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29 Jun 1998

Volume 72, Issue 26, pp. 3399-3517

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Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

L. C. Qin, D. Zhou, A. R. Krauss, and D. M. Gruen

Appl. Phys. Lett. 72, 3437 (1998); http://dx.doi.org/10.1063/1.121658 (3 pages) | Cited 63 times

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A processing route has been developed to grow bundles of carbon nanotubes on substrates from methane and hydrogen mixtures by microwave plasma-enhanced chemical vapor deposition, catalyzed by iron particles reduced from ferric nitrate. Growth takes place at about 900 °C leading to nanotubes with lengths of more than 20 μm and diameters on the nanometer scale. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Long rectangular islands of β-Ga2O3 on CoGa(001)—studied by electron energy loss spectroscopy and scanning tunneling microscopy

M. Eumann, G. Schmitz, and R. Franchy

Appl. Phys. Lett. 72, 3440 (1998); http://dx.doi.org/10.1063/1.121659 (3 pages) | Cited 9 times

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At 700 K, the oxidation with 1 L O2 of CoGa(001) was investigated by means of high-resolution electron energy loss spectroscopy (EELS), low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy (STM). Oxidation with 1 L O2 at 700 K leads to the formation of long, rectangular islands of β-Ga2O3 oriented in the [100] and [010] directions of the substrate. EEL spectra of the islands of β-Ga2O3 show intense Fuchs–Kliewer (FK) modes at 305, 455, 645, and 780 cm−1. The β-Ga2O3 islands are well ordered and show a (2×1) structure with two domains, oriented perpendicular to each other. The two-dimensional lattice parameters of β-Ga2O3 are determined to be a = 2.8±0.1 Å and b = 5.8±0.1 Å. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
79.20.Kz Other electron-impact emission phenomena
79.20.Fv Electron impact: Auger emission
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Effect of lattice mismatch strains on the structural and magnetic properties of barium ferrite films

S. R. Shinde, R. Ramesh, S. E. Lofland, S. M. Bhagat, S. B. Ogale, R. P. Sharma, and T. Venkatesan

Appl. Phys. Lett. 72, 3443 (1998); http://dx.doi.org/10.1063/1.121660 (3 pages) | Cited 34 times

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The effect of substrate-induced lattice strains on the structural and magnetic properties of epitaxial barium ferrite (BaFe12O19) thin films is studied. The 5000 Å thick film shows a very narrow ferromagnetic resonance (FMR) line with a width of about 140 Oe. After appropriate annealing, the linewidth measured at 58 GHz decreases to 37 Oe, which to the best of our knowledge is about two times smaller than the best previously reported value for epitaxial thin films. FMR studies show that the presence of strains broadens resonance absorption. © 1998 American Institute of Physics.
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75.50.Gg Ferrimagnetics
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance

The dielectric properties of polycrystalline C60

Feng Yan and Ye-Ning Wang

Appl. Phys. Lett. 72, 3446 (1998); http://dx.doi.org/10.1063/1.121661 (3 pages) | Cited 4 times

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The dielectric properties (1–50 kHz) of polycrystalline C60 have been carefully studied from 70 to 300 K. Below 170 K, the ac conductance σ(T) is proportional to the temperature, which is thought to be due to the phonon-assisted jump of electrons between localized states around the Fermi level. A significant change of the slope of the capacitance versus temperature curve occurs at 85 K, which can be attributed to the glass transition. It is confirmed that electric dipoles may be induced by orientational defects in C60 crystal. The capacitance drop around 256 K is found to originate from the disappearance of the orientational defects above the order–disorder phase-transition temperature. © 1998 American Institute of Physics.
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71.20.Tx Fullerenes and related materials; intercalation compounds
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
71.55.Jv Disordered structures; amorphous and glassy solids
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.70.K- Solid-solid transitions

The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen

L. C. Chen, T. R. Lu, C. T. Kuo, D. M. Bhusari, J. J. Wu, K. H. Chen, and T. M. Chen

Appl. Phys. Lett. 72, 3449 (1998); http://dx.doi.org/10.1063/1.121662 (3 pages) | Cited 24 times

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Carbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4). The compound has a six-membered ring structure similar to that existing in the hypothetical β-C3N4. Except for the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43–0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm−1, corresponding to C–N and C�N stretching modes, respectively. No detectable peak at 2200 cm−1 (C�N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Å, comparable to the d spacing of the (110) orientation in the β-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators

Electromigration-induced failure of metallic thin films due to transgranular void propagation

M. Rauf Gungor and Dimitrios Maroudas

Appl. Phys. Lett. 72, 3452 (1998); http://dx.doi.org/10.1063/1.121663 (3 pages) | Cited 45 times

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A theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Self-consistent dynamical simulations emphasize the important roles of the anisotropy of void surface diffusivity, the strength of the applied electric field, and the void size. Our simulations predict formation of stable faceted voids, formation of wedge-shaped voids through a facet selection mechanism, as well as failure due to propagation of slitlike features from void surfaces, in excellent agreement with recent experimental observations. © 1998 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
61.72.Qq Microscopic defects (voids, inclusions, etc.)
66.30.Qa Electromigration
68.35.Fx Diffusion; interface formation
62.20.-x Mechanical properties of solids

Evidence of ferromagnetic behavior of small liquid droplets produced from amorphous alloys by laser ablation

A. N. Grigorenko, P. I. Nikitin, A. Yu. Toporov, A. M. Ghorbanzadeh, A. Perrone, A. Zocco, and M.-L. De Giorgi

Appl. Phys. Lett. 72, 3455 (1998); http://dx.doi.org/10.1063/1.121664 (3 pages) | Cited 2 times

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Experimental evidence of ferromagnetic behavior of liquid droplets produced by laser ablation from amorphous alloys is presented. Thin films of amorphous magnetic materials were fabricated by laser ablation deposition in the presence and in the absence of a magnetic field. The difference in parameters of deposited films is attributed to ferromagnetic properties of small size liquid droplets. © 1998 American Institute of Physics.
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75.50.Mm Magnetic liquids
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.50.Bb Fe and its alloys

Nanoscale silicon wires synthesized using simple physical evaporation

D. P. Yu, Z. G. Bai, Y. Ding, Q. L. Hang, H. Z. Zhang, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, H. T. Zhou, and S. Q. Feng

Appl. Phys. Lett. 72, 3458 (1998); http://dx.doi.org/10.1063/1.121665 (3 pages) | Cited 183 times

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We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. © 1998 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
61.46.-w Structure of nanoscale materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
78.55.Ap Elemental semiconductors

Intermittent contact scanning force microscopy: The role of the liquid necks

M. Luna, J. Colchero, and A. M. Baró

Appl. Phys. Lett. 72, 3461 (1998); http://dx.doi.org/10.1063/1.121666 (3 pages) | Cited 36 times

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We have studied the intermittent contact mode for small oscillation amplitudes and soft cantilevers with sharp tips. For appropriate working conditions the tip does not touch the mica surface. Instead, a high dissipative tip–sample interaction takes place which reduces the oscillation amplitude of the cantilever. Our experiments show that this dissipative interaction is related to the relative humidity and we believe that it is induced by a nanometer sized liquid neck between tip and sample. A phase contrast image on different surface materials is then due mainly to the wetting properties of the corresponding material rather than to their elastic or viscoelastic properties. The intermittent contact mode described in this work is especially advantageous since the tip is extremely gentle with the surface. © 1998 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
87.64.Dz Scanning tunneling and atomic force microscopy

Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)

Like Ruan and D. M. Chen

Appl. Phys. Lett. 72, 3464 (1998); http://dx.doi.org/10.1063/1.121667 (3 pages) | Cited 9 times

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The long-standing pinhole problem in solid phase epitaxial growth of a CoSi2 film on Si(111) has been revisited with in situ scanning tunneling microscopy. While the as-deposited film with 5 Å of Co at room temperature shows a smooth granular texture with original substrate terraces remaining intact, annealing at 580 °C produces an epitaxial CoSi2 film with large pinholes enclosed by a thin ring CoSi2, exhibiting a volcano feature. Quantitative analysis shows that the formation of pinholes is a result of rapid Si outward diffusion from bulk to surface, and of the subsequent Si reaction with Co on the outer surface. Evidence suggests that inhibiting the Si diffusion channels during the thermal annealing process is the key to solving the pinhole problem. © 1998 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Ct Interface structure and roughness
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