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29 Jun 1998

Volume 72, Issue 26, pp. 3399-3517

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Power-gated spectral holeburning in MgS:Eu2+, Eu3+: A case for high-density persistent spectral holeburning

Z. Hasan, L. Biyikli, and P. I. Macfarlane

Appl. Phys. Lett. 72, 3399 (1998); http://dx.doi.org/10.1063/1.121677 (3 pages) | Cited 12 times

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We present the case of photoionization-induced holeburning in rare-earth-doped II–VI compounds for high-density persistent holeburning. In this case, the photoproduct of holeburning is distributed across the entire zero-phonon line. This maximizes the total number of possible spectral holes that can be burned into an inhomogeneous line as well as produces holes that are photoerasable. Experimental data on photon-gated holeburning in MgS:Eu2+, Eu3+ are presented. With the proper choice of the host electronic band structure, the optically active rare-earth ion and its electronic transitions involved in the holeburning process, to the best of our knowledge we have observed the highest number of photon-gated holes ever burned in a single electronic transition. The features of these holes are that they suffer no detectable erasure after several thousands of read cycles, they survive thermal cycling to ∼150 K, and they are completely photoerasable. A special case of photon-gated holeburning, power-gated holeburning, was employed to demonstrate that, in such systems, a single laser can be used for burning, reading, and erasing of the spectral holes. © 1998 American Institute of Physics.
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42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.20.Ps Other inorganic compounds

Generation of 14 GHz radiation using a two frequency iodine laser

J. W. Nicholson, W. Rudolph, and G. Hager

Appl. Phys. Lett. 72, 3402 (1998); http://dx.doi.org/10.1063/1.121646 (3 pages)

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A mode-locked and gain-switched photolytic iodine laser Zeeman tuned to operate simultaneously on the two strongest hyperfine transitions is shown to emit 1.315 μm radiation modulated at 13.9 GHz. The interaction of this laser radiation with suitable targets leads to the generation of microwave pulses that consist of only a few cycles at 13.9 GHz, making the system attractive for ultra-wide-band, short pulse radar applications. © 1998 American Institute of Physics.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

All-optical mode mixer spatial switch based on cascading in lithium niobate

Yongsoon Baek, Roland Schiek, George Stegeman, Gaetano Assanto, and W. Sohler

Appl. Phys. Lett. 72, 3405 (1998); http://dx.doi.org/10.1063/1.121647 (3 pages) | Cited 8 times

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An all-optically induced spatial shift in the interference between the two lowest-order modes of a lithium niobate channel waveguide was demonstrated based on the power-dependent nonlinear phase shift induced via quadratic cascading. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Electroluminescence from Si/Si oxynitride superlattices

G. F. Bai, Y. P. Qiao, Z. C. Ma, W. H. Zong, and G. G. Qin

Appl. Phys. Lett. 72, 3408 (1998); http://dx.doi.org/10.1063/1.121648 (3 pages) | Cited 5 times

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The Si/Si oxynitride superlattices, with three periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si oxynitride layers and Si layers in the superlattices are 2.0 and 1.4 nm, respectively. Visible electroluminescence (EL) from a semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure has been observed. Each EL spectrum of the structure has a dominant peak around 640 nm, a weaker peak around 520 nm, and a shoulder around 820 nm. By comparing the EL from the semitransparent Au film/(Si/Si oxynitride) superlattice/p-Si structure with that from a semitransparent Au film/Si oxynitride film/p-Si structure, we found that the EL efficiency of the former structure is about 2–4 times of that of the latter one. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
78.66.Nk Insulators
81.15.Cd Deposition by sputtering

Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides

L. Kou, D. C. Hall, and H. Wu

Appl. Phys. Lett. 72, 3411 (1998); http://dx.doi.org/10.1063/1.121649 (3 pages) | Cited 17 times

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Data are presented demonstrating 300 K, continuous wave (cw) photoluminescence near λ = 1.53 μm from Er-implanted Al0.8Ga0.2As films oxidized in water vapor (N2+H2O, 500 °C) and annealed (1 h, 700 °C) in Ar+O2. The 40 nm full width at half-maximum (FWHM) spectra are 1.5× broader and ∼ 10× more intense relative to spectra from unoxidized but annealed samples. The fluorescence decay shows a τ = 7 ms lifetime, with a faster τ = 1.9 ms component characteristic of a cooperative upconversion mechanism. The data suggest that AlxGa1−xAs native oxides may provide a suitable host for rare-earth optical activity. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Continuous-wave, broadband tuning from 788 to 1640 nm by a doubly resonant, MgO:LiNbO3 optical parametric oscillator

Masaki Tsunekane, Shinji Kimura, Mikio Kimura, Noboru Taguchi, and Humio Inaba

Appl. Phys. Lett. 72, 3414 (1998); http://dx.doi.org/10.1063/1.121650 (3 pages) | Cited 7 times

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This letter reports exceptionally broadband tuning of a continuous-wave optical parametric oscillator (cw OPO) using a temperature tuned, nonlinear crystal of MgO:LiNbO3 pumped by a diode-pumped, intracavity doubled Nd:YAG laser. The tuning range from 788 to 1640 nm, is about four times broader than those ever reported in cw OPOs operating around 1 μm. This performance was accomplished by newly developed, extremely broadband, high-reflection mirrors for the doubly resonant oscillation, designed to have a reflectivity of 99% from 0.7 to 1.6 μm. Threshold pump power increased from 80 mW near degeneracy to 150 mW at the tuning band edge in a double pass pumping configuration. © 1998 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers

Room temperature photoinduced Faraday rotation in Hg1−xMnxTe alloys at 1550 nm

G. Ghislotti, C. Masseroni, A. Zappettini, M. Martinelli, and A. Mycielski

Appl. Phys. Lett. 72, 3417 (1998); http://dx.doi.org/10.1063/1.121651 (3 pages) | Cited 2 times

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Faraday rotation of the polarization for a 1550 nm probe beam induced by a pump beam at shorter wavelength is studied in Hg1−xMnxTe semimagnetic semiconductors. Photoinduced rotation decays in a nanosecond timescale and it is related to carrier-induced refractive index saturation. Observed decay is discussed in terms of photoexcited carrier dynamics. © 1998 American Institute of Physics.
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78.20.Ls Magneto-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

1000 V/μm pulsed poling technique for photolime-gel electro-optic polymer with room-temperature repoling feature

Zhou Z. Yue, Dechang An, Ray T. Chen, and Suning Tang

Appl. Phys. Lett. 72, 3420 (1998); http://dx.doi.org/10.1063/1.121652 (2 pages) | Cited 2 times

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An electric pulsed-poling technique is developed for achieving high-performance electro-optic polymers. A high poling field of 1 kV/μm can be applied across a polymer thin film without experiencing breakdown. This poling technique has been applied to a guest-host nonlinear polymeric system of photolime gel and chlorophenol red with loading concentration of 30 wt %. An electro-optic coefficient up to 40 pm/V at the 632.8 nm wavelength is achieved, which is 35% higher than that obtained by using conventional poling approaches. After decay the electro-optic coefficient can be fully recovered using the same poling method at room temperature. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
77.22.Ej Polarization and depolarization
77.84.Jd Polymers; organic compounds
77.22.Jp Dielectric breakdown and space-charge effects

Edge detection readout signal and cross talk in phase-change optical data storage

Chubing Peng, M. Mansuripur, and K. Nagata

Appl. Phys. Lett. 72, 3422 (1998); http://dx.doi.org/10.1063/1.121653 (3 pages) | Cited 1 time

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Readout signal, noise, and cross-track cross talk were investigated for edge detection in a phase-change optical data storage system. Both theoretical and experimental results indicate that edge detection has a performance superior to the conventional detection of reflectance variations, especially when the amorphous marks are shorter than the size of the focused spot. More than 50 dB of carrier to noise ratio for marks of 0.36 μm in length is obtained using light at a wavelength of 690 nm and an objective lens of 0.6 numerical aperture. Diffraction analysis on the cross talk has shown that, in the scheme of land-groove recording, there is no optimum groove depth which can cancel the cross talk from adjacent tracks. © 1998 American Institute of Physics.
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42.30.Sy Pattern recognition
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
07.05.Pj Image processing

A single-mode high-power vertical cavity surface emitting laser

T. Milster, W. Jiang, E. Walker, D. Burak, P. Claisse, P. Kelly, and R. Binder

Appl. Phys. Lett. 72, 3425 (1998); http://dx.doi.org/10.1063/1.121654 (3 pages) | Cited 8 times

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We show how a structural element introduced into a vertical cavity surface emitting laser (VCSEL) results in the device operating in single stable high-order mode. The results from a 55 μm diameter device, λ = 772 nm, are presented. The stability of the mode structure is investigated as a function of injection current. A simple theory, based on a modal loss discrimination mechanism in VCSELs with slightly perturbed mirrors, is used to explain the preferred lasing mode in VCSEL structures using a central etched well. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers

Andrei Popov, Victor Sherstnev, Yury Yakovlev, Peter Werle, and Robert Mücke

Appl. Phys. Lett. 72, 3428 (1998); http://dx.doi.org/10.1063/1.121655 (3 pages) | Cited 2 times

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Relaxation oscillations have been investigated in A3B5 narrow band-gap semiconductor lasers. Based on wideband intensity noise measurements, the relaxation oscillation frequency has been observed up to 2 GHz for a 2 mW cw single-frequency InAsSb laser at a 3.4 μm wavelength. Laser parameters that influence the bandwidth, including the photon lifetime τp, the differential gain A and the spontaneous recombination lifetime τs were calculated from experimental data obtained at 95 K. We found τp in the range 0.7–1.9 ps, A was estimated to be (4.7–7.3)×10−6 cm−3 s−1 and τs = 2.5–6.9 ns. Relaxation oscillations occurred beyond the modulation bandwidth required for typical applications of antimonide lasers in spectroscopy. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Erbium doping of LiNbO3 by the ion exchange process

C. Sada, E. Borsella, F. Caccavale, F. Gonella, F. Segato, Yu. N. Korkishko, V. A. Fedorov, T. M. Morozova, G. Battaglin, and R. Polloni

Appl. Phys. Lett. 72, 3431 (1998); http://dx.doi.org/10.1063/1.121656 (3 pages) | Cited 10 times

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Erbium-doped LiNbO3 slides are fabricated by the ion exchange process. Compositional in-depth profiles of the species involved in the exchange are obtained by secondary ion mass spectrometry. Spectroscopic properties of Er3+ ions in the matrix are determined by photoluminescence spectroscopy. Structural and spectroscopic analyses suggest the formation of two different microstructures in the exchanged region. The potential of ion exchange for a controlled doping of LiNbO3 is outlined. © 1998 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.up Other materials
61.72.S- Impurities in crystals
78.55.Hx Other solid inorganic materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers

H. Q. Le, C. H. Lin, and S. S. Pei

Appl. Phys. Lett. 72, 3434 (1998); http://dx.doi.org/10.1063/1.121657 (3 pages) | Cited 23 times

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A 4 μm GaInSb/InAs type-II quantum well (QW) laser has shown a substantial improvement in internal loss and quantum efficiency, which has been a problem for this type of laser. It yielded 0.9–1.5 W peak, 90–150 mW average single-ended output for 0.1–1 ms pulses at 71 K, with a net power efficiency of ∼3.5%–4%. The power and efficiency are among the highest long-pulse results reported for any semiconductor laser of comparable wavelength. Comparison with similar QW lasers suggests that the improvement is a result of better material growth. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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