (1998); http://dx.doi.org/10.1063/1.121647 (3 pages) | Cited 8 times

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An all-optically induced spatial shift in the interference between the two lowest-order modes of a lithium niobate channel waveguide was demonstrated based on the power-dependent nonlinear phase shift induced via quadratic cascading. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Electroluminescence from Si/Si oxynitride superlattices

G. F. Bai, Y. P. Qiao, Z. C. Ma, W. H. Zong, and G. G. Qin

Appl. Phys. Lett. 72, 3408 (1998); http://dx.doi.org/10.1063/1.121648 (3 pages) | Cited 5 times

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The Si/Si oxynitride superlattices, with three periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si oxynitride layers and Si layers in the superlattices are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) from a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure has been observed. Each EL spectrum of the structure has a dominant peak around 640 nm, a weaker peak around 520 nm, and a shoulder around 820 nm. By comparing the EL from the semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure with that from a semitransparent Au film/Si oxynitride film/p-Si structure, we found that the EL efficiency of the former structure is about 2–4 times of that of the latter one. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
78.66.Nk Insulators
81.15.Cd Deposition by sputtering

Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides

L. Kou, D. C. Hall, and H. Wu

Appl. Phys. Lett. 72, 3411 (1998); http://dx.doi.org/10.1063/1.121649 (3 pages) | Cited 17 times

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Data are presented demonstrating 300 K, continuous wave (cw) photoluminescence near λ = 1.53 μm from Er-implanted Al0.8Ga0.2As films oxidized in water vapor (N2+H2O, 500 °C) and annealed (1 h, 700 °C) in Ar+O2. The 40 nm full width at half-maximum (FWHM) spectra are 1.5× broader and ∼ 10× more intense relative to spectra from unoxidized but annealed samples. The fluorescence decay shows a τ = 7 ms lifetime, with a faster τ = 1.9 ms component characteristic of a cooperative upconversion mechanism. The data suggest that AlxGa1−xAs native oxides may provide a suitable host for rare-earth optical activity. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Continuous-wave, broadband tuning from 788 to 1640 nm by a doubly resonant, MgO:LiNbO3 optical parametric oscillator

Masaki Tsunekane, Shinji Kimura, Mikio Kimura, Noboru Taguchi, and Humio Inaba

Appl. Phys. Lett. 72, 3414 (1998); http://dx.doi.org/10.1063/1.121650 (3 pages) | Cited 7 times

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This letter reports exceptionally broadband tuning of a continuous-wave optical parametric oscillator (cw OPO) using a temperature tuned, nonlinear crystal of MgO:LiNbO3 pumped by a diode-pumped, intracavity doubled Nd:YAG laser. The tuning range from 788 to 1640 nm, is about four times broader than those ever reported in cw OPOs operating around 1 μm. This performance was accomplished by newly developed, extremely broadband, high-reflection mirrors for the doubly resonant oscillation, designed to have a reflectivity of 99% from 0.7 to 1.6 μm. Threshold pump power increased from 80 mW near degeneracy to 150 mW at the tuning band edge in a double pass pumping configuration. © 1998 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers

Room temperature photoinduced Faraday rotation in Hg1−xMnxTe alloys at 1550 nm

G. Ghislotti, C. Masseroni, A. Zappettini, M. Martinelli, and A. Mycielski

Appl. Phys. Lett. 72, 3417 (1998); http://dx.doi.org/10.1063/1.121651 (3 pages) | Cited 2 times

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Faraday rotation of the polarization for a 1550 nm probe beam induced by a pump beam at shorter wavelength is studied in Hg1−xMnxTe semimagnetic semiconductors. Photoinduced rotation decays in a nanosecond timescale and it is related to carrier-induced refractive index saturation. Observed decay is discussed in terms of photoexcited carrier dynamics. © 1998 American Institute of Physics.
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78.20.Ls Magneto-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

1000 V/μm pulsed poling technique for photolime-gel electro-optic polymer with room-temperature repoling feature

Zhou Z. Yue, Dechang An, Ray T. Chen, and Suning Tang

Appl. Phys. Lett. 72, 3420 (1998); http://dx.doi.org/10.1063/1.121652 (2 pages) | Cited 2 times

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An electric pulsed-poling technique is developed for achieving high-performance electro-optic polymers. A high poling field of 1 kV/μm can be applied across a polymer thin film without experiencing breakdown. This poling technique has been applied to a guest-host nonlinear polymeric system of photolime gel and chlorophenol red with loading concentration of 30 wt %. An electro-optic coefficient up to 40 pm/V at the 632.8 nm wavelength is achieved, which is 35% higher than that obtained by using conventional poling approaches. After decay the electro-optic coefficient can be fully recovered using the same poling method at room temperature. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
77.22.Ej Polarization and depolarization
77.84.Jd Polymers; organic compounds
77.22.Jp Dielectric breakdown and space-charge effects

Edge detection readout signal and cross talk in phase-change optical data storage

Chubing Peng, M. Mansuripur, and K. Nagata

Appl. Phys. Lett. 72, 3422 (1998); http://dx.doi.org/10.1063/1.121653 (3 pages) | Cited 1 time

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Readout signal, noise, and cross-track cross talk were investigated for edge detection in a phase-change optical data storage system. Both theoretical and experimental results indicate that edge detection has a performance superior to the conventional detection of reflectance variations, especially when the amorphous marks are shorter than the size of the focused spot. More than 50 dB of carrier to noise ratio for marks of 0.36 μm in length is obtained using light at a wavelength of 690 nm and an objective lens of 0.6 numerical aperture. Diffraction analysis on the cross talk has shown that, in the scheme of land-groove recording, there is no optimum groove depth which can cancel the cross talk from adjacent tracks. © 1998 American Institute of Physics.
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42.30.Sy Pattern recognition
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
07.05.Pj Image processing

A single-mode high-power vertical cavity surface emitting laser

T. Milster, W. Jiang, E. Walker, D. Burak, P. Claisse, P. Kelly, and R. Binder

Appl. Phys. Lett. 72, 3425 (1998); http://dx.doi.org/10.1063/1.121654 (3 pages) | Cited 8 times

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We show how a structural element introduced into a vertical cavity surface emitting laser (VCSEL) results in the device operating in single stable high-order mode. The results from a 55 μm diameter device, λ = 772 nm, are presented. The stability of the mode structure is investigated as a function of injection current. A simple theory, based on a modal loss discrimination mechanism in VCSELs with slightly perturbed mirrors, is used to explain the preferred lasing mode in VCSEL structures using a central etched well. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers

Andrei Popov, Victor Sherstnev, Yury Yakovlev, Peter Werle, and Robert Mücke

Appl. Phys. Lett. 72, 3428 (1998); http://dx.doi.org/10.1063/1.121655 (3 pages) | Cited 2 times

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Relaxation oscillations have been investigated in A3B5 narrow band-gap semiconductor lasers. Based on wideband intensity noise measurements, the relaxation oscillation frequency has been observed up to 2 GHz for a 2 mW cw single-frequency InAsSb laser at a 3.4 μm wavelength. Laser parameters that influence the bandwidth, including the photon lifetime τp, the differential gain A and the spontaneous recombination lifetime τs were calculated from experimental data obtained at 95 K. We found τp in the range 0.7–1.9 ps, A was estimated to be (4.7–7.3)×10−6 cm−3 s−1 and τs = 2.5–6.9 ns. Relaxation oscillations occurred beyond the modulation bandwidth required for typical applications of antimonide lasers in spectroscopy. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Erbium doping of LiNbO3 by the ion exchange process

C. Sada, E. Borsella, F. Caccavale, F. Gonella, F. Segato, Yu. N. Korkishko, V. A. Fedorov, T. M. Morozova, G. Battaglin, and R. Polloni

Appl. Phys. Lett. 72, 3431 (1998); http://dx.doi.org/10.1063/1.121656 (3 pages) | Cited 10 times

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Erbium-doped LiNbO3 slides are fabricated by the ion exchange process. Compositional in-depth profiles of the species involved in the exchange are obtained by secondary ion mass spectrometry. Spectroscopic properties of Er3+ ions in the matrix are determined by photoluminescence spectroscopy. Structural and spectroscopic analyses suggest the formation of two different microstructures in the exchanged region. The potential of ion exchange for a controlled doping of LiNbO3 is outlined. © 1998 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.up Other materials
61.72.S- Impurities in crystals
78.55.Hx Other solid inorganic materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers

H. Q. Le, C. H. Lin, and S. S. Pei

Appl. Phys. Lett. 72, 3434 (1998); http://dx.doi.org/10.1063/1.121657 (3 pages) | Cited 23 times

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A 4 μm GaInSb/InAs type-II quantum well (QW) laser has shown a substantial improvement in internal loss and quantum efficiency, which has been a problem for this type of laser. It yielded 0.9–1.5 W peak, 90–150 mW average single-ended output for 0.1–1 ms pulses at 71 K, with a net power efficiency of ∼3.5%–4%. The power and efficiency are among the highest long-pulse results reported for any semiconductor laser of comparable wavelength. Comparison with similar QW lasers suggests that the improvement is a result of better material growth. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

L. C. Qin, D. Zhou, A. R. Krauss, and D. M. Gruen

Appl. Phys. Lett. 72, 3437 (1998); http://dx.doi.org/10.1063/1.121658 (3 pages) | Cited 63 times

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A processing route has been developed to grow bundles of carbon nanotubes on substrates from methane and hydrogen mixtures by microwave plasma-enhanced chemical vapor deposition, catalyzed by iron particles reduced from ferric nitrate. Growth takes place at about 900 °C leading to nanotubes with lengths of more than 20 μm and diameters on the nanometer scale. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Long rectangular islands of β-Ga2O3 on CoGa(001)—studied by electron energy loss spectroscopy and scanning tunneling microscopy

M. Eumann, G. Schmitz, and R. Franchy

Appl. Phys. Lett. 72, 3440 (1998); http://dx.doi.org/10.1063/1.121659 (3 pages) | Cited 9 times

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At 700 K, the oxidation with 1 L O2 of CoGa(001) was investigated by means of high-resolution electron energy loss spectroscopy (EELS), low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy (STM). Oxidation with 1 L O2 at 700 K leads to the formation of long, rectangular islands of β-Ga2O3 oriented in the [100] and [010] directions of the substrate. EEL spectra of the islands of β-Ga2O3 show intense Fuchs–Kliewer (FK) modes at 305, 455, 645, and 780 cm−1. The β-Ga2O3 islands are well ordered and show a (2×1) structure with two domains, oriented perpendicular to each other. The two-dimensional lattice parameters of β-Ga2O3 are determined to be a = 2.8±0.1 Å and b = 5.8±0.1 Å. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
79.20.Kz Other electron-impact emission phenomena
79.20.Fv Electron impact: Auger emission
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Effect of lattice mismatch strains on the structural and magnetic properties of barium ferrite films

S. R. Shinde, R. Ramesh, S. E. Lofland, S. M. Bhagat, S. B. Ogale, R. P. Sharma, and T. Venkatesan

Appl. Phys. Lett. 72, 3443 (1998); http://dx.doi.org/10.1063/1.121660 (3 pages) | Cited 34 times

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The effect of substrate-induced lattice strains on the structural and magnetic properties of epitaxial barium ferrite (BaFe12O19) thin films is studied. The 5000 Å thick film shows a very narrow ferromagnetic resonance (FMR) line with a width of about 140 Oe. After appropriate annealing, the linewidth measured at 58 GHz decreases to 37 Oe, which to the best of our knowledge is about two times smaller than the best previously reported value for epitaxial thin films. FMR studies show that the presence of strains broadens resonance absorption. © 1998 American Institute of Physics.
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75.50.Gg Ferrimagnetics
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance

The dielectric properties of polycrystalline C60

Feng Yan and Ye-Ning Wang

Appl. Phys. Lett. 72, 3446 (1998); http://dx.doi.org/10.1063/1.121661 (3 pages) | Cited 4 times

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The dielectric properties (1–50 kHz) of polycrystalline C60 have been carefully studied from 70 to 300 K. Below 170 K, the ac conductance σ(T) is proportional to the temperature, which is thought to be due to the phonon-assisted jump of electrons between localized states around the Fermi level. A significant change of the slope of the capacitance versus temperature curve occurs at 85 K, which can be attributed to the glass transition. It is confirmed that electric dipoles may be induced by orientational defects in C60 crystal. The capacitance drop around 256 K is found to originate from the disappearance of the orientational defects above the order–disorder phase-transition temperature. © 1998 American Institute of Physics.
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71.20.Tx Fullerenes and related materials; intercalation compounds
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
71.55.Jv Disordered structures; amorphous and glassy solids
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.70.K- Solid-solid transitions

The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen

L. C. Chen, T. R. Lu, C. T. Kuo, D. M. Bhusari, J. J. Wu, K. H. Chen, and T. M. Chen

Appl. Phys. Lett. 72, 3449 (1998); http://dx.doi.org/10.1063/1.121662 (3 pages) | Cited 24 times

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Carbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4). The compound has a six-membered ring structure similar to that existing in the hypothetical β-C3N4. Except for the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43–0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm−1, corresponding to C–N and C�N stretching modes, respectively. No detectable peak at 2200 cm−1 (C�N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Å, comparable to the d spacing of the (110) orientation in the β-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators

Electromigration-induced failure of metallic thin films due to transgranular void propagation

M. Rauf Gungor and Dimitrios Maroudas

Appl. Phys. Lett. 72, 3452 (1998); http://dx.doi.org/10.1063/1.121663 (3 pages) | Cited 45 times

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A theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Self-consistent dynamical simulations emphasize the important roles of the anisotropy of void surface diffusivity, the strength of the applied electric field, and the void size. Our simulations predict formation of stable faceted voids, formation of wedge-shaped voids through a facet selection mechanism, as well as failure due to propagation of slitlike features from void surfaces, in excellent agreement with recent experimental observations. © 1998 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
61.72.Qq Microscopic defects (voids, inclusions, etc.)
66.30.Qa Electromigration
68.35.Fx Diffusion; interface formation
62.20.-x Mechanical properties of solids

Evidence of ferromagnetic behavior of small liquid droplets produced from amorphous alloys by laser ablation

A. N. Grigorenko, P. I. Nikitin, A. Yu. Toporov, A. M. Ghorbanzadeh, A. Perrone, A. Zocco, and M.-L. De Giorgi

Appl. Phys. Lett. 72, 3455 (1998); http://dx.doi.org/10.1063/1.121664 (3 pages) | Cited 2 times

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Experimental evidence of ferromagnetic behavior of liquid droplets produced by laser ablation from amorphous alloys is presented. Thin films of amorphous magnetic materials were fabricated by laser ablation deposition in the presence and in the absence of a magnetic field. The difference in parameters of deposited films is attributed to ferromagnetic properties of small size liquid droplets. © 1998 American Institute of Physics.
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75.50.Mm Magnetic liquids
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.50.Bb Fe and its alloys

Nanoscale silicon wires synthesized using simple physical evaporation

D. P. Yu, Z. G. Bai, Y. Ding, Q. L. Hang, H. Z. Zhang, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, H. T. Zhou, and S. Q. Feng

Appl. Phys. Lett. 72, 3458 (1998); http://dx.doi.org/10.1063/1.121665 (3 pages) | Cited 182 times

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We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. © 1998 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
61.46.-w Structure of nanoscale materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
78.55.Ap Elemental semiconductors

Intermittent contact scanning force microscopy: The role of the liquid necks

M. Luna, J. Colchero, and A. M. Baró

Appl. Phys. Lett. 72, 3461 (1998); http://dx.doi.org/10.1063/1.121666 (3 pages) | Cited 36 times

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We have studied the intermittent contact mode for small oscillation amplitudes and soft cantilevers with sharp tips. For appropriate working conditions the tip does not touch the mica surface. Instead, a high dissipative tip–sample interaction takes place which reduces the oscillation amplitude of the cantilever. Our experiments show that this dissipative interaction is related to the relative humidity and we believe that it is induced by a nanometer sized liquid neck between tip and sample. A phase contrast image on different surface materials is then due mainly to the wetting properties of the corresponding material rather than to their elastic or viscoelastic properties. The intermittent contact mode described in this work is especially advantageous since the tip is extremely gentle with the surface. © 1998 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
87.64.Dz Scanning tunneling and atomic force microscopy

Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)

Like Ruan and D. M. Chen

Appl. Phys. Lett. 72, 3464 (1998); http://dx.doi.org/10.1063/1.121667 (3 pages) | Cited 9 times

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The long-standing pinhole problem in solid phase epitaxial growth of a CoSi2 film on Si(111) has been revisited with in situ scanning tunneling microscopy. While the as-deposited film with 5 Å of Co at room temperature shows a smooth granular texture with original substrate terraces remaining intact, annealing at 580 °C produces an epitaxial CoSi2 film with large pinholes enclosed by a thin ring CoSi2, exhibiting a volcano feature. Quantitative analysis shows that the formation of pinholes is a result of rapid Si outward diffusion from bulk to surface, and of the subsequent Si reaction with Co on the outer surface. Evidence suggests that inhibiting the Si diffusion channels during the thermal annealing process is the key to solving the pinhole problem. © 1998 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Ct Interface structure and roughness
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Theoretical investigation of edge dislocations in AlN

A. F. Wright and J. Furthmüller

Appl. Phys. Lett. 72, 3467 (1998); http://dx.doi.org/10.1063/1.121668 (3 pages) | Cited 24 times

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The structures and formation energies of neutral and charged edge dislocations in AlN are investigated via density-functional-theory calculations. Stoichiometric structures having full and open cores are considered as well as nonstoichiometric structures having aluminum or nitrogen vacancies along the dislocation core. Formation energies are found to depend strongly on the Fermi level, due to the presence of defect levels in the band gap, and on growth conditions for the case of the nonstoichiometric structures. A structure having aluminum vacancies along the dislocation core is predicted to be most stable in n-type material grown under nitrogen-rich conditions, whereas a nitrogen-vacancy structure is most stable in p-type material grown under aluminum-rich conditions. Estimates are also given for defect energy levels in the gap. © 1998 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.Lk Linear defects: dislocations, disclinations
61.72.Bb Theories and models of crystal defects
61.66.Bi Elemental solids
61.66.Dk Alloys
71.20.Nr Semiconductor compounds
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors

Recombination lifetime of In0.53Ga0.47As as a function of doping density

R. K. Ahrenkiel, R. Ellingson, S. Johnston, and M. Wanlass

Appl. Phys. Lett. 72, 3470 (1998); http://dx.doi.org/10.1063/1.121669 (3 pages) | Cited 39 times

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We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019 cm−3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley–Read–Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced. © 1998 American Institute of Physics.
Show PACS
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.20.Fv Electron impact: Auger emission
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